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Volume 31; Issue 5
Main
Russian Microelectronics
Volume 31; Issue 5
Russian Microelectronics
Volume 31; Issue 5
1
Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds
E. I. Cherepov
,
E. G. Tishkovskii
,
V. I. Obodnikov
,
Yu. N. Pal'yanov
,
A. G. Sokol
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 43 KB
Your tags:
english, 2002
2
Isotropic Plasma Etching of SiO2 Films
A. A. Kovalevskii
,
V. S. Malyshev
,
V. V. Tsybul'skii
,
V. M. Sorokin
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 89 KB
Your tags:
english, 2002
3
Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities
F. F. Komarov
,
A. F. Komarov
,
S. A. Petrov
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 39 KB
Your tags:
english, 2002
4
MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device
E. V. Chernyavskii
,
V. P. Popov
,
Yu. S. Pakhmutov
,
L. N. Safronov
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 414 KB
Your tags:
english, 2002
5
Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics
V. A. Goryachev
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 76 KB
Your tags:
english, 2002
6
Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and the Films
V. G. Erkov
,
S. F. Devyatova
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 60 KB
Your tags:
english, 2002
7
Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices
M. I. Gorlov
,
D. A. Litvinenko
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 147 KB
Your tags:
english, 2002
8
X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 –xZnxTe
E. M. Pashaev
,
V. N. Peregudov
,
S. N. Yakunin
,
A. A. Zaitsev
,
T. G. Kolesnikova
,
A. P. Korovin
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 49 KB
Your tags:
english, 2002
9
Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction
E. M. Pashaev
,
S. N. Yakunin
,
A. A. Zaitsev
,
V. G. Mokerov
,
Yu. V. Fedorov
,
R. M. Imamov
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 72 KB
Your tags:
english, 2002
10
Trench-Gate MOS-Controlled Thyristor: An Evaluation
E. V. Chernyavskii
,
V. P. Popov
,
Yu. S. Pakhmutov
,
L. N. Safronov
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 130 KB
Your tags:
english, 2002
11
Instability Conditions of the Stationary Nonconducting State for the Bispin
A. P. Lysenko
Journal:
Russian Microelectronics
Year:
2002
Language:
english
File:
PDF, 55 KB
Your tags:
english, 2002
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