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Volume 34; Issue 12
Main
Solid-State Electronics
Volume 34; Issue 12
Solid-State Electronics
Volume 34; Issue 12
1
Breakdown voltage of diffused epitaxial junctions
Constantin Bulucea
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 437 KB
Your tags:
english, 1991
2
Emitter injection and collector current ideality in abrupt heterojunction AlInAs/GaInAs HBTs
R.J. Ferro
,
R.G. Wilson
,
J.F. Jensen
,
D.B. Rensch
,
W.E. Stanchina
,
R.A. Metzger
,
M.W. Pierce
,
T.V. Kargodorian
,
Y.K. Allen
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 551 KB
Your tags:
english, 1991
3
The cut-off frequency of base-graded and junction-graded AlxGa1−xAs DHBTs
Oon-Sim Ang
,
D.L. Pulfrey
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 408 KB
Your tags:
english, 1991
4
A high-power short-pulse laser diode for waveguide second harmonic generation
Masahiro Kume
,
Hiroki Naito
,
Jun Ohya
,
Issey Ohta
,
Hirokazu Shimizu
,
Masaru Kazumura
,
Iwao Teramoto
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 366 KB
Your tags:
english, 1991
5
A deterministic particle method for the kinetic model of semiconductors: The homogeneous field model
P. Degond
,
F.J. Mustieles
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 714 KB
Your tags:
english, 1991
6
High-performance P-n-p heterojunction bipolar transistor design
J.S. Yuan
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 489 KB
Your tags:
english, 1991
7
Device-circuit mixed simulation of VDMOS charge transients
Enrico M.A. Ravanelli
,
Chenming Hu
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 621 KB
Your tags:
english, 1991
8
Analytical modelling of ultra-thin film depletion-mode SOI MOSFETs
F. Balestra
,
J. Brini
,
G. Ghibaudo
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 267 KB
Your tags:
english, 1991
9
Analysis of I–V measurements on PtSi-Si Schottky structures in a wide temperature range
D. Donoval
,
M. Barus
,
M. Zdimal
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 488 KB
Your tags:
english, 1991
10
Analysis of the trapping characteristics of silicon dioxide after Fowler-Nordheim degradation
C. Papadas
,
P. Morfouli
,
G. Ghibaudo
,
G. Pananakakis
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 387 KB
Your tags:
english, 1991
11
Parallel parasitic conductance in narrow-width MOSFETs
Z.P. Zuo
,
M.J. Deen
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 401 KB
Your tags:
english, 1991
12
Hot-carrier-induced photovoltage in silicon bipolar junction transistors
Sheng-Lyang Jang
,
Kuang-Lang Chern
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 484 KB
Your tags:
english, 1991
13
Two-dimensional analysis of high injection effects in AlGaAs/GaAs HBTs with semi-insulating external collectors
Kazushige Horio
,
Akira Oguchi
,
Hisayoshi Yanais
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 1.06 MB
Your tags:
english, 1991
14
Experimental study and modeling of band-to-band tunneling leakage current in thin-oxide MOSFETs
I. Nedev
,
A. Asenov
,
E. Stefanov
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 739 KB
Your tags:
english, 1991
15
GaAs surface plasma treatments for Schottky contacts
A. Paccagnella
,
A. Callegari
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 549 KB
Your tags:
english, 1991
16
Low-temperature degradation studies of AlGaAs/GaAs modulation-doped field effect transistors
Soon-won Kang
,
Joseph Ya-min Lee
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 354 KB
Your tags:
english, 1991
17
A self-consistent analytic threshold voltage model for thin SOI n-channel MOSFETs
Jin-Ho Choi
,
Ho-Jun Song
,
Kang-Deog Suh
,
Jae-Woo Park
,
Choong-Ki Kim
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 348 KB
Your tags:
english, 1991
18
GaAs MESFETs with channel-doping variations
Z. Abid
,
A. Gopinath
,
B. Meskoob
,
S. Prasad
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 395 KB
Your tags:
english, 1991
19
Closed-form analytical solutions for avalanche breakdown quantities in high-voltage diffused junctions
Su-Jun Liang
,
Jin-Sheng Luo
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 296 KB
Your tags:
english, 1991
20
1/f noise in amorphous silicon and hydrogenated amorphous silicon thin films
M. Baciocchi
,
A. D'Amico
,
C.M. Van Vliet
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 604 KB
Your tags:
english, 1991
21
Effect of oxide resistance on the characterization of interface trap density in MOS structures
Jing-Jenn Lin
,
Jenn-Gwo Hwu
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 451 KB
Your tags:
english, 1991
22
A modified conductance technique for the determination of series resistance of MIS tunnel diodes
P. Chattopadhyay
,
B. Raychaudhuri
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 149 KB
Your tags:
english, 1991
23
A new resonant-tunneling bipolar transistor with triple-well emitter structure
Wen-Chao Liu
,
Yeong-Shyang Lee
,
Der-Feng Guo
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 425 KB
Your tags:
english, 1991
24
Effects of using minority hole mobility in n+ emitter on bipolar device modeling
J.S. Yuan
,
C.S. Yeh
,
B. Gadepally
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 259 KB
Your tags:
english, 1991
25
Study of electrical properties of SiO2 grown over plasma-cleaned silicon surfaces
R.K. Chanana
,
R. Dwivedi
,
S.K. Srivastava
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 190 KB
Your tags:
english, 1991
26
Application of quantum mechanical wave impedance in the solution of Schrodinger's equation in quantum wells
S.M. Fazlul Kabir
,
M.R. Khan
,
M.A. Alam
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 181 KB
Your tags:
english, 1991
27
On the recombination in the quasi-neutral base of polysilicon emitter transistors with interfacial oxides
Rutger C. Wijburg
,
Frederik W. Ragay
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 214 KB
Your tags:
english, 1991
28
Comments on “An improved model of ‘generation width’ for pulsed MOS C-t transient analysis”
P.U. Calzolari
,
S. Graffi
,
A.M. Mazzone
,
C. Morandi
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 37 KB
Your tags:
english, 1991
29
Reply to “Comments on ‘An improved model of “generation width” for pulsed MOS C-t transient analysis‘”
Xiumiao Zhang
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 37 KB
Your tags:
english, 1991
30
Editorial: Software survey section
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 109 KB
Your tags:
english, 1991
31
List of contents and author index
Journal:
Solid-State Electronics
Year:
1991
Language:
english
File:
PDF, 1.22 MB
Your tags:
english, 1991
1
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