Volume 36; Issue 2

IEEE Electron Device Letters

Volume 36; Issue 2

1

Highly Integrable Organic Optocouplers on a Patterned Double-Side Indium Tin Oxide Substrate With High Isolation Voltage

Li, Dong, Li, Wenhai, Duan, Lian, Zhang, Guohui, Liu, Song, Dong, Guifang

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 412 KB

english, 2015

2

Theoretical and Experimental Investigations on the Quasi-Optical Mode Converter for a Pulsed Terahertz Gyrotron

Liu, Diwei, Wang, Wei, Zhuang, Qianmeng, Yan, Yang

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 457 KB

english, 2015

3

High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts

Jatal, Wael, Baumann, Uwe, Tonisch, Katja, Schwierz, Frank, Pezoldt, Jorg

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 253 KB

english, 2015

4

Electret-Free Micromachined Silicon Electrostatic Vibration Energy Harvester With the Bennet’s Doubler as Conditioning Circuit

Dorzhiev, Vitaly, Karami, Armine, Basset, Philippe, Marty, Frederic, Dragunov, Valery, Galayko, Dimitri

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 542 KB

english, 2015

5

High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI

Quemerais, Thomas, Gloria, Daniel, Golanski, Dominique, Bouvot, Simon

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 907 KB

english, 2015

6

Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost

Koricic, Marko, Zilak, Josip, Suligoj, Tomislav

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.40 MB

english, 2015

7

A Novel Technique to Alleviate the Stiction Phenomenon in Radio Frequency Microelectromechanical Switches

Barbato, Marco, Meneghesso, Gaudenzio

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 733 KB

english, 2015

8

Characteristics of a Novel Poly-Si P-Channel Junctionless Thin-Film Transistor With Hybrid P/N-Substrate

Cheng, Ya-Chi, Chen, Hung-Bin, Su, Jun-Ji, Shao, Chi-Shen, Thirunavukkarasu, Vasanthan, Chang, Chun-Yen, Wu, Yung-Chun

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 2.27 MB

english, 2015

9

Negative Gate Transconductance in Gate/Source Overlapped Heterojunction Tunnel FET and Application to Single Transistor Phase Encoder

Trivedi, Amit Ranjan, Ahmed, Khondker Zakir, Mukhopadhyay, Saibal

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 6.18 MB

english, 2015

10

Characterizing the Electrical Properties of a Novel Junctionless Poly-Si Ultrathin-Body Field-Effect Transistor Using a Trench Structure

Yeh, Mu-Shih, Wu, Yung-Chun, Wu, Min-Hsin, Chung, Ming-Hsien, Jhan, Yi-Ruei, Hung, Min-Feng

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.47 MB

english, 2015

11

Feasibility Study of Semifloating Gate Transistor Gamma-Ray Dosimeter

Wang, Ying, Xiang, Zhi-Qiang, Hu, Hai-Fan, Cao, Fei

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 739 KB

english, 2015

12

High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs

Chen, Yuanfeng, Geng, Di, Mativenga, Mallory, Nam, Hyoungsik, Jang, Jin

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 513 KB

english, 2015

13

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation

Xu, Xiaoxin, Lv, Hangbing, Liu, Hongtao, Gong, Tiancheng, Wang, Guoming, Zhang, Meiyun, Li, Yang, Liu, Qi, Long, Shibing, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.04 MB

english, 2015

14

Impact of Sidewall Passivation and Channel Composition on InxGa1-xAs FinFET Performance

Thathachary, Arun V., Lavallee, Guy, Cantoro, Mirco, Bhuwalka, Krishna K., Heo, Yeon-Cheol, Maeda, Shigenobu, Datta, Suman

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 631 KB

english, 2015

15

Energy-Efficient Artificial Synapses Based on Flexible IGZO Electric-Double-Layer Transistors

Zhou, Jumei, Liu, Ning, Zhu, Liqiang, Shi, Yi, Wan, Qing

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 446 KB

english, 2015

16

Electrochromic Device Integrated With GaInP/GaAs/Ge Triple-Junction Solar Cell

Hou, Jei-Li, Wu, Chih-Hung, Chang, Shoou-Jinn

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 599 KB

english, 2015

17

Photochemically Activated Flexible Metal-Oxide Transistors and Circuits Using Low Impurity Aqueous System

Heo, Jae-Sang, Kim, Jae-Hyun, Kim, Jaekyun, Kim, Myung-Gil, Kim, Yong-Hoon, Park, Sung Kyu

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 517 KB

english, 2015

18

4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity Recovery

Okojie, Robert S., Lukco, Dorothy, Nguyen, Vu, Savrun, Ender

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 466 KB

english, 2015

19

An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs

Deng, Wanling, Huang, Junkai, Ma, Xiaoyu, Liou, Juin J.

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 820 KB

english, 2015

20

Electrothermal Mapping of AlGaN/GaN HEMTs Using Microresistance Thermometer Detectors

Arenas, Osvaldo, Al Alam, Elias, Aimez, Vincent, Jaouad, Abdelatif, Maher, Hassan, Ares, Richard, Boone, Francois

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 972 KB

english, 2015

21

Mobility and Capacitance Comparison in Scaled InGaAs Versus Si Trigate MOSFETs

Marin, Enrique G., Ruiz, Francisco G., Godoy, Andres, Tienda-Luna, Isabel M., Gamiz, Francisco

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 869 KB

english, 2015

22

Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 949 KB

english, 2015

23

First Detection of Single-Electron Charging of the Floating Gate of NAND Flash Memory Cells

Monzio Compagnoni, Christian, Paolucci, Giovanni M., Miccoli, Carmine, Spinelli, Alessandro S., Lacaita, Andrea L., Visconti, Angelo, Goda, Akira

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 438 KB

english, 2015

24

Nanoscale Mo Ohmic Contacts to III–V Fins

Vardi, Alon, Lu, Wenjie, Zhao, Xin, del Alamo, Jesus A.

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 633 KB

english, 2015

25

Widely Tunable Variable Capacitor With Switching and Latching Mechanisms

Baek, Dae-Hyun, Eun, Youngkee, Kwon, Dae-Sung, Kim, Min-Ook, Chung, Taeyoung, Kim, Jongbaeg

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 2.57 MB

english, 2015

26

Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor

Jhan, Yi-Ruei, Wu, Yung-Chun, Wang, Yu-Long, Lee, Yao-Jen, Hung, Min-Feng, Lin, Hsin-Yi, Chen, Yu-Hsiang, Yeh, Mu-Shih

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.87 MB

english, 2015

27

High Performance of Self-Aligned Transparent Polysilicon-Gate Thin-Film Transistors by NiSi2 Seed-Induced Lateral Crystallization

Park, Jae Hyo, Joo, Seung Ki

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 439 KB

english, 2015

28

Si-Based MOSFET and Thin Film Transistor Prepared via Hot Wire Implantation Doping Technique

Chen, Yi-Hao, Chang, Shoou-Jinn, Hsueh, Ting-Jen

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 856 KB

english, 2015

29

Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1-xAs FinFET

Agrawal, Nidhi, Thathachary, Arun V., Mahapatra, Souvik, Datta, Suman

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.31 MB

english, 2015

30

Highly Sensitive Pressure Sensor Array With Photothermally Reduced Graphene Oxide

Kazemzadeh, Rouzbeh, Andersen, Kimball, Motha, Lazarus, Kim, Woo Soo

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 639 KB

english, 2015

31

Simulation of Laterally Coupled InGaZnO4-Based Electric-Double-Layer Transistors for Synaptic Electronics

Wan, Xiang, Feng, Ping, Dong Wu, Guo, Shi, Yi, Wan, Qing

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 557 KB

english, 2015

32

Tuning In-Plane Fixed-Fixed Beam Resonators With Embedded Heater in CMOS Technology

Goktas, Hasan, Zaghloul, Mona E.

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.34 MB

english, 2015

33

A Low-Voltage CMOS-Microelectromechanical Systems Thermal-Piezoresistive Resonator With $Q > 10\,000$

Li, Cheng-Syun, Li, Ming-Huang, Chen, Cheng-Chi, Chin, Chi-Hang, Li, Sheng-Shian

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.26 MB

english, 2015

34

A Novel Trench-Gated Power MOSFET With Reduced Gate Charge

Wang, Ying, Liu, Yan-Juan, Yu, Cheng-Hao, Cao, Fei

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 653 KB

english, 2015

35

Dual-Sweep Combinational Transconductance Technique for Separate Extraction of Parasitic Resistances in Amorphous Thin-Film Transistors

Jun, Sungwoo, Bae, Hagyoul, Kim, Hyeongjung, Lee, Jungmin, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.04 MB

english, 2015

36

Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching Memory

Chung, Yueh-Ting, Su, Po-Cheng, Cheng, Yu-Hsuan, Wang, Tahui, Chen, Min-Cheng, Lu, Chih-Yuan

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.22 MB

english, 2015

37

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 164 KB

english, 2015

38

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 166 KB

english, 2015

39

Solid-State Image Sensors

Journal:

IEEE Electron Device Letters

Year:

2015

File:

PDF, 291 KB

2015

40

Blank page

Journal:

IEEE Electron Device Letters

Year:

2015

File:

PDF, 5 KB

2015

41

IEEE Electron Device Letters publication information

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 146 KB

english, 2015

42

Significant Reduction of Dynamic Negative Bias Stress-Induced Degradation in Bridged-Grain Poly-Si TFTs

Zhang, Meng, Xia, Zhihe, Zhou, Wei, Chen, Rongsheng, Wong, Man

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1017 KB

english, 2015

43

EDS Meetings Calendar

Journal:

IEEE Electron Device Letters

Year:

2015

File:

PDF, 1.12 MB

2015

44

Conductance Along the Interface Formed by 400 °C Pure Boron Deposition on Silicon

Qi, Lin, Nanver, Lis K.

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 597 KB

english, 2015

45

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 117 KB

english, 2015

46

$1/f$ Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime

He, Hongyu, Zheng, Xueren, Zhang, Shengdong

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 515 KB

english, 2015