IEEE Transactions on Device and Materials Reliability

1

Dummy Read Scheme for Lifetime Improvement of MLC NAND Flash Memories

Wu, Dai Yan, Chen, Shuai Fan, Lin, Chrong-Jung, King, Ya-Chin

Journal:

Year:

2016

Language:

english

File:

PDF, 929 KB

english, 2016

2

Suppression of Dislocation-Induced Drain Leakage Current in Power VD MOSFET Structures

Galle, Jaromir

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 786 KB

english, 2016

3

Using Ge-Doped La-Oxynitride as Interfacial Passivation Layer for GaAs Metal-Oxide-Semiconductor Capacitors

Lu, Han-Han, Xu, Jing-Ping, Liu, Lu

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 648 KB

english, 2016

4

Suppression of Row Hammer Effect by Doping Profile Modification in Saddle-Fin Array Devices for Sub-30-nm DRAM Technology

Yang, Chia-Ming, Wei, Chen-Kang, Chang, Yu Jing, Wu, Tieh-Chiang, Chen, Hsiu-Pin, Lai, Chao-Sung

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 381 KB

english, 2016

5

3-D Integration and ESD Protection: Design and Analysis

Mitra, Souvick, Gebreselasie, Ephrem, Li, You, Gauthier, Robert, Tran-Quinn, Thuy, Ramachandran, Koushik

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 1.96 MB

english, 2016

6

An Approach for Assessing the Long-Term Reliability of Lead-Free Electronics Under In-Field Conditions

Al-Momani, Emad S., Khasawneh, Mohammad T., Sammakia, Bahgat

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 1.04 MB

english, 2016

7

Process Innovations to Prevent Glass Substrate Fracture From RDL Stress and Singulation Defects

McCann, Scott, Singh, Bhupender, Smet, Vanessa, Sundaram, Venkatesh, Tummala, Rao R., Sitaraman, Suresh K.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 1.82 MB

english, 2016

8

The Lucky Electron Model for TDDB in Low-k Dielectrics

Lloyd, J. R.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 148 KB

english, 2016

9

Stress Evolution During Nanoindentation in Open TSVs

Papaleo, Santo, Zisser, Wolfhard H., Singulani, Anderson P., Ceric, Hajdin, Selberherr, Siegfried

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 671 KB

english, 2016

10

2016 IndexIEEE Transactions on Device and Materials ReliabilityVol. 16

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 175 KB

english, 2016

11

2017 EDTM Sponsorship Package

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

File:

PDF, 1.02 MB

2016

12

Effect of Manufacturing Process on Micro-Deformation Behavior of Sintered-Silver Die-Attach Material

Suzuki, Tomohisa, Terasaki, Takeshi, Kawana, Yuki, Ishikawa, Dai, Nishimura, Masato, Nakako, Hideo, Kurafuchi, Kazuhiko

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 2.08 MB

english, 2016

13

Editorial Kudos to Our Reviewers

Oates, Anthony S.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 62 KB

english, 2016

14

2017 1st Electron Devices Technology and Manufacturing Conference

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

File:

PDF, 1.44 MB

2016

15

Blank page

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

File:

PDF, 3 KB

2016

16

Front Cover

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

File:

PDF, 441 KB

2016

17