Volume 55; Issue 11

IEEE Transactions on Electron Devices

Volume 55; Issue 11

1

Semiconducting Nanowire Field-Effect Transistor Biomolecular Sensors

Stern, E., Vacic, A., Reed, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.20 MB

english, 2008

2

Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

Banno, N., Sakamoto, T., Iguchi, N., Sunamura, H., Terabe, K., Hasegawa, T., Aono, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 827 KB

english, 2008

3

Germanium Antimonide Phase-Change Nanowires for Memory Applications

Xuhui Sun, Bin Yu, Ng, G., Meyyappan, M., Sanghyun Ju, Janes, D.B.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 629 KB

english, 2008

4

Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method

Horita, S., Trinh, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 722 KB

english, 2008

5

Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs

Hirao, T., Furuta, M., Hiramatsu, T., Matsuda, T., Chaoyang Li, Furuta, H., Hokari, H., Yoshida, M., Ishii, H., Kakegawa, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.08 MB

english, 2008

6

Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale nand Flash Memories

Compagnoni, C.M., Gusmeroli, R., Spinelli, A.S., Visconti, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 272 KB

english, 2008

7

Investigation of Metallized Source/Drain Extension for High-Performance Strained NMOSFETs

Tzu-Juei Wang, Chih-Hsin Ko, Hong-Nien Lin, Shoou-Jinn Chang, San-Lein Wu, Ta-Ming Kuan, Wen-Chin Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 365 KB

english, 2008

8

Analytical Model and Current Gain Enhancement of Polysilicon-Emitter Contact Bipolar Transistors

Zouari, A., Ben Arab, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 483 KB

english, 2008

9

Analytical Design Algorithm of Planar Inductor Layout in CMOS Technology

Heng-Ming Hsu, Kai-Yuen Chan, Hung-Chi Chien, Han-Chien Kuan

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 673 KB

english, 2008

10

Wall Charges and Transition Voltage of Microplasma Modes in Plasma Devices With an Auxiliary Electrode

Jeong Hun Mun, Seung Hun Kim, Kyung Cheol Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.04 MB

english, 2008

11

An Application-Driven Improvement of the Drift–Diffusion Model for Carrier Transport in Decanano-Scaled CMOS Devices

Kampen, C., Burenkov, A., Lorenz, J., Ryssel, H., Aubry-Fortuna, V., Bournel, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.64 MB

english, 2008

12

A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFET

Shrivastava, M., Baghini, M.S., Sachid, A.B., Sharma, D.K., Rao, V.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 550 KB

english, 2008

13

Compact Modeling of Junction Current in Dynamically Depleted SOI MOSFETs

Weimin Wu, Wei Yao, Gildenblat, G., Scholten, A.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 441 KB

english, 2008

14

Theory of Breakdown Position Determination by Voltage- and Current-Ratio Methods

Alam, M.A., Varghese, D., Kaczer, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.12 MB

english, 2008

15

A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

Saxena, R.S., Kumar, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 468 KB

english, 2008

16

High-Performance BOI FinFETs Based on Bulk-Silicon Substrate

Xiaoyan Xu, Runsheng Wang, Ru Huang, Jing Zhuge, Gang Chen, Xing Zhang, Yangyuan Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 405 KB

english, 2008

17

Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering

Alexander, C., Roy, G., Asenov, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.16 MB

english, 2008

18

A Study of On-Chip Stacked Multiloop Spiral Inductors

Kai Yang, Wen-Yan Yin, Jinglin Shi, Kai Kang, Jun-Fa Mao, Zhang, Y.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 924 KB

english, 2008

19

Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs

Irisawa, T., Numata, T., Toyoda, E., Hirashita, N., Tezuka, T., Sugiyama, N., Takagi, S.-i.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 319 KB

english, 2008

20

MOSFET Degradation Under RF Stress

Sasse, G.T., Kuper, F.G., Schmitz, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 235 KB

english, 2008

21

Device Characteristics of AlGaN/GaN MOS-HEMTs Using High- Praseodymium Oxide Layer

Hsien-Chin Chiu, Chih-Wei Yang, Yung-Hsiang Lin, Ray-Ming Lin, Liann-Be Chang, Kuo-Yang Horng

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 446 KB

english, 2008

22

Characterization of Fast Relaxation During BTI Stress in Conventional and Advanced CMOS Devices With Gate Stacks

Kerber, A., Maitra, K., Majumdar, A., Hargrove, M., Carter, R.J., Cartier, E.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.20 MB

english, 2008

23

On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple -Doped Sheets

Li-Yang Chen, Shiou-Ying Cheng, Tzu-Pin Chen, Kuei-Yi Chu, Tsung-Han Tsai, Yi-Chun Liu, Xin-Da Liao, Wen-Chau Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 191 KB

english, 2008

24

Thermal Issues in Micromachined Spiral Inductors for High-Power Applications

Huseyin Sagkol, Rejaei, B., Burghartz, J.N.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 430 KB

english, 2008

25

Electrical Characteristics and Thermal Stability of Metal Gate Electrode for Advanced MOS Devices

Chang-Ta Yang, Kuei-Shu Chang-Liao, Hsin-Chun Chang, Chung-Hao Fu, Tien-Ko Wang, Wen-Fa Tsai, Chi-Fong Ai, Wen-Fa Wu

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 469 KB

english, 2008

26

New Developments in Charge Pumping Measurements on Thin Stacked Dielectrics

Toledano-Luque, M., Degraeve, R., Zahid, M.B., Pantisano, L., San Andres, E., Groeseneken, G., De Gendt, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 522 KB

english, 2008

27

Accurate Systematic Model-Parameter Extraction for On-Chip Spiral Inductors

Hao-Hui Chen, Huai-Wen Zhang, Shyh-Jong Chung, Jen-Tsai Kuo, Tzung-Chi Wu

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 335 KB

english, 2008

28

UV Illumination Technique for Leakage Current Reduction in a-Si:H Thin-Film Transistors

Yiming Li, Chih-Hong Hwang, Chung-Le Chen, Shuoting Yan, Jen-Chung Lou

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 543 KB

english, 2008

29

Development of a Vertical Wrap-Gated InAs FET

Thelander, C., Rehnstedt, C., Froberg, L.E., Lind, E., Martensson, T., Caroff, P., Lowgren, T., Ohlsson, B.J., Samuelson, L., Wernersson, L.-E.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 730 KB

english, 2008

30

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

Runsheng Wang, Hongwei Liu, Ru Huang, Jing Zhuge, Liangliang Zhang, Dong-Won Kim, Xing Zhang, Donggun Park, Yangyuan Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 779 KB

english, 2008

31

Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors

Tsung-Yang Liow, Kian-Ming Tan, Rinus Lee, Ming Zhu, Ben Lian-Huat Tan, Balasubramanian, N., Yee-Chia Yeo

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 525 KB

english, 2008

32

Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications

Singh, N., Buddharaju, K.D., Manhas, S.K., Agarwal, A., Rustagi, S.C., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.45 MB

english, 2008

33

Electrical Properties of Surface-Tailored ZnO Nanowire Field-Effect Transistors

Woong-Ki Hong, Gunho Jo, Soon-Shin Kwon, Sunghoon Song, Takhee Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.10 MB

english, 2008

34

Modeling and Fabrication of ZnO Nanowire Transistors

Pearton, S.J., Norton, D.P., Li-Chia Tien, Jing Guo

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 695 KB

english, 2008

35

Nanowire Transistor Performance Limits and Applications

Wei Lu, Ping Xie, Lieber, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.27 MB

english, 2008

36

Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations

Hsing-Hui Hsu, Ta-Wei Liu, Leng Chan, Chuan-Ding Lin, Tiao-Yuan Huang, Horng-Chih Lin

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.47 MB

english, 2008

37

Scaling of Nanowire Transistors

Bo Yu, Lingquan Wang, Yu Yuan, Asbeck, P.M., Yuan Taur

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 619 KB

english, 2008

38

Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

Poli, S., Pala, M.G., Poiroux, T., Deleonibus, S., Baccarani, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 851 KB

english, 2008

39

ZnO Nanowire and Nanotube Electronics

Unalan, H.E., Yang Yang, Yan Zhang, Hiralal, P., Kuo, D., Dalal, S., Butler, T., Seung Nam Cha, Jae Eun Jang, Chremmou, K., Lentaris, G., Di Wei, Rosentsveig, R., Suzuki, K., Matsumoto, H., Minagawa,

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.31 MB

english, 2008

40

What Do We Certainly Know About Noise in MOSTs?

Vandamme, L.K.J., Hooge, F.N.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 560 KB

english, 2008

41

Some Considerations on Nanowires in Nanoelectronics

Ferry, D.K., Gilbert, M.J., Akis, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 334 KB

english, 2008

42

Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation

Seonghoon Jin, Fischetti, M.V., Ting-wei Tang

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.04 MB

english, 2008

43

Performance of -Type InSb and InAs Nanowire Field-Effect Transistors

Khayer, M.A., Lake, R.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 306 KB

english, 2008

44

The Nanoscale Silicon Accumulation-Mode MOSFET—A Comprehensive Numerical Study

Iqbal, M.M.-H., Yi Hong, Garg, P., Udrea, F., Migliorato, P., Fonash, S.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.26 MB

english, 2008

45

Charge Transport Characteristics in Boron-Doped Silicon Nanowires

Ingole, S., Manandhar, P., Chikkannanavar, S.B., Akhadov, E.A., Picraux, S.T.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 611 KB

english, 2008

46

Integration of Self-Assembled Metal-Catalyzed Semiconductor Nanowires for Sensors and Large-Area Electronics

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 814 KB

english, 2008

47

Quasi-Ballistic Transport in Nanowire Field-Effect Transistors

Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.32 MB

english, 2008

48

Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates

Rehnstedt, C., Martensson, T., Thelander, C., Samuelson, L., Wernersson, L.-E.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 465 KB

english, 2008

49

Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

Li, F.M., Hsieh, G.-W., Dalal, S., Newton, M.C., Stott, J.E., Hiralal, P., Nathan, A., Warburton, P.A., Unalan, H.E., Beecher, P., Flewitt, A.J., Robinson, I., Amaratunga, G., Milne, W.I.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.07 MB

english, 2008

50

ZnO Nanowire Field-Effect Transistors

Pai-Chun Chang, Jia Grace Lu

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 999 KB

english, 2008

51

Nanowire Thin-Film Transistors: A New Avenue to High-Performance Macroelectronics

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 570 KB

english, 2008

52

A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design

Jie Yang, Jin He, Feng Liu, Lining Zhang, Feilong Liu, Xing Zhang, Mansun Chan

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.11 MB

english, 2008

53

Metrology for the Electrical Characterization of Semiconductor Nanowires

Richter, C. A., Xiong, H. D., Zhu, X., Wang, W., Stanford, V. M., Hong, W.-K., Lee, T., Ioannou, D. E., Li, Q.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 741 KB

english, 2008

54

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 70 KB

english, 2008

55

Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

Kumar, M.J., Reed, M.A., Amaratunga, G., Cohen, G.M., Janes, D.B., Lieber, C.M., Meyyappan, M., Wernersson, L.-E., Wang, K.L., Chau, R.S., Kamins, T.I., Lundstrom, M., Bin Yu, Chongwu Zhou

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 334 KB

english, 2008

56

An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure

Lining Zhang, Jin He, Jian Zhang, Feng Liu, Yue Fu, Yan Song, Xing Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.29 MB

english, 2008

57

[Front cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 292 KB

2008

58

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 39 KB

english, 2008

59

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 47 KB

english, 2008

60

Special issue of IEEE Transactions on Electron Devices

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 565 KB

2008

61

Compact Modeling of Ballistic Nanowire MOSFETs

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 361 KB

english, 2008

62

Toward Nanowire Electronics

Appenzeller, J., Knoch, J., Bjork, M.T., Riel, H., Schmid, H., Riess, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.74 MB

english, 2008

63

Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations—A Comparison With Multigate MOSFETs

Yu-Sheng Wu, Pin Su

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 604 KB

english, 2008

64

2009 34th IEEE Photovoltaic Specialists Conference (PVSC)

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 364 KB

2008

65

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 5 KB

2008