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1

Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate

Even, A., Laval, G., Ledoux, O., Ferret, P., Sotta, D., Guiot, E., Levy, F., Robin, I. C., Dussaigne, A.

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1015 KB

english, 2017

2

Dynamics of AlGaN based detectors in the deep-UV

G. Mazzeo, J.-L. Reverchon, G. Conte, A. Dussaigne, J.-Y. Duboz

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 526 KB

english, 2008

3

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Brochen, Stéphane, Brault, Julien, Chenot, Sébastien, Dussaigne, Amélie, Leroux, Mathieu, Damilano, Benjamin

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.17 MB

english, 2013

4

AlGaN-Based Linear Array for UV Solar-Blind Imaging From 240 to 280 nm

Mazzeo, G., Reverchon, J.-L., Duboz, J.-Y., Dussaigne, A.

Journal:

IEEE Sensors Journal

Year:

2006

Language:

english

File:

PDF, 320 KB

english, 2006

5

Deep ultraviolet detection dynamics of AlGaN based devices

G. Mazzeo, G. Conte, J. Reverchon, A. Dussaigne, J. Duboz

Year:

2006

Language:

english

File:

PDF, 362 KB

english, 2006

6

Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice

Dussaigne, A., Barbier, F., Samuel, B., Even, A., Templier, R., Lévy, F., Ledoux, O., Rozhavskaia, M., Sotta, D.

Journal:

Journal of Crystal Growth

Year:

2020

Language:

english

File:

PDF, 1.75 MB

english, 2020

7

Injection Dependence of the Electroluminescence Spectra of Phosphor Free GaN-Based White Light Emitting Diodes

S. Dalmasso, B. Damilano, C. Pernot, A. Dussaigne, D. Byrne, N. Grandjean, M. Leroux, J. Massies

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 165 KB

english, 2002

8

Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, N. Grandjean

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 277 KB

english, 2004

9

GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

A. Dussaigne, M. Malinverni, D. Martin, A. Castiglia, N. Grandjean

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 277 KB

english, 2009

10

About some optical properties of AlxGa1−xN /GaN quantum wells grown by molecular beam epitaxy

M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le Louarn, S. Vézian, J. Massies

Journal:

Superlattices and Microstructures

Year:

2004

Language:

english

File:

PDF, 344 KB

english, 2004

11

Control of the polarity of GaN films using an Mg adsorption layer

N. Grandjean, A. Dussaigne, S. Pezzagna, P. Vennéguès

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 825 KB

english, 2003

12

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Taliercio, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies

Journal:

physica status solidi (b)

Year:

2004

Language:

english

File:

PDF, 822 KB

english, 2004

13

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

G. R. Mutta, P. Ruterana, J. L. Doualan, M. P. Chauvat, F. Ivaldi, S. Kret, N. A. K. Kaufmann, A. Dussaigne, D. Martin, N. Grandjean

Journal:

physica status solidi (b)

Year:

2011

Language:

english

File:

PDF, 309 KB

english, 2011

14

Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, J. Massies

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 283 KB

english, 2003

15

Radiative lifetime in wurtzite GaN/AlN quantum dots

R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 286 KB

english, 2007

16

Monolithic white light emitting diodes with a broad emission spectrum

A. Dussaigne, J. Brault, B. Damilano, J. Massies

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 125 KB

english, 2007

17

Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots

F. Demangeot, D. Simeonov, A. Dussaigne, R. Butté, N. Grandjean

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 201 KB

english, 2009

18

In surface segregation in InGaN/GaN quantum wells

A. Dussaigne, B. Damilano, N. Grandjean, J. Massies

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 197 KB

english, 2003

19

Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation

Bretagnon, T., Kalliakos, S., Lefebvre, P., Valvin, P., Gil, B., Grandjean, N., Dussaigne, A., Damilano, B., Massies, J.

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 56 KB

english, 2003

20

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Simeonov, D., Dussaigne, A., Butté, R., Grandjean, N.

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 176 KB

english, 2008

21

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Corfdir, P., Dussaigne, A., Teisseyre, H., Suski, T., Grzegory, I., Lefebvre, P., Giraud, E., GanieÌre, J.-D., Grandjean, N., Deveaud-PleÌdran, B.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.71 MB

english, 2012

22

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

Kaufmann, Nils A K, Dussaigne, Amélie, Martin, Denis, Valvin, Pierre, Guillet, Thierry, Gil, Bernard, Ivaldi, Francesco, Kret, Slawomir, Grandjean, Nicolas

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.33 MB

english, 2012

23

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells

Dussaigne, A, Corfdir, P, Levrat, J, Zhu, T, Martin, D, Lefebvre, P, Ganière, J-D, Butté, R, Deveaud-Plédran, B, Grandjean, N, Arroyo, Y, Stadelmann, P

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 1.34 MB

english, 2011

24

Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7âÎ¼m

Sakr, S., Giraud, E., Dussaigne, A., Tchernycheva, M., Grandjean, N., Julien, F. H.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 840 KB

english, 2012

25

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

Damien Salomon, Amelie Dussaigne, Matthieu Lafossas…

Journal:

Nanoscale Research Letters

Year:

2013

Language:

english

File:

PDF, 877 KB

english, 2013

26

Direct Imaging of p–n Junction in Core–Shell GaN Wires

Tchoulfian, P., Donatini, F., Levy, F., Dussaigne, A., Ferret, P., Pernot, J.

Journal:

Year:

2014

Language:

english

File:

PDF, 2.71 MB

english, 2014

27

Nonpolar GaN-based microcavity using AlN∕GaN distributed Bragg reflector

Zhu, T., Dussaigne, A., Christmann, G., Pinquier, C., Feltin, E., Martin, D., Butté, R., Grandjean, N.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 421 KB

english, 2008

28

quantum dots

Bretagnon, T., Lefebvre, P., Valvin, P., Bardoux, R., Guillet, T., Taliercio, T., Gil, B., Grandjean, N., Semond, F., Damilano, B., Dussaigne, A., Massies, J.

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 138 KB

english, 2006

29

Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

Kalliakos, S., Bretagnon, T., Lefebvre, P., Taliercio, T., Gil, B., Grandjean, N., Damilano, B., Dussaigne, A., Massies, J.

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 274 KB

english, 2004

30

Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

Tchoulfian, P., Donatini, F., Levy, F., Amstatt, B., Dussaigne, A., Ferret, P., Bustarret, E., Pernot, J.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 959 KB

english, 2013

31

-plane GaN/AlGaN quantum wells

Rossbach, G., Levrat, J., Dussaigne, A., Cosendey, G., Glauser, M., Cobet, M., Butté, R., Grandjean, N., Teisseyre, H., Bockowski, M., Grzegory, I., Suski, T.

Journal:

Physical Review B

Year:

2011

Language:

english

File:

PDF, 1.53 MB

english, 2011

32

Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

Corfdir, P., Levrat, J., Dussaigne, A., Lefebvre, P., Teisseyre, H., Grzegory, I., Suski, T., Ganière, J.-D., Grandjean, N., Deveaud-Plédran, B.

Journal:

Physical Review B

Year:

2011

Language:

english

File:

PDF, 690 KB

english, 2011

33

Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103, 032102 (2013)]

Brochen, Stéphane, Brault, Julien, Chenot, Sébastien, Dussaigne, Amélie, Leroux, Mathieu, Damilano, Benjamin

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 607 KB

english, 2013

34

Nonlinear emission properties of an optically anisotropic GaN-based microcavity

Levrat, Jacques, Rossbach, Georg, Dussaigne, Amélie, Cosendey, Gatien, Glauser, Marlene, Cobet, Munise, Butté, Raphaël, Grandjean, Nicolas, Teisseyre, Henryk, Boćkowski, Michał, Grzegory, Izabella, Su

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 2.96 MB

english, 2012

35

[IEEE International Conference on Molecular Bean Epitaxy - San Francisco, CA, USA (15-20 Sept. 2002)] International Conference on Molecular Bean Epitaxy - Control of the polarity of GaN epilayers using a Mg adsorption layer

Grandjean, N., Talent, M.-L., Dussaigne, A., Vennegues, P., Tournie, E.

Year:

2002

Language:

english

File:

PDF, 134 KB

english, 2002

36

High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy

Natali, F., Byrne, D., Dussaigne, A., Grandjean, N., Massies, J., Damilano, B.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 328 KB

english, 2003

37

Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

Corfdir, P., Lefebvre, P., Balet, L., Sonderegger, S., Dussaigne, A., Zhu, T., Martin, D., Ganière, J.-D., Grandjean, N., Deveaud-Plédran, B.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 922 KB

english, 2010

38

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Corfdir, P., Lefebvre, P., Levrat, J., Dussaigne, A., Ganière, J.-D., Martin, D, Ristić, J., Zhu, T., Grandjean, N., Deveaud-Plédran, B.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 824 KB

english, 2009

39

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Teisseyre, H., Kamińska, A., Franssen, G., Dussaigne, A., Grandjean, N., Grzegory, I., Łucznik, B., Suski, T.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 733 KB

english, 2009

40

[IEEE International Conference on Molecular Bean Epitaxy - San Francisco, CA, USA (15-20 Sept. 2002)] International Conference on Molecular Bean Epitaxy - Indium surface segregation in InGaN/GaN quantum wells

Dussaigne, A., Damilano, B., Grandjean, N., Massies, J.

Year:

2002

Language:

english

File:

PDF, 77 KB

english, 2002

41

High doping level in Mg-doped GaN layers grown at low temperature

Dussaigne, A., Damilano, B., Brault, J., Massies, J., Feltin, E., Grandjean, N.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 613 KB

english, 2008

42

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Corfdir, P., Ristić, J., Lefebvre, P., Zhu, T., Martin, D., Dussaigne, A., Ganière, J. D., Grandjean, N., Deveaud-Plédran, B.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 537 KB

english, 2009

43

Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector

Byrne, Declan, Natali, Franck, Damilano, Benjamin, Dussaigne, Amelie, Grandjean, Nicolas, Massies, Jean

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 115 KB

english, 2003

44

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a -Plane GaN Substrates

Corfdir, Pierre, Dussaigne, Amélie, Teisseyre, Henryk, Suski, Tadeusz, Grzegory, Izabella, Lefebvre, Pierre, Giraud, Etienne, Shahmohammadi, Mehran, Phillips, Richard T., Ganiere, Jean-Daniel, Grandje

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 461 KB

english, 2013

45

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Dussaigne, Amélie, Gonschorek, Marcus, Malinverni, Marco, Py, Marcel A., Martin, Denis, Mouti, Anas, Stadelmann, Pierre, Grandjean, Nicolas

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 288 KB

english, 2010

46

AlGaN/GaN HEMT on (111) single crystalline diamond

Alomari, M., Dussaigne, A., Martin, D., Grandjean, N., Gaquière, C., Kohn, E.

Journal:

Electronics Letters

Year:

2010

Language:

english

File:

PDF, 197 KB

english, 2010

47

Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

Bavencove, A.-L., Gilet, P., Dussaigne, A., Dang, Le Si, Martin, B., Ferret, P., Eymery, J., Durand, C., Lafossas, M., Salomon, D., André, B., Levy, F.

Journal:

Electronics Letters

Year:

2011

Language:

english

File:

PDF, 218 KB

english, 2011

48

SPIE Proceedings [SPIE SPIE Optical Engineering + Applications - San Diego, California, United States (Sunday 17 August 2014)] Thirteenth International Conference on Solid State Lighting - Complete solid state lighting (SSL) line at CEA LETI

Kane, Matthew H., Jiao, Jianzhong, Dietz, Nikolaus, Huang, Jian-Jang, Robin, I. C., Ferret, P., Dussaigne, A., Bougerol, C., Salomon, D., Chen, X. J., Charles, M., Tchoulfian, P., Gasse, A., Lagrange,

Year:

2014

Language:

english

File:

PDF, 3.36 MB

english, 2014

49

Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

R. Kudrawiec, M. Gladysiewicz, A. Dussaigne, H. Teisseyre, M. Boćkowski, I. Grzegory, T. Suski, J. Misiewicz, N. Grandjean

Year:

2011

Language:

english

File:

PDF, 547 KB

english, 2011

50

Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice

Peres, M., Neves, A. J., Monteiro, T., Magalhães, S., Franco, N., Lorenz, K., Alves, E., Damilano, B., Massies, J., Dussaigne, A., Grandjean, N.

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2010

Language:

english

File:

PDF, 1.84 MB

english, 2010

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