A. Salokatve: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

51

Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector

Salokatve, A., Rakennus, K., Uusimaa, P., Pessa, M., Aherne, T., Doran, J. P., O’Gorman, J., Hegarty, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 340 KB

english, 1995

52

Band offsets at the GaInP/GaAs heterojunction

Lindell, A., Pessa, M., Salokatve, A., Bernardini, F., Nieminen, R. M., Paalanen, M.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 404 KB

english, 1997

53

Pseudomorphic separate confinement heterostructure blue-green diode lasers

Grillo, D. C., Fan, Y., Han, J., He, L., Gunshor, R. L., Salokatve, A., Hagerott, M., Jeon, H., Nurmikko, A. V., Hua, G. C., Otsuka, N.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 636 KB

english, 1993

54

[IEEE Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6 - San Francisco, CA, USA (1998.5.3-1998.5.8)] Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178) - High-power 650-nm laser diodes grown by solid-source molecular beam epitaxy

Toivonen, M., Savolainen, P., Jalonen, M., Salokatve, A., Dumitrescu, M., Pessa, M., Corvini, P.J., Fang, F., Jansen, M., Nabiev, R.F.

Year:

1998

Language:

english

File:

PDF, 147 KB

english, 1998

55

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - High characteristics temperature of strain-compensated 1.3 μm InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy

Savolainen, P., Toivonen, M., Salokatve, A., Asonen, H., Murison, R.

Year:

1996

Language:

english

File:

PDF, 232 KB

english, 1996

56

Room-temperature photoconductivity of InGaAs/GaAs strained-layer superlattices

Salokatve, A., Hovinen, M., Pessa, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 590 KB

english, 1991

57

Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence

Pastrňák, J., Bosacchi, A., Salokatve, A., Varrio, J., Láznicka, M.

Journal:

Materials Science Forum

Year:

1991

File:

PDF, 311 KB

1991

58

AlGaAs/GaAs Heterojunction Photodiodes Grown by MBE

Riesz, Ferenc, Szentpáli, B., Mojzes, I., Salokatve, A., Asonen, H., Pessa, M.

Journal:

Materials Science Forum

Year:

1991

File:

PDF, 235 KB

1991

59

MBE Grown Planar Doped Barrier Diodes for Microwave Purposes

Tuyen, V.V., Szentpáli, B., Mojzes, I., Salokatve, A., Asonen, H., Pessa, M.

Journal:

Materials Science Forum

Year:

1991

File:

PDF, 258 KB

1991

60

Continuous-wave, room temperature, ridge waveguide green-blue diode laser

Salokatve, A., Jeon, H., Ding, J., Hovinen, M., Nurmikko, A.V., Grillo, D.C., Li He,, Han, J., Fan, Y., Ringle, M., Gunshor, R.L., Hua, G.C., Otsuka, N.

Journal:

Electronics Letters

Year:

1993

Language:

english

File:

PDF, 523 KB

english, 1993

61

Multiplication noise in GaAs/AlGaAs multiquantum well avalanche photodiodes with different well widths

Salokatve, A., Toivonen, M., Hovinen, M.

Journal:

Electronics Letters

Year:

1992

Language:

english

File:

PDF, 317 KB

english, 1992

62

SPIE Proceedings [SPIE Symposium on Integrated Optoelectronics - San Jose, CA (Thursday 20 January 2000)] In-Plane Semiconductor Lasers IV - High-power highly reliable Al-free active region laser diodes in the 785- to 830-nm region

Nightingale, John L., Finander, Michael J., Nabiev, Rashit F., Kuuslahti, Tiina E., Koengaes, Jukka, Salokatve, Arto K., Mawst, Luke J., Martinelli, Ramon U.

Year:

2000

Language:

english

File:

PDF, 320 KB

english, 2000

63

[IEEE Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting - San Francisco, CA, USA (10-13 Nov. 1997)] Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting - Oxide-confined AlGaInP/AlGaAs visible resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy

Jalonen, M., Toivonen, M., Kongas, J., Savolainen, P., Salokatve, A., Pessa, M.

Year:

1996

Language:

english

File:

PDF, 140 KB

english, 1996

64

[IEEE Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting - Orlando, FL, USA (1-4 Dec. 1998)] Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243) - 795 nm-emitting 40 W CW high-temperature laser diode bars with Al-free active area

Bournes, P., Asonen, H., Fang, F., Finander, M., Jansen, M., Nabiev, R.F., Nappi, J., Rakkenus, K., Salokatve, A.

Year:

1998

Language:

english

File:

PDF, 146 KB

english, 1998

65

New Approach to Growth of High-Quality GaAs Layers on Si Substrates

Varrio, Jukka, Salokatve, Arto, Asonen, Harry, Hovinen, Minna, Pessa, Markus, Ishida, Koichi, Kitajima, Hiroshi

Journal:

MRS Proceedings

Year:

1988

Language:

english

File:

PDF, 1.39 MB

english, 1988

66

MBE Growth and Characterization of II-VI Blue/Green Laser Diodes Having CW Operation at Room Temperature

Ringle, M.D., Grillo, D.C., Fan, Y., He, L., Han, J., Gunshor, R.L., Salokatve, A., Jeon, H., Hovinen, M., Nurmikko, A.V., Hua, G.C., Otsuka, N.

Journal:

MRS Proceedings

Year:

1994

Language:

english

File:

PDF, 334 KB

english, 1994

67

Identification Of The Native Vacancy Defects In ZnSxSe1−x And MgyZn1−y SxSe1−x by Positron Annihilation

Saarinen, K., Laine, T., Skog, K., Oila, J., Hautojärvi, P., Rakennus, K., Uusimaa, P., Salokatve, A., Pessa, M.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 468 KB

english, 1996

68

SPIE Proceedings [SPIE Optoelectronics and High-Power Lasers & Applications - San Jose, CA (Saturday 24 January 1998)] In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II - High-power diode lasers grown by solid-source MBE

Pessa, Markus, Jalonen, Marco U., Salokatve, Arto K., Savolainen, Pekka, Toivonen, Mika, Murison, Richard F., Panarello, Tullio, Jansen, Michael, Corvini, Pat, Choi, Hong K., Zory, Peter S.

Year:

1998

Language:

english

File:

PDF, 473 KB

english, 1998

69

SPIE Proceedings [SPIE Photonics for Industrial Applications - Boston, MA (Monday 31 October 1994)] II-VI Blue/Green Laser Diodes - Physics of gain and stimulated emission in II-VI diode lasers

Ding, J., Kozlov, Vladimir G., Kelkar, P., Salokatve, A., Nurmikko, Arto V., Han, Jung, Grillo, Donald C., Ringle, Mike D., Gunshor, Robert L., Gunshor, Robert L., Nurmikko, Arto V.

Year:

1994

Language:

english

File:

PDF, 515 KB

english, 1994

70

SPIE Proceedings [SPIE OE/LASE '94 - Los Angeles, CA (Sunday 23 January 1994)] Epitaxial Growth Processes - Epitaxial growth of quaternary (Zn,Mg)(S,Se) for pseudomorphic separate confinement heterostructure (SCH) laser structures

He, L., Grillo, Donald C., Han, Jung, Fan, Yongping, Ringle, Mike D., Clark, S. M., Gunshor, Robert L., Jeon, Heonsu, Salokatve, A., Nurmikko, Arto V., Hua, Guo-Chun, Otsuka, Nobuo, Palmstrom, Chris J

Year:

1994

Language:

english

File:

PDF, 674 KB

english, 1994

71

SPIE Proceedings [SPIE Optoelectronics and High-Power Lasers & Applications - San Jose, CA (Saturday 24 January 1998)] Physics and Simulation of Optoelectronic Devices VI - ZnSe-based light emitters grown on wide-gap III-V buffer layers

Uusimaa, Petteri, Salokatve, Arto K., Savolainen, Pekka, Rinta-Moykky, A., Pessa, Markus, Souifi, A., Adhiri, R., Kiriakidis, George, Moschovis, K., Stoimenos, J., Osinski, Marek, Blood, Peter, Ishiba

Year:

1998

Language:

english

File:

PDF, 1.81 MB

english, 1998

72

SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials

Pessa, Markus, Hakkarainen, T., Keskinen, Jari, Rakennus, Keijo, Salokatve, Arto K., Zhang, Guodong, Asonen, Harry M., Razeghi, Manijeh

Year:

1991

Language:

english

File:

PDF, 485 KB

english, 1991

73

All solid source molecular beam epitaxy growth of 1.35 µm wavelength strained-layer GaInAsP quantum well laser

Toivonen, M., Näppi, J., Salokatve, A., Pessa, M., Jalonen, M., Asonen, H., Murison, R.

Journal:

Electronics Letters

Year:

1995

Language:

english

File:

PDF, 321 KB

english, 1995

74

Oxide-confined resonant cavity red light-emitting diode grown by solid source molecular beam epitaxy

Jalonen, M., Toivonen, M., Köngäs, J., Salokatve, A., Pessa, M.

Journal:

Electronics Letters

Year:

1997

Language:

english

File:

PDF, 295 KB

english, 1997

75

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy

Salokatve, A., Toivonen, M., Asonen, H., Pessa, M., Likonen, J.

Year:

1996

Language:

english

File:

PDF, 337 KB

english, 1996

76

Monolithic 1.3 [micro sign]m resonant cavity light emitting diode grown by solid source molecular beam epitaxy

Jalonen, M., Köngäs, J., Toivonen, M., Savolainen, P., Orsila, S., Salokatve, A., Pessa, M.

Journal:

Electronics Letters

Year:

1998

Language:

english

File:

PDF, 291 KB

english, 1998

77

[OSA Advanced Semiconductor Lasers and Their Applications - Santa Barbara, California (1999..-..)] Advanced Semiconductor Lasers and Their Applications - Performance and reliability of high-power 670-690 nm CW laser diode bars grown by solid source molecular beam epitaxy

Corvini, P.J., Bournes, P.A., Fang, F., Finander, M., Jansen, M., Nabiev, R.F., Widman, M., Orsila, S., Saarinen, M., Salokatve, A., Savolainen, P., Toivonen, M., Uusimaa, P.

Year:

1999

Language:

english

File:

PDF, 624 KB

english, 1999

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски