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51

Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review

Gerrer, L., Ding, J., Amoroso, S.M., Adamu-Lema, F., Hussin, R., Reid, D., Millar, C., Asenov, A.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 7.87 MB

english, 2014

52

Special section reliability and variability of devices for circuits and systems

Asenov, Asen, Schlichtmann, Ulf, Tan, Cher Ming, Wong, Hei, Zhou, Xing

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 154 KB

english, 2014

53

Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs

Wang, Xingsheng, Brown, Andrew R., Cheng, Binjie, Roy, Scott, Asenov, Asen

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 2.10 MB

english, 2014

54

Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET

Mohd Zain, Anis Suhaila, Markov, Stanislav, Cheng, Binjie, Asenov, Asen

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.06 MB

english, 2013

55

RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study

Amoroso, Salvatore Maria, Gerrer, Louis, Markov, Stanislav, Adamu-Lema, Fikru, Asenov, Asen

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 2.34 MB

english, 2013

56

[IEEE 2012 IEEE International SOI Conference - Napa, CA, USA (2012.10.1-2012.10.4)] 2012 IEEE International SOI Conference (SOI) - Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG

Markov, Stanislav, Zain, Anis Suhaila Mohd, Cheng, Binjie, Asenov, Asen

Year:

2012

Language:

english

File:

PDF, 2.25 MB

english, 2012

57

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - Simulations of sub-100nm strained Si MOSFETs with high-k gate stacks

Yang,, Watling,, Adam-Lema,, Asenov,, Barker,

Year:

2004

Language:

english

File:

PDF, 138 KB

english, 2004

58

Impact of high-/spl kappa/ dielectric HfO/sub 2/ on the mobility and device performance of sub-100-nm nMOSFETs

Watling, J.R., Lianfeng Yang,, Asenov, A., Barker, J.R., Roy, S.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2005

Language:

english

File:

PDF, 569 KB

english, 2005

59

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - Tracking the propagation of individual ions through ion channels with nano-MOSFETs

Millar,, Asenov,, Brown,, Roy,

Year:

2004

Language:

english

File:

PDF, 155 KB

english, 2004

60

[IEEE The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. - Orlando, Florida, USA (17-18 Nov. 2003)] The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. - Scaling of RF linearity in DG and SOI MOSFETs

Ma, W., Kaya, S., Asenov, A.

Year:

2003

Language:

english

File:

PDF, 375 KB

english, 2003

61

Impact of NBTI/PBTI on SRAM Stability Degradation

Cheng, Binjie, Brown, Andrew R., Asenov, Asen

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 539 KB

english, 2011

62

[IEEE 2008 9th International Conference on Ultimate Integration on Silicon (ULIS) - Udine, Italy (2008.03.12-2008.03.14)] 2008 9th International Conference on Ultimate Integration of Silicon - Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants.

Bukhori, Muhammad Faiz, Roy, Scott, Asenov, Asen

Year:

2008

Language:

english

File:

PDF, 859 KB

english, 2008

63

RTN distribution comparison for bulk, FDSOI and FinFETs devices

Gerrer, L., Amoroso, S.M., Hussin, R., Asenov, A.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 1.12 MB

english, 2014

64

[IEEE 2009 IEEE International Symposium on Circuits and Systems - ISCAS 2009 - Taipei, Taiwan (2009.05.24-2009.05.27)] 2009 IEEE International Symposium on Circuits and Systems - Impact of random dopant induced statistical variability on inverter switching trajectories and timing variability

Kamsani, Noor Ain, Cheng, Binjie, Roy, Scott, Asenov, Asen

Year:

2009

Language:

english

File:

PDF, 1009 KB

english, 2009

65

[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors

Reid, Dave, Millar, Campbell, Roy, Gareth, Roy, Scott, Sinnott, Richard, Stewart, Gordon, Stewart, Graeme, Asenov, Asen

Year:

2008

Language:

english

File:

PDF, 1.66 MB

english, 2008

66

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks

Lee,, Brown,, Asenov,, Roy,

Year:

2004

Language:

english

File:

PDF, 166 KB

english, 2004

67

[IEEE 2014 International Workshop on Computational Electronics (IWCE) - Paris, France (2014.6.3-2014.6.6)] 2014 International Workshop on Computational Electronics (IWCE) - Metamorphosis of a nano wire: A 3-D coupled mode space NEGF study

Amoroso, Salvatore Maria, Georgiev, Vihar P., Towie, Ewan, Riddet, Craig, Asenov, Asen

Year:

2014

Language:

english

File:

PDF, 3.36 MB

english, 2014

68

[IEEE 2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010 - Paris, France (2010.05.30-2010.06.2)] Proceedings of 2010 IEEE International Symposium on Circuits and Systems - Statistical NBTI-effect prediction for ULSI circuits

Tang, Tong Boon, Murray, Alan F., Cheng, Binjie, Asenov, Asen

Year:

2010

Language:

english

File:

PDF, 587 KB

english, 2010

69

[IEEE 2010 IEEE Custom Integrated Circuits Conference -CICC 2010 - San Jose, CA, USA (2010.09.19-2010.09.22)] IEEE Custom Integrated Circuits Conference 2010 - Modeling and simulation of transistor and circuit variability and reliability

Asenov, A., Chen, B., Dideban, D., Kovac, U., Moezi, N., Millar, C., Roy, G., Brown, A. R., Roy, S.

Year:

2010

Language:

english

File:

PDF, 629 KB

english, 2010

70

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - Scattering from body thickness fluctuations in double gate MOSFETs: an ab initio Monte Carlo simulation study

Riddet,, Brow,, Alexander,, Watling,, Roy,, Asenov,

Year:

2004

Language:

english

File:

PDF, 140 KB

english, 2004

71

[IEEE 2012 IEEE International Symposium on Circuits and Systems - ISCAS 2012 - Seoul, Korea (South) (2012.05.20-2012.05.23)] 2012 IEEE International Symposium on Circuits and Systems - A framework to study time-dependent variability in circuits at sub-35nm technology nodes

Tang, Tong Boon, Murray, Alan F., Cheng, Binjie, Asenov, Asen

Year:

2012

Language:

english

File:

PDF, 1.28 MB

english, 2012

72

The Internal Contradiction and the Unconscious Sources of Activity

Geraskov, Emil Asenov

Journal:

The Journal of Psychology

Year:

1994

Language:

english

File:

PDF, 658 KB

english, 1994

73

[IEEE TELSIKS 2013 - 2013 11th International Conference on Telecommunication in Modern Satellite, Cable and Broadcasting Services - Nis, Serbia (2013.10.16-2013.10.19)] 2013 11th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS) - Lossy transmision with arbitrary gradient permittivity and permeability and constant impedance throughout the structure

Dalarsson, M., Norgren, M., Asenov, T., Doncov, N.

Year:

2013

Language:

english

File:

PDF, 471 KB

english, 2013

74

[IEEE 2015 IEEE International Symposium on Circuits and Systems (ISCAS) - Lisbon, Portugal (2015.5.24-2015.5.27)] 2015 IEEE International Symposium on Circuits and Systems (ISCAS) - Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits

Asenov, A., Ding, J., Reid, D., Asenov, P., Amoroso, S., Adamu-Lema, F., Gerrer, L.

Year:

2015

Language:

english

File:

PDF, 1.37 MB

english, 2015

75

Comparison of Si and crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations

Gerrer, L., Georgiev, V., Amoroso, S.M., Towie, E., Asenov, A.

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 1.68 MB

english, 2015

76

[IEEE TELSIKS 2011 - 2011 10th International Conference on Telecommunication in Modern Satellite, Cable and Broadcasting Services - Nis (2011.10.5-2011.10.8)] 2011 10th International Conference on Telecommunication in Modern Satellite Cable and Broadcasting Services (TELSIKS) - Time-domain modelling of graded refractive index metamaterials by using 3D TLM Z-transform method

Doncov, N., Asenov, T., Stankovic, Z., Paul, J.

Year:

2011

Language:

english

File:

PDF, 759 KB

english, 2011

77

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

Donetti, Luca, Sampedro, Carlos, Gamiz, Francisco, Godoy, Andres, Garcia-Ruiz, Francisco J., Towiez, Ewan, Georgiev, Vihar P., Amoroso, Salvatore Maria, Riddet, Craig, Asenov, Asen

Year:

2015

Language:

english

File:

PDF, 963 KB

english, 2015

78

[IEEE 2016 17th International Symposium on Quality Electronic Design (ISQED) - Santa Clara, CA, USA (2016.3.15-2016.3.16)] 2016 17th International Symposium on Quality Electronic Design (ISQED) - Nanowire transistor solutions for 5nm and beyond

Asenov, A., Wang, Y., Cheng, B., Wang, X., Asenov, P., Al-Ameri, T., Georgiev, V. P.

Year:

2016

Language:

english

File:

PDF, 2.48 MB

english, 2016

79

Dopants and roughness induced resonances in thin Si nanowire transistors: A self-consistent NEGF-poisson study

Martinez, A, Barker, J R, Seoane, N, Brown, A R, Asenov, A

Journal:

Journal of Physics Conference Series

Year:

2010

Language:

english

File:

PDF, 7.69 MB

english, 2010

80

Engineering amorphous-crystalline interfaces in TiO 2−x /TiO 2−y -based bilayer structures for enhanced resistive switching and synaptic properties

Bousoulas, P., Asenov, P., Karageorgiou, I., Sakellaropoulos, D., Stathopoulos, S., Tsoukalas, D.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 2.29 MB

english, 2016

81

Development of algorithm for computer drawing envelopes of interference reflectance spectra for thin film specimens

Minkov, Dorian Asenov, Gavrilov, Gavril Mihaylov, Marquez, Emilio, Ruano, Susana Maria Fernandez, Stoynova, Anna Vladova

Journal:

Optik - International Journal for Light and Electron Optics

Year:

2017

Language:

english

File:

PDF, 600 KB

english, 2017

82

Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications

Al-Ameri, Talib, Georgiev, Vihar P., Adamu-Lema, Fikru, Asenov, Asen

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 3.15 MB

english, 2017

83

Software Server for Automatic Generation of Audio Lectures (uListenSrv)

Petrov, Milen, Asenov, Asen, Aleksieva-Petrova, Adelina

Journal:

International Journal of Advanced Corporate Learning (iJAC)

Year:

2017

Language:

english

File:

PDF, 1.18 MB

english, 2017

84

Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

Medina-Bailon, Cristina, Padilla, Jose L., Sadi, Toufik, Sampedro, Carlos, Godoy, Andres, Donetti, Luca, Georgiev, Vihar P., Gamiz, Francisco, Asenov, Asen

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 3.63 MB

english, 2019

85

Active Localization of Gas Leaks using Fluid Simulation

Asenov, Martin, Rutkauskas, Marius, Reid, Derryck, Subr, Kartic, Ramamoorthy, Subramanian

Journal:

IEEE Robotics and Automation Letters

Year:

2019

Language:

english

File:

PDF, 5 KB

english, 2019

86

Modelling passenger service rate at a transport hub serviced by a single urban bus route as a queueing system

Asenov, A, Pencheva, V, Georgiev, I

Journal:

IOP Conference Series Materials Science and Engineering

Year:

2019

File:

PDF, 431 KB

2019

87

Vid2Param: Modeling of Dynamics Parameters From Video

Asenov, Martin, Burke, Michael, Angelov, Daniel, Davchev, Todor, Subr, Kartic, Ramamoorthy, Subramanian

Journal:

IEEE Robotics and Automation Letters

Year:

2020

File:

PDF, 3.06 MB

2020

88

Commissioning and simulation of CHROMIE, a high-rate test beam telescope

Journal:

Journal of Instrumentation

Year:

2020

File:

PDF, 3.67 MB

2020

89

Relationships between the material properties of silicone hydrogels: Desiccation, wettability and lubricity

Eftimov, Petar Borisov, Yokoi, Norihiko, Peev, Nikola, Paunski, Yasen, Georgiev, Georgi Asenov

Journal:

Journal of Biomaterials Applications

Year:

2020

File:

PDF, 744 KB

2020

90

Monte Carlo Analysis of Si/SiGe MODFET Performance Potential

S. Roy, A. Asenov, S. Babiker, J. R. Barker, S. P. Beaumont

Journal:

physica status solidi (b)

Year:

1997

Language:

english

File:

PDF, 140 KB

english, 1997

91

Efficient three-dimensional parallel simulations of PHEMTs

A. J. García-Loureiro, K. Kalna, A. Asenov

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2005

Language:

english

File:

PDF, 2.86 MB

english, 2005

92

Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

A. Asenov, G. Slavcheva, A.R. Brown, R. Balasubramaniam, J.H. Davies

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 503 KB

english, 2000

93

Effect of single-electron interface trapping in decanano MOSFETs: A 3D atomistic simulation study

A. Asenov, R. Balasubramaniam, A.R. Brown, J.H. Davies

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 103 KB

english, 2000

94

New evidence for velocity overshoot in a 200 nm pseudomorphic HEMT

S. Babiker, N. Cameron, A. Asenov, S.P. Beaumont

Journal:

Microelectronics Journal

Year:

1996

Language:

english

File:

PDF, 687 KB

english, 1996

95

Numerical study of the effect of the doping profile on the threshold voltage of narrow-channel MOS transistor

Asen M. Asenov, Evgeny N. Stefanov, Bozhidar Z. Antov

Journal:

Solid-State Electronics

Year:

1987

Language:

english

File:

PDF, 905 KB

english, 1987

96

Experimental study and modeling of band-to-band tunneling leakage current in thin-oxide MOSFETs

I. Nedev, A. Asenov, E. Stefanov

Journal:

Solid-State Electronics

Year:

1991

Language:

english

File:

PDF, 739 KB

english, 1991

97

Finite element Monte Carlo simulation of recess gate compound FFTs

S Babiker, A Asenov, J.R Barker, S.P Beaumont

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 696 KB

english, 1996

98

Application of Mössbauer spectroscopy in pyritic and copper calcines studies

R. Dimitrov, A. Hekimova, S. Asenov, T. Ruskov, T. Tomov

Journal:

Thermochimica Acta

Year:

1980

Language:

english

File:

PDF, 449 KB

english, 1980

99

Speed-up of scalable iterative linear solvers implemented on an array of transputers

A. Asenov, D. Reid, J.R. Barker

Journal:

Parallel Computing

Year:

1995

Language:

english

File:

PDF, 866 KB

english, 1995

100

Hot-carrier degradation monitoring in LDD n-MOSFETs using drain gated-diode measurements

A. Asenov, J. Berger, W. Weber, M. Bollu, F. Koch

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 189 KB

english, 1991

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