54

Characterization of the buffer layer in SiC heteroepitaxy

Year:
1993
Language:
english
File:
PDF, 359 KB
english, 1993
60

Study of SiC single-crystal sublimation growth conditions

Year:
1995
Language:
english
File:
PDF, 348 KB
english, 1995
76

Nickel film on (001) SiC: Thermally induced reactions

Year:
1998
Language:
english
File:
PDF, 339 KB
english, 1998
77

Nitrogen implantation in 4H and 6H–SiC

Year:
1999
Language:
english
File:
PDF, 182 KB
english, 1999
84

Oxidation kinetics of SiC deposited from CH3SiCl3/H2under CVI conditions

Year:
1992
Language:
english
File:
PDF, 726 KB
english, 1992