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51

Nuclear-physical characteristics of the AKN-T set of neutron dosimeters

V. P. Yaryna, N. B. Galiev

Journal:

Year:

1982

Language:

english

File:

PDF, 350 KB

english, 1982

52

Relationship between strenuous physical exercise and immediate type allergy

N. Yu. Sotnikova, R. S. Galiev

Journal:

Bulletin of Experimental Biology and Medicine

Year:

2000

Language:

english

File:

PDF, 169 KB

english, 2000

53

Effect of water density inversion on the plane-parallel flow and heat transfer in a channel of constant width

I. M. Galiev, P. T. Zubkov

Journal:

Year:

2000

Language:

english

File:

PDF, 401 KB

english, 2000

54

Anomalous behavior of structural elements under the action of blast loads

Sh. U. Galiev, É. D. Skurlatov, O. P. Panova

Journal:

Strength of Materials

Year:

1997

Language:

english

File:

PDF, 829 KB

english, 1997

55

Introduction of a new visbreaking unit at Salavatnefteorgsintez Co.

A. V. Efremov, S. I. Myachin, V. G. Zaitsev, R. F. Galiev, Yu. N. Lebedev, A. S. Levandovskii, A. B. Nikolaev, V. A. Ludchenko

Journal:

Chemistry and Technology of Fuels and Oils

Year:

2010

Language:

english

File:

PDF, 894 KB

english, 2010

56

Use of the superplasticity phenomenon for developing a process for fabricating parts from magnesium alloys

R. O. Kaibyshev, A. M. Galiev

Journal:

Metal Science and Heat Treatment

Year:

2006

Language:

english

File:

PDF, 150 KB

english, 2006

57

Synthesis of tris(β-diketones) and study of their complexation with some transition metals

S. N. Podyachev, S. N. Sudakova, A. K. Galiev, A. R. Mustafina, V. V. Syakaev, R. R. Shagidullin, I. Bauer, A. I. Konovalov

Journal:

Russian Chemical Bulletin

Year:

2006

Language:

english

File:

PDF, 405 KB

english, 2006

58

Carboranylphosphites as new ligands for Rh-catalyzed asymmetric hydrogenation

S. E. Lyubimov, A. S. Safronov, A. A. Tyutyunov, V. N. Kalinin, E. E. Said-Galiev, A. R. Khokhlov, P. V. Petrovskii, P. M. Valetskii, V. A. Davankov

Journal:

Russian Chemical Bulletin

Year:

2008

Language:

english

File:

PDF, 305 KB

english, 2008

59

n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties

I. S. Vasil’evskii, G. B. Galiev, G. V. Ganin, R. M. Imamov, E. A. Klimov, A. A. Lomov, V. G. Mokerov, V. V. Saraikin, M. A. Chuev

Journal:

Russian Microelectronics

Year:

2005

Language:

english

File:

PDF, 132 KB

english, 2005

60

On the construction of solutions of systems of linear ordinary differential equations in the neighbourhood of a regular singularity

V.I. Galiev, A.F. Polupanov, I.E. Shparlinski

Journal:

Journal of Computational and Applied Mathematics

Year:

1992

Language:

english

File:

PDF, 1.23 MB

english, 1992

61

Cone formation in targets beneath a penetrating projectile

V.V. Astanin, Sh.U. Galiev, K.B. Ivashchenko

Journal:

International Journal of Impact Engineering

Year:

1991

Language:

english

File:

PDF, 969 KB

english, 1991

62

The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry

L.A. Ponomarenko, D.T.N. de Lang, A. de Visser, V.A. Kulbachinskii, G.B. Galiev, H. Künzel, A.M.M. Pruisken

Journal:

Solid State Communications

Year:

2004

Language:

english

File:

PDF, 220 KB

english, 2004

63

Trans-resonant evolution of wave singularities and vortices

Journal:

Physics Letters A

Year:

2003

Language:

english

File:

PDF, 222 KB

english, 2003

64

Resonant travelling surface waves

Sh.U. Galiev, T.Sh. Galiev

Journal:

Physics Letters A

Year:

1998

Language:

english

File:

PDF, 714 KB

english, 1998

65

Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures

G. B. Galiev, R. M. Imamov, B. K. Medvedev, V. G. Mokerov, É. Kh. Mukhamedzhanov, É. M. Pashaev, V. B. Cheglakov

Journal:

Year:

1997

Language:

english

File:

PDF, 65 KB

english, 1997

66

Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy

V. G. Mokerov, Yu. V. Fedorov, A. V. Guk, G. B. Galiev, V. A. Strakhov, N. G. Yaremenko

Journal:

Year:

1998

Language:

english

File:

PDF, 70 KB

english, 1998

67

Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers

V. G. Mokerov, G. B. Galiev, Yu. V. Slepnev, Yu. V. Khabarov

Journal:

Year:

1998

Language:

english

File:

PDF, 113 KB

english, 1998

68

Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations

G. B. Galiev, V. É. Kaminskii, V. G. Mokerov, V. K. Nevolin, V. V. Saraikin, Yu. V. Slepnev

Journal:

Year:

2000

Language:

english

File:

PDF, 126 KB

english, 2000

69

Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)Borientations

G. B. Galiev, V. G. Mokerov, Yu. V. Slepnev, Yu. V. Khabarov, A. A. Lomov, R. M. Imamov

Journal:

Technical Physics

Year:

1999

Language:

english

File:

PDF, 80 KB

english, 1999

70

Effect of misorientation angle on the photoluminescence spectra of Si (δ)-doped GaAs (111)A layers grown by molecular beam epitaxy

G. B. Galiev, V. G. Mokerov, Yu. V. Khabarov

Journal:

Doklady Physics

Year:

2001

Language:

english

File:

PDF, 67 KB

english, 2001

71

A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(ar 1ar 1)] direction

G. B. Galiev, V. G. Mokerov, É. R. Lyapin, V. V. Saraikin, Yu. V. Khabarov

Journal:

Year:

2001

Language:

english

File:

PDF, 268 KB

english, 2001

72

Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates

G. B. Galiev, V. G. Mokerov, V. V. Saraikin, Yu. V. Slepnev, G. I. Shagimuratov, R. M. Imamov, É. M. Pashaev

Journal:

Technical Physics

Year:

2001

Language:

english

File:

PDF, 232 KB

english, 2001

73

The use of the amphoteric nature of impurity silicon atoms for obtaining planarp-njunctions on GaAs (111)A substrates by molecular beam epitaxy

G. B. Galiev, V. É. Kaminskii, V. G. Mokerov, L. É. Velikhovskii

Journal:

Year:

2001

Language:

english

File:

PDF, 178 KB

english, 2001

74

Multichannel carrier scattering at quantum-well heterostructures

V. I. Galiev, A. N. Kruglov, A. F. Polupanov, E. M. Goldys, T. L. Tansley

Journal:

Year:

2002

Language:

english

File:

PDF, 83 KB

english, 2002

75

Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well

V. G. Mokerov, G. B. Galiev, J. Pozela, K. Pozela, V. Juciene

Journal:

Year:

2002

Language:

english

File:

PDF, 57 KB

english, 2002

76

Conductance anisotropy of δ-Si doped GaAs layers grown by molecular beam epitaxy on (111)A GaAs substrates and misoriented in the([2ar 1ar 1])direction

G. B. Galiev, V. G. Mokerov, V. A. Kul’bachinskii, V. G. Kytin, R. A. Lunin, A. V. Derkach, I. S. Vasil’evskii

Journal:

Doklady Physics

Year:

2002

Language:

english

File:

PDF, 66 KB

english, 2002

77

Study of the effects of size quantization in coupled AlxGa1−xAs/GaAs/AlxGa1−xas quantum wells by means of photoreflectance spectroscopy

L. P. Avakyants, P. Yu. Bokov, G. B. Galiev, V. É. Kaminskii, V. A. Kul’bachinskii, V. G. Mokerov, A. V. Chervyakov

Journal:

Optics and Spectroscopy

Year:

2002

Language:

english

File:

PDF, 75 KB

english, 2002

78

Investigation of electronic transitions in coupled-quantum-well structures with a built-in electric field by photoreflectance spectroscopy

G. B. Galiev, V. É. Kaminskii, V. G. Mokerov, L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, V. A. Kul’bachinskii

Journal:

Year:

2003

Language:

english

File:

PDF, 68 KB

english, 2003

79

Photoluminescence study of AlGaAs/GaAs/AlGaAs double quantum wells separated by a thin AlAs layer

G. B. Galiev, M. V. Karachevtseva, V. G. Mokerov, V. A. Strakhov, G. N. Shkerdin, N. G. Yaremenko

Journal:

Year:

2003

Language:

english

File:

PDF, 69 KB

english, 2003

80

Electron transport in coupled quantum wells with double-Sided doping

G. B. Galiev, V. E. Kaminskii, V. G. Mokerov, V. A. Kul’bachinskii, R. A. Lunin, I. S. Vasil’evskii, A. V. Derkach

Journal:

Year:

2003

Language:

english

File:

PDF, 79 KB

english, 2003

81

Structural characterization of interfaces in the AlxGa1−xAs/GaAs/AlxGa1−xAs heterostructures by high-resolution X-ray reflectometry and diffractometry

A. A. Lomov, A. G. Sutyrin, D. Yu. Prokhorov, G. B. Galiev, Yu. V. Khabarov, M. A. Chuev, R. M. Imamov

Journal:

Crystallography Reports

Year:

2005

Language:

english

File:

PDF, 222 KB

english, 2005

82

New phenyl-substituted polyphenylenes with a nanoporous structure and ultralow dielectric constants formed in supercritical carbon dioxide

M. L. Keshtov, E. E. Said-Galiev, S. S. Abramchuk, A. R. Khokhlov

Journal:

Doklady Physical Chemistry

Year:

2011

Language:

english

File:

PDF, 159 KB

english, 2011

83

Nanostructure of laser-deposited palladium thin films on different substrates

I. N. Nikolaev, R. R. Galiev

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Year:

2008

Language:

english

File:

PDF, 281 KB

english, 2008

84

Exciton-exciton interaction in GaAs/AlGaAs quantum wells under intense optical excitation

N. G. Yaremenko, G. B. Galiev, M. V. Karachevtseva, V. G. Mokerov, V. A. Strakhov

Journal:

Doklady Physics

Year:

2006

Language:

english

File:

PDF, 164 KB

english, 2006

85

Nonstoichiometric defects in silicon-doped GaAs epilayers grown on (111)A-and (111)B-oriented substrates

N. G. Yaremenko, G. B. Galiev, M. V. Karachevtseva, V. G. Mokerov, V. A. Strakhov

Journal:

Doklady Physics

Year:

2008

Language:

english

File:

PDF, 173 KB

english, 2008

86

Electrical behavior of modulation-and delta-doped AlxGa1 −xAs/InyGa1 −yAs/GaAs PHEMT structures

G. B. Galiev, I. S. Vasil’evskii, E. A. Klimov, V. G. Mokerov

Journal:

Russian Microelectronics

Year:

2006

Language:

english

File:

PDF, 190 KB

english, 2006

87

X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures

I. A. Subbotin, M. A. Chuev, E. M. Pashaev, R. M. Imamov, G. B. Galiev, S. A. Tikhomirov, P. Kacerovsky

Journal:

Crystallography Reports

Year:

2007

Language:

english

File:

PDF, 326 KB

english, 2007

88

Study of the relationship between the crystal structure of nanolayers and electrical properties in AlxGa1−xAs/InyGa1−yAs pseudobinary heterostructures by double-crystal X-ray diffraction

R. M. Imamov, I. A. Subbotin, G. B. Galiev

Journal:

Crystallography Reports

Year:

2008

Language:

english

File:

PDF, 216 KB

english, 2008

89

The electrical and structural properties of InyGa1 −yAs/InxAl1 −xAs/InP quantum wells with different InAs content

I. S. Vasil’evskiĭ, G. B. Galiev, V. G. Mokerov, E. A. Klimov, R. M. Imamov, I. A. Subbotin

Journal:

Crystallography Reports

Year:

2010

Language:

english

File:

PDF, 161 KB

english, 2010

90

Structural and electrical properties of quantum wells with nanoscale InAs inserts in InyAl1 −yAs/InxGa1 −xAs heterostructures on InP substrates

A. L. Vasil’ev, I. S. Vasil’evskii, G. B. Galiev, R. M. Imamov, E. A. Klimov, M. V. Kovalchuk, D. S. Ponomarev, V. V. Roddatis, I. A. Subbotin

Journal:

Crystallography Reports

Year:

2011

Language:

english

File:

PDF, 2.33 MB

english, 2011

91

Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates

G. B. Galiev, I. S. Vasil’evskii, R. M. Imamov, E. A. Klimov, S. S. Pushkarev, I. A. Subbotin

Journal:

Crystallography Reports

Year:

2011

Language:

english

File:

PDF, 202 KB

english, 2011

92

Influence of state hybridization on low-temperature electron transport in shallow quantum wells

I. S. Vasilevskii, V. A. Kulbachinskiĭ, R. A. Lunin, G. B. Galiev, V. G. Mokerov

Journal:

Journal of Experimental and Theoretical Physics

Year:

2007

Language:

english

File:

PDF, 264 KB

english, 2007

93

Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures withn-type δ-doped layers

Yu. V. Khabarov, V. V. Kapaev, V. A. Petrov, G. B. Galiev

Journal:

Year:

2006

Language:

english

File:

PDF, 288 KB

english, 2006

94

The effect of spacer-layer growth temperature on mobility in a two-dimensional electron gas in PHEMT structures

G. B. Galiev, I. S. Vasil’evskiĭ, E. A. Klimov, V. G. Mokerov, A. A. Cherechukin

Journal:

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

95

Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides

I. S. Vasil’evskiĭ, G. B. Galiev, E. A. Klimov, V. G. Mokerov, S. S. Shirokov, R. M. Imamov, I. A. Subbotin

Journal:

Year:

2008

Language:

english

File:

PDF, 292 KB

english, 2008

96

Photoluminescence of Si-doped GaAs epitaxial layers

N. G. Yaremenko, M. V. Karachevtseva, V. A. Strakhov, G. B. Galiev, V. G. Mokerov

Journal:

Year:

2008

Language:

english

File:

PDF, 221 KB

english, 2008

97

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequencyfmaxas high as 100 GHz

V. G. Mokerov, A. L. Kuznetsov, Yu. V. Fedorov, A. S. Bugaev, A. Yu. Pavlov, E. N. Enyushkina, D. L. Gnatyuk, A. V. Zuev, R. R. Galiev, E. N. Ovcharenko, Yu. N. Sveshnikov, A. F. Tsatsulnikov, V. M. U

Journal:

Year:

2009

Language:

english

File:

PDF, 266 KB

english, 2009

98

Drift velocity of electrons in quantum wells in high electric fields

V. G. Mokerov, I. S. Vasil’evskii, G. B. Galiev, J. Požela, K. Požela, A. Sužiedėlis, V. Jucienė, Č. Paškević

Journal:

Year:

2009

Language:

english

File:

PDF, 232 KB

english, 2009

99

Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields

I. S. Vasil’evskii, G. B. Galiev, Yu. A. Matveev, E. A. Klimov, J. Požela, K. Požela, A. Sužiedėlis, Č. Paškevič, V. Jucienė

Journal:

Year:

2010

Language:

english

File:

PDF, 224 KB

english, 2010

100

Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures

R. A. Khabibullin, I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, D. S. Ponomarev, V. P. Gladkov, V. A. Kulbachinskii, A. N. Klochkov, N. A. Uzeeva

Journal:

Year:

2011

Language:

english

File:

PDF, 211 KB

english, 2011