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51

Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor

Liang, Gengchiau, Xiang, Jie, Kharche, Neerav, Klimeck, Gerhard, Lieber, Charles M., Lundstrom, Mark

Journal:

Year:

2007

Language:

english

File:

PDF, 132 KB

english, 2007

52

Thermally induced currents in graphene-based heterostructure

Zeng, Minggang, Feng, Yuanping, Liang, Gengchiau

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 1022 KB

english, 2011

53

Carrier transport in Bi2Se3 topological insulator slab

Gupta, Gaurav, Lin, Hsin, Bansil, Arun, Jalil, Mansoor Bin Abdul, Liang, Gengchiau

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2015

Language:

english

File:

PDF, 4.77 MB

english, 2015

54

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique

Dong, Yuan, Wang, Wei, Lei, Dian, Gong, Xiao, Zhou, Qian, Lee, Shuh Ying, Loke, Wan Khai, Yoon, Soon-Fatt, Tok, Eng Soon, Liang, Gengchiau, Yeo, Yee-Chia

Journal:

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

55

[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules

Yadav, Sachin, Tan, Kian-Hua, Annie,, Goh, Kian Hui, Subramanian, Sujith, Low, Kain Lu, Chen, Nanyan, Jia, Bowen, Yoon, Soon-Fatt, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

56

[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Performance evaluation of ferroelectric MOSFETs based on Gibbs free energy

Zhang, Xiaoyi, Liang, Gengchiau

Year:

2017

Language:

english

File:

PDF, 284 KB

english, 2017

57

[IEEE 2014 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2014.6.9-2014.6.12)] 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers - Germanium-Tin on Silicon avalanche photodiode for short-wave infrared imaging

Yuan Dong,, Wei Wang,, Xin Xu,, Xiao Gong,, Dian Lei,, Qian Zhou,, Zhe Xu,, Soon-Fatt Yoon,, Gengchiau Liang,, Yee-Chia Yeo,

Year:

2014

Language:

english

File:

PDF, 494 KB

english, 2014

58

[IEEE 2007 IEEE Conference on Electron Devices and Solid-State Circuits - Tainan, Taiwan (2007.12.20-2007.12.22)] 2007 IEEE Conference on Electron Devices and Solid-State Circuits - Structure Effects in the gate-all-around Silicon Nanowire MOSFETs

Liang, Gengchiau

Year:

2007

Language:

english

File:

PDF, 4.41 MB

english, 2007

59

High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects

Liang, Gengchiau, Bala Kumar, S., Jalil, M. B. A., Tan, S. G.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 871 KB

english, 2011

60

Wave Function Parity Loss Used to Mitigate Thermal Broadening in Spin-orbit Coupled Zigzag Graphene Analogues

Sadi, Mohammad Abdullah, Liang, Gengchiau

Journal:

Scientific Reports

Year:

2017

Language:

english

File:

PDF, 1.29 MB

english, 2017

61

A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors

Wang, Lingfei, Li, Yang, Feng, Xuewei, Ang, Kah-Wee, Gong, Xiao, Thean, Aaron Voon-Yew, Liang, Gengchiau

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 2.53 MB

english, 2018

62

[IEEE 2008 8th IEEE Conference on Nanotechnology (NANO) - Arlington, Texas, USA (2008.08.18-2008.08.21)] 2008 8th IEEE Conference on Nanotechnology - An Ab Initio Investigation of Energy Bandgap of Monolayer and Bilayer Graphene Nanoribbon Based on Different Basis Sets

Lam, Kai-Tak, Liang, Gengchiau

Year:

2008

Language:

english

File:

PDF, 237 KB

english, 2008

63

Ballistic Transport Performance of Silicane and Germanane Transistors

Kain Lu Low,, Wen Huang,, Yee-Chia Yeo,, Gengchiau Liang,

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.90 MB

english, 2014

64

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond

Low, Kain Lu, Yeo, Yee-Chia, Liang, Gengchiau

Year:

2014

Language:

english

File:

PDF, 393 KB

english, 2014

65

Efficient dual spin-valley filter in strained silicene

Yesilyurt, Can, Tan, Seng Ghee, Liang, Gengchiau, Jalil, Mansoor B. A.

Journal:

Applied Physics Express

Year:

2015

Language:

english

File:

PDF, 590 KB

english, 2015

66

Effects of Scalability and Floating Metal on NC-FETs Based on Real-Space Atomic Model

Zhang, Xiaoyi, Gong, Xiao, Liang, Gengchiau

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 880 KB

english, 2018

67

[IEEE 2017 Symposium on VLSI Technology - Kyoto, Japan (2017.6.5-2017.6.8)] 2017 Symposium on VLSI Technology - Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate

Kumar, Annie, Lee, Shuh-Ying, Yadav, Sachin, Tan, Kian Hua, Loke, Wan Khai, Li, Daosheng, Wicaksono, Satrio, Liang, Gengchiau, Yoon, Soon-Fatt, Gong, Xiao, Antoniadis, Dimitri, Yeo, Yee-Chia

Year:

2017

Language:

english

File:

PDF, 1.05 MB

english, 2017

68

Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range

Wang, Wei, Dong, Yuan, Lee, Shuh-Ying, Loke, Wan-Khai, Lei, Dian, Yoon, Soon-Fatt, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia

Journal:

Year:

2017

Language:

english

File:

PDF, 2.29 MB

english, 2017

69

[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering

Lam, Kai-Tak, Da, Haixia, Chin, Sai-Kong, Samudra, G., Yeo, Yee-Chia, Liang, Gengchiau

Year:

2010

Language:

english

File:

PDF, 398 KB

english, 2010

70

The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons

Bala Kumar, S, Jalil, M B A, Tan, S G, Liang, Gengchiau

Journal:

Journal of Physics Condensed Matter

Year:

2010

Language:

english

File:

PDF, 1.64 MB

english, 2010

71

[IEEE 13th International Workshop on Computational Electronics (IWCE) - Beijing, China (2009.05.27-2009.05.29)] 2009 13th International Workshop on Computational Electronics - Computational Study of Graphene Nanoribbon Resonant Tunneling Diodes

Liang, Gengchiau, Teong, Hansen, Lam, Kai-Tak

Year:

2009

Language:

english

File:

PDF, 417 KB

english, 2009

72

Effect of phase transition on quantum transport in group-IV two-dimensional U-shape device

Sadi, Mohammad Abdullah, Gupta, Gaurav, Liang, Gengchiau

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.14 MB

english, 2014

73

Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

Tsai, Meng-Lin, Li, Ming-Yang, Retamal, José Ramón Durán, Lam, Kai-Tak, Lin, Yung-Chang, Suenaga, Kazu, Chen, Lih-Juann, Liang, Gengchiau, Li, Lain-Jong, He, Jr-Hau

Journal:

Advanced Materials

Year:

2017

Language:

english

File:

PDF, 1021 KB

english, 2017

74

Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ

Deng, Jiefang, Liang, Gengchiau, Gupta, Gaurav

Journal:

Scientific Reports

Year:

2017

Language:

english

File:

PDF, 2.82 MB

english, 2017

75

Voltage-Controlled Spintronic Stochastic Neuron for Restricted Boltzmann Machine with Weight Sparsity

Deng, Jiefang, Miriyala, Venkata Pavan Kumar, Zhu, Zhifeng, Fong, Xuanyao, Liang, Gengchiau

Journal:

IEEE Electron Device Letters

Year:

2020

File:

PDF, 603 KB

2020

76

Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation

Kumar, S. Bala, Jalil, M. B. A., Tan, S. G., Liang, Gengchiau

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.11 MB

english, 2010

77

Performance evaluation of electro-optic effect based graphene transistors

Gupta, Gaurav, Abdul Jalil, Mansoor Bin, Yu, Bin, Liang, Gengchiau

Journal:

Year:

2012

Language:

english

File:

PDF, 613 KB

english, 2012

78

Y-shape spin-separator for two-dimensional group-IV nanoribbons based on quantum spin hall effect

Gupta, Gaurav, Lin, Hsin, Bansil, Arun, Abdul Jalil, Mansoor Bin, Huang, Cheng-Yi, Tsai, Wei-Feng, Liang, Gengchiau

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.15 MB

english, 2014

79

Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor

Guo, Yan, Zhang, Xiaoyi, Low, Kain Lu, Lam, Kai-Tak, Yeo, Yee-Chia, Liang, Gengchiau

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.70 MB

english, 2015

80

[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack and contact modules

Goh, Kian-Hui, Tan, Kian-Hua, Yadav, Sachin, Annie,, Yoon, Soon-Fatt, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia

Year:

2015

Language:

english

File:

PDF, 1.12 MB

english, 2015

81

[IEEE 2017 Symposium on VLSI Technology - Kyoto, Japan (2017.6.5-2017.6.8)] 2017 Symposium on VLSI Technology - Record low specific contact resistivity (1.2×10 −9 Ω-cm 2 ) for P-type semiconductors: Incorporation of Sn into Ge and in-Situ Ga doping

Wu, Ying, Luo, Sheng, Wang, Wei, Masudy-Panah, Saeid, Lei, Dian, Gong, Xiao, Liang, Gengchiau, Yeo, Yee-Chia

Year:

2017

Language:

english

File:

PDF, 1.29 MB

english, 2017

82

2D Materials: Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency (Adv. Mater. 32/2017)

Tsai, Meng-Lin, Li, Ming-Yang, Retamal, José Ramón Durán, Lam, Kai-Tak, Lin, Yung-Chang, Suenaga, Kazu, Chen, Lih-Juann, Liang, Gengchiau, Li, Lain-Jong, He, Jr-Hau

Journal:

Advanced Materials

Year:

2017

File:

PDF, 1.82 MB

2017

83

Theoretical proposal for determining angular momentum compensation in ferrimagnets

Zhu, Zhifeng, Fong, Xuanyao, Liang, Gengchiau

Journal:

Physical Review B

Year:

2018

Language:

english

File:

PDF, 536 KB

english, 2018

84

High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection

Lukman, Steven, Ding, Lu, Xu, Lei, Tao, Ye, Riis-Jensen, Anders C., Zhang, Gang, Wu, Qing Yang Steve, Yang, Ming, Luo, Sheng, Hsu, Chuanghan, Yao, Liangzi, Liang, Gengchiau, Lin, Hsin, Zhang, Yong-Wei

Journal:

Nature Nanotechnology

Year:

2020

File:

PDF, 7.37 MB

2020

85

Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation

Liang, Gengchiau, Neophytou, Neophytos, Lundstrom, Mark S., Nikonov, Dmitri E.

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 861 KB

english, 2007

86

Influence of edge roughness on graphene nanoribbon resonant tunnelling diodes

Liang, Gengchiau, Khalid, Sharjeel Bin, Lam, Kai-Tak

Journal:

Journal of Physics D Applied Physics

Year:

2010

Language:

english

File:

PDF, 773 KB

english, 2010

87

Contact Effects in thin 3D-Topological Insulators: How does the current flow?

Gupta, Gaurav, Jalil, Mansoor Bin Abdul, Liang, Gengchiau

Journal:

Scientific Reports

Year:

2015

Language:

english

File:

PDF, 2.55 MB

english, 2015

88

Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors

Da, Haixia, Lam, Kai-Tak, Samudra, Ganesh S., Liang, Gengchiau, Chin, Sai-Kong

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 827 KB

english, 2012

89

Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials

Low, Kain Lu, Yeo, Yee-Chia, Liang, Gengchiau

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.72 MB

english, 2016

90

Anomalous tunneling characteristic of Weyl semimetals with tilted energy dispersion

Yesilyurt, Can, Siu, Zhuo Bin, Tan, Seng Ghee, Liang, Gengchiau, Yang, Shengyuan A., Jalil, Mansoor B. A.

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 2.26 MB

english, 2017

91

[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - A Surface Potential- and Physics- Based Compact Model for 2D Polycrystalline-MoS2FET with Resistive Switching Behavior in Neuromorphic Computing

Wang, Lingfei, Wang, Lin, Ang, Kah-Wee, Thean, Aaron Voon-Yew, Liang, Gengchiau

Year:

2018

File:

PDF, 2.69 MB

2018

92

Electrostatics of Ultimately Thin-Body Tunneling FET Using Graphene Nanoribbon

Lam, Kai-Tak, Yang, Yue, Samudra, G. S., Yeo, Yee-Chia, Liang, Gengchiau

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 477 KB

english, 2011

93

Shape Effects on the Performance of Si and Ge Nanowire Field-Effect Transistors Based on Size Dependent Bandstructure

Koong, Chee Shin, Samudra, Ganesh, Liang, Gengchiau

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 390 KB

english, 2010

94

Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

Yadav, Sachin, Tan, Kian Hua, Kumar, Annie, Goh, Kian Hui, Liang, Gengchiau, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 3.24 MB

english, 2017

95

Electric-field-induced three-terminal pMTJ switching in the absence of an external magnetic field

Deng, Jiefang, Fong, Xuanyao, Liang, Gengchiau

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 1.14 MB

english, 2018

96

Electrical Generation and Detection of Terahertz Signal Based on Spin-Wave Emission From Ferrimagnets

Zhu, Zhifeng, Cai, Kaiming, Deng, Jiefang, Miriyala, Venkata Pavan Kumar, Yang, Hyunsoo, Fong, Xuanyao, Liang, Gengchiau

Journal:

Physical Review Applied

Year:

2020

Language:

english

File:

PDF, 742 KB

english, 2020

97

Quantum transport simulations of graphene nanoribbon devices using Dirac equation calibrated with tight-bindingπ-bond model

Sai-Kong Chin, Kai-Tak Lam, Dawei Seah, Gengchiau Liang

Journal:

Nanoscale Research Letters

Year:

2012

Language:

english

File:

PDF, 439 KB

english, 2012

98

Conductance modulation in graphene nanoribbon under transverse asymmetric electric potential

Bala Kumar, S., Fujita, T., Liang, Gengchiau

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 2.62 MB

english, 2011

99

[IEEE 2013 IEEE International Nanoelectronics Conference (INEC) - Singapore, Singapore (2013.01.2-2013.01.4)] 2013 IEEE 5th International Nanoelectronics Conference (INEC) - Ultimate performance projection of ballistic III-V ultra-thin-body MOSFET

Guo, Yan, Lam, Kai-Tak, Yeo, Yee-Chia, Liang, Gengchiau

Year:

2013

File:

PDF, 306 KB

2013

100

Theoretical Study on Thermoelectric Properties of Ge Nanowires Based on Electronic Band Structures

Huang, Wen, Koong, Chee Shin, Liang, Gengchiau

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 280 KB

english, 2010

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