Joerg Appenzeller: search on Z-Library

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51

[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Nanowire electronics

Appenzeller, Joerg

Year:

2009

Language:

english

File:

PDF, 845 KB

english, 2009

52

junction

Low, Tony, Appenzeller, Joerg

Journal:

Physical Review B

Year:

2009

Language:

english

File:

PDF, 524 KB

english, 2009

53

[IEEE 2006 64th Device Research Conference - State College, PA, USA (2006.06.26-2006.06.28)] 2006 64th Device Research Conference - Seamless transition from the single-electron regime to field-effect transistor operation of nanoscale Schottky-barrier FETs

Indlekofer, Klaus, Knoch, Joachim, Appenzeller, Joerg

Year:

2006

Language:

english

File:

PDF, 1.98 MB

english, 2006

54

Tunability of Short-Channel Effects in MoS 2 Field-Effect Devices

Zhang, Feng, Appenzeller, Joerg

Journal:

Year:

2015

Language:

english

File:

PDF, 3.62 MB

english, 2015

55

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

Ilatikhameneh, Hesameddin, Tan, Yaohua, Novakovic, Bozidar, Klimeck, Gerhard, Rahman, Rajib, Appenzeller, Joerg

Journal:

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Year:

2015

Language:

english

File:

PDF, 4.08 MB

english, 2015

56

Scaling Theory of Electrically Doped 2D Transistors

Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Appenzeller, Joerg, Rahman, Rajib

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 928 KB

english, 2015

57

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Ge/Si Core/Shell Nanowire Structures for Tunneling Devices

Smith, Joshua T., Zhao, Yanjie, Razavieh, Ali, Yang, Chen, Appenzeller, Joerg

Year:

2010

Language:

english

File:

PDF, 761 KB

english, 2010

58

Dielectric Engineered Tunnel Field-Effect Transistor

Ilatikhameneh, Hesameddin, Ameen, Tarek, Klimeck, Gerhard, Appenzeller, Joerg, Rahman, Rajib

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 7.25 MB

english, 2015

59

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Electrically doped WTe2 tunnel transistors

Ilatikhameneh, Hesameddin, Rahman, Rajib, Appenzeller, Joerg, Klimeck, Gerhard

Year:

2015

Language:

english

File:

PDF, 1.95 MB

english, 2015

60

Probing the Dependence of Electron Transfer on Size and Coverage in Carbon Nanotube–Quantum Dot Heterostructures

Wang, Lei, Han, Jinkyu, Zhu, Yuqi, Zhou, Ruiping, Jaye, Cherno, Liu, Haiqing, Li, Zhuo-Qun, Taylor, Gordon T., Fischer, Daniel A., Appenzeller, Joerg, Wong, Stanislaus S.

Journal:

The Journal of Physical Chemistry C

Year:

2015

Language:

english

File:

PDF, 4.58 MB

english, 2015

61

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Penumatcha, Ashish V., Salazar, Ramon B., Appenzeller, Joerg

Journal:

Nature Communications

Year:

2015

Language:

english

File:

PDF, 914 KB

english, 2015

62

Cover Picture: Screening and interlayer coupling in multilayer MoS 2 (Phys. Status Solidi RRL 4/2013)

Das, Saptarshi, Appenzeller, Joerg

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2013

File:

PDF, 256 KB

2013

63

Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors

Shen, Tingting, Penumatcha, Ashish Verma, Appenzeller, Joerg

Journal:

Year:

2016

Language:

english

File:

PDF, 1.03 MB

english, 2016

64

From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling

Ilatikhameneh, Hesameddin, Salazar, Ramon B., Klimeck, Gerhard, Rahman, Rajib, Appenzeller, Joerg

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.63 MB

english, 2016

65

Design Rules for High Performance Tunnel Transistors from 2D Materials

Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Appenzeller, Joerg, Rahman, Rajib

Journal:

IEEE Journal of the Electron Devices Society

Year:

2016

Language:

english

File:

PDF, 6.22 MB

english, 2016

66

Screening and interlayer coupling in multilayer MoS 2

Das, Saptarshi, Appenzeller, Joerg

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2013

Language:

english

File:

PDF, 599 KB

english, 2013

67

Ligand-induced dependence of charge transfer in nanotube–quantum dot heterostructures

Wang, Lei, Han, Jinkyu, Sundahl, Bryan, Thornton, Scott, Zhu, Yuqi, Zhou, Ruiping, Jaye, Cherno, Liu, Haiqing, Li, Zhuo-Qun, Taylor, Gordon T., Fischer, Daniel A., Appenzeller, Joerg, Harrison, Robert

Journal:

Year:

2016

Language:

english

File:

PDF, 5.98 MB

english, 2016

68

[IEEE 2016 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2016.6.12-2016.6.13)] 2016 IEEE Silicon Nanoelectronics Workshop (SNW) - Transport in non-conventional FETs

Appenzeller, Joerg

Year:

2016

Language:

english

File:

PDF, 490 KB

english, 2016

69

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

Salazar, Ramon B., Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Appenzeller, Joerg

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 2.23 MB

english, 2015

70

Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe 2 Schottky Barrier Transistors

Prakash, Abhijith, Appenzeller, Joerg

Journal:

Year:

2017

Language:

english

File:

PDF, 2.33 MB

english, 2017

71

Utilizing Electrical Characteristics of Individual Nanotube Devices to Study the Charge Transfer between CdSe Quantum Dots and Double-Walled Nanotubes

Zhu, Yuqi, Zhou, Ruiping, Wang, Lei, Wong, Stanislaus S., Appenzeller, Joerg

Journal:

ACS Energy Letters

Year:

2017

Language:

english

File:

PDF, 3.48 MB

english, 2017

72

Correction to “Utilizing Electrical Characteristics of Individual Nanotube Devices to Study the Charge Transfer between CdSe Quantum Dots and Double-Walled Nanotubes”

Zhu, Yuqi, Zhou, Ruiping, Wang, Lei, Wong, Stanislaus S., Appenzeller, Joerg

Journal:

ACS Energy Letters

Year:

2017

File:

PDF, 168 KB

2017

73

Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Penumatcha, Ashish V., Salazar, Ramon B., Appenzeller, Joerg

Journal:

Nature Communications

Year:

2016

Language:

english

File:

PDF, 129 KB

english, 2016

74

[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - Dimensionality matters: Electronic transport in 2D layered materials

Appenzeller, Joerg

Year:

2017

Language:

english

File:

PDF, 107 KB

english, 2017

75

Exploration of channel width scaling and edge states in transition metal dichalcogenides

Zhang, Feng, Lee, Chia-Hui, Robinson, Joshua A., Appenzeller, Joerg

Journal:

Year:

2017

Language:

english

File:

PDF, 1.39 MB

english, 2017

76

Understanding contact gating in Schottky barrier transistors from 2D channels

Prakash, Abhijith, Ilatikhameneh, Hesameddin, Wu, Peng, Appenzeller, Joerg

Journal:

Scientific Reports

Year:

2017

Language:

english

File:

PDF, 2.45 MB

english, 2017

77

[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - BEOL compatible 2D layered materials as ultra-thin diffusion barriers for Cu interconnect technology

Lo, Chun-Li, Zhang, Shengjiao, Shen, Tingting, Appenzeller, Joerg, Chen, Zhihong

Year:

2017

Language:

english

File:

PDF, 285 KB

english, 2017

78

Vertical charge transport through transition metal dichalcogenides – a quantitative analysis

Zhu, Yuqi, Zhou, Ruiping, Zhang, Feng, Appenzeller, Joerg

Journal:

Year:

2017

Language:

english

File:

PDF, 1.65 MB

english, 2017

79

Spin-orbit torque based magnetization switching in Pt/Cu/[Co/Ni] 5 multilayer structures

Ostwal, Vaibhav, Penumatcha, Ashish, Hung, Yu-Ming, Kent, Andrew D., Appenzeller, Joerg

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.52 MB

english, 2017

80

[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - First demonstration of band-to-band tunneling in black phosphorus

Wu, Peng, Prakash, Abhijith, Appenzeller, Joerg

Year:

2017

Language:

english

File:

PDF, 1.41 MB

english, 2017

81

Characterization of Single Defects in Ultrascaled MoS 2 Field-Effect Transistors

Stampfer, Bernhard, Zhang, Feng, Illarionov, Yury Yuryevich, Knobloch, Theresia, Wu, Peng, Waltl, Michael, Grill, Alexander, Appenzeller, Joerg, Grasser, Tibor

Journal:

Year:

2018

Language:

english

File:

PDF, 1.56 MB

english, 2018

82

Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Chen, Chin-Yi, Ameen, Tarek A., Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Appenzeller, Joerg

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.89 MB

english, 2018

83

[IEEE 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2018.4.16-2018.4.19)] 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - From charge spin logic to probabilistic spin logic - An experimental approach

Appenzeller, Joerg

Year:

2018

File:

PDF, 42 KB

2018

84

Spin-torque devices with hard axis initialization as Stochastic Binary Neurons

Ostwal, Vaibhav, Debashis, Punyashloka, Faria, Rafatul, Chen, Zhihong, Appenzeller, Joerg

Journal:

Scientific Reports

Year:

2018

Language:

english

File:

PDF, 3.68 MB

english, 2018

85

Spin-orbit torque controlled MTJ with low thermal stability for tunable random number generation

Ostwal, Vaibhav, Appenzeller, Joerg

Journal:

IEEE Magnetics Letters

Year:

2019

Language:

english

File:

PDF, 1.15 MB

english, 2019

86

MoS2 for Enhanced Electrical Performance of Ultrathin Copper Films

Shen, Tingting, Valencia, Daniel, Wang, Qingxiao, Wang, KuangChung, Povolotskyi, Michael, Kim, Moon J., Klimeck, Gerhard, Chen, Zhihong, Appenzeller, Joerg

Journal:

ACS Applied Materials & Interfaces

Year:

2019

Language:

english

File:

PDF, 1.14 MB

english, 2019

87

Toward CMOS like devices from two-dimensional channel materials

Wu, Peng, Appenzeller, Joerg

Journal:

Year:

2019

Language:

english

File:

PDF, 4.42 MB

english, 2019

88

Efficient Spin‐Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr 2 Ge 2 Te 6

Ostwal, Vaibhav, Shen, Tingting, Appenzeller, Joerg

Journal:

Advanced Materials

Year:

2020

File:

PDF, 1.17 MB

2020

89

A Novel Compound Synapse Using Probabilistic SpinâOrbit-Torque Switching for MTJ-Based Deep Neural Networks

Ostwal, Vaibhav, Zand, Ramtin, DeMara, Ronald, Appenzeller, Joerg

Journal:

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Year:

2019

File:

PDF, 3.31 MB

2019

90

[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - About the interplay between contact and channel resistance in MoS 2 and its impact on mobility extraction

Zhou, Ruiping, Appenzeller, Joerg

Year:

2019

File:

PDF, 881 KB

2019

91

From Charge to Spin and Spin to Charge: Stochastic Magnets for Probabilistic Switching

Camsari, Kerem Y., Debashis, Punyashloka, Ostwal, Vaibhav, Pervaiz, Ahmed Zeeshan, Shen, Tingting, Chen, Zhihong, Datta, Supriyo, Appenzeller, Joerg

Journal:

Proceedings of the IEEE

Year:

2020

File:

PDF, 3.41 MB

2020

92

Demonstration of a pseudo-magnetization based simultaneous write and read operation in a Co60Fe20B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructure

Shen, Tingting, Ostwal, Vaibhav, Camsari, Kerem Y., Appenzeller, Joerg

Journal:

Scientific Reports

Year:

2020

File:

PDF, 1.45 MB

2020

93

Hardware implementation of Bayesian network building blocks with stochastic spintronic devices

Debashis, Punyashloka, Ostwal, Vaibhav, Faria, Rafatul, Datta, Supriyo, Appenzeller, Joerg, Chen, Zhihong

Journal:

Scientific Reports

Year:

2020

File:

PDF, 2.91 MB

2020