Levinshtein, M: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

51

Forward current-voltage characteristics of gallium arsenide power diodes at high current densities

L.A. Delimova, Yu.V. Zhilyaev, V.Yu. Kachorovsky, M.E. Levinshtein, V.V. Rossin

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 323 KB

english, 1988

52

Self-organizational tendencies of heteroepitaxial transition-metal silicide nanoislands

I. Goldfarb, E. Roizin, S. Manor, M. Levinshtein

Journal:

Materials Science in Semiconductor Processing

Year:

2009

Language:

english

File:

PDF, 583 KB

english, 2009

53

Two channels of non-radiative recombination in InGaN/GaN LEDs

N.S. Averkiev, A.E. Chernyakov, M.E. Levinshtein, P.V. Petrov, E.B. Yakimov, N.M. Shmidt, E.I. Shabunina

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 192 KB

english, 2009

54

Scanning tunneling microscopy of titanium silicide nanoislands

I. Goldfarb, S. Grossman, G. Cohen-Taguri, M. Levinshtein

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 415 KB

english, 2004

55

Steady-state and transient characteristics of 10 kV 4H-SiC diodes

Michael E. Levinshtein, Tigran T. Mnatsakanov, Pavel A. Ivanov, Ranbir Singh, John W. Palmour, Sergey N. Yurkov

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 380 KB

english, 2004

56

On the homogeneity of the turn-on process in high-voltage 4H–SiC thyristors

Michael E. Levinshtein, Pavel A. Ivanov, Anant K. Agarwal, John W. Palmour

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 299 KB

english, 2005

57

High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes

Michael E. Levinshtein, Pavel A. Ivanov, Mykola S. Boltovets, Valentyn A. Krivutsa, John W. Palmour, Mrinal K. Das, Brett A. Hull

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 352 KB

english, 2005

58

dV/dt effect in high-voltage (1.5 kV) 4H–SiC thyristors

Sergey N. Yurkov, Tigran T. Mnatsakanov, Michael E. Levinshtein, Pavel A. Ivanov, Anant K. Agarwal, John W. Palmour

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 170 KB

english, 2005

59

Real-space identification of the CZT(1 1 0) surface atomic structure by scanning tunneling microscopy

G. Cohen-Taguri, M. Levinshtein, A. Ruzin, I. Goldfarb

Journal:

Surface Science

Year:

2008

Language:

english

File:

PDF, 2.66 MB

english, 2008

60

Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor

Pavel A Ivanov, Michael E Levinshtein, Sergey L Rumyantsev, Anant K Agarwal, John W Palmour

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 141 KB

english, 2000

61

Temperature dependence of turn-on processes in 4H–SiC thyristors

Michael E Levinshtein, Tigran T Mnatsakanov, Pavel A Ivanov, Anant K Agarwal, John W Palmour, Sergey L Rumyantsev, Aleksey G Tandoev, Sergey N Yurkov

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

62

Current rise time constants in switch-on process of SiC thyristors

Tigran T Mnatsakanov, Michael E Levinshtein, Sergey N Yurkov, Pavel A Ivanov, Aleksey G Tandoev, John W Palmour, Anant K Agarwal

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 108 KB

english, 2002

63

Turn-off operation of a 2.6 kV 4H-SiC gate turn-off thyristor in MOS-gate mode

Michael E Levinshtein, Tigran T Mnatsakanov, Sergey N Yurkov, Pavel A Ivanov, Aleksey G Tandoev, Anant K Agarwal, John W Palmour

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 274 KB

english, 2002

64

Carrier mobility model for GaN

Tigran T Mnatsakanov, Michael E Levinshtein, Lubov I Pomortseva, Sergey N Yurkov, Grigory S Simin, M Asif Khan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 136 KB

english, 2003

65

The critical charge density in high voltage 4H-SiC thyristors

Michael E. Levinshtein, Pavel A. Ivanov, Tigran T. Mnatsakanov, Sergey N. Yurkov, Anant K. Agarwal, John W. Palmour

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 233 KB

english, 2003

66

The critical charge concept for 4H-SiC-based thyristors

Tigran T. Mnatsakanov, Sergey N. Yurkov, Michael E. Levinshtein, Aleksey G. Tandoev, Anant K. Agarwal, John W. Palmour

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 184 KB

english, 2003

67

Magnetic field influence on the gunn effect (II)

M. E. Levinshtein, T. V. Lvova, D. N. Nasledov, M. S. Shur

Journal:

physica status solidi (a)

Year:

1970

Language:

english

File:

PDF, 563 KB

english, 1970

68

Magnetic Field Influence on the Low-Frequency Oscillations of Gunn Diodes

Yu. A. Goldberg, M. E. Levinshtein, D. N. Nasledov

Journal:

physica status solidi (b)

Year:

1968

Language:

english

File:

PDF, 114 KB

english, 1968

69

Magnetic Field Influence on the Gunn Effect

M. E. Levinshtein, D. N. Nasledov, M. S. Shur

Journal:

physica status solidi (b)

Year:

1969

Language:

english

File:

PDF, 408 KB

english, 1969

70

Anode domain transient processes in supercritical Gunn diodes

O.A. Kireev, M.E. Levinshtein, S.L. Rumjantsev

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 671 KB

english, 1984

71

High power 4H–SiC pin diodes (10 kV class) with record high carrier lifetime

Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Mrinal K. Das, Brett A. Hull

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 148 KB

english, 2006

72

Electrical properties of the conducting polydiacetylene poly-1,1,6,6-tetraphenylhexadiinediamine

E. G. Guk, M. E. Levinshtein, V. A. Marikhin, L. P. Myasnikova, S. L. Rumyantsev

Journal:

Physics of the Solid State

Year:

1997

Language:

english

File:

PDF, 243 KB

english, 1997

73

Changes in the optical properties of conducting polydiacetylene THD brought on by doping

E. G. Guk, M. E. Levinshtein, V. A. Marikhin, L. P. Myasnikova

Journal:

Physics of the Solid State

Year:

1998

Language:

english

File:

PDF, 87 KB

english, 1998

74

1/fnoise in strongly dopedn-type GaAs under band-band illumination conditions

N. V. D’yakonova, M. E. Levinshtein, S. L. Rumyantsev, F. Pascal

Journal:

Year:

1997

Language:

english

File:

PDF, 107 KB

english, 1997

75

Low-frequency noise inn-GaN

N. V. D’yakonova, M. E. Levinshtein, S. Contreras, W. Knap, B. Beaumont, P. Gibart

Journal:

Year:

1998

Language:

english

File:

PDF, 97 KB

english, 1998

76

Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure

N. M. Shmidt, M. E. Levinshtein, W. V. Lundin, A. I. Besyul’kin, P. S. Kop’ev, S. L. Rumyantsev, N. Pala, M. S. Shur

Journal:

Year:

2004

Language:

english

File:

PDF, 49 KB

english, 2004

77

Specific features of dynamic injection and base layer modulation processes in powern+-p-p+diodes

T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, S. N. Yurkov

Journal:

Year:

2007

Language:

english

File:

PDF, 232 KB

english, 2007

78

Effect of Auger recombination on the thermal stability of high-voltage high-power semiconductor diodes

T. T. Mnatsakanov, M. E. Levinshteĭn, A. S. Freĭdlin

Journal:

Year:

2008

Language:

english

File:

PDF, 279 KB

english, 2008

79

Modulation waves of charge carriers inn- andp-type semiconductor layers

T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, S. N. Yurkov

Journal:

Year:

2011

Language:

english

File:

PDF, 217 KB

english, 2011

80

Low-frequency noise in monodisperse platinum nanostructures near the percolation threshold

S. L. Rumyantsev, M. E. Levinshteĭn, S. A. Gurevich, V. M. Kozhevin, D. A. Yavsin, M. S. Shur, N. Pala, A. Khanna

Journal:

Physics of the Solid State

Year:

2006

Language:

english

File:

PDF, 277 KB

english, 2006

81

Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current

N. S. Averkiev, M. E. Levinshtein, P. V. Petrov, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt

Journal:

Technical Physics Letters

Year:

2009

Language:

english

File:

PDF, 156 KB

english, 2009

82

Features of degradation in high-voltage 4H-SiCp-i-ndiodes under the action of forward current pulses

M. E. Levinshtein, P. A. Ivanov, J. W. Palmour, A. K. Agarwal, M. K. Das

Journal:

Technical Physics Letters

Year:

2011

Language:

english

File:

PDF, 148 KB

english, 2011

83

Forward-current-generated donor centers in high-voltage 4H-SiC basedp-i-ndiodes

A. M. Ivanov, M. E. Levinshtein, J. W. Palmour, A. K. Agarwal, M. K. Das

Journal:

Technical Physics Letters

Year:

2011

Language:

english

File:

PDF, 149 KB

english, 2011

84

Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride

Levinshtein, M.E., Rumyantsev, S.L., Shur, M.S., Gaska, R., Khan, M.A.

Journal:

IEE Proceedings - Circuits Devices and Systems

Year:

2002

Language:

english

File:

PDF, 947 KB

english, 2002

85

Turn-on process in 4H-SiC thyristors

Levinshtein, M.E., Palmour, J.W., Rumyanetsev, S.L., Singh, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 96 KB

english, 1997

86

The critical charge density of 4H-SiC thyristors

Levinshtein, M.E., Palmour, J.W., Rumyanetsev, S.L., Singh, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 304 KB

english, 1998

87

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

Dyakonova, N.V., Ivanov, P.A., Kozlov, V.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L., Singh, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 253 KB

english, 1999

88

“Paradoxes” of carrier lifetime measurements in high-voltage SiC diodes

Levinshtein, M.E., Mnatsakanov, T.T., Ivanov, P., Palmour, J.W., Rumyantsev, S.L., Singh, R., Yurkov, S.N.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 184 KB

english, 2001

89

On the transport equations in popular commercial device simulators

Levinshtein, M.E., Mnatsakanov, T.T.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 165 KB

english, 2002

90

Temperature dependence of the current gain in power 4H-SiC NPN BJTs

Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Krishnaswami, S., Palmour, J.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 164 KB

english, 2006

91

Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs

A. L. Zakheim, M. E. Levinshtein, V. P. Petrov, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt

Journal:

Year:

2012

Language:

english

File:

PDF, 218 KB

english, 2012

92

[IEEE 2012 Canadian Conference on Computer and Robot Vision (CRV) - Toronto, Ontario, Canada (2012.05.28-2012.05.30)] 2012 Ninth Conference on Computer and Robot Vision - Learning Categorical Shape from Captioned Images

Lee, Tom S.H., Fidler, Sanja, Levinshtein, Alex, Dickinson, Sven

Year:

2012

Language:

english

File:

PDF, 1.06 MB

english, 2012

93

`Classical' current-voltage characteristics of 4H-SiC p + -n junction diodes

Ivanov, P A, Levinshtein, M E, Palmour, J W, Rumyantsev, S L, Singh, R

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 91 KB

english, 2000

94

[IEEE 20000 IEEE/Cornell Conference on High Performance Devices - Ithaca, NY, USA (7-9 Aug. 2000)] Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) - Low frequency noise in GaN-based transistors

Rumyantsev, S.L., Pala, N., Shur, M.S., Levinshtein, M.E., Gaska, R., Hu, X., Yang, J., Simin, G., Khan, M.A.

Year:

2000

Language:

english

File:

PDF, 470 KB

english, 2000

95

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Levinshtein, M. E., Rumyantsev, S. L., Tauk, R., Boubanga, S., Dyakonova, N., Knap, W., Shchepetov, A., Bollaert, S., Rollens, Y., Shur, M. S.

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 649 KB

english, 2007

96

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

Rumyantsev, S. L., Deng, Y., Borovitskaya, E., Dmitriev, A., Knap, W., Pala, N., Shur, M. S., Levinshtein, M. E., Khan, M. Asif, Simin, G., Yang, J., Hu, X.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 323 KB

english, 2002

97

SPIE Proceedings [SPIE SPIE's First International Symposium on Fluctuations and Noise - Santa Fe, NM (Sunday 1 June 2003)] Noise in Devices and Circuits - Generation-recombination noise in GaN and GaN-based devices

Pala, Nezih, Rumyantsev, Sergey L., Shur, Michael S., Levinshtein, Michael E., Khan, M. Asif, Simin, Grigory S., Gaska, Remis, Deen, M. Jamal, Celik-Butler, Zeynep, Levinshtein, Michael E.

Year:

2003

Language:

english

File:

PDF, 269 KB

english, 2003

98

MATERIALS PROPERTIES OF NITRIDES: SUMMARY

RUMYANTSEV, SERGEY L., SHUR, MICHAEL. S., LEVINSHTEIN, MICHAEL E.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 1.60 MB

english, 2004

99

Optical triggering of 12 kV, 100 A 4H-SiC thyristors

Rumyantsev, S L, Levinshtein, M E, Shur, M S, Saxena, T, Zhang, Q J, Agarwal, A K, Palmour, J W

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 719 KB

english, 2012

100

High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor

Rumyantsev, S L, Levinshtein, M E, Shur, M S, Cheng, L, Agarwal, A K, Palmour, J W

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 321 KB

english, 2013