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1

Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition Metals

Kazakevich, L.A., Kuznetsov, V.I., Lugakov, P.F., Salmanov, A.R.

Journal:

Defect and Diffusion Forum

Year:

1993

File:

PDF, 377 KB

1993

2

Accumulation kinetics and nature of radiation defects in p-type silicon

P.F. Lugakov, T.A. Lukashevich

Journal:

Radiation Physics and Chemistry (1977)

Year:

1977

Language:

english

File:

PDF, 531 KB

english, 1977

3

Study of radiation defect clusters, their structure and properties in, proton-irradiated silicon

V. I. Kuznetsov, P. F. Lugakov

Journal:

physica status solidi (a)

Year:

1982

Language:

english

File:

PDF, 610 KB

english, 1982

4

The effect of dislocations on the formation of radiation defects in silicon

L. A. Kazakevich, P. F. Lugakov

Journal:

physica status solidi (a)

Year:

1982

Language:

english

File:

PDF, 606 KB

english, 1982

5

The Effect of Dislocations on the Radiation Defect Annealing Processes in Silicon

L. A. Kazakevich, P. F. Lugakov

Journal:

physica status solidi (a)

Year:

1982

Language:

english

File:

PDF, 629 KB

english, 1982

6

Nature of the Defect Determining the Fermi Level Stabilization in Irradiated Silicon

P. F. Lugakov, T. A. Lukashevich, V. V. Shusha

Journal:

physica status solidi (a)

Year:

1982

Language:

english

File:

PDF, 561 KB

english, 1982

7

Parameters of Defect Clusters in Irradiated Silicon and a Method for Their Determining

V. I. Kuznetsov, P. F. Lugakov

Journal:

physica status solidi (a)

Year:

1983

Language:

english

File:

PDF, 526 KB

english, 1983

8

The Effect of Dislocations on the Interaction Processes of Point and Group Radiation Defects in Silicon

L. A. Kazakevich, P. F. Lugakov

Journal:

physica status solidi (a)

Year:

1983

Language:

english

File:

PDF, 323 KB

english, 1983

9

The effect of dislocations on the charge-carrier recombination processes in irradiated silicon

L. A. Kazakevich, P. P. Lugakov, I. M. Filippov

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 485 KB

english, 1984

10

Interaction of radiation defects with the surface of silicon

V. I. Kuznetsov, P. F. Lugakov, A. V. Tsikunov

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 484 KB

english, 1984

11

Charge-carrier recombination in silicon irradiated with γ-rays of different energies

I. I. Kolkovskii, P. F. Lugakov, V. V. Shusha

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 570 KB

english, 1984

12

Efficiency of radiation defect formation in silicon at various intensities of electron and γ-ray irradiation

P. F. Lugakov, V. V. Lukyanitsa

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 560 KB

english, 1984

13

Formation and Parameters of Boron-Divacancy Complexes in Irradiated p-Si

P. F. Lugakov, T. A. Lukashevich

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 287 KB

english, 1984

14

A model of nonequilibrium charge-carrier recombination in semiconductors containing nonuniformities

P. F. Lugakov, V. V. Shusha

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 245 KB

english, 1984

15

The Effect of Dislocations on the Activation Energy of Radiation Defect Thermal Ionization

L. A. Kazakevich, V. I. Kuznetsov, P. F. Lugakov

Journal:

physica status solidi (a)

Year:

1986

Language:

english

File:

PDF, 339 KB

english, 1986

16

The Charge Carrier Recombination Processes in Dislocated Silicon

I. M. Filippov, L. A. Kazakevich, P. F. Lugakov, V. V. Shusha

Journal:

physica status solidi (a)

Year:

1986

Language:

english

File:

PDF, 326 KB

english, 1986

17

Clusters of radiation defects in silicon with dislocations

L. A. Kazakevich, V. I. Kuznetsov, P. F. Lugakov

Journal:

physica status solidi (a)

Year:

1988

Language:

english

File:

PDF, 294 KB

english, 1988

18

Influence of irradiation temperature on radiation defect accumulation in silicon

V. I. Kuznetsov, P. F. Lugakov, V. V. Lukyanitsa

Journal:

physica status solidi (a)

Year:

1988

Language:

english

File:

PDF, 467 KB

english, 1988

19

Peculiarities of radiation defect accumulation under high-flux γ-ray and electron irradiation of silicon

P. F. Lugakov, T. A. Lukashevich

Journal:

physica status solidi (a)

Year:

1988

Language:

english

File:

PDF, 414 KB

english, 1988

20

The role of dislocations during charge-carrier recombination at radiation defects in p-Si

L. A. Kazakevich, P. F. Lugakov, I. M. Filippov

Journal:

physica status solidi (a)

Year:

1989

Language:

english

File:

PDF, 577 KB

english, 1989

21

The effect of irradiation and heat treatment on the dislocation recombination activity in n-type silicon

I. M. Filippov, L. A. Kazakevich, P. F. Lugakov

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 420 KB

english, 1990

22

Formation of thermal donors during annealing of radiation defects in float-zone dislocation-free n-Si

I. I. Kolkovskii, P. F. Lugakov, V. V. Lukyanitsa, V. V. Shusha

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 299 KB

english, 1990

23

The effect of grown-in structural imperfections on the radiation defect formation and annealing in dislocation-free silicon

I. I. Kolkovskii, P. F. Lugakov, V. V. Shusha

Journal:

physica status solidi (a)

Year:

1991

Language:

english

File:

PDF, 472 KB

english, 1991

24

Study of Rearrangements of Intrinsic Defects at Annealing of Proton-Irradiated Silicon

V. I. Kuznetsov, P. F. Lugakov

Journal:

physica status solidi (b)

Year:

1982

Language:

english

File:

PDF, 456 KB

english, 1982

25

Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types

L. A. Kazakevich, P. F. Lugakov

Journal:

Year:

1998

Language:

english

File:

PDF, 68 KB

english, 1998

26

Effects of germanium on radiation-defect formation and annealing in nuclear-doped silicon

N. G. Kolin, P. F. Lugakov, V. V. Luk'yanitsa, A. A. Stuk

Journal:

Russian Physics Journal

Year:

1990

Language:

english

File:

PDF, 350 KB

english, 1990

27

Nature and parameters of radiation defects in dislocated silicon

Kazakevich, L. A., Lugakov, P. F.

Journal:

Radiation Effects

Year:

1985

Language:

english

File:

PDF, 365 KB

english, 1985

28

The electrical activity of tetravacancy complexes in high-energy proton-irradiated silicon

Kuznetsov, V. I., Lugakov, P. F.

Journal:

Radiation Effects

Year:

1984

Language:

english

File:

PDF, 410 KB

english, 1984

29

The role of the impurity atmosphere of dislocations during radiation defect accumulation in silicon

Kazakevich, L. A., Lugakov, P. F., Filippov, I. M.

Journal:

Radiation Effects

Year:

1984

Language:

english

File:

PDF, 386 KB

english, 1984

30

Peculiarities of charge carrier recombination at radiation defects in dislocated silicon

Kazakevich, L. A., Lugakov, P. F., Filippov, I. M., Shusha, V. V.

Journal:

Radiation Effects

Year:

1985

Language:

english

File:

PDF, 349 KB

english, 1985

31

Parameters of radiation defect clusters in silicon irradiated by high-energy γ-rays

Kuznetsov, V. I., Lugakov, P. F., Shusha, V. V.

Journal:

Radiation Effects

Year:

1985

Language:

english

File:

PDF, 326 KB

english, 1985

32

Statistics of charge carrier recombination at radiation defect clusters in silicon

Lugakov, P. F., Shusha, V. V.

Journal:

Radiation Effects

Year:

1982

Language:

english

File:

PDF, 494 KB

english, 1982

33

On the nature of the radiation defects with level E c –0.22 eV in n-type silicon

Kazakevich, L. A., Kuznetsov, V. I., Lugakov, P. F.

Journal:

Radiation Effects

Year:

1985

Language:

english

File:

PDF, 380 KB

english, 1985

34

Radiation defect clusters in electron-irradiated silicon

Lugakov, P. F., Filippov, I. M.

Journal:

Radiation Effects

Year:

1985

Language:

english

File:

PDF, 488 KB

english, 1985

35

The efficiency of direct annihilation of resistivity silicon primary radiation defects in high-resistivity silicon

Lugakov, P. F., Lukashevich, T. A.

Journal:

Radiation Effects and Defects in Solids

Year:

1989

Language:

english

File:

PDF, 276 KB

english, 1989

36

Kinetics of accumulation of vacancy complexes in dislocated silicon under 60 Co γ-ray irradiation

Kazakevich, L. A., Lugakov, P. F.

Journal:

Radiation Effects

Year:

1989

Language:

english

File:

PDF, 395 KB

english, 1989

37

The rearrangement processes of radiation defects at annealing of dislocated silicon

Kazakevich, L. A., Lugakov, P. F.

Journal:

Radiation Effects

Year:

1985

Language:

english

File:

PDF, 329 KB

english, 1985

38

Phosphorus-divacancy complexes in irradiated silicon

Kazakevich, L. A., Lugakov, P. F., Lukyanitsa, V. V., Filippov, I. M.

Journal:

Radiation Effects

Year:

1988

Language:

english

File:

PDF, 449 KB

english, 1988

39

Nature and parameters of radiation defects in epitaxial layers of silicon

Kuznetsov, V. I., Lugakov, P. F., Tsikunov, A. V.

Journal:

Radiation Effects

Year:

1987

Language:

english

File:

PDF, 514 KB

english, 1987

40

Thermal Donor Formation Affected by Strain Fields Induced by Imperfections of Silicon Crystal Lattice

Kolkovskii, I.I., Lugakov, P.F., Lukyanitsa, V.V., Tsikunov, A.V.

Journal:

Defect and Diffusion Forum

Year:

1993

File:

PDF, 419 KB

1993

41

Peculiarities of divacancy annealing in radiation defect clusters

Kuznetsov, V. I., Lugakov, P. F., Shusha, V. V.

Journal:

Radiation Effects

Year:

1984

Language:

english

File:

PDF, 405 KB

english, 1984

42

Interaction of radiation defects of different nature in n-Si at irradiation and annealing

Lugakov, P. F., Lukjanitsa, V. V.

Journal:

Radiation Effects

Year:

1984

Language:

english

File:

PDF, 532 KB

english, 1984