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1

Surface affinity role in graphoepitaxy of lamellar block copolymers

Claveau, Guillaume, Quemere, Patrick, Argoud, Maxime, Hazart, Jerome, Barros, Patricia Pimenta, Sarrazin, Aurelien, Posseme, Nicolas, Tiron, Raluca, Chevalier, Xavier, Nicolet, Celia, Navarro, Christo

Journal:

Journal of Micro/Nanolithography MEMS and MOEMS

Year:

2016

Language:

english

File:

PDF, 6.38 MB

english, 2016

2

Patterning of narrow porous SiOCH trenches using a TiN hard mask

M. Darnon, T. Chevolleau, D. Eon, R. Bouyssou, B. Pelissier, L. Vallier, O. Joubert, N. Posseme, T. David, F. Bailly, J. Torres

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 1008 KB

english, 2008

3

[IEEE Proceedings of the IEEE 2006 International Interconnect Technology Conference - Burlingame, CA (2006.06.5-2006.06.7)] 2006 International Interconnect Technology Conference - New etch challenges for the 65-nm technology node Low-k integration using An enhanced Trench First Hard Mask architecture

Posseme, N., Maurice, C., Brun, Ph., Oilier, E., Guillermet, M., Verove, C., Berger, T., Fox, T., Hinsinger, O.

Year:

2006

Language:

english

File:

PDF, 255 KB

english, 2006

4

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California, USA (Sunday 23 February 2014)] Advanced Etch Technology for Nanopatterning III - Plasma etching and integration challenges using alternative patterning techniques for 11nm node and beyond

Oehrlein, Gottlieb S., Lin, Qinghuang, Zhang, Ying, Barnola, S., Pimenta Barros, P., Arvet, C., Vizioz, C., Posseme, N., Gharbi, A., Argoud, M., Tiron, R., Pradelles, J., Desvoivres, L., Barraud, S.

Year:

2014

Language:

english

File:

PDF, 2.11 MB

english, 2014

5

Impact of patterning and ashing on electrical properties and reliability of interconnects in a porous SiOCH ultra low-k dielectric material

M. Aimadeddine, V. Arnal, A. Farcy, C. Guedj, T. Chevolleau, N. Possémé, T. David, M. Assous, O. Louveau, F. Volpi, J. Torres

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 339 KB

english, 2005

6

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

Faynot, O., Andrieu, F., Weber, O., Fenouillet-Beranger, C., Perreau, P., Mazurier, J., Benoist, T., Rozeau, O., Poiroux, T., Vinet, M., Grenouillet, L., Noel, J-P., Posseme, N., Barnola, S., Martin,

Year:

2010

Language:

english

File:

PDF, 655 KB

english, 2010

7

Identification de nouveaux marqueurs moléculaires à valeur pronostique des adénocarcinomes à cellules claires du rein

Cros, J., Letierce, A., Posseme, K., Benoit, G., Guettier, C., Ferlicot, S.

Journal:

Annales de Pathologie

Year:

2011

Language:

french

File:

PDF, 43 KB

french, 2011

8

[IEEE 2010 IEEE International Interconnect Technology Conference - IITC - Burlingame, CA, USA (2010.06.6-2010.06.9)] 2010 IEEE International Interconnect Technology Conference - Etching process scalability and challenges for ULK materials

Chevolleau, T., Posseme, N., David, T., Bouyssou, R., Ducote, J., Bailly, F., Darnon, M., Kodadi, M. El, Besacier, M., Licitra, C., Guillermet, M., Ostrovsky, A., Verove, C., Joubert, O.

Year:

2010

Language:

english

File:

PDF, 1.63 MB

english, 2010

9

Goniotelemetry system

Posseme, Gilles

Journal:

The Journal of the Acoustical Society of America

Year:

1987

Language:

english

File:

PDF, 115 KB

english, 1987

10

Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy

Darnon, M., Chevolleau, T., David, T., Ducote, J., Posseme, N., Bouyssou, R., Bailly, F., Perret, D., Joubert, O.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2010

Language:

english

File:

PDF, 993 KB

english, 2010

11

Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions

Posseme, N., Bouyssou, R., Chevolleau, T., David, T., Arnal, V., Darnon, M., Brun, Ph., Verove, C., Joubert, O.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 772 KB

english, 2011

12

[IEEE 2011 Materials for Advanced Metallization (MAM) - Dresden, Germany (2011.05.8-2011.05.12)] 2011 IEEE International Interconnect Technology Conference - Impact of ambient atmosphere on plasma-damaged porous low-k characterization

Darnon, M., Chevolleau, T., David, T., Posseme, N., Bouyssou, R., Hurand, R., Joubert, O., Licitra, C., Rochat, N., Bailly, F., Verove, C.

Year:

2011

Language:

english

File:

PDF, 241 KB

english, 2011

13

Roughening of porous SiCOH materials in fluorocarbon plasmas

Bailly, F., David, T., Chevolleau, T., Darnon, M., Posseme, N., Bouyssou, R., Ducote, J., Joubert, O., Cardinaud, C.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 2.02 MB

english, 2010

14

[IEEE Proceedings of the IEEE 2006 International Interconnect Technology Conference - Burlingame, CA (2006.06.5-2006.06.7)] 2006 International Interconnect Technology Conference - Effect of CH4 plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes

Aimadeddine, M., Arnal, V., Roy, R., Farcy, A., David, T., Chevolleau, T., Posseme, N., Vitiello, J., Chapelon, L.L., Guedj, C., Brechet, Y., Volpi, F., Torres, J.

Year:

2006

Language:

english

File:

PDF, 671 KB

english, 2006

15

Plasma Etching Processes for Interconnect Realization in VLSI || Interaction Plasma/Dielectric

Posseme, Nicolas

Year:

2015

Language:

english

File:

PDF, 2.63 MB

english, 2015

16

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California (Sunday 12 February 2012)] Advanced Etch Technology for Nanopatterning - Towards new plasma technologies for 22nm gate etch processes and beyond

Joubert, O., Darnon, M., Cunge, G., Pargon, E., Thibault, D., Petit-Etienne, C., Vallier, L., Posseme, N., Bodart, P., Azarnouche, L., Blanc, R., Haas, M., Brihoum, M., Banna, S., Lill, T., Zhang, Yin

Year:

2012

Language:

english

File:

PDF, 392 KB

english, 2012

17

Plasma Etching Processes for Interconnect Realization in VLSI || Porous SiOCH Film Integration

Posseme, Nicolas

Year:

2015

Language:

english

File:

PDF, 6.82 MB

english, 2015

18

Etching of porous SiOCH materials in fluorocarbon-based plasmas

N. Posseme, T. Chevolleau, O. Joubert, L. Vallier, N. Rochat

Year:

2004

Language:

english

File:

PDF, 838 KB

english, 2004

19

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

N. Posseme, T. Chevolleau, T. David, M. Darnon, O. Louveau, O. Joubert

Year:

2007

Language:

english

File:

PDF, 1.12 MB

english, 2007

20

Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials

M. Darnon, T. Chevolleau, T. David, N. Posseme, J. Ducote, C. Licitra, L. Vallier, O. Joubert, J. Torres

Year:

2008

Language:

english

File:

PDF, 1.10 MB

english, 2008

21

Analyses of chamber wall coatings during the patterning of ultralow-k materials with a metal hard mask: Consequences on cleaning strategies

T. Chevolleau, M. Darnon, T. David, N. Posseme, J. Torres, O. Joubert

Year:

2007

Language:

english

File:

PDF, 1.02 MB

english, 2007

22

L'invention politique de l'environnement || Archives africaines des partis politiques et syndicats français

Gwénola Possémé-Rageau

Journal:

Vingtième Siècle Revue d histoire

Year:

2012

Language:

french

File:

PDF, 334 KB

french, 2012

23

Characterization and Development of High Dose Implanted Resist Stripping Processes

Croisy, Marion, Jenny, Cécile, Richard, Claire, Guiheux, Denis, Campo, Alain, Pargon, Erwine, Possémé, Nicolas

Journal:

Solid State Phenomena

Year:

2016

Language:

english

File:

PDF, 4.13 MB

english, 2016

24

Characterization of photoresist films exposed to high-dose implantation conditions

Croisy, Marion, Pargon, Erwine, Jenny, Cécile, Richard, Claire, Guiheux, Denis, Mariolle, Denis, Poulain, Christophe, Campo, Alain, Possémé, Nicolas

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2018

Language:

english

File:

PDF, 6.94 MB

english, 2018

25

Aspartate is a limiting metabolite for cancer cell proliferation under hypoxia and in tumours

Garcia-Bermudez, Javier, Baudrier, Lou, La, Konnor, Zhu, Xiphias Ge, Fidelin, Justine, Sviderskiy, Vladislav O., Papagiannakopoulos, Thales, Molina, Henrik, Snuderl, Matija, Lewis, Caroline A., Possem

Journal:

Nature Cell Biology

Year:

2018

Language:

english

File:

PDF, 1.46 MB

english, 2018

26

Thin layer etching of low-k SiCO spacer using hydrogen ion implantation followed by hydrofluoric acid

Posseme, Nicolas, Garcia-Barros, Maxime, Leverd, François, Benoit, Daniel, Pollet, Olivier, Audoit, Guillaume, Guedj, Cyril, Jannaud, Audrey, Barnola, S.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2018

Language:

english

File:

PDF, 1.82 MB

english, 2018

27

Plasma Etching Processes for Interconnect Realization in VLSI || Introduction

Posseme, Nicolas

Year:

2015

File:

PDF, 1.13 MB

2015

28

Isotropic dry etching of Si selectively to Si 0.7 Ge 0.3 for CMOS sub-10ânm applications

Rachidi, Sana, Campo, Alain, Loup, Virginie, Vizioz, Christian, Hartmann, Jean-Michel, Barnola, SÃ©bastien, Posseme, Nicolas

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2020

Language:

english

File:

PDF, 4.23 MB

english, 2020

29

ChemInform Abstract: N-Benzylpolyamines as Vectors of Boron and Fluorine for Cancer Therapy and Imaging: Synthesis and Biological Evaluation.

Benedicte Martin, Francoise Posseme, Caroline Le Barbier, Francois Carreaux, Bertrand Carboni, Nikolaus Seiler, Jacques-Philippe Moulinoux, Jean-Guy Delcros

Journal:

Year:

2002

File:

PDF, 27 KB

2002

30

Efficiency of reducing and oxidizing ash plasmas in preventing metallic barrier diffusion into porous SiOCH

N. Posseme, T. Chevolleau, T. David, M. Darnon, J.P. Barnes, O. Louveau, C. Licitra, D. Jalabert, H. Feldis, M. Fayolle, O. Joubert

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 997 KB

english, 2008

31

(Z)-1,4-Diamino-2-butene as a vector of boron, fluorine, or iodine for cancer therapy and imaging: synthesis and biological evaluation

Bénédicte Martin, Françoise Possémé, Caroline Le Barbier, François Carreaux, Bertrand Carboni, Nikolaus Seiler, Jacques-Philippe Moulinoux, Jean-Guy Delcros

Journal:

Bioorganic & Medicinal Chemistry

Year:

2002

Language:

english

File:

PDF, 185 KB

english, 2002

32

Low-k Integration Using Metallic Hard Masks

Joubert, O., Possémé, Nicolas, Chevolleau, Thierry, David, Thibaut, Darnon, M.

Journal:

Solid State Phenomena

Year:

2012

Language:

english

File:

PDF, 266 KB

english, 2012

33

[4+3] versus [4+2] Mechanisms in the Dimerization of 2-Boryl-1,3-butadienes. A Theoretical and Experimental Study

Carreaux, François, Possémé, Françoise, Carboni, Bertrand, Arrieta, Ana, Lecea, Begoña, Cossío, Fernando P.

Journal:

Journal of Organic Chemistry

Year:

2002

Language:

english

File:

PDF, 384 KB

english, 2002

34

( E )-α-Substituted γ-Alkoxyallylboronic Esters as New Reagents: Synthesis and Reactivity toward Aldehydes

Possémé,, Françoise, Deligny, Michael, Carreaux, François, Carboni, Bertrand

Journal:

Journal of Organic Chemistry

Year:

2007

Language:

english

File:

PDF, 117 KB

english, 2007

35

Books on histology

Cros, J., Letierce, A., Posseme, K., Benoit, G., Guettier, C., Ferlicot, S.

Journal:

International Journal of Orthodontia

Year:

1917

Language:

english

File:

PDF, 82 KB

english, 1917

36

N -Benzylpolyamines as Vectors of Boron and Fluorine for Cancer Therapy and Imaging: Synthesis and Biological Evaluation

Martin, Bénédicte, Possémé, Françoise, Le Barbier, Caroline, Carreaux, François, Carboni, Bertrand, Seiler, Nikolaus, Moulinoux, Jacques-Philippe, Delcros, Jean-Guy

Journal:

Journal of Medicinal Chemistry

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

37

[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - Enabling the use of ion implantation for ultra-thin FDSOI n-MOSFETs

Vinet, M., Kumar, A., Grenouillet, L., Ponoth, S., Posseme, N., Destefanis, V., Mehta, S., Loubet, N., Le Tiec, Y., Monsieur, F., Liu, Q., Daval, N., Doris, B., Faynot, O., Poiroux, T.

Year:

2012

Language:

english

File:

PDF, 384 KB

english, 2012

38

[IEEE 2011 IEEE International SOI Conference - Tempe, AZ, USA (2011.10.3-2011.10.6)] IEEE 2011 International SOI Conference - Ellipsometry measurements on ultrathin silicon on insulator films

Grenouillet, L., Le Tiec, Y., Vu, Q. B., Vinet, M., LaRose, J. D., Kamineni, V. K., Posseme, N., Fullam, J., Doris, B. B., Diebold, A. C.

Year:

2011

Language:

english

File:

PDF, 99 KB

english, 2011

39

[IEEE 2011 IEEE International SOI Conference - Tempe, AZ, USA (2011.10.3-2011.10.6)] IEEE 2011 International SOI Conference - Implant approaches and challenges for 20nm node and beyond ETSOI devices

Ponoth, S., Vinet, M., Grenouillet, L., Kumar, A., Kulkarni, P., Liu, Q., Cheng, K., Haran, B., Posseme, N., Khakifirooz, A., Loubet, N., Mehta, S., Kuss, J., Destefanis, V., Berliner, N., Sreenivasan

Year:

2011

Language:

english

File:

PDF, 538 KB

english, 2011

40

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Development of Porosimetry Techniques for the Characterization of Plasma-Treated Porous Ultra Low-k Materials

Licitra, Christophe, Chevolleau, Thierry, Bouyssou, Regis, El Kodadi, Mohamed, Haberfehlner, Georg, Hazart, Jerome, Virot, Leopold, Besacier, Maxime, Posseme, Nicolas, Darnon, Maxime, Hurand, Romain,

Year:

2011

Language:

english

File:

PDF, 880 KB

english, 2011

41

[IEEE 2009 IEEE International Interconnect Technology Conference - IITC - Sapporo, Japan (2009.06.1-2009.06.3)] 2009 IEEE International Interconnect Technology Conference - In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks

Posseme, N., Bouyssou, R., Chevolleau, T., David, T., Arnal, V., Chhun, S., Monget, C., Richard, E., Galpin, D., Guillan, J., Arnaud, L., Roy, D., Guillermet, M., Ramard, J., Joubert, O., Verove, C.

Year:

2009

Language:

english

File:

PDF, 1.27 MB

english, 2009

42

[IEEE IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop - Munich, Germany (31 March-1 April 2003)] Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI - Dual damascene trench depth control by Irm/spl trade/: a novel interferometric endpoint system

Mangiagalli, P., Chevolleau, T., Posseme, N., Frum, C., Sabnani, L., Sui, Z., Assous, M.

Year:

2003

Language:

english

File:

PDF, 451 KB

english, 2003

43

Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

Posseme, N., Pollet, O., Barnola, S.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 915 KB

english, 2014

44

Scatterometric porosimetry: A new characterization technique for porous material patterned structures

Bouyssou, R., El Kodadi, M., Licitra, C., Chevolleau, T., Besacier, M., Posseme, N., Joubert, O., Schiavone, P.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2010

Language:

english

File:

PDF, 424 KB

english, 2010

45

Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms

N. Posseme, T. Chevolleau, R. Bouyssou, T. David, V. Arnal, J. P. Barnes, C. Verove, O. Joubert

Year:

2010

Language:

english

File:

PDF, 1.41 MB

english, 2010

46

Prediction of porous dielectric line wiggling phenomenon with metallic hard mask: From simulation to experiment

Ducoté, J., Possémé, N., David, T., Darnon, M., Chevolleau, T., Guillermet, M.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.04 MB

english, 2014

47

[IEEE 2011 Materials for Advanced Metallization (MAM) - Dresden, Germany (2011.05.8-2011.05.12)] 2011 IEEE International Interconnect Technology Conference - Scatterometric Porosimetry for porous low-k patterns characterization

Hurand, R., Bouyssou, R., Darnon, M., Tiphine, C., Licitra, C., El-kodadi, M., Chevolleau, T., David, T., Posseme, N., Besacier, M., Schiavone, P., Bailly, F., Joubert, O., Verove, C.

Year:

2011

Language:

english

File:

PDF, 165 KB

english, 2011

48

[IEEE 2013 IEEE International Interconnect Technology Conference - IITC - Kyoto, Japan (2013.06.13-2013.06.15)] 2013 IEEE International Interconnect Technology Conference - IITC - New fluorocarbon free chemistry proposed as solution to limit porous SiOCH film modification during etching

Posseme, N., Vallier, L., Kao, C-L., Licitra, C., Petit-Etienne, C., Mannequin, C., Gonon, P., Belostotskiy, Sergey, Pender, J., Banola, S., Joubert, O., Nemani, S.

Year:

2013

Language:

english

File:

PDF, 613 KB

english, 2013

49

A Novel Low-Damage Methane-Based Plasma Ash Chemistry ( CH4 / Ar ) : Limiting Metal Barrier Diffusion into Porous Low-k Materials

Posseme, N., David, T., Chevolleau, T., Joubert, O.

Journal:

Electrochemical and Solid-State Letters

Year:

2005

Language:

english

File:

PDF, 72 KB

english, 2005

50

Impact of Downstream Ash Plasmas on Ultra Low-k Materials

Possémé, Nicolas, David, Thibaut, Meininger, P., Louveau, O., Chevolleau, T., Joubert, O., Louis, Didier

Journal:

Solid State Phenomena

Year:

2005

Language:

english

File:

PDF, 620 KB

english, 2005