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51

Millimeter-wave InP lateral transferred-electron oscillators

Binari, S.C., Neidert, R.E., Grubin, H.L., Meissner, K.E.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

1988

Language:

english

File:

PDF, 600 KB

english, 1988

52

Transient Radiation Effects at X-Band in GaAs FETs and ICs

Anderson, W. T., Binari, S. C.

Journal:

IEEE Transactions on Nuclear Science

Year:

1983

Language:

english

File:

PDF, 2.69 MB

english, 1983

53

Growth and properties of scandium epitaxial films on GaN

Kaplan, R., Prokes, S. M., Binari, S. C., Kelner, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

54

Electrical characterisation of Ti Schottky barriers on n-type GaN

Binari, S.C., Dietrich, H.B., Kelner, G., Rowland, L.B., Doverspike, K., Gaskill, D.K.

Journal:

Electronics Letters

Year:

1994

Language:

english

File:

PDF, 293 KB

english, 1994

55

The complex care challenge of transplant patients and families: How to effectively promote care across the continuum through role development in the program

K.A. Schulte, M. Hubner, E. Binari, C. Gaumer

Journal:

Biology of Blood and Marrow Transplantation

Year:

2006

Language:

english

File:

PDF, 69 KB

english, 2006

56

Hierarchical Rules for Argonaute Loading in Drosophila

Benjamin Czech, Rui Zhou, Yaniv Erlich, Julius Brennecke, Richard Binari, Christians Villalta, Assaf Gordon, Norbert Perrimon, Gregory J. Hannon

Journal:

Year:

2009

Language:

english

File:

PDF, 1.06 MB

english, 2009

57

Regulation of Drosophila Tracheal System Development by Protein Kinase B

Jing Jin, Norman Anthopoulos, Benjamin Wetsch, Richard C. Binari, Daniel D. Isaac, Deborah J. Andrew, James R. Woodgett, Armen S. Manoukian

Journal:

Developmental Cell

Year:

2001

Language:

english

File:

PDF, 536 KB

english, 2001

58

A comparative analysis of radiation- and virus-induced leukemias in BALB/c mice

Elizabeth W. Newcomb, Richard Binari, Erwin Fleissneri

Journal:

Year:

1985

Language:

english

File:

PDF, 1.43 MB

english, 1985

59

Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices

Glembocki, Orest J., Caldwell, Joshua D., Mittereder, Jeffrey A., Calame, Jeffrey P., Binari, Steven C., Stahlbush, Robert E.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 430 KB

english, 2009

60

High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates

Meyer, David J., Deen, David A., Storm, David F., Ancona, Mario G., Katzer, D. Scott, Bass, Robert, Roussos, Jason A., Downey, Brian P., Binari, Steven C., Gougousi, Theodosia, Paskova, Tanya, Preble,

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 650 KB

english, 2013

61

[IEEE 2012 70th Annual Device Research Conference (DRC) - University Park, PA, USA (2012.06.18-2012.06.20)] 70th Device Research Conference - Improved GaN-based HEMT performance by nanocrystalline diamond capping

Anderson, T.J., Hobart, K.D., Tadjer, M.J., Feygelson, T.I., Imhoff, E.A., Meyer, D.J., Katzer, D.S., Hite, J.K., Kub, F.J., Pate, B.B., Binari, S.C., Eddy, C.R.

Year:

2012

Language:

english

File:

PDF, 697 KB

english, 2012

62

[IEEE 1999 IEEE MTT-S International Microwave Symposium Digest - Anaheim, CA, USA (13-19 June 1999)] 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) - GaN electronic devices for future systems

Year:

1999

Language:

english

File:

PDF, 306 KB

english, 1999

63

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Thermoelectromechanical simulation of GaN HEMTs

Ancona, M.G., Binari, S.C.

Year:

2011

Language:

english

File:

PDF, 691 KB

english, 2011

64

High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC

Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 233 KB

english, 2003

65

Microwave performance of GaN MESFETs

Rowland, L.B., Kelner, G., Gaskill, D.K., Doverspike, K., Binari, S.C., Kruppa, W.

Journal:

Electronics Letters

Year:

1994

Language:

english

File:

PDF, 199 KB

english, 1994

66

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Storm, D.F., Deen, D.A., Katzer, D.S., Meyer, D.J., Binari, S.C., Gougousi, T., Paskova, T., Preble, E.A., Evans, K.R., Smith, David J.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 881 KB

english, 2013

67

Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

Edwards, A.P., Mittereder, J.A., Binari, S.C., Katzer, D.S., Storm, D.F., Roussos, J.A.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 108 KB

english, 2005

68

A Regulatory Network of Drosophila Germline Stem Cell Self-Renewal

Yan, Dong, Neumüller, Ralph A., Buckner, Michael, Ayers, Kathleen, Li, Hua, Hu, Yanhui, Yang-Zhou, Donghui, Pan, Lei, Wang, Xiaoxi, Kelley, Colleen, Vinayagam, Arunachalam, Binari, Richard, Randklev,

Journal:

Developmental Cell

Year:

2014

Language:

english

File:

PDF, 7.72 MB

english, 2014

69

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Study of the Impact of Electron Traps on GaN HEMT Reliability

Katzer, D. Scott, Mittereder, Jeffrey, Binari, Steven, Storm, David, Roussos, Jason, Klein, Paul

Year:

2006

Language:

english

File:

PDF, 418 KB

english, 2006

70

Diamond metal-semiconductor-metal ultraviolet photodetectors

Binari, S.C., Marchywka, M., Koolbeck, D.A., Dietrich, H.B., Moses, D.

Journal:

Diamond and Related Materials

Year:

1993

Language:

english

File:

PDF, 279 KB

english, 1993

71

[IEEE 2002 International Microwave Symposium (MTT 2002) - Seattle, WA, USA (2-7 June 2002)] 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) - Trapping effects in wide-bandgap microwave FETs

Binari, S.C., Klein, P.B., Kazior, T.E.

Year:

2002

Language:

english

File:

PDF, 436 KB

english, 2002

72

MBE growth of AlGaN∕GaN HEMTs with high power density

Katzer, D.S., Binari, S.C., Storm, D.F., Roussos, J.A., Shanabrook, B.V., Glaser, E.R.

Journal:

Electronics Letters

Year:

2002

Language:

english

File:

PDF, 266 KB

english, 2002

73

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

Deen, David A., Storm, David F., Meyer, David J., Bass, Robert, Binari, Steven C., Gougousi, Theodosia, Evans, Keith R.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.38 MB

english, 2014

74

Drosophila unpaired encodes a secreted protein that activates the JAK signaling pathway

Harrison, D. A., McCoon, P. E., Binari, R., Gilman, M., Perrimon, N.

Journal:

Genes & Development

Year:

1998

Language:

english

File:

PDF, 1.25 MB

english, 1998

75

Planar fully ion implanted InP power junction FET's

J. Boos, S. Binari, G. Kelner, P. Thompson, T. Weng, N. Papanicolaou, R. Henry

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 528 KB

english, 1984

76

&#946;-SiC MESFET's and buried-gate JFET's

G. Kelner, S. Binari, K. Sleger, H. Kong, H. Kong

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 681 KB

english, 1987

77

Combining Genetic Perturbations and Proteomics to Examine Kinase-Phosphatase Networks in Drosophila Embryos

Sopko, Richelle, Foos, Marianna, Vinayagam, Arunachalam, Zhai, Bo, Binari, Richard, Hu, Yanhui, Randklev, Sakara, Perkins, Lizabeth A., Gygi, Steven P., Perrimon, Norbert

Journal:

Developmental Cell

Year:

2014

Language:

english

File:

PDF, 3.26 MB

english, 2014

78

Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy

Storm, D. F., Meyer, D. J., Katzer, D. S., Binari, S. C., Paskova, Tanya, Preble, E. A., Evans, K. R., Zhou, Lin, Smith, David J.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2012

Language:

english

File:

PDF, 1.66 MB

english, 2012

79

[IEEE 21st International Reliability Physics Symposium - Phoenix, AZ, USA (1983.04.5-1983.04.7)] 21st International Reliability Physics Symposium - Radiation Effects in GaAs Devices and ICs

Anderson, W. T., Binari, S. C.

Year:

1983

Language:

english

File:

PDF, 3.12 MB

english, 1983

80

Fully ion implanted InP junction FET's

Boos, J.B., Dietrich, H.B., Weng, T.H., Sleger, K.J., Binari, S.C., Henry, R.L.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 591 KB

english, 1982

81

[JEDEC 2002 GaAs Reliability Workshop. - Monterey, CA, USA (20 Oct. 2002)] GaAs Reliability 2002 Workshop - Creation of current collapse in GaN HEMTs due to short-term DC bias stress

Mittereder, J.A., Binari, S.C., Klein, P.B., Roussos, J.A., Katzer, D.S., Storm, D.F., Koleske, D.D., Wickenden, A.E., Henry, Rl.

Year:

2002

Language:

english

File:

PDF, 78 KB

english, 2002

82

[IEEE Comput. Soc. Press 28th Southeastern Symposium on System Theory - Baton Rouge, LA, USA (31 March-2 April 1996)] Proceedings of 28th Southeastern Symposium on System Theory - High-speed semiconductor devices for communication systems

Valsaraj, N., Sabbah, R., Jones, W., Ikossi-Anastasiou, K., Kyono, C.S., Binari, S.C., Kruppa, W., Dietrich, H.

Year:

1996

Language:

english

File:

PDF, 460 KB

english, 1996

83

Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC

Koleske, D. D., Henry, R. L., Twigg, M. E., Culbertson, J. C., Binari, S. C., Wickenden, A. E., Fatemi, M.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 488 KB

english, 2002

84

[IEEE International Reliability Physics Symposium - Dallas, TX, USA (30 March-4 April 2003)] 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. - Current collapse induced in AlGaN/GaN HEMTs by short-term DC bias stress

Mittereder, J.A., Binari, S.C., Klein, P.B., Roussos, J.A., Katzer, D.S., Storm, D.F., Koleske, D.D., Wickenden, A.E., Henry, R.L.

Year:

2003

Language:

english

File:

PDF, 209 KB

english, 2003

85

[IEEE Southeastcon '81. - Huntsville, AL (5-8 April 198)] Conference Proceedings Southeastcon '81. - Improved Liquid Phase Epitaxial GaAs For Low Series Resistaince Schottky Barrier Mixer Diodes

Binari, S.C., Mattauch, R.J., Oliver, J.D.

Year:

1981

Language:

english

File:

PDF, 517 KB

english, 1981

86

[IEEE 2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] - Monterey, CA, USA (2008.10.12-2008.10.12)] 2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] - RF Arrhenius life testing of X-band GaN HEMITs

Mittereder, J., Binari, S., Via, G., Roussos, I, Caldwell, J., Calame, J.

Year:

2008

Language:

english

File:

PDF, 708 KB

english, 2008

87

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Modeling the small signal characteristics of an ALD Al2O3 insulated-gate AlN/GaN high electron mobility transistor

Deen, D.A., Champlain, J.G., Storm, D.F., Meyer, D.J., Binari, S.C., Eddy, C.R., Bass, R.

Year:

2009

Language:

english

File:

PDF, 126 KB

english, 2009

88

[IRE 1983 International Electron Devices Meeting - ()] 1983 International Electron Devices Meeting - InP JFETs by shallow Zn diffusion

Boos, J.B., Weng, T.H., Binari, S.C., Kelner, G., Henry, R.L.

Year:

1983

Language:

english

File:

PDF, 260 KB

english, 1983

89

Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

Storm, D. F., Katzer, D. S., Binari, S. C., Shanabrook, B. V., Zhou, Lin, Smith, David J.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 414 KB

english, 2004

90

Persistent photoconductivity in n-type GaN

G. Beadie, W. S. Rabinovich, A. E. Wickenden, D. D. Koleske, S. C. Binari, J. A. Freitas

Year:

1997

Language:

english

File:

PDF, 301 KB

english, 1997

91

Gain enhancement in InAlAs/InGaAs heterojunction bipolar transistors using an emitter ledge

Kyono, C. S., Binari, S. C., Ikossi-Anastasiou, K.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 470 KB

english, 1994

92

Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy

M. E. Twigg, D. D. Koleske, A. E. Wickenden, R. L. Henry, S. C. Binari

Year:

2001

Language:

english

File:

PDF, 607 KB

english, 2001

93

Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

Storm, D. F., Katzer, D. S., Binari, S. C., Glaser, E. R., Shanabrook, B. V., Roussos, J. A.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 302 KB

english, 2002

94

[JEDEC GaAs Reliability Workshop. - Baltimore, MD, USA (21 Oct. 2001)] 2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) - Effects of crystal imperfections in multiple quantum well PIN optoelectronic devices and a method of restoring failed device characteristics

Ikossi, K., Katzer, D.S., Binari, S.C., Rabinovich, W.S.

Year:

2001

Language:

english

File:

PDF, 325 KB

english, 2001

95

[IEEE International Conference on Molecular Bean Epitaxy - San Francisco, CA, USA (15-20 Sept. 2002)] International Conference on Molecular Bean Epitaxy - Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Katzer, D.S., Storm, D.F., Binari, S.C., Roussos, J.A., Shanabrook, B.V., Glaser, E.R.

Year:

2002

Language:

english

File:

PDF, 134 KB

english, 2002

96

Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation

Ancona, M. G., Binari, S. C., Meyer, D. J.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 3.07 MB

english, 2012

97

Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

Klein, P. B., Freitas, J. A., Binari, S. C., Wickenden, A. E.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 232 KB

english, 1999

98

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Effect of GaN buffer thickness on the electrical properties of RF-MBE grown AlGaN/GaN HEMTs on free-standing GaN substrates

Storm, D.F., Katzer, D.S., Deen, D.A., Bass, R., Meyer, D.J., Binari, S.C., Paskova, T., Preble, E.A., Evans, K.R.

Year:

2009

Language:

english

File:

PDF, 253 KB

english, 2009

99

Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

Zhou, Lin, Smith, David J., Storm, D. F., Katzer, D. S., Binari, S. C., Shanabrook, B. V.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 608 KB

english, 2006

100

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Mittereder, J. A., Binari, S. C., Klein, P. B., Roussos, J. A., Katzer, D. S., Storm, D. F., Koleske, D. D., Wickenden, A. E., Henry, R. L.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 235 KB

english, 2003