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51

Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters

P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2005

Language:

english

File:

PDF, 59 KB

english, 2005

52

Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface

V. A. Volodin, M. D. Efremov, V. Ya. Prints, V. V. Preobrazhenskii, B. R. Semyagin, A. O. Govorov

Journal:

Year:

1997

Language:

english

File:

PDF, 68 KB

english, 1997

53

Optical phonons in quantum-wire structures [JETP Lett. 67, No. 2, 120–134 (25 January 1998)]

A. Milekhin, Yu. Pusep, Yu. Yanovskii, V. Preobrazhenskii, B. Semyagin

Journal:

Year:

1998

File:

PDF, 34 KB

1998

54

Optical phonons in quantum-wire structures

A. Milekhin, Yu. Pusep, Yu. Yanovskii, V. Preobrazhenskii, B. Semyagin

Journal:

Year:

1998

Language:

english

File:

PDF, 87 KB

english, 1998

55

Lateral localization of optical phonons in GaAs quantum islands

M. D. Efremov, V. A. Volodin, V. V. Preobrazhenskii, B. R. Semyagin, V. A. Sachkov, V. V. Bolotov, E. A. Galaktionov, A. V. Kretinin

Journal:

Year:

1999

Language:

english

File:

PDF, 58 KB

english, 1999

56

Yb3+:KY(WO4)2laser with a fast saturable absorber

A. A. Kovalyov, N. V. Kuleshov, V. E. Kisel’, S. V. Kuril’chik, V. V. Preobrazhenskii, M. A. Putyato, O. P. Pchelyakov, N. N. Rubtsova, B. R. Semyagin

Journal:

Year:

2011

Language:

english

File:

PDF, 166 KB

english, 2011

57

Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature

A. V. Boĭtsov, N. A. Bert, Yu. G. Musikhin, V. V. Chaldyshev, M. A. Yagovkina, V. V. Preobrazhenskiĭ, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2006

Language:

english

File:

PDF, 217 KB

english, 2006

58

As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus

A. V. Boitsov, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2009

Language:

english

File:

PDF, 208 KB

english, 2009

59

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus

V. V. Chaldyshev, M. A. Yagovkina, M. V. Baidakova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2009

Language:

english

File:

PDF, 265 KB

english, 2009

60

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2009

Language:

english

File:

PDF, 256 KB

english, 2009

61

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

N. A. Bert, A. L. Kolesnikova, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, A. E. Romanov, V. M. Seleznev, B. R. Semyagin, V. V. Chaldyshev

Journal:

Year:

2009

Language:

english

File:

PDF, 649 KB

english, 2009

62

Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy

E. A. Emel’yanov, D. F. Feklin, A. V. Vasev, M. A. Putyato, B. R. Semyagin, A. P. Vasilenko, O. P. Pchelyakov, V. V. Preobrazhenskii

Journal:

Optoelectronics, Instrumentation and Data Processing

Year:

2011

Language:

english

File:

PDF, 296 KB

english, 2011

63

The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy

B. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'yeva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach

Journal:

Russian Physics Journal

Year:

2000

Language:

english

File:

PDF, 287 KB

english, 2000

64

Influence of the Substrate Orientation on the Silicon Capture intoA- andB- Sublattices of Gallium Arsenide in Molecular Beam Epitaxy

I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, S. E. Toropov

Journal:

Russian Physics Journal

Year:

2002

Language:

english

File:

PDF, 242 KB

english, 2002

65

Observation ofLO-phonon localization in GaAs quantum wires on faceted (311)A surfaces

V. A. Volodin, M. D. Efremov, V. Ya. Prints, V. V. Preobrazhenskii, B. R. Semyagin

Journal:

Year:

1996

Language:

english

File:

PDF, 84 KB

english, 1996

66

Localized optical vibrational modes in GaSb/AlSb superlattices

A. G. Milekhin, Yu. A. Pusep, Yu. A. Yanovskii, V. V. Preobrazhenskii, B. R. Semyagin, D. I. Lubyshev

Journal:

Year:

1996

Language:

english

File:

PDF, 60 KB

english, 1996

67

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Electrical properties of MIS-structures and Schottky barriers of Si/GaAs (001) interface

Aksenov, Maxim S., Preobrazhensky, Valery V., Putyato, Mikhail A., Semyagin, Boris R., Valisheva, Natalya A., Tereshchenko, Oleg E.

Year:

2011

Language:

english

File:

PDF, 100 KB

english, 2011

68

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Formation of HfO2/GaAs(001) interface with Si interlayer

Golyashov, Vladimir A., Aksenov, Maxim S., Valisheva, Natalya A., Prosvirin, Igor P., Kalinkin, Alexandr V., Preobrazhensky, Valery V., Putyato, Mikhail A., Semyagin, Boris. R., Tereshchenko, Oleg E.

Year:

2011

Language:

english

File:

PDF, 172 KB

english, 2011

69

Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers

Baidakova, M. V., Bert, N. A., Chaldyshev, V.V., Nevedomsky, V. N., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Acta Crystallographica Section B Structural Science

Year:

2013

Language:

english

File:

PDF, 276 KB

english, 2013

70

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Cherkashin, N., Reboh, S., Hÿtch, M. J., Claverie, A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Chaldyshev, V. V.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 2.66 MB

english, 2013

71

Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates

Emelyanov, E. A., Kokhanenko, A. P., Pchelyakov, O. P., Loshkarev, I. D., Seleznev, V. A., Putyato, M. A., Semyagin, B. R., Preobrazhenskii, V. V., Niu, Zhicuan, Ni, Haiqiao

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 776 KB

english, 2013

72

New system of self-assembled GaSb/GaP quantum dots

D. S. Abramkin, M. A. Putyato, A. K. Gutakovskii, B. R. Semyagin…

Journal:

Year:

2012

Language:

english

File:

PDF, 388 KB

english, 2012

73

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Year:

2013

Language:

english

File:

PDF, 1.43 MB

english, 2013

74

Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers

Baidakova, M. V., Bert, N. A., Chaldyshev, V.V., Nevedomsky, V. N., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials

Year:

2013

Language:

english

File:

PDF, 305 KB

english, 2013

75

[IEEE 2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Novosibirsk, Russia (2014.6.30-2014.7.4)] 2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - The solid solutions (AIII) PxAs1−x: Mechanism of formation the V group sublattise composition

Emelyanov, Eugene A., Putyato, Mikhail A., Semyagin, Boris R., Feklin, Dmitry F., Preobrazhenskii, Valerii V.

Year:

2014

Language:

english

File:

PDF, 312 KB

english, 2014

76

[IEEE IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO - London, UK (24-25 Nov. 1997)] IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) - Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping

Chaldyshev, V.V., Bert, N.A., Faleev, N.N., Kunitsyn, A.E., Musikhin, Yu.G., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.

Year:

1997

Language:

english

File:

PDF, 754 KB

english, 1997

77

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Formation of complexes of quantum dots InAs and nanoclusters as in matrix GaAs by molecular beam epitaxy

Zaichenko, Alexander A., Semyagin, B. R., Preobrazhenskii, V. V., Putyato, M. A., Nevedomskii, V. N., Chaldyshev, V. V., Bert, N. A.

Year:

2011

Language:

english

File:

PDF, 201 KB

english, 2011

78

[IEEE 2010 11th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2010) - Novosibirsk, Russia (2010.06.30-2010.07.4)] 2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices - Effects of method for formation of first monolayers on strain state of GaAs films on vicinal Si(001) Substrate

Loshkarev, Ivan D., Vasilenko, Anton P., Putyato, Mikhail A., Semyagin, Boris R., Preobrazhenskii, Valery V.

Year:

2010

Language:

english

File:

PDF, 452 KB

english, 2010

79

[IEEE 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI - Canberra, ACT, Australia (3-7 July 2000)] 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) - Enhanced intermixing in anion and cation sublattices of low-temperature grown GaAs

Chaldyshev, V.V., Bert, N.A., Musikhin, Yu.G., Suvorova, A.A., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.

Year:

2000

Language:

english

File:

PDF, 244 KB

english, 2000

80

[IEEE 10th International Semiconducting and Insulating Materials - Berkeley, CA, USA (1-5 June 1998)] Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) - LT GaAs delta-doped with In: enhanced As excess, In-Ga intermixing, As cluster array ordering

Bert, N.A., Chaldyshev, V.V., Suvorova, A.A., Faleev, N.N., Kunitsyn, A.E., Musikhin, Yu.G., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.

Year:

1998

Language:

english

File:

PDF, 313 KB

english, 1998

81

Semiconductor A 3 B 5 nanostructures for infrared femtosecond lasers

Rubtsova, N N, Kochubei, S A, Kovalyov, A A, Preobrazhenskii, V V, Putyato, M A, Semyagin, B R, Shamirzaev, T S, Borisov, G M, Kisel', V E, Kuleshov, N V, Kuril'chik, S V, Buganov, O V, Tikhomirov, S

Journal:

Journal of Physics Conference Series

Year:

2013

Language:

english

File:

PDF, 543 KB

english, 2013

82

[IEEE 2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Novosibirsk, Russia (2013.07.1-2013.07.5)] 2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices - GaAs MBE on vicinal substrates Si(001): Impact of nucleation and growth conditions on surface morphology and crystallographic properties of the epitaxial layers

Petrushkov, Mikhail O., Putyato, Mikhail A., Semyagin, Boris R., Emelyanov, Eugene A., Feklin, Dmitry F., Preobrazhenskii, Valerii V.

Year:

2013

Language:

english

File:

PDF, 531 KB

english, 2013

83

[IEEE 2010 11th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2010) - Novosibirsk, Russia (2010.06.30-2010.07.4)] 2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices - MBE growth of GaPxAs1−x and GaSbxAs1−x solid solutions with As2 or As4 molecular beam

Emelyanov, Eugene A., Putyato, Mikhail A., Semyagin, Boris R., Vasilenko, A., Preobrazhenskii, Valery V.

Year:

2010

Language:

english

File:

PDF, 407 KB

english, 2010

84

[Novosibirsk Student Branch of IEEE 2003 Siberian Russian Workshop on Electron Devices and Materials Proceedings. 4th Annual - Erlagol, Atai, Russia (1-4 July 2003)] 2003 Siberian Russian Workshop on Electron Devices and Materials. Proceedings. 4th Annual (IEEE Cat. No.03EX664) - Control of wurzite GaN layer polarity on initial stages of growth during ammonia molecular beam epitaxy on (0001) Al/sub 2/O/sub 3/ substrate

Preobrazhenskii, V.V., Semyagin, B.R., Putyato, M.A., Khamzin, T.K., Mansurov, V.G., Toropov, A.I., Pchelyakov, O.P.

Year:

2003

Language:

english

File:

PDF, 468 KB

english, 2003

85

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Effect of As2 and As4 fluxes on the morphology of GaSb(001) surface during growth of GaSb/InAs heterojunction by MBE

Emelyanov, Eugene A., Putyato, Mikhail A., Semyagin, Boris R., Vasilenko, A., Feklin, D., Vasev, Andrey V., Preobrazhenskii, Valery V.

Year:

2011

Language:

english

File:

PDF, 987 KB

english, 2011

86

Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface

D. Litvinov, A. Rosenauer, D. Gerthsen, N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, I. P. Soshnikov

Year:

2002

Language:

english

File:

PDF, 737 KB

english, 2002

87

Bistability of charge accumulated in low-temperature-grown GaAs

Brounkov, P. N., Chaldyshev, V. V., Suvorova, A. A., Bert, N. A., Konnikov, S. G., Chernigovskii, A. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 341 KB

english, 1998

88

Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs

N. A. Bert, V. V. Chaldyshev, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, P. Werner

Year:

1999

Language:

english

File:

PDF, 730 KB

english, 1999

89

Local stresses induced by nanoscale As–Sb clusters in GaAs matrix

Chaldyshev, V. V., Bert, N. A., Romanov, A. E., Suvorova, A. A., Kolesnikova, A. L., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Werner, P., Zakharov, N. D., Claverie, A.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 450 KB

english, 2002

90

Enhanced As–Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs

Chaldyshev, V. V., Bert, N. A., Musikhin, Yu. G., Suvorova, A. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Werner, P., Gösele, U.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 390 KB

english, 2001

91

In–Ga intermixing in low-temperature grown GaAs delta doped with In

Bert, N. A., Chaldyshev, V. V., Musikhin, Yu. G., Suvorova, A. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Werner, P.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 576 KB

english, 1999

92

Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

Cherkashin, N. A., Claverie, A., Bonafos, C., Chaldyshev, V. V., Bert, N. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Werner, P.

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 730 KB

english, 2007

93

[IEEE 2010 11th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2010) - Novosibirsk, Russia (2010.06.30-2010.07.4)] 2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices - Fabrication of quantum dots of InAs built in matrix of GaAs by molecular beam epitaxy

Zaichenko, Alexander A., Semyagin, B. R.

Year:

2010

Language:

english

File:

PDF, 574 KB

english, 2010

94

Enhanced arsenic excess in low-temperature grown GaAs due to indium doping

Bert, N. A., Chaldyshev, V. V., Kunitsyn, A. E., Musikhin, Yu. G., Faleev, N. N., Tretyakov, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 418 KB

english, 1997

95

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures

Abramkin, D. S., Putyato, M. A., Budennyy, S. A., Gutakovskii, A. K., Semyagin, B. R., Preobrazhenskii, V. V., Kolomys, O. F., Strelchuk, V. V., Shamirzaev, T. S.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.89 MB

english, 2012

96

[IEEE 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI - Canberra, ACT, Australia (3-7 July 2000)] 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) - Majority carrier accumulation in low-temperature-grown GaAs layer inserted into n-and p-type matrices

Brunkov, P.N., Chaldyshev, V.V., Chernigovskii, A.V., Suvorova, A.A., Bert, N.A., Konnikov, S.G., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R.

Year:

2000

Language:

english

File:

PDF, 234 KB

english, 2000

97

[IEEE 2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Novosibirsk, Russia (2013.07.1-2013.07.5)] 2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices - Molecular beam epitaxy of solid solutions GaPxAs1−x: Effect of growth condition on the composition of group V sublattice

Emelyanov, Eugene A., Putyato, Mikhail A., Semyagin, Boris R., Feklin, Dmitrii F., Preobrazhenskii, Valerii V.

Year:

2013

Language:

english

File:

PDF, 431 KB

english, 2013

98

Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix

Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Year:

2014

Language:

english

File:

PDF, 1.94 MB

english, 2014

99

Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature

Bert, N A, Chaldyshev, V V, Faleev, N N, Kunitsyn, A E, Lubyshev, D I, Preobrazhenskii, V V, Semyagin, B R, Tret'yakov, V V

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 272 KB

english, 1997

100

Interface reconstruction in GaAs/AlAs ultrathin superlattices grown on (311) and (001) surfaces

Efremov, M D, Volodin, V A, Sachkov, V A, Preobrazhenski, V V, Semyagin, B R, Bolotov, V V, Galaktionov, E A, Kretinin, A V

Journal:

Year:

2001

Language:

english

File:

PDF, 170 KB

english, 2001

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