116

Formation of pn junctions by bonding of GaAs layer onto diamond

Year:
1996
Language:
english
File:
PDF, 448 KB
english, 1996
138

Surface properties and field emission of boron nitride

Year:
2008
Language:
english
File:
PDF, 1006 KB
english, 2008
147

Validity of the broken-bond model for the DX center in GaAs

Year:
1992
Language:
english
File:
PDF, 162 KB
english, 1992
148

Microscopic mechanism of atomic diffusion in Si under pressure

Year:
1992
Language:
english
File:
PDF, 621 KB
english, 1992
149

Energetics and local vibrations of the DX center in GaAs

Year:
1993
Language:
english
File:
PDF, 443 KB
english, 1993
150

Real-space-partitioned separable pseudopotential

Year:
1992
Language:
english
File:
PDF, 151 KB
english, 1992