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1

A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique

Yang, Lin, Yang, Lin-An, Rong, Taotao, Jin, Zhi, Hao, Yue

Journal:

IEICE Electronics Express

Year:

2019

Language:

english

File:

PDF, 1002 KB

english, 2019

2

A new model of subthreshold swing for sub-100 nm MOSFETs

Lin-An Yang, Chun-Li Yu, Yue Hao

Journal:

Microelectronics Reliability

Year:

2008

Language:

english

File:

PDF, 215 KB

english, 2008

3

An improved substrate current model for ultra-thin gate oxide MOSFETs

Lin-An Yang, Yue Hao, Chun-Li Yu, Feng-Yan Han

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 237 KB

english, 2006

4

Point defect determination by eliminating frequency dispersion in C–V measurement for AlGaN/GaN heterostructure

Liang Li, Lin-An Yang, Jin-Cheng Zhang, Lin-Xia Zhang, Li-Sha Dang, Qian-Wei Kuang, Yue Hao

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 272 KB

english, 2012

5

[IEEE 2012 12th International Workshop on Junction Technology (IWJT) - Shanghai (2012.05.14-2012.05.15)] 2012 12th International Workshop on Junction Technology - An efficient model for trap analysis in C-V measurement for AlGaN/GaN heterostructure

Liang Li,, Wei Mao,, Lin-An Yang,, Jin-Cheng Zhang,, Qian-Wei Kuang,, Yue Hao,

Year:

2012

Language:

english

File:

PDF, 442 KB

english, 2012

6

Drain avalanche breakdown and gate instabilities in 4H-SiC MESFET's

Lv, Hong-Liang, Zhang, Yi-men, Zhang, Yu-ming, Yang, Lin-an

Journal:

Diamond and Related Materials

Year:

2004

Language:

english

File:

PDF, 172 KB

english, 2004

7

Design of Millimeter-Wave Resonant Cavity and Filter Using 3-D Substrate-Integrated Circular Waveguide

Li, Yang, Yang, Lin-An, Du, Lin, Zhang, Kunzhe, Hao, Yue

Journal:

IEEE Microwave and Wireless Components Letters

Year:

2017

Language:

english

File:

PDF, 1.85 MB

english, 2017

8

Substrate Integrated Waveguide structural Transmission Line and Filter on Silicon Carbide Substrate

Li, Yang, Yang, Lin-An, Zou, Hao, Zhang, Heng-Shuang, Ma, Xiao-Hua, Hao, Yue

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 455 KB

english, 2017

9

[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Design of wideband and high efficiency THz Yagi antenna by using air bridge technology

Yang Li,, Shao-bo Wang,, Lin-an Yang,, Sheng-rui Xu,, Yue Hao,

Year:

2016

Language:

english

File:

PDF, 393 KB

english, 2016

10

Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

Mi, Minhan, Ma, Xiao-Hua, Yang, Ling, Lu, Yang, Hou, Bin, Zhu, Jiejie, Zhang, Meng, Zhang, Heng-Shuang, Zhu, Qing, Yang, Lin-An, Hao, Yue

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.32 MB

english, 2017

11

Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Zhang, Meng, Ma, Xiao-Hua, Yang, Ling, Mi, Minhan, Hou, Bin, He, Yunlong, Wu, Sheng, Lu, Yang, Zhang, Heng-Shuang, Zhu, Qing, Yin, Jun, Wu, Jiafeng, Yang, Lin-An, Hao, Yue

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.27 MB

english, 2018

12

Performance enhancement of the dual-metal gate In 0.53 Ga 0.47 As dopingless TFET by using a platinum metal strip insertion

Liu, Hu, Yang, Lin-An, Chen, Yao, Jin, Zhi, Hao, Yue

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 1.42 MB

english, 2019

13

An optimization technique for parameter extraction of ultra-deep submicron LDD MOSFET’s

Yue Hao, Lin-An Yang, Chun-Li Yu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 233 KB

english, 2006

14

Threading dislocation reduction in transit region of GaN terahertz Gunn diodes

Li, Liang, Yang, Lin-An, Zhang, Jin-Cheng, Xue, Jun-Shuai, Xu, Sheng-Rui, Lv, Ling, Hao, Yue, Niu, Mu-Tong

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 754 KB

english, 2012

15

Analytic model of I-V Characteristics of 4H-SiC MESFETs based on multiparameter mobility model

Hongliang Lv, Yimen Zhang, Yuming Zhang, Lin-An Yang

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 232 KB

english, 2004

16

Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode

Lin-An Yang, Yue Hao, Qingyang Yao, Jincheng Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 327 KB

english, 2011

17

Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al 2 O 3 Gate Dielectric

Mao, Wei, Zhang, Jin-Cheng, Xue, Jun-Shuai, Hao, Yao, Ma, Xiao-Hua, Wang, Chong, Liu, Hong-Xia, Xu, Sheng-Rui, Yang, Lin-An, Bi, Zhi-Wei, Liang, Xiao-Zhen, Zhang, Jin-Feng, Kuang, Xian-Wei

Journal:

Chinese Physics Letters

Year:

2010

Language:

english

File:

PDF, 968 KB

english, 2010

18

Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode

Wang, Ying, Yang, Lin-An, Mao, Wei, Long, Shuang, Hao, Yue

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 984 KB

english, 2013

19

[IEEE 2014 14th International Workshop on Junction Technology (IWJT) - Shanghai, China (2014.5.18-2014.5.20)] 2014 International Workshop on Junction Technology (IWJT) - Terahertz oscillation in GaN HEMT-like BEAN diode with a composite contact

Wang, Ying, Yang, Lin-An, Hao, Yue

Year:

2014

Language:

english

File:

PDF, 557 KB

english, 2014

20

SRNoC: A novel high performance Shared-Resource routing scheme for Network-on-Chip

Shu, Hao, Ma, Pei-jun, Shi, Jiang-yi, Xu, Zhao, Yang, Lin-an

Journal:

Microelectronics Journal

Year:

2014

Language:

english

File:

PDF, 6.33 MB

english, 2014

21

The effect of a HfO 2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

Mao, Wei, Yang, Cui, Hao, Yue, Ma, Xiao-Hua, Wang, Chong, Zhang, Jin-Cheng, Liu, Hong-Xia, Bi, Zhi-Wei, Xu, Sheng-Rui, Yang, Lin-An, Yang, Ling, Zhang, Kai, Zhang, Nai-Qian, Pei, Yi

Journal:

Chinese Physics B

Year:

2011

Language:

english

File:

PDF, 1.54 MB

english, 2011

22

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - A comprehensive transport model for the electron mobility in AlxGa1−xN lattices-matched to GaN

Yao, Qing-Yang, Yang, Lin-An, Hao, Yue

Year:

2010

Language:

english

File:

PDF, 339 KB

english, 2010

23

Symmetric quantiles and their applications

Chiang, Yuang-Chin, Chen, Lin-An, Peter Yang, Hsien-Chueh

Journal:

Journal of Applied Statistics

Year:

2006

Language:

english

File:

PDF, 130 KB

english, 2006

24

Development and characteristic analysis of a field-plated Al 2 O 3 /AlInN/GaN MOS—HEMT

Mao, Wei, Yang, Cui, Hao, Yao, Zhang, Jin-Cheng, Liu, Hong-Xia, Bi, Zhi-Wei, Xu, Sheng-Rui, Xue, Jun-Shuai, Ma, Xiao-Hua, Wang, Chong, Yang, Lin-An, Zhang, Jin-Feng, Kuang, Xian-Wei

Journal:

Chinese Physics B

Year:

2011

Language:

english

File:

PDF, 901 KB

english, 2011

25

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Channel resistance method for parameter extraction of ultra-thin gate oxide LDD MOSFET's

Yang, Lin-an, Yu, Chun-li, Hao, Yue

Year:

2006

Language:

english

File:

PDF, 85 KB

english, 2006

26

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - On the Self-Limiting Hot-Carrier Degradation Mechanism in Ultra-deep Submicrometer Lightly-doped-drain NMOSFET's

Yu, Chun-li, Hao, Yue, Yang, Lin-an

Year:

2006

Language:

english

File:

PDF, 82 KB

english, 2006

27

Mode type quasi-range and its applications

Chen, Lin-An, Peter Yang, Hsien-Chueh, Tang, Chau-Shyun

Journal:

Journal of Applied Statistics

Year:

2008

Language:

english

File:

PDF, 140 KB

english, 2008

28

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - An improved electron mobility model for wurtzite ZnO

Yang, Lin-An, Yao, Qing-Yang, Zhang, Xu-Hu, Liu, Qi, Hao, Yue

Year:

2010

Language:

english

File:

PDF, 310 KB

english, 2010

29

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

Mao, Wei, She, Wei-Bo, Yang, Cui, Zhang, Chao, Zhang, Jin-Cheng, Ma, Xiao-Hua, Zhang, Jin-Feng, Liu, Hong-Xia, Yang, Lin-An, Zhang, Kai, Zhao, Sheng-Lei, Chen, Yong-He, Zheng, Xue-Feng, Hao, Yue

Journal:

Chinese Physics B

Year:

2014

Language:

english

File:

PDF, 3.50 MB

english, 2014

30

Improved crystal quality of GaN film with the in-plane lattice-matched In 0.17 Al 0.83 N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition

Li, Liang, Yang, Lin-An, Xue, Jun-Shuai, Cao, Rong-Tao, Xu, Sheng-Rui, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics B

Year:

2014

Language:

english

File:

PDF, 625 KB

english, 2014

31

Point defect determination by photoluminescence and capacitance—voltage characterization in a GaN terahertz Gunn diode

Li, Liang, Yang, Lin-An, Zhou, Xiao-Wei, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics B

Year:

2013

Language:

english

File:

PDF, 627 KB

english, 2013

32

The improvement of Al 2 O 3 /AlGaN/GaN MISHEMT performance by N 2 plasma pretreatment

Qian, Feng, Yuan, Tian, Zhi-Wei, Bi, Yuan-Zheng, Yue, Jin-Yu, Ni, Jin-Cheng, Zhang, Yue, Hao, Lin-An, Yang

Journal:

Chinese Physics B

Year:

2009

Language:

english

File:

PDF, 313 KB

english, 2009

33

InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric

Mao, Wei, Hao, Yue, Yang, Cui, Zhang, Jin-Cheng, Ma, Xiao-Hua, Wang, Chong, Liu, Hong-Xia, Yang, Lin-An, Zhang, Jin-Feng, Zheng, Xue-Feng, Zhang, Kai, Chen, Yong-He, Yang, Li-Yuan

Journal:

Chinese Physics Letters

Year:

2013

Language:

english

File:

PDF, 106 KB

english, 2013

34

Political Theory, Research and Methodology

Mao, Wei, Hao, Yue, Yang, Cui, Zhang, Jin-Cheng, Ma, Xiao-Hua, Wang, Chong, Liu, Hong-Xia, Yang, Lin-An, Zhang, Jin-Feng, Zheng, Xue-Feng, Zhang, Kai, Chen, Yong-He, Yang, Li-Yuan

Journal:

American Political Science Review

Year:

1953

Language:

english

File:

PDF, 179 KB

english, 1953

35

AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al 2 O 3 Laminated Dielectric by Atomic Layer Deposition

Bi, Zhi-Wei, Hao, Yue, Feng, Qian, Gao, Zhi-Yuan, Zhang, Jin-Cheng, Mao, Wei, Zhang, Kai, Ma, Xiao-Hua, Liu, Hong-Xia, Yang, Lin-An, Mei, Nan, Chang, Yong-Ming

Journal:

Chinese Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.31 MB

english, 2012

36

Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes

Shou-Guo, Wang, Lin-An, Yang, Yi-Men, Zhang, Yu-Ming, Zhang, Zhi-Yong, Zhang, Jun-Feng, Yan

Journal:

Chinese Physics

Year:

2003

Language:

english

File:

PDF, 210 KB

english, 2003

37

A compact I – V model for lightly-doped-drain MOSFETs

Chun-Li, Yu, Lin-An, Yang, Yue, Hao

Journal:

Chinese Physics

Year:

2004

Language:

english

File:

PDF, 349 KB

english, 2004

38

[IEEE 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Beijing, China (Oct. 18-21, 2004)] Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - A simple method for effective channel length, series resistance and mobility extraction in deep-submicron MOSFETs

Chun-li Yu,, Yue Hao,, Lin-an Yang,

Year:

2004

Language:

english

File:

PDF, 1.16 MB

english, 2004

39

[IEEE 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - Guilin, China (2014.10.28-2014.10.31)] 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - A numerical analysis on the thermal effect in GaN based Gunn diode

Huang, Yong-Hong, Wang, Ying, Yang, Lin-An, Zhai, Hui-Fang, Wang, Zhi-Zhe, Hao, Yue

Year:

2014

Language:

english

File:

PDF, 870 KB

english, 2014

40

The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode

Wang, Ying, Yang, Lin-An, Wang, Zhi-Zhe, Ao, Jin-Ping, Hao, Yue

Journal:

physica status solidi (a)

Year:

2016

Language:

english

File:

PDF, 1.00 MB

english, 2016

41

Modulation of the domain mode in GaN-based planar Gunn diode for terahertz applications

Wang, Ying, Yang, Lin-An, Wang, Zhi-Zhe, Hao, Yue

Journal:

Physica status solidi

Year:

2016

Language:

english

File:

PDF, 420 KB

english, 2016

42

Welsh's Trimmed Mean for the Nonlinear Regression Model

Jing-Ye Huang, Eugene K. Yang, Mei-Ling Lin and Lin-An Chen

Journal:

Year:

2003

Language:

english

File:

PDF, 1.44 MB

english, 2003

43

Wide Band Radar Cross-Section Reduction for Antenna Using Frequency selective absorber

du, lin, li, yang, Zhang, Kunzhe, Yang, Lin-an

Journal:

Electronics Letters

Year:

2016

Language:

english

File:

PDF, 522 KB

english, 2016

44

Design of 3D Filtering Antenna for the Application of Terahertz

li, yang, Yang, Lin-an, wang, shao-bo, du, lin, Hao, Yue

Journal:

Electronics Letters

Year:

2016

Language:

english

File:

PDF, 1.24 MB

english, 2016

45

Dual priority congestion aware shared-resource Network-on-Chip architecture

Shu, Hao, Shi, Jiangyi, Ma, Peijun, Gu, Huaxi, Pan, Weitao, Yang, Lin-an

Journal:

IEICE Electronics Express

Year:

2016

Language:

english

File:

PDF, 2.13 MB

english, 2016

46

Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs

Wu, Mei, Ma, Xiao-Hua, Yang, Ling, Zhu, Qing, Zhang, Meng, Yang, Lin-An, Hao, Yue

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.41 MB

english, 2018

47

Performance of resonant tunneling diodes based on the nonpolar-oriented AlGaN/GaN heterostructures

Rong, Taotao, Yang, Lin-An, Zhao, Ziyue, Yang, Lin, Hao, Yue

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.79 MB

english, 2018

48

GAIN ENHANCEMENT AND WIDEBAND RCS REDUCTION OF A MICROSTRIP ANTENNA USING TRIPLE-BAND PLANAR ELECTROMAGNETIC BAND-GAP STRUCTURE

Li, Yang, Zhang, Kunzhe, Yang, Lin-an, Du, Lin

Journal:

Progress In Electromagnetics Research Letters

Year:

2017

Language:

english

File:

PDF, 1.17 MB

english, 2017

49

Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Li, Yang, Ma, Xiao-Hua, Yang, Lin-An, Ao, Jin-Ping, Hao, Yue

Journal:

Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 2.50 MB

english, 2019

50

Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Li, Yang, Ma, Xiao-Hua, Yang, Lin-An, Ao, Jin-Ping, Hao, Yue

Journal:

Journal of Applied Physics

Year:

2019

File:

PDF, 2.50 MB

2019