Volume 261; Issue 2-3

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Journal of Crystal Growth
Volume 261; Issue 2-3

Journal of Crystal Growth

Volume 261; Issue 2-3

1

Preface

Catherine G. Caneau, Rajaram Bhat

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 121 KB

english, 2004

2

A new approach to performing equilibrium surface reaction calculations and its application to predicting growth of gallium nitride

Sandip Mazumder, Debasis Sengupta

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 283 KB

english, 2004

3

Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor

E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov, B.S. Yavich, W.N Wang

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 422 KB

english, 2004

4

Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

K.M. Mazaev, A.V. Lobanova, E.V. Yakovlev, R.A. Talalaev, A.O. Galyukov, Yu.N. Makarov, D. Gotthold, B. Albert, L. Kadinski, B. Peres

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 394 KB

english, 2004

5

The impact of growth parameters on the formation of InAs quantum dots on GaAs(1 0 0) by MOCVD

J.G. Cederberg, F.H. Kaatz, R.M. Biefeld

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 498 KB

english, 2004

6

Characterization of optical and electrical quality of Mg-doped InxGa1−xN grown by MOCVD

Sung-Nam Lee, Tan Sakong, Wonseok Lee, Hosun Paek, Joongkon Son, Euijoon Yoon, Okhyun Nam, Y. Park

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 200 KB

english, 2004

7

Effect of initial process conditions on the structural properties of AlN films

Q.S. Paduano, D.W. Weyburne, J. Jasinski, Z. Liliental-Weber

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 454 KB

english, 2004

8

Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry

Omar J. Bchir, Kelly M. Green, Mark S. Hlad, Timothy J. Anderson, Benjamin C. Brooks, Lisa McElwee-White

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 243 KB

english, 2004

9

Metalorganic chemical vapor deposition and characterizations of epitaxial MgxZn1−xO (0⩽x⩽0.33) films on r-sapphire substrates

S. Muthukumar, Y. Chen, J. Zhong, F. Cosandey, Y. Lu, T. Siegrist

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 393 KB

english, 2004

10

Simulation of GaN and InGaN p–i–n and n–i–n photo-devices

Kunakorn Poochinda, Tai-Chang Chen, Thomas G. Stoebe, N.Lawrence Ricker

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 251 KB

english, 2004

11

Fundamental kinetics determining growth rate profiles of InP and GaAs in MOCVD with horizontal reactor

Ik-Tae Im, Ho Jin Oh, Masakazu Sugiyama, Yoshiyaki Nakano, Yukihiro Shimogaki

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 456 KB

english, 2004

12

MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength

H.C. Kuo, Y.S. Chang, C.F. Lin, T.C. Lu, S.C. Wang

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 246 KB

english, 2004

13

Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes

C.F. Lin, H.H. Yao, J.W. Lu, Y.L. Hsieh, H.C. Kuo, S.C. Wang

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 216 KB

english, 2004

14

Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices

C.A. Wang, D.A. Shiau, D.R. Calawa

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 456 KB

english, 2004

15

Organometallic vapor phase epitaxy of n-GaSb and n-GaInAsSb for low resistance ohmic contacts

C.A. Wang, D.A. Shiau, R.K. Huang, C.T. Harris, M.K. Connors

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 197 KB

english, 2004

16

Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

C.A Wang, D.A Shiau, A Lin

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 487 KB

english, 2004

17

Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD

Yasuhiro Oda, Noriyuki Watanabe, Masahiro Uchida, Michio Sato, Haruki Yokoyama, Takashi Kobayashi

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 314 KB

english, 2004

18

OMVPE of GaAsSbN for long wavelength emission on GaAs

G.M. Peake, K.E. Waldrip, T.W. Hargett, N.A. Modine, D.K. Serkland

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 250 KB

english, 2004

19

Mask interference effect in a densely arrayed waveguide fabricated by using narrow-stripe selective MOVPE

Shinya Sudo, Kazuo Mori, Tatsuya Sasaki

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 270 KB

english, 2004

20

The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials

Ho-jin Oh, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 266 KB

english, 2004

21

The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor

D.V. Forbes, P.B. Corbett, D.M. Hansen, T.J. Goodnough, L. Zhang, K. Myli, J.-Y. Yeh, L. Mawst

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 228 KB

english, 2004

22

Deposition and characterization of zirconium tin titanate thin films as a potential high-k material for electronic devices

E.L Mays, Dennis W Hess, William S Rees Jr

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 265 KB

english, 2004

23

Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(1 1 1) template formed by C+-ion implantation into Si(1 1 1) substrate

A. Yamamoto, T. Yamauchi, T. Tanikawa, M. Sasase, B.K. Ghosh, A. Hashimoto, Y. Ito

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 259 KB

english, 2004

24

New DFB grating structure using dopant-induced refractive index step

R.W. Glew, K. Hinzer, J.K. White, D. Goodchild, G. Knight, A.J. SpringThorpe, St.J. Dixon-Warren

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 273 KB

english, 2004

25

MOVPE growth of Ga 3D structures for fabrication of GaN materials

M. Sacilotti, L. Imhoff, S. Bourgeois, C. Dumas, J. Decobert, P. Baldeck, I. Colombier

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 346 KB

english, 2004

26

Performance of single use purifiers vs. regenerable purifiers for growth of high brightness gallium nitride LEDs

Robert Torres, Tadaharu Watanabe, Joseph Vininski, Dave Lawrence, Zhihong Yang, Wen Wang, John Garcia, C.H. Yan

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 213 KB

english, 2004

27

Correlations between electrical and optical properties for OMVPE InN

A. Yamamoto, K. Sugita, H. Takatsuka, A. Hashimoto, V.Yu. Davydov

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 249 KB

english, 2004

28

Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

L. Kadinski, V. Merai, A. Parekh, J. Ramer, E.A. Armour, R. Stall, A. Gurary, A. Galyukov, Yu. Makarov

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 576 KB

english, 2004

29

Editorial Board

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 107 KB

english, 2004

30

Contents OMVPE-11

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 139 KB

english, 2004

31

Optimal spectral region for real-time monitoring of sub-ppm levels of water in phosphine by cavity ring-down spectroscopy

Susan Y. Lehman, Kris A. Bertness, Joseph T. Hodges

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 237 KB

english, 2004

32

An accurate continuous level indication for precursor bubblers

R.K. Kanjolia, R. Odedra, A.J. Kingsley, K.M. Coward, S. Travis, S.A. Rushworth, L.M. Smith

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 309 KB

english, 2004

33

Performance of sub-atmospheric pressure hydride gas source and delivery system for MOCVD

M.W Raynor, V.H Houlding, R Frye, S Griffing, A Clark, B Walterson

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 261 KB

english, 2004

34

In situ monitored MOVPE growth of undoped and p-doped GaSb(1 0 0)

Z. Kollonitsch, K. Möller, H.-J. Schimper, Ch. Giesen, M. Heuken, F. Willig, T. Hannappel

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 258 KB

english, 2004

35

In situ stress measurements during the MOCVD growth of AlN buffer layers on (1 1 1) Si substrates

Srinivasan Raghavan, Joan M Redwing

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 257 KB

english, 2004

36

Structure and properties of GaNxOy films grown by nitridation of GaAs (1 0 0) substrates

M.C. Marco de Lucas, F. Fabreguette, M. Linsavanh, L. Imhoff, O. Heintz, C. Josse-Courty, M.T. Mesnier, V. Potin, S. Bourgeois, M. Sacilotti

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 412 KB

english, 2004

37

High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

C.M. Fetzer, R.R. King, P.C. Colter, K.M. Edmondson, D.C. Law, A.P. Stavrides, H. Yoon, J.H. Ermer, M.J. Romero, N.H. Karam

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 492 KB

english, 2004

38

Study of the incorporation factor (K) and its application to laser diode production

D.M. Hansen, T.J. Goodnough, P.B. Corbett, L. Zhang, D.V. Forbes

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 295 KB

english, 2004

39

Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE

Masakazu Sugiyama, Ho-jin Oh, Yoshiaki Nakano, Yukihiro Shimogaki

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 481 KB

english, 2004

40

Employment of a GaN buffer in the OMVPE growth of InN on sapphire substrates

A. Yamamoto, N. Imai, K. Sugita, A. Hashimoto

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 221 KB

english, 2004

41

In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors

Richard W. Hoffman Jr., Michael Murphy, Jonathan Cruel, Michael Belousov, Boris Volf, Chris Murray, Eric A. Armour

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 420 KB

english, 2004

42

Cluster formation and magnetic properties of Mn-incorporated (GaIn)As/InP layers grown by metal-organic vapor phase epitaxy

S. Hara, M. Lampalzer, T. Torunski, K. Volz, W. Treutmann, W. Stolz

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 391 KB

english, 2004

43

Nature of the parasitic chemistry during AlGaInN OMVPE

J.Randall Creighton, George T. Wang, William G. Breiland, Michael E. Coltrin

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 325 KB

english, 2004

44

Announcement ICCG-14/ICVGE-12

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 1.89 MB

english, 2004