Volume 55; Issue 1-4

Microelectronic Engineering

Volume 55; Issue 1-4
1

Preface

Giorgi de Santi, Giampiero Ottaviani
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 25 KB
english, 2001
5

Fast and accurate analysis of the multiconductor interconnects

H. Ymeri, B. Nauwelaers, K. Maex, D. De Roest
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 74 KB
english, 2001
8

EPR and UV-Raman study of BPSG thin films: structure and defects

M. Fanciulli, E. Bonera, E. Carollo, L. Zanotti
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 246 KB
english, 2001
15

Effect of a thin Ta layer on the C49–C54 transition

F. La Via, F. Mammoliti, M.G. Grimaldi, S. Quilici, F. Meinardi
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 149 KB
english, 2001
19

Thermal stability of amorphous Ti3Si1O8 thin films

P.H. Giauque, H.B. Cherry, M.-A. Nicolet
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 137 KB
english, 2001
20

Growth and properties of LPCVD W–Si–N barrier layers

S. Bystrova, J. Holleman, P.H. Woerlee
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 618 KB
english, 2001
24

Modification of β-FeSi2 precipitate layers in silicon by hydrogen implantation

B. Schuller, R. Carius, S. Mantl
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 399 KB
english, 2001
27

Key reliability issues for copper integration in damascene architecture

R Gonella
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 198 KB
english, 2001
39

Comparative study of Cu and CuAl0.3 wt.% films

G Schwalbe, J Baumann, C Kaufmann, T Gessner, H Koenigsmann, A Bartzsch, P Gilman
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 528 KB
english, 2001
40

A percolative simulation of electromigration phenomena

C. Pennetta, L. Reggiani, Gy. Trefán, F. Fantini, I. DeMunari, A. Scorzoni
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 264 KB
english, 2001
41

Structural characterisation of titanium silicon carbide reaction

A. Makhtari, F. La Via, V. Raineri, L. Calcagno, F. Frisina
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 132 KB
english, 2001
42

Committees

Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 21 KB
english, 2001
43

Acknowledgements

Journal:
Microelectronic Engineering
Year:
2001
File:
PDF, 20 KB
2001
44

Author Index

Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 50 KB
english, 2001
45

Introduction

Ing.Raimondo Paletto
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 24 KB
english, 2001
52

Highly metastable amorphous or near-amorphous ternary films (mictamict alloys)

M.-A. Nicolet, P.H. Giauque
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 737 KB
english, 2001
54

Advanced silver-based metallization patterning for ULSI applications

T.L. Alford, Phucanh Nguyen, Yuxiao Zeng, J.W. Mayer
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 612 KB
english, 2001