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Volume 19; Issue 11
Main
IEEE Electron Device Letters
Volume 19; Issue 11
IEEE Electron Device Letters
Volume 19; Issue 11
1
Hot hole stress induced leakage current (SILC) transient in tunnel oxides
Tahui Wang
,
Nian-Kai Zous
,
Jia-Long Lai
,
Chimoon Huang
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 107 KB
Your tags:
english, 1998
2
Comments on "17.3% Efficiency Metal-oxide-semiconductor (MOS) Solar Cells With Liquid-phase-deposited Silicon Dioxide"
Rohatgi, A.
,
Moschner, J.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 16 KB
Your tags:
english, 1998
3
The effect of native oxide on thin gate oxide integrity
Chin, A.
,
Lin, B.C.
,
Chen, W.J.
,
Lin, Y.B.
,
Tsai, C.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 71 KB
Your tags:
english, 1998
4
Comments on "17.3% efficiency metal-oxide-semiconductor (MOS) solar cells with liquid-phase-deposited silicon dioxide"
Rohatgi, A.
,
Moschner, J.
,
Green, M.A.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 28 KB
Your tags:
english, 1998
5
A simple and efficient self-limiting erase scheme for high performance split-gate flash memory cells
Ahn, B.J.
,
Sone, J.H.
,
Kim, J.W.
,
Choi, I.H.
,
Kim, D.M.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 69 KB
Your tags:
english, 1998
6
Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate
Weiquan Zhang,
,
Mansun Chan,
,
Fung, S.K.H.
,
Ko, P.K.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 73 KB
Your tags:
english, 1998
7
Stress polarity dependence of the activation energy in time-dependent dielectric breakdown of thin gate oxides
Eriguchi, K.
,
Niwa, M.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 69 KB
Your tags:
english, 1998
8
Effect of interconnect layer on Pb(Zr,Ti)O3 thin film capacitor degradation
Kobayashi, S.
,
Amanuma, K.
,
Hada, H.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 46 KB
Your tags:
english, 1998
9
Author's reply
Lee, K.-C.
,
Hwu, J.-G.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 30 KB
Your tags:
english, 1998
10
A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs
Somerville, M.H.
,
Blanchard, R.
,
del Alamo, J.A.
,
Duh, G.
,
Chao, P.C.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 74 KB
Your tags:
english, 1998
11
A mechanism for hydrogen-related transient effects in carbon-doped AlGaAs/GaAs heterostructure bipolar transistors
Chi, J.Y.
,
Ke Lu,
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 52 KB
Your tags:
english, 1998
12
MOS transistors with stacked SiO/sub 2/-Ta/sub 2/O/sub 5/-SiO/sub 2/ gate dielectrics for giga-scale integration of CMOS technologies
Kizilyalli, I.C.
,
Huang, R.Y.S.
,
Roy, R.K.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 98 KB
Your tags:
english, 1998
13
A degradation mechanism of EEPROM cell operational margins which remains undetected by conventional quality assurance
Mattausch, H.J.
,
Allinger, R.
,
Kerber, M.
,
Braun, H.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 71 KB
Your tags:
english, 1998
14
Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation
Shu Qin,
,
Yuanzhong Zhou,
,
Chung Chan,
,
Chu, P.K.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 58 KB
Your tags:
english, 1998
15
Abstracts of Manuscripts in The Journal of Technology Computer Aided Design (TCAD)
Simpson, H. D.
,
Coolbear, T.
,
Vermue, M.
,
Daniel, R. M.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 18 KB
Your tags:
english, 1998
16
Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric
Donggun Park,
,
Ya-chin King,
,
Qiang Lu,
,
Tsu-Jae King,
,
Chenming Hu,
,
Kalnitsky, A.
,
Sing-Pin Tay,
,
Chia-Cheng Cheng,
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 71 KB
Your tags:
english, 1998
17
Narrow width effects of bottom-gate polysilicon thin film transistors
Yaung, D.N.
,
Fang, Y.K.
,
Hwang, K.C.
,
Lee, K.Y.
,
Wu, K.H.
,
Ho, J.J.
,
Chen, C.Y.
,
Wang, Y.J.
,
Liang, M.S.
,
Lee, J.Y.
,
Wuu, S.G.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 52 KB
Your tags:
english, 1998
18
Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems
Kizilyalli, I.C.
,
Abeln, G.C.
,
Chen, Z.
,
Lee, J.
,
Weber, G.
,
Kotzias, B.
,
Chetlur, S.
,
Lyding, J.W.
,
Hess, K.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 73 KB
Your tags:
english, 1998
19
Scalable PD/SOI CMOS with floating bodies
Fossum, J.G.
,
Pelella, M.M.
,
Krishnan, S.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 125 KB
Your tags:
english, 1998
20
Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFTs
Ching-Fa Yeh,
,
Tai-Ju Chen,
,
Chung Liu,
,
Jiqun Shao,
,
Cheung, N.W.
Journal:
IEEE Electron Device Letters
Year:
1998
Language:
english
File:
PDF, 65 KB
Your tags:
english, 1998
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