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1

Modeling vacancy injection from the silicon/silicon-nitride interface

Mohammad Hasanuzzaman, Yaser M. Haddara

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 301 KB

english, 2008

2

Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms

Mohammad Hasanuzzaman, Yaser M. Haddara

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 359 KB

english, 2008

3

Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon

Haddara, Yaser M., Folmer, Brennan T., Law, Mark E., Buyuklimanli, Temel

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 232 KB

english, 2000

4

Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in silicon under inert and dry oxidizing ambient annealing

Hasanuzzaman, Mohammad, Haddara, Yaser M., Knights, Andrew P.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 558 KB

english, 2016

5

[IEEE 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2017.5.16-2017.5.18)] 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Bonding mechanism and electrochemical impedance of directly bonded liquid crystal polymer and copper

Redhwan, Taufique Z., Alam, Arif U., Haddara, Yaser M., Howlader, Matiar M. R.

Year:

2017

Language:

english

File:

PDF, 228 KB

english, 2017

6

Direct bonding of copper and liquid crystal polymer

Redhwan, Taufique Z., Alam, Arif U., Catalano, Massimo, Wang, Luhua, Kim, Moon J., Haddara, Yaser M., Howlader, Matiar M.R.

Journal:

Materials Letters

Year:

2017

Language:

english

File:

PDF, 933 KB

english, 2017

7

A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process

Hasanuzzaman, Mohammad, Haddara, Yaser M., Knights, Andrew P.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 2.00 MB

english, 2012

8

A kinetic model for the oxidation of silicon germanium alloys

Rabie, Mohamed A., Haddara, Yaser M., Carette, Jacques

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 410 KB

english, 2005

9

TRANSIENT DIFFUSION OF BERYLLIUM AND SILICON IN GALLIUM ARSENIDE

Haddara, Yaser M., Bravman, John C.

Journal:

Annual Review of Materials Science

Year:

1998

Language:

english

File:

PDF, 314 KB

english, 1998

10

[IEEE 2013 18th International Conference on Digital Signal Processing (DSP) - Fira (2013.4.27-2013.4.30)] 2013 Saudi International Electronics, Communications and Photonics Conference - Modeling growth, morphology, and composition of ternary III – V nanowires

Fakhr, Ahmed, Haddara, Yaser M., LaPierre, Ray R.

Year:

2013

Language:

english

File:

PDF, 324 KB

english, 2013

11

Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap

Hasanuzzaman, Mohammad, Haddara, Yaser M., Knights, Andrew P.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.44 MB

english, 2012

12

Effect of encapsulant material on the diffusion of beryllium in molecular beam epitaxy gallium arsenide

Haddara, Yaser M., Deal, Michael D., Bravman, John C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

13

Modeling germanium diffusion in Si[sub 1−x]Ge[sub x]/Si superlattice structures

Hasanuzzaman, Mohammad, Haddara, Yaser M., Knights, Andrew P.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 615 KB

english, 2009

14

Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium

Shoukri, Kareem M., Haddara, Yaser M., Knights, Andrew P., Coleman, Paul G., Rahman, Mohammad M., Tatsuyama, C.C.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 136 KB

english, 2004

15

Interdiffusion Behavior of Si/Si1−x Gex. Layers in Inert and Oxidizing Ambients

Griglione, Michelle, Anderson, Tim, Haddara, Yaser, Law, Mark, Jones, Kevin

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 813 KB

english, 1998

16

Nitrogen Implantation and Diffusion in Silicon

Adam, Lahir Shaik, Law, Mark E., Dokumaci, Omer, Haddara, Yaser, Murthy, Cheruvu, Park, Heemyong, Hegde, Suri, Chidambarrao, Dureseti, Mollis, Steve, Domenicucci, Tony, Dziobkowski, Chester, Jones, Ke

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 240 KB

english, 1999

17

First phase to form during cobalt germanidation

Rabie, Mohamed A., Mirza, Souzan, Jarvis, Victoria, Haddara, Yaser M.

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 2.13 MB

english, 2017

18

Copper and liquid crystal polymer bonding towards lead sensing

Redhwan, Taufique Z., Alam, Arif U., Haddara, Yaser M., Howlader, Matiar M. R.

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.47 MB

english, 2018

19

[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Novel experimentally calibrated multiphase TCAD model for cobalt germanide growth

Rabie, Mohamed A., Aden-Ali, Ishaq, Haddara, Yaser M.

Year:

2017

Language:

english

File:

PDF, 455 KB

english, 2017

20

Cobalt germanide contacts: growth reaction, phase formation models, and electrical properties

Rabie, Mohamed A., Mirza, Souzan, Hu, Yujie, Haddara, Yaser M.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2019

Language:

english

File:

PDF, 2.42 MB

english, 2019