Hajime Asahi: search on Z-Library

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51

[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Growth and characterization of TlInGaAsN/TlGaAsN triple quantum wells on GaAs substrates

Kim, Kang Min, Sakai, Yuji, Krishnamurthy, Daivasigamani, Hasegawa, Shigehiko, Asahi, Hajime

Year:

2010

Language:

english

File:

PDF, 289 KB

english, 2010

52

Quantum Size Effect in Thin Bismuth Films

Asahi, Hajime, Humoto, Takabumi, Kawazu, Akira

Journal:

Japanese Journal of Applied Physics

Year:

1974

File:

PDF, 64 KB

1974

53

Molecular-beam epitaxial growth of InP homoepitaxial layers and their electrical and optical properties

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 785 KB

english, 1981

54

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

Tanaka, Hidenao, Kawamura, Yuichi, Nojima, Shunji, Wakita, Koichi, Asahi, Hajime

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 998 KB

english, 1987

55

Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices

Fudeta, Mayuko, Asahi, Hajime, Kim, Seong-Jin, Noh, Joo-Hyong, Asami, Kumiko, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 86 KB

english, 1999

56

Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A

Watanabe, Daisuke, Asahi, Hajime, Noh, Joo-Hyong, Fudeta, Mayuko, Mori, Jun, Matsuda, Satoru, Asami, Kumiko, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 171 KB

english, 2000

57

Selective area growth of GaN nanorods on patterned W/SiO2/Si substrates by RF-MBE

JongUk Seo, Shigehiko Hasegawa, Hajime Asahi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 431 KB

english, 2009

58

Rare-earth doped III-nitride semiconductors for semiconductor spintronics

Asahi, Hajime, Hasegawa, Shigehiko, Zhou, Yi-Kai, Emura, Shuichi

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 594 KB

english, 2012

59

Optical properties of InGaPN epilayer with low nitrogen content grown by molecular beam epitaxy

Min Kim, Kang, Nonoguchi, Shogo, Krishnamurthy, Daivasigamani, Emura, Shuichi, Hasegawa, Shigehiko, Asahi, Hajime

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 892 KB

english, 2012

60

Silicon Doping in InP Grown by Metalorganic Vapor Phase Epitaxy Using Silane

Oishi, Mamoru, Nojima, Shunji, Asahi, Hajime

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 324 KB

1985

61

Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy

Liu, Xuefeng, Asahi, Hajime, Okuno, Yasutoshi, Inoue, Keishi, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 981 KB

1993

62

Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices

Kim, Seong-Jin, Asahi, Hajime, Asami, Kumiko, Takemoto, Minori, Fudeta, Mayuko, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

1998

File:

PDF, 1.65 MB

1998

63

MOMBE (Metalorganic Molecular Beam Epitaxy) growth of InGaSb on GaSb

Tadaaki Kaneko, Hajime Asahi, Yasutoshi Okuno, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1989

Language:

english

File:

PDF, 406 KB

english, 1989

64

[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Synthesis and characterization of Gd-doped InGaN thin films and superlattice structure

Siti Nooraya Mohd Tawil,, Krishnamurthy, Daivasigamani, Kakimi, Rina, Ishimaru, Manabu, Emura, Shuichi, Hasegawa, Shigehiko, Asahi, Hajime

Year:

2010

Language:

english

File:

PDF, 153 KB

english, 2010

65

Effects of growth temperature on nitrogen incorporation into InGaPN epilayer and its optical properties

Kim, Kang Min, Hasegawa, Shigehiko, Asahi, Hajime, Ryu, Jeong Ho

Journal:

Ceramics International

Year:

2014

Language:

english

File:

PDF, 563 KB

english, 2014

66

High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2× 2) and (4× 4) Reflection High Energy Electron Diffraction Patterns

Iwata, Kakuya, Asahi, Hajime, Yu, Soon Jae, Asami, Kumiko, Fujita, Hideki, Fushida, Masahiro, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 870 KB

1996

67

Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices

Kim, Joon Hong, Asahi, Hajime, Doi, Kenji, Asami, Kumiko, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 552 KB

1996

68

Gas Source Molecular Beam Epitaxial Growth of GaN$_{{\bf 1}-{\ninmbi x}}$P x ($\mbi{x} \Leq {\bf 0.015}$) Using Ion-Removed Electron Cyclotron Resonance Radical Cell

Iwata, Kakuya, Asahi, Hajime, Asami, Kumiko, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 743 KB

1996

69

Field Emission from Polycrystalline GaN Grown on Mo Substrate

Tampo, Hitoshi, Yamanaka, Takayuki, Yamada, Kohichiro, Ohnishi, Kuniyuki, Hashimoto, Masahiko, Asahi, Hajime

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 55 KB

english, 2002

70

Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs (311)A Substrate

Noh, Joo-Hyong, Asahi, Hajime, Kim, Seong-Jin, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

1998

File:

PDF, 985 KB

1998

71

Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes

Kawamura, Yuichi, Wakita, Koichi, Asahi, Hajime, Kurumada, Katsuhiko

Journal:

Japanese Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 313 KB

english, 1986

72

Molecular Beam Epitaxy (Materials and Applications for Electronics and Optoelectronics) || Ferromagnet/Semiconductor Heterostructures and Nanostructures Grown by Molecular Beam Epitaxy

Asahi, Hajime, Horikoshi, Yoshiji

Year:

2019

Language:

english

File:

PDF, 923 KB

english, 2019

73

Development of an orexin-2 receptor selective agonist, [Ala11, d-Leu15]orexin-B

Shuichi Asahi, Shin-Ichiro Egashira, Masao Matsuda, Hisashi Iwaasa, Akio Kanatani, Mitsuru Ohkubo, Masaki Ihara, Hajime Morishima

Journal:

Bioorganic & Medicinal Chemistry Letters

Year:

2003

Language:

english

File:

PDF, 107 KB

english, 2003

74

High Gd Concentration GaGdN Grown at Low Temperatures

Yi Kai Zhou, Sung Woo Choi, Shigeya Kimura, Shuichi Emura, Shigehiko Hasegawa, Hajime Asahi

Journal:

Journal of Superconductivity and Novel Magnetism

Year:

2007

Language:

english

File:

PDF, 333 KB

english, 2007

75

Refractive indices of In0.49Ga0.51-xAlxP lattice matched to GaAs

Tanaka, Hidenao, Kawamura, Yuichi, Asahi, Hajime

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 434 KB

english, 1986

76

The pharmacokinetic pattern of glycosylated human recombinant lymphotoxin(LT) in rats after intravenous administration.

KAWATSU, Masaji, TAKEO, Kazuyuki, KAJIKAWA, Tamio, FUNAHASHI, Iwao, ASAHI, Takashi, KAKUTANI, Tetsu, YAMASHITA, Toshiaki, KAWAHARADA, Hajime, WATANABE, Kiyoshi

Journal:

Journal of Pharmacobio-Dynamics

Year:

1990

File:

PDF, 876 KB

1990

77

Spontaneous Formation of Nano-scale Phase Separation in TlInGaAsN/TlInP Quantum Well Structures

Ishimaru, Manabu, Tanaka, Yuusuke, Hasegawa, Shigehiko, Asahi, Hajime, Sato, Kazuhisa, Konno, Toyohiko J.

Journal:

Year:

2009

File:

PDF, 2.44 MB

2009

78

Gas source MEE growth of InGaAs/InP superlattices

Hajime Asahi, Teruaki Kohara, Ravi Kant Soni, Nobuyuki Takeyasu, Kumiko Asami, Shuichi Emura, Shun-ichi Gonda

Journal:

Applied Surface Science

Year:

1992

Language:

english

File:

PDF, 262 KB

english, 1992

79

Migration-enhanced epitaxy (MEE) growth of five-layer asymmetric coupled quantum well (FACQW) and its cross-sectional STM observation

Joo-Hyong Noh, Shigehiko Hasegawa, Tatsuya Suzuki, Taro Arakawa, Kunio Tada, Hajime Asahi

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 229 KB

english, 2004

80

Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy

Daivasigamani Krishnamurthy, Siti Nooraya Mohd Tawil, Rina Kakimi, Manabu Ishimaru, Shuichi Emura, Shigehiko Hasegawa, Hajime Asahi

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 136 KB

english, 2011

81

Metalorganic–vapor-phase-epitaxial growth of Mg-doped Ga1−xAlxAs layers and their properties

Kozen, Atsuo, Nojima, Shunji, Tenmyo, Jiro, Asahi, Hajime

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 559 KB

english, 1986

82

Near Room Temperature CW Operation at 1.70 µm of MBE Grown InGaAs/InP DH Lasers

Asahi, Hajime, Kawamura, Yuichi, Ikeda, Mutsuo, Okamoto, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

1981

File:

PDF, 526 KB

1981

83

Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal Annealing

Nakashima, Kiichi, Kawaguchi, Yoshihiro, Kawamura, Yuichi, Asahi, Hajime, Imamura, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1987

File:

PDF, 507 KB

1987

84

Spectroscopic study of Ga-In-P based self-organized lateral superlattices

Ghosh, Sandip, Arora, B M, Kim, Seong-Jin, Noh, Joo-Hyong, Asahi, Hajime

Journal:

Semiconductor Science and Technology

Year:

1999

Language:

english

File:

PDF, 279 KB

english, 1999

85

Emission spectra from AlN and GaN doped with rare earth elements

Sung Woo Choi, Shuichi Emura, Shigeya Kimura, Moo Seong Kim, Yi Kai Zhou, Nobuaki Teraguchi, Akira Suzuki, Akira Yanase, Hajime Asahi

Journal:

Journal of Alloys and Compounds

Year:

2006

Language:

english

File:

PDF, 256 KB

english, 2006

86

Raman scattering in InGaAlP layers grown by molecular-beam epitaxy

Asahi, Hajime, Emura, Shuichi, Gonda, Shin-ichi, Kawamura, Yuichi, Tanaka, Hidenao

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 856 KB

english, 1989

87

GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy

Iwata, Kakuya, Asahi, Hajime, Asami, Kumiko, Kuroiwa, Reiko, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

1998

File:

PDF, 637 KB

1998

88

Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate

Noh, Joo-Hyong, Asahi, Hajime, Fudeta, Mayuko, Watanabe, Daisuke, Mori, Jun, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 246 KB

english, 1999

89

Structure Analysis of Composition Modulation in Epitaxially-Grown III–V Semiconductor Alloys

Ishimaru, Manabu, Hasegawa, Shigehiko, Asahi, Hajime, Sato, Kazuhisa, Konno, Toyohiko J.

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.23 MB

english, 2013

90

Influence of rare earth additives and boron component on electrical conductivity of sodium rare earth borate glasses

Susumu Nakayama, Takamitsu Watanabe, Taro Asahi, Hajime Kiyono, Yan Lin Aung, Masatomi Sakamoto

Journal:

Ceramics International

Year:

2010

Language:

english

File:

PDF, 334 KB

english, 2010

91

Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structures

Nakashima, Kiichi, Kawaguchi, Yoshihiro, Kawamura, Yuichi, Imamura, Yoshihiro, Asahi, Hajime

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 548 KB

english, 1988

92

Neuropsychological Features of Microbleeds and Cortical Microinfarct Detected by High Resolution Magnetic Resonance Imaging

Ueda, Yukito, Satoh, Masayuki, Tabei, Ken-ichi, Kida, Hirotaka, Ii, Yuichiro, Asahi, Masaru, Maeda, Masayuki, Sakuma, Hajime, Tomimoto, Hidekazu, Lee, Jae-Hong

Journal:

Journal of Alzheimer's Disease

Year:

2016

Language:

english

File:

PDF, 391 KB

english, 2016

93

Influence of native silicon oxides on the growth of GaN nanorods on Si(001)

Shigehiko Hasegawa, Jong-Uk Seo, Kanae Uchida, Hiroyuki Tambo, Hisashi Kameoka, Manabu Ishimaru, Hajime Asahi

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 572 KB

english, 2009

94

Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures

Zhou, Yi Kai, Choi, Sung Woo, Emura, Shuichi, Hasegawa, Shigehiko, Asahi, Hajime

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 462 KB

english, 2008

95

In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic

Hayashi, Toshihiko, Asahi, Hajime, Yamamoto, Kazuhiko, Hidaka, Ken-ichi, Gonda, Shun-ichi

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 1.42 MB

1996

96

Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells

Almokhtar, Mohamed, Emura, Shuichi, Koide, Akihiro, Fujikawa, Takashi, Asahi, Hajime

Journal:

Journal of Alloys and Compounds

Year:

2015

Language:

english

File:

PDF, 637 KB

english, 2015

97

Ferromagnetism and Luminescence of Diluted Magnetic Semiconductors GaGdN and AlGdN

Emura, Shuichi, Takahashi, Masahiro, Tambo, Hiroyuki, Suzuki, Akira, Nakamura, Tetsuya, Zhou, Yi-Kai, Hasagawa, Shigehiko, Asahi, Hajime

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 1.03 MB

english, 2008

98

Influence of yttrium component on water corrosion resistance of sodium ion conducting silicate glass

Kiyono, Hajime, Maruoka, Ken, Asahi, Taro, Nakayama, Susumu

Journal:

Ceramics International

Year:

2015

Language:

english

File:

PDF, 636 KB

english, 2015

99

Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor

Subashchandran, Shanthi, Kimura, Shigeya, Kim, Moo Seong, Kobayashi, Satoru, Zhou, Yi Kai, Hasegawa, Shigehiko, Asahi, Hajime

Journal:

Japanese Journal of Applied Physics

Year:

2006

File:

PDF, 291 KB

2006

100

AIP Conference Proceedings [AIP PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors - Seoul, (Korea) (25–30 July 2010)] - Temperature Dependence of Photoluminescence Peak Energy in Ga(In)NAs

Emura, Shuichi, Nakamoto, Hiroki, Ishikawa, Fumitaro, Kondow, Masahiko, Asahi, Hajime, Ihm, Jisoon, Cheong, Hyeonsik

Year:

2011

Language:

english

File:

PDF, 167 KB

english, 2011

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