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51

Growth and Characterization of GaAs Epitaxial Layers by MOCVD

Hudait, Mantu Kumar, Modak, Prasanta, Krupanidhi, S.B.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 1.66 MB

english, 1996

52

Photoconductivity decay in metamorphic InAsPâInGaAs double heterostructures grown on InAs[sub y]P[sub 1ây] compositionally step-graded buffers

Lin, Y., Hudait, M. K., Johnston, S. W., Ahrenkiel, R. K., Ringel, S. A.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 440 KB

english, 2005

53

High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

Tang, Shih-Hsuan, Chang, Edward Yi, Hudait, Mantu, Maa, Jer-Shen, Liu, Chee-Wee, Luo, Guang-Li, Trinh, Hai-Dang, Su, Yung-Hsuan

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 746 KB

english, 2011

54

BaTiO 3 Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices

Hudait, Mantu K., Zhu, Yan, Jain, Nikhil, Maurya, Deepam, Zhou, Yuan, Varghese, Ron, Priya, Shashank

Journal:

ACS Applied Materials & Interfaces

Year:

2013

Language:

english

File:

PDF, 1.67 MB

english, 2013

55

Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions

Hudait, Mantu Kumar, Krupanidhi, S. B.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

1999

Language:

english

File:

PDF, 362 KB

english, 1999

56

Reduced erbium-doped ceria nanoparticles: one nano-host applicable for simultaneous optical down- and up-conversions

Shehata, Nader, Meehan, Kathleen, Hassounah, Ibrahim, Hudait, Mantu, Jain, Nikhil, Clavel, Michael, Elhelw, Sarah, Madi, Nabil

Journal:

Nanoscale Research Letters

Year:

2014

Language:

english

File:

PDF, 419 KB

english, 2014

57

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications

Hudait, M. K., Dewey, G., Datta, S., Fastenau, J. M., Kavalieros, J., Liu, W. K., Lubyshev, D., Pillarisetty, R., Rachmady, W., Radosavljevic, M., Rakshit, T., Chau, Robert

Year:

2007

Language:

english

File:

PDF, 4.34 MB

english, 2007

58

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

Radosavljevic, M., Chu-Kung, B., Corcoran, S., Dewey, G., Hudait, M. K., Fastenau, J. M., Kavalieros, J., Liu, W. K., Lubyshev, D., Metz, M., Millard, K., Mukherjee, N., Rachmady, W., Shah, U., Chau,

Year:

2009

Language:

english

File:

PDF, 1.78 MB

english, 2009

59

Heterogeneous Nucleation of Ice on Carbon Surfaces

Lupi, Laura, Hudait, Arpa, Molinero, Valeria

Journal:

Journal of the American Chemical Society

Year:

2014

Language:

english

File:

PDF, 1.37 MB

english, 2014

60

Kinetic Control of Self-Catalyzed Indium Phosphide Nanowires, Nanocones, and Nanopillars

Woo, Robyn L., Gao, Li, Goel, Niti, Hudait, Mantu K., Wang, Kang L., Kodambaka, Suneel, Hicks, Robert F.

Journal:

Year:

2009

Language:

english

File:

PDF, 1.21 MB

english, 2009

61

Tensile-Strained Nanoscale Ge/In 0.16 Ga 0.84 As Heterostructure for Tunnel Field-Effect Transistor

Zhu, Yan, Maurya, Deepam, Priya, Shashank, Hudait, Mantu K.

Journal:

ACS Applied Materials & Interfaces

Year:

2014

Language:

english

File:

PDF, 4.51 MB

english, 2014

62

[IEEE 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings - Canberra, ACT, Australia (8-11 Dec. 1996)] 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings - Effect of V/III ratio on the optical properties of LPMOVPE grown undoped GaAs epi-films

Hudait, M.K., Modak, P., Hardikar, S., Krupanidhi, S.B.

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

63

Ice Crystallization in Ultrafine Water–Salt Aerosols: Nucleation, Ice-Solution Equilibrium, and Internal Structure

Hudait, Arpa, Molinero, Valeria

Journal:

Journal of the American Chemical Society

Year:

2014

Language:

english

File:

PDF, 5.62 MB

english, 2014

64

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al[sub 2]O[sub 3]/n-In[sub 0.53]Ga[sub 0.47]As metal-oxide-semiconductor capacitor

Trinh, H. D., Chang, E. Y., Wu, P. W., Wong, Y. Y., Chang, C. T., Hsieh, Y. F., Yu, C. C., Nguyen, H. Q., Lin, Y. C., Lin, K. L., Hudait, M. K.

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 1.03 MB

english, 2010

65

Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

Mohata, D., Rajamohanan, B., Mayer, T., Hudait, M., Fastenau, J., Lubyshev, D., Liu, A. W. K., Datta, S.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 706 KB

english, 2012

66

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Growth, fabrication and characterization of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InAs/sub 0.3/P/sub 0.7/ composite channel HEMTs

Dongmin Liu,, Hudait, M., Yong Lin,, Hyeongnam Kim,, Ringel, S.A., Wu Lu,

Year:

2005

Language:

english

File:

PDF, 78 KB

english, 2005

67

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al[sub 2]O[sub 3]

Ali, A., Madan, H. S., Kirk, A. P., Zhao, D. A., Mourey, D. A., Hudait, M. K., Wallace, R. M., Jackson, T. N., Bennett, B. R., Boos, J. B., Datta, S.

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 1.18 MB

english, 2010

68

High-performance In/sub 0.53/Ga/sub 0.47/As thermophotovoltaic devices grown by solid source molecular beam epitaxy

M. Hudait, C. Andre, O. Kwon, M. Palmisiano, S. Ringel

Year:

2002

Language:

english

File:

PDF, 277 KB

english, 2002

69

High-quality InAs[sub y]P[sub 1−y] step-graded buffer by molecular-beam epitaxy

Hudait, M. K., Lin, Y., Wilt, D. M., Speck, J. S., Tivarus, C. A., Heller, E. R., Pelz, J. P., Ringel, S. A.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 736 KB

english, 2003

70

Evidence of interface-induced persistent photoconductivity in InP∕In[sub 0.53]Ga[sub 0.47]As∕InP double heterostructures grown by molecular-beam epitaxy

Hudait, M. K., Lin, Y., Goss, S. H., Smith, P., Bradley, S., Brillson, L. J., Johnston, S. W., Ahrenkiel, R. K., Ringel, S. A.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 486 KB

english, 2005

71

Direct Measurement of Quantum Confinement Effects at Metal to Quantum-Well Nanocontacts

Tivarus, C., Pelz, J. P., Hudait, M. K., Ringel, S. A.

Journal:

Physical Review Letters

Year:

2005

Language:

english

File:

PDF, 385 KB

english, 2005

72

Strain relaxation properties of InAs[sub y]P[sub 1−y] metamorphic materials grown on InP substrates

Hudait, Mantu K., Lin, Y., Ringel, S. A.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 1.64 MB

english, 2009

73

Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

Rajamohanan, Bijesh, Mohata, Dheeraj, Zhu, Yan, Hudait, Mantu, Jiang, Zhengping, Hollander, Matthew, Klimeck, Gerhard, Datta, Suman

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 3.19 MB

english, 2014

74

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - 80nm In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 Composite channel HEMT with an fT of 280GHz

Liu, D., Hudait, M., Lin, Y., Ringel, S. A., Lu, W.

Year:

2007

Language:

english

File:

PDF, 98 KB

english, 2007

75

Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

M. K. Hudait, S. B. Krupanidhi

Year:

2001

Language:

english

File:

PDF, 651 KB

english, 2001

76

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Zhu, Y., Jain, N., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, A. K., Hudait, M. K.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.36 MB

english, 2012

77

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

Zhu, Y., Jain, N., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, A. K., Hudait, M. K.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.78 MB

english, 2013

78

Zn incorporation and band gap shrinkage in p-type GaAs

Hudait, Mantu Kumar, Modak, Prasanta, Hardikar, Shyam, Krupanidhi, S. B.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 419 KB

english, 1997

79

Photoluminescence studies on Si-doped GaAs/Ge

Hudait, M. K., Modak, P., Hardikar, S., Krupanidhi, S. B.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 397 KB

english, 1998

80

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Zhu, Y., Jain, N., Vijayaraghavan, S., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, W. K., Monsegue, N., Hudait, M. K.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 4.45 MB

english, 2012

81

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Zhu, Y., Jain, N., Vijayaraghavan, S., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, Amy K., Monsegue, N., Hudait, M. K.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 2.70 MB

english, 2012

82

Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

Jain, N., Zhu, Y., Maurya, D., Varghese, R., Priya, S., Hudait, M. K.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.77 MB

english, 2014

83

[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - Fermi level unpinning of GaSb(100) using Plasma Enhanced ALD Al2O3 dielectric

Ali, A., Madan, H. S., Kirk, A. P., Wallace, R.M., Zhao, D. A., Mourey, D. A., Hudait, M., Jackson, T. N., Bennett, B. R., Boos, J. B., Datta, S.

Year:

2010

Language:

english

File:

PDF, 2.08 MB

english, 2010

84

Carrier compensation and scattering mechanisms in Si-doped InAs[sub y]P[sub 1−y] layers grown on InP substrates using intermediate InAs[sub y]P[sub 1−y] step-graded buffers

Hudait, M. K., Lin, Y., Sinha, P. M., Lindemuth, J. R., Ringel, S. A.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 734 KB

english, 2006

85

Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

Hudait, Mantu K., Zhu, Yan

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 2.27 MB

english, 2013

86

X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100), (110), and (111)Ge

Zhu, Yan, Jain, Nikhil, Hudait, Mantu K., Maurya, Deepam, Varghese, Ronnie, Priya, Shashank

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2014

Language:

english

File:

PDF, 5.05 MB

english, 2014

87

Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts

Tivarus, C., Pelz, J. P., Hudait, M. K., Ringel, S. A.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 428 KB

english, 2005

88

Erratum: “High-quality InAs[sub y]P[sub 1−y] step-graded buffer by molecular-beam epitaxy” [Appl. Phys. Lett. 82, 3212 (2003)]

Hudait, M. K., Lin, Y., Wilt, D. M., Wu, Feng, Speck, J. S., Tivarus, C. A., Heller, E. R., Pelz, J. P., Ringel, S. A.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 203 KB

english, 2003

89

[IEEE Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002 - New Orleans, LA, USA (19-24 May 2002)] Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. - Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates

Andre, C.L., Khan, A., Gonzalez, M., Hudait, M.K., Fitzgerald, E.A., Carlin, J.A., Currie, M.T., Leitz, C.W., Langdo, T.A., Clark, E.B., Wilt, D.M., Ringel, S.A.

Year:

2002

Language:

english

File:

PDF, 333 KB

english, 2002

90

[IEEE 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings - Canberra, ACT, Australia (8-11 Dec. 1996)] 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings - Structural and electrical properties of undoped GaAs grown by MOCVD

Modak, P., Kumar Hudait, M., Hardikar, S., Krupanidhi, S.B.

Year:

1996

Language:

english

File:

PDF, 457 KB

english, 1996

91

[IEEE 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) - Austin, TX, USA (2012.06.3-2012.06.8)] 2012 38th IEEE Photovoltaic Specialists Conference - Design of metamorphic dual-junction InGaP/GaAs solar cell on Si with efficiency greater than 29% using finite element analysis

Jain, Nikhil, Hudait, Mantu K.

Year:

2012

Language:

english

File:

PDF, 669 KB

english, 2012

92

Design and Modeling of Metamorphic Dual-Junction InGaP/GaAs Solar Cells on Si Substrate for Concentrated Photovoltaic Application

Jain, Nikhil, Hudait, Mantu K.

Journal:

IEEE Journal of Photovoltaics

Year:

2014

Language:

english

File:

PDF, 576 KB

english, 2014

93

[IEEE 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) - Denver, CO, USA (2014.6.8-2014.6.13)] 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) - Performance evaluation of heterogeneously integrated 3J InGaP/GaAs/Si tandem solar cells on Si substrate for concentrated photovoltaics

Jain, Nikhil, Zhu, Yan, Clavel, Michael, Hudait, Mantu

Year:

2014

Language:

english

File:

PDF, 1.29 MB

english, 2014

94

[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

Mohata, D. K., Bijesh, R., Zhu, Y., Hudait, M. K., Southwick, R., Chbili, Z., Gundlach, D., Suehle, J., Fastenau, J. M., Loubychev, D., Liu, A. K., Mayer, T. S., Narayanan, V., Datta, S.

Year:

2012

Language:

english

File:

PDF, 570 KB

english, 2012

95

Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

Zhu, Yan, Hudait, Mantu K., Mohata, Dheeraj K., Rajamohanan, Bijesh, Datta, Suman, Lubyshev, Dmitri, Fastenau, Joel M., Liu, Amy K.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 2.98 MB

english, 2013

96

(Invited) Heterogeneously Integrated III-V on Silicon for Future Nanoelectronics

Journal:

ECS Transactions

Year:

2012

Language:

english

File:

PDF, 170 KB

english, 2012

97

Heterointerface Engineering of Broken-Gap InAs/GaSb Multilayer Structures

Liu, Jheng-Sin, Zhu, Yan, Goley, Patrick S., Hudait, Mantu K.

Journal:

ACS Applied Materials & Interfaces

Year:

2015

Language:

english

File:

PDF, 4.06 MB

english, 2015

98

Mixed-anion GaAs 1− y Sb y graded buffer heterogeneously integrated on Si by molecular beam epitaxy

Hudait, Mantu K., Zhu, Yan, Goley, Patrick, Clavel, Michael, Jain, Nikhil

Journal:

Applied Physics Express

Year:

2015

Language:

english

File:

PDF, 145 KB

english, 2015

99

The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE

Wong, Yuen-Yee, Chang, Edward Yi, Yang, Tsung-Hsi, Chang, Jet-Rung, Ku, Jui-Tai, Hudait, Mantu K., Chou, Wu-Ching, Chen, Micheal, Lin, Kung-Liang

Journal:

Journal of The Electrochemical Society

Year:

2010

Language:

english

File:

PDF, 394 KB

english, 2010

100

(Invited) Integration of High- Dielectrics on Epitaxial (100), (110) and (111) Germanium for Multifunctional Devices

Hudait, M. K., Zhu, Y., Maurya, D., Priya, S.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 313 KB

english, 2013

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