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1

Electrical properties and strain distribution of Ge suspended structures

Shah, V.A., Rhead, S.D., Finch, J., Myronov, M., Reparaz, J.S., Morris, R.J., Wilson, N.R., Kachkanov, V., Dolbnya, I.P., Halpin, J.E., Patchett, D., Allred, P., Colston, G., Sawhney, K.J.S., Sotomayo

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.83 MB

english, 2015

2

High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.38 MB

english, 2011

3

Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)

V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 1.46 MB

english, 2011

4

Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration

V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 567 KB

english, 2012

5

Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

Van Huy Nguyen, A. Dobbie, M. Myronov, D.J. Norris, T. Walther, D.R. Leadley

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 851 KB

english, 2012

6

Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon

Lever, L., Hu, Y., Myronov, M., Liu, X., Owens, N., Gardes, F. Y., Marko, I. P., Sweeney, S. J., Ikonić, Z., Leadley, D. R.

Journal:

Year:

2011

Language:

english

File:

PDF, 204 KB

english, 2011

7

Mobility spectrum computational analysis using a maximum entropy approach

Kiatgamolchai, S., Myronov, M., Mironov, O. A., Kantser, V. G., Parker, E. H. C., Whall, T. E.

Journal:

Physical Review E

Year:

2002

Language:

english

File:

PDF, 104 KB

english, 2002

8

Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping

Myronov, M., Sawano, K., Shiraki, Y.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 487 KB

english, 2006

9

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

Wongwanitwattana, Chalermwat, Shah, Vishal A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry, Leadley, David R.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2014

Language:

english

File:

PDF, 803 KB

english, 2014

10

Ultra high hole mobilities in a pure strained Ge quantum well

Mironov, O.A., Hassan, A.H.A., Morris, R.J.H., Dobbie, A., Uhlarz, M., Chrastina, D., Hague, J.P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I.B., Helm, M., Drachenko, O., Myronov, M., Le

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 786 KB

english, 2014

11

[IEEE 2013 IEEE 10th International Conference on Group IV Photonics (GFP) - Seoul, Korea (South) (2013.08.28-2013.08.30)] 10th International Conference on Group IV Photonics - Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths

Intermite, G., Warburton, R.E., Myronov, M., Allred, P., Leadley, D.R., Gallacher, K., Paul, D.J., Pilgrim, N.J., Lever, L.J.M., Ikonic, Z., Kelsall, R.W., Buller, G.S.

Year:

2013

Language:

english

File:

PDF, 439 KB

english, 2013

12

[IEEE 2013 IEEE 10th International Conference on Group IV Photonics (GFP) - Seoul, Korea (South) (2013.08.28-2013.08.30)] 10th International Conference on Group IV Photonics - Strained germanium nanostructures on silicon emitting at >2.2 µm wavelength

Velha, Philippe, Dumas, Derek C., Gallacher, Kevin, Millar, Ross, Myronov, Maksym, Leadley, David R., Paul, Douglas J.

Year:

2013

Language:

english

File:

PDF, 488 KB

english, 2013

13

[IEEE 2011 IEEE 8th International Conference on Group IV Photonics (GFP) - London, United Kingdom (2011.09.14-2011.09.16)] 8th IEEE International Conference on Group IV Photonics - Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures

Lever, L., Hu, Y., Myronov, M., Liu, X., Owens, N., Gardes, F. Y., Marko, I. P., Sweeney, S. J., Ikonic, Z., Leadley, D. R., Reed, G. T., Kelsall, R. W.

Year:

2011

Language:

english

File:

PDF, 108 KB

english, 2011

14

[IEEE 2012 IEEE 9th International Conference on Group IV Photonics (GFP) - San Diego, CA, USA (2012.08.29-2012.08.31)] The 9th International Conference on Group IV Photonics (GFP) - Tuning the electroluminescence of n-Ge LEDs using process induced strain

Velha, Philippe, Gallacher, Kevin, Dumas, Derek, Paul, Douglas J., Myronov, Maksym, Leadley, David R.

Year:

2012

Language:

english

File:

PDF, 784 KB

english, 2012

15

[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA ()] 2006 International SiGe Technology and Device Meeting - Enhancement of Hole Mobility and Carrier Density in Ge Quantum Well SiGe Heterostructure via Implementation of Double-Sides Doping

Myronov, M., Sawano, K., Shiraki, Y.

Year:

2006

Language:

english

File:

PDF, 2.30 MB

english, 2006

16

Reduced 1/f noise in p-Si[sub 0.3]Ge[sub 0.7] metamorphic metal–oxide–semiconductor field-effect transistor

Myronov, M., Mironov, O. A., Durov, S., Whall, T. E., Parker, E. H. C., Hackbarth, T., Höck, G., Herzog, H.-J., König, U.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 266 KB

english, 2004

17

Accurate Reactive Ion Etching of Si, Ge and P Doped Ge in an SF6-O2 Radio-Frequency Plasma

Wongwanitwattana, C., Shah, V. A., Myronov, M., Parker, E. H. C., Whall, T. E., Leadley, D. R.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 559 KB

english, 2013

18

[IEEE 2014 IEEE 11th International Conference on Group IV Photonics - Paris, France (2014.8.27-2014.8.29)] 11th International Conference on Group IV Photonics (GFP) - Ge/SiGe quantum confined Stark effect modulators with low voltage swing at λ= 1550 nm

Dumas, D. C. S., Gallacher, K., Rhead, S., Myronov, M., Leadley, D. R., Paul, D. J.

Year:

2014

Language:

english

File:

PDF, 620 KB

english, 2014

19

Evidence of strong spin–orbit interaction in strained epitaxial germanium

Morrison, C., Foronda, J., Wiśniewski, P., Rhead, S.D., Leadley, D.R., Myronov, M.

Journal:

Thin Solid Films

Year:

2016

Language:

english

File:

PDF, 866 KB

english, 2016

20

[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA (15-17 May 2006)] 2006 International SiGe Technology and Device Meeting - Enhancement of Hole Mobility and Carrier Density in Ge Quantum Well SiGe Heterostructure via Implementation of Double-Sides Doping

Myronov, M., Sawano, K., Shiraki, Y.

Year:

2006

Language:

english

File:

PDF, 2.30 MB

english, 2006

21

Strained germanium for applications in spintronics

Morrison, Christopher, Myronov, Maksym

Journal:

physica status solidi (a)

Year:

2016

Language:

english

File:

PDF, 1.82 MB

english, 2016

22

[IEEE 2017 IEEE 14th International Conference on Group IV Photonics (GFP) - Berlin, Germany (2017.8.23-2017.8.25)] 2017 IEEE 14th International Conference on Group IV Photonics (GFP) - Tensile strained GeSn mid-infrared light emitters

Millar, R. W., Dumas, D. C. S., Gallacher, K., Jahandar, P., Myronov, M., Paul, D. J.

Year:

2017

Language:

english

File:

PDF, 1.51 MB

english, 2017

23

Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells

Failla, M, Keller, J, Scalari, G, Maissen, C, Faist, J, Reichl, C, Wegscheider, W, Newell, O J, Leadley, D R, Myronov, M, Lloyd-Hughes, J

Journal:

New Journal of Physics

Year:

2016

Language:

english

File:

PDF, 3.29 MB

english, 2016

24

N-type doped amorphous Si thin film on a surface of rough current collector as anode for Li-ion batteries

Mukanova, Aliya, Nurpeissova, Arailym, Zharbossyn, Assem, Kim, Sung-Soo, Myronov, Maksym, Bakenov, Zhumabay

Journal:

Materials Today: Proceedings

Year:

2018

Language:

english

File:

PDF, 955 KB

english, 2018

25

Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T

O.A. Mironov, M. Myronov, S. Durov, O. Drachenko, J. Leotin

Journal:

Physica B: Condensed Matter

Year:

2004

Language:

english

File:

PDF, 446 KB

english, 2004

26

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

M Myronov, S Durov, O.A Mironov, E.H.C Parker, T.E Whall, T Hackbarth, G Höck, H.-J Herzog, U König

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 166 KB

english, 2004

27

Very thin, high Ge content Si0.3Ge0.7 relaxed buffer grown by MBE on SOI(0 0 1) substrate

M. Myronov, Y. Shiraki

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 625 KB

english, 2007

28

Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

M. Myronov, Xue-Chao Liu, A. Dobbie, D.R. Leadley

Journal:

Journal of Crystal Growth

Year:

2011

Language:

english

File:

PDF, 474 KB

english, 2011

29

The sub-micrometer thickness n-InSb/i-GaAs epilayers for magnetoresistor applications at room temperatures of operation

O.A. Mironov, M. Myronov, S. Durov, V.T. Igumenov, V.M. Konstantinov, V.V. Paramonov, T. Zhang, L.F. Cohen

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 308 KB

english, 2004

30

Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, K.M. Itoh

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2008

Language:

english

File:

PDF, 196 KB

english, 2008

31

Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

M. Myronov, Y. Shiraki, T. Mouri, K.M. Itoh

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 254 KB

english, 2008

32

Application of high-resolution X-ray diffraction to study strain status in Si1−xGex/Si1−yGey/Si (001) heterostructures

K.D. Chtcherbatchev, A.D. Sequeira, N. Franco, N.P. Barradas, M. Myronov, O.A. Mironov, E.H.C. Parker

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 154 KB

english, 2002

33

Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov, A. Rozheshchenko, T.E. Whall

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 124 KB

english, 2003

34

High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates

A. Zhylik, F. Rinaldi, M. Myronov, K. Saito, S. Menzel, A. Dobbie, D. R. Leadley, T. Ulyanenkova, I. D. Feranchuk, A. Ulyanenkov

Journal:

physica status solidi (a)

Year:

2011

Language:

english

File:

PDF, 866 KB

english, 2011

35

Low-temperature conductance mechanisms in p-Si/SiGe heterostructures in high magnetic fields

I. L. Drichko, A. M. Dyakonov, I. Yu. Smirnov, A. V. Suslov, Y. M. Galperin, V. Vinokur, M. Myronov, O. A. Mironov

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 539 KB

english, 2008

36

Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition

M. Myronov, V. A. Shah, A. Dobbie, Xue-Chao Liu, Van H. Nguyen, D. R. Leadley, E. H. C. Parker

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 501 KB

english, 2011

37

Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity

Xue-Chao Liu, M. Myronov, A. Dobbie, Van H. Nguyen, D.R. Leadley

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 939 KB

english, 2011

38

Static and high-frequency hole transport inp-Si/SiGe heterostructures in the extreme quantum limit

I. L. Drichko, I. Yu. Smirnov, A. V. Suslov, Yu. M. Gal’perin, V. M. Vinokur, M. Myronov, O. A. Mironov

Journal:

Year:

2007

Language:

english

File:

PDF, 257 KB

english, 2007

39

O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells

R. J. H. Morris, M. G. Dowsett, R. Beanland, A. Dobbie, M. Myronov, D. R. Leadley

Journal:

Surface and Interface Analysis

Year:

2012

Language:

english

File:

PDF, 1.72 MB

english, 2012

40

Low-Frequency Noise Characterization of Strained Germanium pMOSFETs

Simoen, E., Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A., Myronov, M., Whall, T.E., Leadley, D.R., Meuris, M., Hoffmann, T., Claeys, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 984 KB

english, 2011

41

Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Dobbie, A., Myronov, M., Morris, R. J. H., Hassan, A. H. A., Prest, M. J., Shah, V. A., Parker, E. H. C., Whall, T. E., Leadley, D. R.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1002 KB

english, 2012

42

Temperature dependence of transport properties of high mobility holes in Ge quantum wells

Myronov, M., Irisawa, T., Koh, S., Mironov, O. A., Whall, T. E., Parker, E. H. C., Shiraki, Y.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 420 KB

english, 2005

43

The Stranski-Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy

Walther, Thomas, Norris, David J., Qiu, Yang, Dobbie, Andrew, Myronov, Maksym, Leadley, David R.

Journal:

phys stat sol (a)

Year:

2013

Language:

english

File:

PDF, 666 KB

english, 2013

44

heterostructures: From metal through hopping insulator to Wigner glass

Drichko, I. L., Dyakonov, A. M., Smirnov, I. Yu., Suslov, A. V., Galperin, Y. M., Vinokur, V., Myronov, M., Mironov, O. A., Leadley, D. R.

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 632 KB

english, 2008

45

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Silicon Photonics VIII - Optical modulation using the silicon platform

Gardes, F. Y., Thomson, D., Hu, Y., Reed, G. T., O'Faolain, L., Debnath, K., Krauss, T. F., Fedeli, J M., Lever, L., Kelsall, R. W., Ikonic, Z., Liu, Xue-Chao, Myronov, M., Leadley, D. R., Kubby, Joel

Year:

2013

Language:

english

File:

PDF, 299 KB

english, 2013

46

SPIE Proceedings [SPIE Photonics Asia - Beijing, China (Monday 5 November 2012)] Nanophotonics and Micro/Nano Optics - High performance silicon optical modulators

Reed, G. T., Thomson, D. J., Gardes, F. Y., Hu, Y., Owens, N., Debnath, K., O’Faolain, L., Krauss, T. F., Lever, L., Ikonic, Z., Kelsall, R. W., Myronov, M., Leadley, D. R., Marko, I. P., Sweeney, S.

Year:

2012

Language:

english

File:

PDF, 3.13 MB

english, 2012

47

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Wirths, S., Tiedemann, A. T., Ikonic, Z., Harrison, P., Holländer, B., Stoica, T., Mussler, G., Myronov, M., Hartmann, J. M., Grützmacher, D., Buca, D., Mantl, S.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.96 MB

english, 2013

48

Characterization of SiGe thin films using a laboratory X-ray instrument

Ulyanenkova, Tatjana, Myronov, Maksym, Benediktovitch, Andrei, Mikhalychev, Alexander, Halpin, John, Ulyanenkov, Alex

Journal:

Journal of Applied Crystallography

Year:

2013

Language:

english

File:

PDF, 472 KB

english, 2013

49

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

Shah, V. A., Dobbie, A., Myronov, M., Fulgoni, D. J. F., Nash, L. J., Leadley, D. R.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 429 KB

english, 2008

50

[IEEE 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013) - Coventry (2013.3.19-2013.3.21)] 2013 14th International Conference on Ultimate Integration on Silicon (ULIS) - Pure Ge quantum well with high hole mobility

Hassan, A. H. A., Mironov, O. A., Feher, A., Cizmar, E., Gabani, S., Morris, R. J. H., Dobbie, A., Shah, V. A., Myronov, M., Berkutov, I. B., Andrievskii, V. V., Leadley, D. R.

Year:

2013

Language:

english

File:

PDF, 872 KB

english, 2013