Nobuyuki Ikarashi: search on Z-Library

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1

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N 2 partial pressure annealing: Transmission electron microscopy analysis

Iwata, Kenji, Sakurai, Hideki, Arai, Shigeo, Nakashima, Takuya, Narita, Tetsuo, Kataoka, Keita, Bockowski, Michal, Nagao, Masaharu, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

Journal:

Journal of Applied Physics

Year:

2020

Language:

english

File:

PDF, 2.73 MB

english, 2020

2

[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Impacts of high temperature annealing above 1400 Â° C under N 2 overpressure to activate acceptors in Mg-implanted GaN

Sakurai, Hideki, Narita, Tetsuo, Hirukawa, Kazufumi, Yamada, Shinji, Koura, Akihiko, Kataoka, Keita, Horita, Masahiro, Ikarashi, Nobuyuki, Bockowski, Michal, Suda, Jun, Kachi, Tetsu

Year:

2020

File:

PDF, 2.10 MB

2020

3

Role of Ge surface segregation in Si/Ge interfacial ordering: Interface formation on a monohydride surface

Ikarashi, Nobuyuki, Oshiyama, Atsushi, Sakai, Akira, Tatsumi, Toru

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 616 KB

english, 1995

4

Mass and momentum transfer characteristics in and downstream of 90° elbow

Ikarashi, Yuya, Taguchi, Shoichi, Yamagata, Takayuki, Fujisawa, Nobuyuki

Journal:

International Journal of Heat and Mass Transfer

Year:

2017

Language:

english

File:

PDF, 2.63 MB

english, 2017

5

Progress on and challenges of p-type formation for GaN power devices

Narita, Tetsuo, Yoshida, Hikaru, Tomita, Kazuyoshi, Kataoka, Keita, Sakurai, Hideki, Horita, Masahiro, Bockowski, Michal, Ikarashi, Nobuyuki, Suda, Jun, Kachi, Tetsu, Tokuda, Yutaka

Journal:

Journal of Applied Physics

Year:

2020

File:

PDF, 3.02 MB

2020

6

〈110〉 HREM of interfacial structures in semiconductor hetero-structures

Ikarashi, Nobuyuki, Ishida, Koichi

Journal:

Microscopy Research and Technique

Year:

1998

Language:

english

File:

PDF, 1.12 MB

english, 1998

7

Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction

Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 218 KB

english, 2000

8

Photoluminescence spectra of Si1-xGex/Si quantum well structures grown by three different techniques

Koichi Terashima, Michio Tajima, Nobuyuki Ikarashi, Taeko Niino, Masayuki Hiroi, Toru Tatsumi

Journal:

Journal of Electronic Materials

Year:

1992

Language:

english

File:

PDF, 415 KB

english, 1992

9

Impact of Crystalline Phase of Ni-FUSI Gate Electrode on Bias Temperature Instability and Gate Dielectric Breakdown of HfSiON MOSFETs

Masayuki Terai, Takashi Onizawa, Setsu Kotsuji, Nobuyuki Ikarashi, Akio Toda, Shinji Fujieda, Hirohito Watanabe

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 534 KB

english, 2007

10

Spatially-resolved valence-electron energy-loss spectroscopy of Zr-oxide and Zr-silicate films

Ikarashi, Nobuyuki, Manabe, Kenzo

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 330 KB

english, 2002

11

Determining the relationship between local lattice strain and slip systems of dislocations around shallow trench isolation by convergent-beam electron diffraction

Toda, Akio, Ikarashi, Nobuyuki, Ono, Haruhiko, Okonogi, Kensuke

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 283 KB

english, 2002

12

High-resolution transmission electron microscopy of vicinal AlAs/GaAs interfacial structure

Ikarashi, Nobuyuki, Baba, Toshio, Ishida, Koichi

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 793 KB

english, 1993

13

High-resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams

Ikarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 674 KB

english, 1989

14

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates

Terashima, Koichi, Manabe, Kenzo, Takahashi, Kensuke, Watanabe, Koji, Ogura, Takashi, Saitoh, Motofumi, Oshida, Makiko, Ikarashi, Nobuyuki, Tatsumi, Toru, Watanabe, Hirohito

Year:

2006

Language:

english

File:

PDF, 384 KB

english, 2006

15

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Direct two-dimensional electrostatic potential cross-sectional mapping of sub-30-nm MOSFET under operation mode using electron holography

Ikarashi, Nobuyuki, Takeda, Hiroshi, Yako, Koichi, Hane, Masami

Year:

2011

Language:

english

File:

PDF, 701 KB

english, 2011

16

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention

Sunamura, Hiroshi, Ikarashi, Taeko, Morioka, Ayuka, Kotsuji, Setsu, Oshida, Makiko, Ikarashi, Nobuyuki, Fujieda, Shinji, Watanabe, Hirohito

Year:

2006

Language:

english

File:

PDF, 552 KB

english, 2006

17

[IEEE 2006 IEEE International Reliability Physics Symposium Proceedings - San Jose, CA, USA (2006.03.26-2006.03.30)] 2006 IEEE International Reliability Physics Symposium Proceedings - Impact of Crystalline Phase of Ni-Full-Silicide Gate Electrode on TDDB Reliability of HfSiON Gate Stacks

Onizawa, Takashi, Terai, Masayuki, Toda, Akio, Oshida, Makiko, Ikarashi, Nobuyuki, Hase, Takashi, Fujieda, Shinji, Watanabe, Hirohito

Year:

2006

Language:

english

File:

PDF, 493 KB

english, 2006

18

High-resolution electron microscopy of growth interruption effect on AlAs/GaAs interfacial structure during molecular beam epitaxy

Ikarashi, Nobuyuki, Tanaka, Masaaki, Sakaki, Hiroyuki, Ishida, Koichi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 723 KB

english, 1992

19

Ti–O coordination at a Pb(Zr,Ti)O[sub 3]/Pt interface annealed in a hydrogen-containing ambient analyzed using spatially resolved electron energy-loss spectroscopy

Ikarashi, Nobuyuki, Hosoi, Nobuki

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 426 KB

english, 1999

20

High-resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection

Ikarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi, Motohisa, Junich, Sakaki, Hiroyuki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 682 KB

english, 1990

21

Electronic structure analysis of Zr silicate and Hf silicate films by using spatially resolved valence electron energy-loss spectroscopy

Ikarashi, Nobuyuki, Manabe, Kenzo

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 611 KB

english, 2003

22

Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices

Toda, Akio, Ikarashi, Nobuyuki, Ono, Haruhiko, Ito, Shinya, Toda, Takeshi, Imai, Kiyotaka

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 439 KB

english, 2001

23

High-resolution transmission electron microscopy of an atomic structure at a Si(001) oxidation front

Ikarashi, Nobuyuki, Watanabe, Koji, Miyamoto, Yoshiyuki

Journal:

Physical Review B

Year:

2000

Language:

english

File:

PDF, 411 KB

english, 2000

24

Spatially resolved electron energy-loss spectroscopy of an interfacial structure at a Ti thin film Cu interconnect

Ikarashi, Nobuyuki, Ueki, Makoto, Hiroi, Masayuki

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 468 KB

english, 2003

25

La–silicate gate dielectrics fabricated by solid phase reaction between La metal and SiO[sub 2] underlayers

Watanabe, Heiji, Ikarashi, Nobuyuki, Ito, Fuminori

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 502 KB

english, 2003

26

High-quality HfSi[sub x]O[sub y] gate dielectrics fabricated by solid phase interface reaction between physical-vapor-deposited metal–Hf and SiO[sub 2] underlayer

Watanabe, Heiji, Saitoh, Motofumi, Ikarashi, Nobuyuki, Tatsumi, Toru

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 312 KB

english, 2004

27

Formation mechanism of interfacial Si–oxide layers during postannealing of Ta[sub 2]O[sub 5]/Si

Ono, Haruhiko, Hosokawa, Yumiko, Ikarashi, Taeko, Shinoda, Keisuke, Ikarashi, Nobuyuki, Koyanagi, Ken-ichi, Yamaguchi, Hiromu

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 503 KB

english, 2001

28

Electron holography analysis of a shallow junction for planar-bulk metal-oxide-semiconductor field-effect transistors approaching the scaling limit

Ikarashi, Nobuyuki, Ikezawa, Takeshi, Uejima, Kazuya, Fukai, Toshinori, Miyamura, Makoto, Toda, Akio, Hane, Masami

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 557 KB

english, 2008

29

Native oxides on Si surfaces of deep-submicron contact-hole bottoms

Aoto, Nahomi, Nakamori, Masaharu, Yamasaki, Shinya, Hada, Hiromitsu, Ikarashi, Nobuyuki, Ishida, Koichi, Teraoka, Yuden, Nishiyama, Iwao

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.33 MB

english, 1995

30

Thermal decomposition of ZrO[sub 2]/SiO[sub 2] bilayer on Si(001) caused by void nucleation and its lateral growth

Watanabe, Heiji, Ikarashi, Nobuyuki

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 467 KB

english, 2002

31

Analytical transmission electron microscopy of hydrogen-induced degradation in ferroelectric Pb(Zr, Ti)O[sub 3] on a Pt electrode

Ikarashi, Nobuyuki

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 329 KB

english, 1998

32

Atomic structure of a Ni diffused Si (001) surface layer: Precursor to formation of NiSi[sub 2] at low temperature

Ikarashi, Nobuyuki

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 583 KB

english, 2010

33

Al diffusion into GaAs from monatomic AlAs layers investigated by localized vibrational modes

Ono, Haruhiko, Ikarashi, Nobuyuki, Baba, Toshio

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 344 KB

english, 1995

34

Atomic structures at a Si–nitride/Si(001) interface

Ikarashi, Nobuyuki, Watanabe, Koji, Miyamoto, Yoshiyuki

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 643 KB

english, 2001

35

Silicide formation process of Pt added Ni at low temperature: Control of NiSi2 formation

Ikarashi, Nobuyuki, Masuzaki, Koji

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.63 MB

english, 2011

36

Thermal stability of a HfO[sub 2]∕SiO[sub 2] interface

Ikarashi, Nobuyuki, Watanabe, Koji, Masuzaki, Koji, Nakagawa, Takashi

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 396 KB

english, 2006

37

High-Resolution Transmission Electron Microscopy of AlAs/GaAs Interfacial Structure in the Projection

Ikarashi, Nobuyuki, Tanaka, Masaaki, Baba, Toshio, Sakaki, Hiroyuki, Ishida, Koichi

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 3.08 MB

1993

38

In-situ electron holography of carrier accumulation at SiO 2 /InGaZnO 4 interface

Ikarashi, Nobuyuki, Kaneko, Kisyoh, Saitoh, Motofumi, Takeda, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 118 KB

english, 2014

39

Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low- k Films

Kume, Ippei, Ueki, Makoto, Inoue, Naoya, Kawahara, Jun, Ikarashi, Nobuyuki, Furutake, Naoya, Saitoh, Shinobu, Hayashi, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 297 KB

english, 2011

40

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Analysis of Electronic Structure of High-K Films using STEM-EELS

Ikarashi, Nobuyuki, Manabe, Kenzo, Takahashi, Kensuke, Saitoh, Motofumi

Year:

2006

Language:

english

File:

PDF, 1.06 MB

english, 2006

41

Effects of Selecting Channel Direction in Improving Performance of Sub-100 nm MOSFETs Fabricated on (110) Surface Si Substrate

Nakamura, Hidetatsu, Ezaki, Tatsuya, Iwamoto, Toshiyuki, Togo, Mitsuhiro, Ikezawa, Takeo, Ikarashi, Nobuyuki, Hane, Masami, Yamamoto, Toyoji

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 788 KB

english, 2004

42

Suppression of Surface Roughening on Strained Si/SiGe Layers by Lowering Surface Stress

Ikarashi, Nobuyuki, Tatsumi, Toru

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 1.03 MB

1997

43

Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal–Oxide–Semiconductor Field-Effect Transistors

Ikarashi, Nobuyuki, Oshida, Makiko, Miyamura, Makoto, Saitoh, Motofumi, Mineji, Akira, Shishiguchi, Seiichi

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 316 KB

english, 2008

44

Photoluminescence of Si 1- x Ge x /Si Quantum Well Structures

Terashima, Koichi, Tajima, Michio, Ikarashi, Nobuyuki, Niino, Taeko, Tatsumi, Toru

Journal:

Japanese Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 664 KB

english, 1991

45

Atomic Resolution TEM Images of the Au(001) Reconstructed Surface

Hasegawa, Tsuyoshi, Kobayashi, Kunio, Ikarashi, Nobuyuki, Takayanagi, Kunio, Yagi, Katsumichi

Journal:

Japanese Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 874 KB

english, 1986

46

Interfacial Atomic Structure Between Pt-Added NiSi and Si(001)

Ikarashi, Nobuyuki, Narihiro, Mitsuru, Hase, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 547 KB

english, 2011

47

Quantitative Characterization of Roughness at SiO 2 /Si Interfaces by Using Cross-sectional High-resolution Transmission Electron Microscopy

Ikarashi, Nobuyuki, Watanabe, Koji

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 672 KB

english, 2000

48

Spontaneous clearance of HCV accompanying hepatitis after liver transplantation

Kogiso, Tomomi, Hashimoto, Etsuko, Ikarashi, Yuichi, Kodama, Kazuhisa, Taniai, Makiko, Torii, Nobuyuki, Egawa, Hiroto, Yamamoto, Masakazu, Tokushige, Katsutoshi

Journal:

Clinical Journal of Gastroenterology

Year:

2015

Language:

english

File:

PDF, 3.70 MB

english, 2015

49

1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs

Saitoh, Motofumi, Terai, Masayuki, Ikarashi, Nobuyuki, Watanabe, Heiji, Fujieda, Shinji, Iwamoto, Toshiyuki, Ogura, Takashi, Morioka, Ayuka, Watanabe, Koji, Tatsumi, Toru, Watanabe, Hirohito

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 200 KB

english, 2005

50

Expression of hepatic cytochrome P450 in a mouse model of ulcerative colitis changes with pathological conditions

Kusunoki, Yoshiki, Ikarashi, Nobutomo, Matsuda, Shogo, Matsukawa, Yoshimi, Kitaoka, Satoshi, Kon, Risako, Tajima, Masataka, Wakui, Nobuyuki, Ochiai, Wataru, Machida, Yoshiaki, Sugiyama, Kiyoshi

Journal:

Journal of Gastroenterology and Hepatology

Year:

2015

Language:

english

File:

PDF, 955 KB

english, 2015