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1

Design and analysis of systems based on RF receivers with multiple carbon nanotube antennas

C. Emre Koksal, Eylem Ekici, Siddharth Rajan

Journal:

Nano Communication Networks

Year:

2010

Language:

english

File:

PDF, 989 KB

english, 2010

2

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Zhang, Yuewei, Jamal-Eddine, Zane, Akyol, Fatih, Bajaj, Sanyam, Johnson, Jared M., Calderon, Gabriel, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 882 KB

english, 2018

3

Demonstration of forward inter-band tunneling in GaN by polarization engineering

Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 850 KB

english, 2011

4

Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

Su, Ming, Chen, Chingchi, Rajan, Siddharth

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 751 KB

english, 2013

5

Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions

Lee, Edwin W., Ma, Lu, Nath, Digbijoy N., Lee, Choong Hee, Arehart, Aaron, Wu, Yiying, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.23 MB

english, 2014

6

Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF 4 -Treatment

Chu, Rongming, Poblenz, Christiane, Wong, Man Hoi, Dasgupta, Sansaptak, Rajan, Siddharth, Pei, Yi, Recht, Felix, Shen, Likun, Speck, James S., Mishra, Umesh K.

Journal:

Applied Physics Express

Year:

2008

Language:

english

File:

PDF, 120 KB

english, 2008

7

PPPs in road renovation and maintenance: a case study of the East Coast Road project

Rajan A., Thillai, Siddharth, R., Mukund, S.P.

Journal:

Journal of Financial Management of Property and Construction

Year:

2010

Language:

english

File:

PDF, 217 KB

english, 2010

8

Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors

Khurgin, Jacob B., Bajaj, Sanyam, Rajan, Siddharth

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 811 KB

english, 2016

9

Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates

Lee, Choong Hee, Krishnamoorthy, Sriram, O'Hara, Dante J., Brenner, Mark R., Johnson, Jared M., Jamison, John S., Myers, Roberto C., Kawakami, Roland K., Hwang, Jinwoo, Rajan, Siddharth

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 5.56 MB

english, 2017

10

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Bajaj, Sanyam, Shoron, Omor F., Park, Pil Sung, Krishnamoorthy, Sriram, Akyol, Fatih, Hung, Ting-Hsiang, Reza, Shahed, Chumbes, Eduardo M., Khurgin, Jacob, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.18 MB

english, 2015

11

Point and Extended Defects in Ultra Wide Band Gap β-Ga2O3 Interfaces

Johnson, Jared M, Krishnamoorthy, Sriram, Rajan, Siddharth, Hwang, Jinwoo

Journal:

Microscopy and Microanalysis

Year:

2017

Language:

english

File:

PDF, 796 KB

english, 2017

12

Current Status of Stem Cell Treatment for Type I Diabetes Mellitus

Kakkar, Anupama, Sorout, Ashima, Tiwari, Mahak, Shrivastava, Pallavi, Meena, Poonam, Saraswat, Sumit Kumar, Srivastava, Supriya, Datt, Rajan, Pandey, Siddharth

Journal:

Tissue Engineering and Regenerative Medicine

Year:

2018

Language:

english

File:

PDF, 906 KB

english, 2018

13

Breakdown characteristics of β-(Al0.22Ga0.78)2O3/ Ga2O3 field-plated modulation doped field effect transistors with SiNx passivation

Joishi, Chandan, Zhang, Yuewei, Xia, Zhanbo, Sun, Wenyuan, Arehart, Aaron R., Ringel, Steven, Lodha, Saurabh, Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.09 MB

english, 2019

14

All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors

Xue, Hao, Hwang, Seongmo, Razzak, Towhidur, Lee, Choonghee, Calderon Ortiz, Gabriel, Xia, Zhanbo, Hasan Sohel, Shahadat, Hwang, Jinwoo, Rajan, Siddharth, Khan, Asif, Lu, Wu

Journal:

Solid-State Electronics

Year:

2020

Language:

english

File:

PDF, 1.41 MB

english, 2020

15

Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors

Sohel, Shahadat H., Xie, Andy, Beam, Edward, Xue, Hao, Razzak, Towhidur, Bajaj, Sanyam, Campbell, Sherry, White, Donald, Wills, Kenneth, Cao, Yu, Lu, Wu, Rajan, Siddharth

Journal:

Applied Physics Express

Year:

2020

Language:

english

File:

PDF, 714 KB

english, 2020

16

High-permittivity dielectric edge termination for vertical high voltage devices

Lee, Hyun-Soo, Kalarickal, Nidhin Kurian, Rahman, Mohammad Wahidur, Xia, Zhanbo, Moore, Wyatt, Wang, Caiyu, Rajan, Siddharth

Journal:

Journal of Computational Electronics

Year:

2020

File:

PDF, 4.83 MB

2020

17

Improved quality nonpolar a -plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)

Bilge Imer, Matt Schmidt, Ben Haskell, Siddharth Rajan, Barry Zhong, Kwangchoong Kim, Feng Wu, Tom Mates, Stacia Keller, Umesh K. Mishra, Shuji Nakamura, James S. Speck, Steven P. DenBaars

Journal:

physica status solidi (a)

Year:

2008

Language:

english

File:

PDF, 436 KB

english, 2008

18

Electron transport in nitrogen-polar high electron mobility transistors

David F. Brown, Siddharth Rajan, Stacia Keller, Yun-Hao Hsieh, Steven P. DenBaars, Umesh K. Mishra

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 406 KB

english, 2009

19

Anaesthesia for direct laryngoscopy with propofol and fentanyl or sufentanil

Uma srivastava, Abhijeet Rajan Mishra, Siddharth Sharma, Dharmendra Kumar, Aditya Kumar, S. Saxena, Imran Khan

Journal:

Indian Journal of Otolaryngology and Head & Neck Surgery (Springer)

Year:

2008

Language:

english

File:

PDF, 512 KB

english, 2008

20

Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence

Carnevale, Santino D., Kent, Thomas F., Phillips, Patrick J., Mills, Michael J., Rajan, Siddharth, Myers, Roberto C.

Journal:

Year:

2012

Language:

english

File:

PDF, 436 KB

english, 2012

21

Polarization engineered 1-dimensional electron gas arrays

Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.57 MB

english, 2012

22

Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization

Sung Park, Pil, Nath, Digbijoy N., Krishnamoorthy, Sriram, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.50 MB

english, 2012

23

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

Hyeongnam Kim, Digbijoy Nath, Siddharth Rajan, Wu Lu

Journal:

Journal of Electronic Materials

Year:

2013

Language:

english

File:

PDF, 404 KB

english, 2013

24

N-polar GaNâAlGaNâGaN high electron mobility transistors

Rajan, Siddharth, Chini, Alessandro, Wong, Man Hoi, Speck, James S., Mishra, Umesh K.

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 995 KB

english, 2007

25

Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications

Ramesh, Prashanth, Krishnamoorthy, Sriram, Rajan, Siddharth, Washington, Gregory N

Journal:

Smart Materials and Structures

Year:

2012

Language:

english

File:

PDF, 2.09 MB

english, 2012

26

Molecular beam epitaxy of N-polar InGaN

Nath, Digbijoy N., GuÌr, Emre, Ringel, Steven A., Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 693 KB

english, 2010

27

Polarization-engineered GaN/InGaN/GaN tunnel diodes

Krishnamoorthy, Sriram, Nath, Digbijoy N., Akyol, Fatih, Park, Pil Sung, Esposto, Michele, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 533 KB

english, 2010

28

MBE-Grown AlGaN/GaN HEMTs on SiC

RAJAN, SIDDHARTH, CHAKRABORTY, ARPAN, MISHRA, UMESH K., POBLENZ, CHRISTIANE, WALTEREIT, PATRICK, SPECK, JAMES S.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 326 KB

english, 2004

29

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

Sung Park, Pil, Reddy, Kongara M., Nath, Digbijoy N., Yang, Zhichao, Padture, Nitin P., Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.27 MB

english, 2013

30

GdN Nanoisland-Based GaN Tunnel Junctions

Krishnamoorthy, Sriram, Kent, Thomas F., Yang, Jing, Park, Pil Sung, Myers, Roberto C., Rajan, Siddharth

Journal:

Year:

2013

Language:

english

File:

PDF, 1.28 MB

english, 2013

31

AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

Rajan, Siddharth, Xing, Huili, DenBaars, Steve, Mishra, Umesh K., Jena, Debdeep

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 349 KB

english, 2004

32

Large area single crystal (0001) oriented MoS2

Laskar, Masihhur R., Ma, Lu, Kannappan, Santhakumar, Sung Park, Pil, Krishnamoorthy, Sriram, Nath, Digbijoy N., Lu, Wu, Wu, Yiying, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 2.18 MB

english, 2013

33

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Esposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 581 KB

english, 2011

34

[IEEE 2012 70th Annual Device Research Conference (DRC) - University Park, PA, USA (2012.06.18-2012.06.20)] 70th Device Research Conference - Methods for attaining high interband tunneling current in III-Nitrides

Growden, Tyler A., Krishnamoorthy, Sriram, Nath, Digbijoy N., Ramesh, Anisha, Rajan, Siddharth, Berger, Paul R.

Year:

2012

Language:

english

File:

PDF, 649 KB

english, 2012

35

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

36

Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer

Chieh Kai Yang,, Roblin, Patrick, De Groote, Fabien, Ringel, Steven A, Rajan, Siddharth, Teyssier, Jean Pierre, Poblenz, Christiane, Yi Pei,, Speck, James, Mishra, Umesh K

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2010

Language:

english

File:

PDF, 1.52 MB

english, 2010

37

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Moetakef, Pouya, Cain, Tyler A., Ouellette, Daniel G., Zhang, Jack Y., Klenov, Dmitri O., Janotti, Anderson, Van de Walle, Chris G., Rajan, Siddharth, Allen, S. James, Stemmer, Susanne

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 1.24 MB

english, 2011

38

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

Stemmer, Susanne, Chobpattana, Varistha, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 973 KB

english, 2012

39

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

Hung, Ting-Hsiang, Park, Pil Sung, Krishnamoorthy, Sriram, Nath, Digbijoy N., Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 1.24 MB

english, 2014

40

Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures

Park, Pil Sung, Nath, Digbijoy N., Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 367 KB

english, 2012

41

Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

Waltereit, Patrick, Poblenz, Christiane, Rajan, Siddharth, Wu, Feng, Mishra, Umesh K., Speck, James S.

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 154 KB

english, 2004

42

[IEEE 2009 11th International Conference on Computer Modelling and Simulation - Cambridge, UK (2009.03.25-2009.03.27)] 2009 11th International Conference on Computer Modelling and Simulation - Improved-AntNet: ACO Routing Algorithm in Practice

Chandra, Satish, Shrivastava, Utkarsh, Vaish, Rajan, Dixit, Siddharth, Rana, Manisha

Year:

2009

Language:

english

File:

PDF, 260 KB

english, 2009

43

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - 1/f hopping noise in molybdenum disulphide

Wang, Yuji, Luo, Xinhang, Poehler, Scott A., Laskar, Masihhur R., Ma, Lu, Wu, Yiying, Rajan, Siddharth, Lu, Wu

Year:

2014

Language:

english

File:

PDF, 479 KB

english, 2014

44

Study of interface barrier of SiN[sub x]/GaN interface for nitrogen-polar GaN based high electron mobility transistors

Nidhi,, Rajan, Siddharth, Keller, Stacia, Wu, Feng, DenBaars, Steven P., Speck, James S., Mishra, Umesh K.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 358 KB

english, 2008

45

Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

Akyol, Fatih, Krishnamoorthy, Sriram, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.30 MB

english, 2013

46

Electron mobility in graded AlGaN alloys

Rajan, Siddharth, DenBaars, Steven P., Mishra, Umesh K., Xing, Huili (Grace), Jena, Debdeep

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 365 KB

english, 2006

47

Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates

Kolluri, Seshadri, Keller, Stacia, Brown, David, Gupta, Geetak, Mishra, Umesh K., Denbaars, Steven P., Rajan, Siddharth

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 655 KB

english, 2010

48

[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA (2011.06.20-2011.06.22)] 69th Device Research Conference - III-nitride tunnel diodes with record forward tunnel current density

Krishnamoorthy, Sriram, Park, Pil, Rajan, Siddharth

Year:

2011

Language:

english

File:

PDF, 440 KB

english, 2011

49

[IEEE 2007 International Workshop on Physics of Semiconductor Devices - Mumbai, India (2007.12.16-2007.12.20)] 2007 International Workshop on Physics of Semiconductor Devices - N-polar GaN Electronics

Rajan, Siddharth, Hsieh, Eric, Man Hoi Wong,, Keller, Stacia, DenBaars, Steve P., Speck, James S., Mishra, Umesh K.

Year:

2007

Language:

english

File:

PDF, 46 KB

english, 2007

50

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Lateral energy band engineering of Al2O3/III-nitride interfaces

Hung, Ting-Hsiang, Park, Pil Sung, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Rajan, Siddharth

Year:

2014

Language:

english

File:

PDF, 973 KB

english, 2014