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51

Investigation of Cu films by focused ion beam induced deposition using nuclear microprobe

Y.K Park, M Takai, C Lehrer, L Frey, H Ryssel

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1999

Language:

english

File:

PDF, 281 KB

english, 1999

52

[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Active Fuse

Berberich, S.E., Marz, M., Bauer, A.J., Beuer, S.K., Ryssel, H.

Year:

2006

Language:

english

File:

PDF, 3.61 MB

english, 2006

53

[IEEE 2011 IEEE Ninth International Conference on Power Electronics and Drive Systems (PEDS 2011) - Singapore, Singapore (2011.12.5-2011.12.8)] 2011 IEEE Ninth International Conference on Power Electronics and Drive Systems - Monolithic RC-snubber for power electronic applications

vom Dorp, J., Berberich, S.E., Erlbacher, T., Bauer, A.J., Ryssel, H., Frey, L.

Year:

2011

Language:

english

File:

PDF, 1.46 MB

english, 2011

54

Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC

Ouennoughi, Z., Strenger, C., Bourouba, F., Haeublein, V., Ryssel, H., Frey, L.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 982 KB

english, 2013

55

Reducing airborne molecular contamination by efficient purging of FOUPs for 300-mm wafers-the influence of materials properties

Frickinger, J., Bugler, J., Zielonka, G., Pfitzner, L., Ryssel, H., Hollemann, S., Schneider, H.

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2000

Language:

english

File:

PDF, 121 KB

english, 2000

56

[IEEE 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. - San Jose, CA, USA (8-10 Oct. 2001)] 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) - FOUP cleaning - FOSB transportation: a challenge for manufacturing on 300 mm wafers

Frickinger, J., Bugler, J., Zielonka, G., Ryssel, H., Hans Dudenhausen, M., Fritzsche, M., Shopbell, M.

Year:

2001

Language:

english

File:

PDF, 540 KB

english, 2001

57

Comparison of range and range straggling of implanted 10B and 11B in silicon

Ryssel, H., Kranz, H., Müller, K., Henkelmann, R. A., Biersack, J.

Journal:

Applied Physics Letters

Year:

1977

Language:

english

File:

PDF, 482 KB

english, 1977

58

Impact of platinum contamination on ferroelectric memories

Boubekeur, Hocine, Mikolajick, Thomas, Nagel, Nicolas, Dehm, Christine, Pamler, Werner, Bauer, Anton, Frey, Lothar, Ryssel, Heiner

Journal:

Integrated Ferroelectrics

Year:

2001

Language:

english

File:

PDF, 431 KB

english, 2001

59

Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements

Rambach, Martin, Frey, Lothar, Bauer, Anton J., Ryssel, Heiner

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 293 KB

english, 2006

60

High Temperature Implantation of Aluminum in 4H Silicon Carbide

Rambach, Martin, Bauer, Anton J., Ryssel, Heiner

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 206 KB

english, 2007

61

Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face

Grieb, Michael, Peters, Dethard, Bauer, Anton J., Friedrichs, Peter, Ryssel, Heiner

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 1.06 MB

english, 2009

62

Ablation Free Dicing of 4H-SiC Wafers with Feed Rates up to 200 mm/s by Using Thermal Laser Separation

Lewke, Dirk, Koitzsch, Matthias, Schellenberger, Martin, Pfitzner, Lothar, Ryssel, Heiner, Zühlke, Hans-Ulrich

Journal:

MRS Proceedings

Year:

2012

Language:

english

File:

PDF, 1.53 MB

english, 2012

63

AIP Conference Proceedings [AIP ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010 - Kyoto, (Japan) (6–11 June 2010)] - Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Laven, J. G., Schulze, H.-J., Häublein, V., Niedernostheide, F.-J., Schulze, H., Ryssel, H., Frey, L., Matsuo, Jiro, Kase, Masataka, Aoki, Takaaki, Seki, Toshio

Year:

2011

Language:

english

File:

PDF, 458 KB

english, 2011

64

[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Microanalysis of FIB induced deposited Pt films using ion microprobe

Park, Y.K., Nagai, T., Takai, M., Lehrer, C., Frey, L., Ryssel, H.

Year:

1998

Language:

english

File:

PDF, 319 KB

english, 1998

65

Silicon Based Trench Hole Power Capacitor

Berberich, S. E., vom Dorp, J., Bauer, A. J., Ryssel, H.

Journal:

Year:

2009

Language:

english

File:

PDF, 402 KB

english, 2009

66

SPIE Proceedings [SPIE Microelectronic Manufacturing 1996 - Austin, TX (Wednesday 16 October 1996)] Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II - Advanced process control system for vertical furnaces

Berger, Rudolf, Schneider, Claus, Lehnert, Wolfgang, Pfitzner, Lothar, Ryssel, Heiner, Iturralde, Armando, Lin, Te-Hua

Year:

1996

Language:

english

File:

PDF, 513 KB

english, 1996

67

Interaction between sodium chloride and texture in semi-hard Danish cheese as affected by brining time, dl-starter culture, chymosin type and cheese ripening

Akkerman, Marije, Kristensen, Lise Søndergaard, Jespersen, Lene, Ryssel, Mia Balling, Mackie, Alan, Larsen, Nick Nørreby, Andersen, Ulf, Nørgaard, Maria Kümpel, Løkke, Mette Marie, Møller, Jean Robert

Journal:

International Dairy Journal

Year:

2016

Language:

english

File:

PDF, 12.66 MB

english, 2016

68

ESSDERC ’89 || A New Silicon Diaphragm Pressure Sensor and its Stress Analysis

Heuberger, Anton, Ryssel, Heiner, Lange, Peter

Year:

1989

Language:

english

File:

PDF, 927 KB

english, 1989

69

Degradation of polyimide by implantation with Ar+ ions

V. Svorcík, V. Rybka, V. Hnatowicz, I. Miček, O. Jankovskij, R. Öchsner, H. Ryssel

Journal:

Journal of Applied Polymer Science

Year:

1997

Language:

english

File:

PDF, 198 KB

english, 1997

70

Lamb's Slip Hypothesis — Revisited for Torsional and Cone-plate Flow

P.O. Brunn, E. Ryssel

Journal:

ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik

Year:

1999

Language:

english

File:

PDF, 170 KB

english, 1999

71

Stroke magnetic resonance imaging within 6 hours after onset of hyperacute cerebral ischemia

Peter D. Schellinger, Jochen B. Fiebach, Olav Jansen, Peter A. Ringleb, Alexander Mohr, Thorsten Steiner, Sabine Heiland, Stefan Schwab, Olivia Pohlers, Henning Ryssel, Berk Orakcioglu, Klaus Sartor,

Journal:

Annals of Neurology

Year:

2001

Language:

english

File:

PDF, 2.68 MB

english, 2001

72

MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications

M. Lemberger, F. Schön, T. Dirnecker, M. P. M. Jank, L. Frey, H. Ryssel, A. Paskaleva, S. Zürcher, A. J. Bauer

Journal:

Chemical Vapor Deposition

Year:

2007

Language:

english

File:

PDF, 425 KB

english, 2007

73

Field-Effect transistors as transducers in biosensors for substrates of dehydrogenases

Thomas Vering, Wolfgang Schuhmann, Hanns-Ludwig Schmidt, Thomas Mikolajick, Thomas Falter, Heiner Ryssel, Jiri Janata

Journal:

Electroanalysis

Year:

1994

Language:

english

File:

PDF, 469 KB

english, 1994

74

CW argon-laser-induced zone-melting recrystallization of thin silicon on oxide

Xu Qiuxia, H. Ryssel, J. Götzlich, H. Steinberger

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 1.24 MB

english, 1988

75

A 60 keV Implanter for Metals

R Leutenecker, H Ryssel, K.-H Zeller, H.P Spöhrle

Journal:

Materials Science and Engineering

Year:

1985

Language:

english

File:

PDF, 1.02 MB

english, 1985

76

Wear resistance of nitrogen-implanted steels

H. Dimigen, K. Kobs, R. Leutenecker, H. Ryssel, P. Eichinger

Journal:

Materials Science and Engineering

Year:

1985

Language:

english

File:

PDF, 724 KB

english, 1985

77

Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients

S. List, P. Pichler, H. Ryssel

Journal:

Microelectronics Journal

Year:

1995

Language:

english

File:

PDF, 267 KB

english, 1995

78

The simple use of a digital multimeter for beam current integration

K. Schmid, H. Müller, H. Ryssel

Journal:

Nuclear Instruments and Methods

Year:

1972

Language:

english

File:

PDF, 71 KB

english, 1972

79

A universal goniometer for channeling experiments

K. Schmid, H. Müller, H. Ryssel

Journal:

Nuclear Instruments and Methods

Year:

1972

Language:

english

File:

PDF, 484 KB

english, 1972

80

Backscattering measurements and surface roughness

K. Schmid, H. Ryssel

Journal:

Nuclear Instruments and Methods

Year:

1974

Language:

english

File:

PDF, 231 KB

english, 1974

81

A simple spectrum monitor for E × B velocity filters

H. Ryssel, H. Müller, K. Schmid

Journal:

Nuclear Instruments and Methods

Year:

1974

Language:

english

File:

PDF, 373 KB

english, 1974

82

The application of the (n, α) method for boron depth profiling and channeling-blocking measurements in semiconductor materials

K. Müller, R. Henkelmann, F. Jahnel, H. Ryssel, K. Haberger, D. Finck, J. Biersack

Journal:

Nuclear Instruments and Methods

Year:

1980

Language:

english

File:

PDF, 468 KB

english, 1980

83

Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments

F. Jahnel, H. Ryssel, G. Prinke, K. Hoffmann, K. Müller, J. Biersack, R. Henkelmann

Journal:

Nuclear Instruments and Methods

Year:

1981

Language:

english

File:

PDF, 396 KB

english, 1981

84

Wear of steels after implantation of oxygen ions or oxidation at 670 K

Kathrin Langguth, Andreas Kluge, Heiner Ryssel

Journal:

Year:

1992

Language:

english

File:

PDF, 597 KB

english, 1992

85

Wear of steels after implantation of aluminium and coimplantation of aluminium and oxygen ions

Kathrin Langguth, Heiner Ryssel

Journal:

Year:

1993

Language:

english

File:

PDF, 866 KB

english, 1993

86

In situ measurement for resist thickness control and development endpoint detection

G. Temmel, G. Roeder, H. Ryssel

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 323 KB

english, 1992

87

Simulation of high energy implantation profiles in crystalline silicon

L. Gong, S. Bogen, L. Frey, W. Jung, H. Ryssel

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 224 KB

english, 1992

88

Preface

Heiner Ryssel, Dieter Stephani

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 53 KB

english, 1993

89

A novel end point detection technique for in situ development of photoresist

G. Temmel, H. Ryssel

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 265 KB

english, 1993

90

Analysis of microstructured samples by focused ion beam sample preparation

L. Frey, W. Ergele, T. Falter, L. Gong, H. Ryssel

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 429 KB

english, 1993

91

Influence of statistical dopant fluctuations on MOS transistors with deep submicron channel lengths

T. Mikolajick, H. Ryssel

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 274 KB

english, 1993

92

A comparison of SOI technologies and materials, and prospective fields of application

H. Ryssel, R. Schork, N.X. Chen

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 608 KB

english, 1993

93

Nitrogen implanted etch-stop layers in silicon

R. Paneva, G. Temmel, E. Burte, H. Ryssel

Journal:

Microelectronic Engineering

Year:

1995

Language:

english

File:

PDF, 383 KB

english, 1995

94

Ion-beam mixed MoSi2 layers: The dependence of composition on mixing temperature

Géza Vályi, Heiner Ryssel, Otto Ganschow, Ralf Jede

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 364 KB

english, 1989

95

Formation and contact properties of titanium-silicided shallow junctions

Christine Dehm, Josef Gyulai, Heiner Ryssel

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 663 KB

english, 1991

96

Application of advanced contamination analysis for qualification of wafer handling systems and chucks

F. Kroninger, N. Streckfuss, L. Frey, T. Falter, C. Ryzlewicz, L. Pfitzner, H. Ryssel

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 371 KB

english, 1993

97

In situ ellipsometry for real-time feedback control of oxidation furnaces

C. Schneider, R. Berger, L. Pfitzner, H. Ryssel

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 396 KB

english, 1993

98

Contamination control and ultrasensitive chemical analysis

H. Ryssel, L. Frey, N. Streckfuss, R. Schork, F. Kroninger, T. Falter

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 562 KB

english, 1993

99

Influence of oxide thickness on ion-beam induced and thermal CoSi2 formation

C. Dehm, I. Kasko, E.P. Burte, J. Gyulai, H. Ryssel

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 1.17 MB

english, 1993

100

Reduction of friction and wear by ion-implanted carbonized photoresist

R. Öchsner, A. Kluge, J. Gyulai, S. Bogen, H. Ryssel

Journal:

Surface and Coatings Technology

Year:

1992

Language:

english

File:

PDF, 437 KB

english, 1992