Volume 46; Issue 1-3

Materials Science and Engineering: B

Volume 46; Issue 1-3
9

III–V compounds for high-temperature operation

Hans Ludwig Hartnagel
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 572 KB
english, 1997
10

Technology towards GaAs MESFET-based IC for high temperature applications

J. Würfl, B. Janke
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 525 KB
english, 1997
11

High temperature/high power Schottky diodes

N.G. Wright, A.G. O'Neill, C.M. Johnson
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 367 KB
english, 1997
12

Temperature studies of sulfur passivated GaAs(100) contacts

D. Wu, L. Liu, J. Marcano, Y. Darici, N. Paul, S. Mergui
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 345 KB
english, 1997
15

GaN based transistors for high temperature applications

M. Asif Khan, Michael S. Shur
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 465 KB
english, 1997
17

Nucleation of boron nitride on Ni(100) surfaces

R.M. Desrosiers, D.W. Greve, A.J. Gellman
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 477 KB
english, 1997
23

Piezoresistivity of boron doped CVD diamond films

Yu. Boiko, P. Gonon, S. Prawer, D.N. Jamieson
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 367 KB
english, 1997
26

Laser-assisted etching of diamonds in air and in liquid media

G.A. Shafeev, E.D. Obraztsova, S.M. Pimenov
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 360 KB
english, 1997
36

A growth model for the carbonization of silicon surfaces

V. Cimalla, J. Pezoldt, G. Eichhorn
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 381 KB
english, 1997
40

Characterization of 3C-SiC doped by nitrogen implantation

R. Lossy, W. Reichert, E. Obermeier
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 382 KB
english, 1997
51

SiC material for high-power applications

E. Janzén, O. Kordina
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 712 KB
english, 1997
59

Defect mapping in 4H-SiC wafers

R. Yakimova, T. Yakimov, L. Hitova, E. Janzén
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 368 KB
english, 1997
60

Temperature gradient controlled SiC crystal growth

M. Anikin, R. Madar
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 771 KB
english, 1997
67

Deep levels of chromium in 4H-SiC

Norbert Achtziger, Wolfgang Witthuhn
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 346 KB
english, 1997
68

Growth of 4H-SiC from liquid phase

M. Syväjärvi, R. Yakimova, L.G. Ivanov, E. Janzén
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 362 KB
english, 1997
73

Oxidation of clean and H-terminated SiC surfaces

Volker van Eisbergen, Oliver Janzen, Winfried Mönch
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 381 KB
english, 1997
79

Growth of SiC ingots with high ratea

Sergei I. Dorozhkin, Dmitri D. Avrov, Vladimir P. Rastegaev, Yuri M. Tairov
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 372 KB
english, 1997
82

Amorphous carbon films rich in diamond deposited by magnetron sputtering

S. Logothetidis, M. Gioti
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 529 KB
english, 1997
84

Forewords

Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 107 KB
english, 1997