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1

[IEEE 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Brugge, Belgium (2009.09.14-2009.09.18)] 2009 European Conference on Radiation and Its Effects on Components and Systems - Effect of the ion mass and energy on the response of 70-nm SOI transistors to the ion deposited charge by direct ionization

Raine, Melanie, Gaillardin, Marc, Sauvestre, Jean-Etienne, Flament, Olivier, Bournel, Arnaud, Aubry-Fortuna, Valerie

Year:

2009

File:

PDF, 1.73 MB

2009

2

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

P. Palestri, C. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, C. Fenouillet-Beranger, C. Fiegna, G. Fiori, A. Ghetti, G.

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 1.23 MB

english, 2009

3

Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation

A. Bournel, V. Aubry-Fortuna, J. Saint-Martin, P. Dollfus

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 325 KB

english, 2007

4

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - Influence of ballistic effects in ultra-small MOSFETs

Saint Martin,, Aubry-Fortuna,, Bournel,, Dollfus,, Galdin,, Chassat,

Year:

2004

Language:

english

File:

PDF, 93 KB

english, 2004

5

What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds?

V. Aubry-Fortuna, J.-L. Perrossier, M. Mamor, F. Meyer, C. Frojdh, G. Thungstrom, C.S. Petersson, S. Bodnar, J.L. Regolini

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 368 KB

english, 1997

6

[IEEE European Workshop Materials for Advanced Metallization. MAM'97 Abstracts Booklet - Villard de Lans, France (1997.03.16-1997.03.19)] European Workshop Materials for Advanced Metallization, - What is the metal role an the fermi-level position at the interface with IV-IV compounds ?

Aubry-Fortuna, V., Perrossier, J.-L., Mamor, M., Meyer, F., Frojdh, C., Thungstrom, G., Petersson, C.S., Bodnar, S., Regolini, J.L.

Year:

1998

Language:

english

File:

PDF, 150 KB

english, 1998

7

Characterizations Of Zr/Si1-x-yGexCy After Rapid Thermal Annealing

Aubry-Fortuna, V., Barthula, M., Meyer, F., Eyal, A., Cytermann, C., Eizenberg, M., Chaix-Pluchery, O.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 1.20 MB

english, 1998

8

Influence of Ballistic Effects in Ultra-Small MOSFETs

J. Saint Martin, V. Aubry-Fortuna, A. Bournel, P. Dollfus, S. Galdin, C. Chassat

Journal:

Journal of Computational Electronics

Year:

2004

Language:

english

File:

PDF, 478 KB

english, 2004

9

MONTE CARLO SIMULATION OF GIANT PIEZORESISTANCE EFFECT IN p-TYPE SILICON NANOSTRUCTURES

NGHIÊM, T. T. TRANG, AUBRY-FORTUNA, V., CHASSAT, C., BOSSEBOEUF, A., DOLLFUS, P.

Journal:

Modern Physics Letters B

Year:

2011

Language:

english

File:

PDF, 759 KB

english, 2011

10

Fermi-level pinning in Schottky diodes on IV–IV semiconductors: effect of Ge and C incorporation

M Mamor, J.-L Perrossier, V Aubry-Fortuna, F Meyer, D Bouchier, S Bodnar, J.L Regolini

Journal:

Thin Solid Films

Year:

1997

File:

PDF, 313 KB

1997

11

Contacts on Si[sub 1−x−y]Ge[sub x]C[sub y] alloys: Electrical properties and thermal stability

V. Aubry-fortuna

Year:

1998

Language:

english

File:

PDF, 747 KB

english, 1998

12

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - Experimental and theoretical analysis of hole transport in uniaxially strained pMOSFETs

Huet, K., Feraille, M., Rideau, D., Delamare, R., Aubry-Fortuna, V., Kasbari, M., Blayac, S., Rivero, C., Bournel, A., Tavernier, C., Dollfus, P., Jaouen, H.

Year:

2008

Language:

english

File:

PDF, 554 KB

english, 2008

13

[IEEE 2010 International Workshop on Computational Electronics (IWCE) - Pisa, Italy (2010.10.26-2010.10.29)] 2010 14th International Workshop on Computational Electronics - Comparison of semiclassical transport formulations including quantum corrections for advanced devices with High-K gate stacks

Bufler, F. M., Aubry-Fortuna, V., Bournel, A., Braccioli, M., Dollfus, P., Esseni, D., Fiegna, C., Gamiz, F., De Michielis, M., Palestri, P., Saint-Martin, J., Sampedro, C., Sangiorgi, E., Selmi, L.,

Year:

2010

Language:

english

File:

PDF, 130 KB

english, 2010

14

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Giant piezoresistance effect in p-type silicon

Nghiem, T. T. Trang, Aubry-Fortuna, V., Chassat, C., Bosseboeuf, A., Dollfus, P.

Year:

2010

Language:

english

File:

PDF, 140 KB

english, 2010

15

[IEEE European Workshop Materials for Advanced Metallization. MAM'97 Abstracts Booklet - Villard de Lans, France (1997.03.16-1997.03.19)] European Workshop Materials for Advanced Metallization, - Raman study of tungsten disilicide formation in thin films

Chaix-Pluchery, O., Lucazeau, G., Meyer, F., Aubry-Fortuna, V., Madar, R.

Year:

1998

Language:

english

File:

PDF, 117 KB

english, 1998

16

An Application-Driven Improvement of the Drift–Diffusion Model for Carrier Transport in Decanano-Scaled CMOS Devices

Kampen, C., Burenkov, A., Lorenz, J., Ryssel, H., Aubry-Fortuna, V., Bournel, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.64 MB

english, 2008

17

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

V. Aubry-Fortuna, P. Dollfus, S. Galdin-Retailleau

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 513 KB

english, 2005

18

Band offset predictions for strained group IV alloys: Si 1- x - y Ge x C y on Si(001) and Si 1- x Ge x on Si 1- z Ge z (001)

Galdin, Sylvie, Dollfus, Philippe, Aubry-Fortuna, Valérie, Hesto, Patrice, Osten, H Jörg

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 159 KB

english, 2000

19

Monte Carlo simulation of double gate MOSFET including multi sub-band description

J. Saint-Martin, A. Bournel, V. Aubry-Fortuna, F. Monsef, C. Chassat, P. Dollfus

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 320 KB

english, 2006

20

Schottky barrier heights on IV-IV compound semiconductors

F. Meyer, M. Mamor, V. Aubry-Fortuna, P. Warren, S. Bodnar, D. Dutartre, J. L. Regolini

Journal:

Journal of Electronic Materials

Year:

1996

Language:

english

File:

PDF, 687 KB

english, 1996

21

On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

Querlioz, D., Saint-Martin, J., Huet, K., Bournel, A., Aubry-Fortuna, V., Chassat, C., Galdin-Retailleau, S., Dollfus, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 889 KB

english, 2007

22

Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization

Raine, Mélanie, Gaillardin, Marc, Sauvestre, Jean-Etienne, Flament, Olivier, Bournel, Arnaud, Aubry-Fortuna, Valérie

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 684 KB

english, 2010

23

Rapid thermal annealing of Zr/SiGeC contacts

M Barthula, V Aubry-Fortuna, F Meyer, O Chaix-Pluchery, A Eyal, M Eizenberg, P Warren

Journal:

Materials Science in Semiconductor Processing

Year:

1998

Language:

english

File:

PDF, 224 KB

english, 1998

24

A metastable (√3 × √3)R30° reconstruction of the Si(111) surface, induced by silicon adatoms

Vinh Le Thanh, Valérie Aubry-Fortuna, Daniel Bouchier, Abdelaziz Younsi, Gérard Hincelin

Journal:

Surface Science

Year:

1996

Language:

english

File:

PDF, 578 KB

english, 1996

25

[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Comparison of advanced transport models for nanoscale nMOSFETs

Palestri, P., Alexander, C., Asenov, A., Baccarani, G., Bournel, A., Braccioli, M., Cheng, B., Dollfus, P., Esposito, A., Esseni, D., Ghetti, A., Fiegna, C., Fiori, G., Aubry-Fortuna, V., Iannaccone,

Year:

2009

Language:

english

File:

PDF, 478 KB

english, 2009

26

Thermal stability and electrical properties of Zr/Si[sub 1−x−y]Ge[sub x]C[sub y] contacts after rapid thermal annealing

Aubry-Fortuna, V., Eyal, A., Chaix-Pluchery, O., Barthula, M., Meyer, F., Eizenberg, M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 259 KB

english, 1998

27

Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers

Defives, D., Noblanc, O., Dua, C., Brylinski, C., Barthula, M., Aubry-Fortuna, V., Meyer, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 217 KB

english, 1999

28

AIP Conference Proceedings [AIP THE THIRTEENTH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS—LTD13 - Stanford (California) (20–24 July 2009)] - Field Dependence of Electron Velocity in High-Purity Germanium at Cryogenic Temperatures

Aubry-Fortuna, V., Broniatowski, A., Dollfus, P., Young, Betty, Cabrera, Blas, Miller, Aaron

Year:

2009

Language:

english

File:

PDF, 662 KB

english, 2009

29

[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Impact of strain on p-DGMOS performance using full-band Monte Carlo simulation

Aubry-Fortuna, V., Huet, K., Bournel, A., Rideau, D., Chassat, C., Dollfus, P.

Year:

2009

Language:

english

File:

PDF, 885 KB

english, 2009

30

[IEEE European Workshop Materials for Advanced Metallization. MAM'97 Abstracts Booklet - Villard de Lans, France (1997.03.16-1997.03.19)] European Workshop Materials for Advanced Metallization, - What is the metal role on the Fermi-level position at the interface with IV-IV compounds?

Aubry-Fortuna, V., Perrossier, J.-L., Mamor, M., Meyer, F., Frojdh, C., Thungstrom, G., Petersson, C.S., Bodnar, S., Regolini, J.L.

Year:

1997

Language:

english

File:

PDF, 154 KB

english, 1997

31

Annealing of thin Zr films on Si1−xGex(0≤x≤1): X-ray diffraction and Raman studies

O. Chaix-Pluchery, B. Chenevier, V. Aubry-Fortuna, I. Matko

Journal:

Journal of Physics and Chemistry of Solids

Year:

2002

Language:

english

File:

PDF, 328 KB

english, 2002

32

Schottky-barrier height inhomogeneities controlled by buried Ge/Si quantum dots

A Hattab, V Aubry-Fortuna, F Meyer, Vy Yam, Vinh Le Thanh, D Bouchier, C Clerc

Journal:

Microelectronic Engineering

Year:

2002

Language:

english

File:

PDF, 243 KB

english, 2002

33

UHV-CVD heteroepitaxial growth of Si1−xGex alloys on Si(100) using silane and germane

Le Thanh Vinh, V. Aubry-Fortuna, Y. Zheng, D. Bouchier, C. Guedj, G. Hincelin

Journal:

Thin Solid Films

Year:

1997

File:

PDF, 413 KB

1997

34

[IEEE Semiconducting and Semi-Insulating Materials Conference - Toulouse, France (29 April-3 May 1996)] Proceedings of Semiconducting and Semi-Insulating Materials Conference - Schottky diodes on Si/sub 1-x/Ge/sub x/, Si/sub 1-x-y/Ge/sub x/C/sub y/ and Si/sub 1-y/C/sub y/ alloys

Aubry-Fortuna, V., Mamor, M., Meyer, F., Bodnar, S., Regolini, J.L.

Year:

1996

Language:

english

File:

PDF, 312 KB

english, 1996

35

Raman study of tungsten disilicide formation in thin films

O. Chaix-Pluchery, G. Lucazeau, V. Aubry-Fortuna, F. Meyer, R. Madar

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 433 KB

english, 1997

36

[IEEE 2010 27th International Conference on Microelectronics Proceedings - Nis, Serbia (2010.05.16-2010.05.19)] 2010 27th International Conference on Microelectronics Proceedings - Drain current computation in nanoscale nMOSFETs: Comparison of transport models

Sangiorgi, E., Alexander, C., Asenov, A., Aubry-Fortuna, V., Baccarani, G., Bournel, A., Braccioli, M., Cheng, B., Dollfus, P., Esposito, A., Esseni, D., Fenouillet-Beranger, C., Fiegna, C., Fiori, G.

Year:

2010

Language:

english

File:

PDF, 543 KB

english, 2010

37

Electron transport properties in high-purity Ge down to cryogenic temperatures

Aubry-Fortuna, V., Dollfus, P.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 579 KB

english, 2010

38

Structural properties and stability of Zr and Ti germanosilicides formed by rapid thermal annealing

V. Aubry-fortuna, O. Chaix-pluchery, F. Fortuna, C. Hernandez, Y. Campidelli, D. Bensahel

Year:

2002

Language:

english

File:

PDF, 508 KB

english, 2002

39

Phase formation and strain relaxation during thermal reaction of Zr and Ti with strained Si[sub 1−x−y]Ge[sub x]C[sub y] epilayers

Aubry-Fortuna, V., Tremblay, G., Meyer, F., Miron, Y., Roichman, Y., Eizenberg, M., Fortuna, F., Hörmann, U., Strunk, H.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 542 KB

english, 2000

40

Ultra-short n-MOSFETs with strained Si: device performance and the effect of ballistic transport using Monte Carlo simulation

Aubry-Fortuna, Valérie, Bournel, Arnaud, Dollfus, Philippe, Galdin-Retailleau, Sylvie

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 242 KB

english, 2006

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