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51

Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si

C.A. Londos, A. Andrianakis, V.V. Emtsev, G.A. Oganesyan, H. Ohyama

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 340 KB

english, 2009

52

Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation

V.V. Emtsev, Yu.A. Nikolaev, D.S. Poloskin, E.I. Terukov, I.V. Bodnar’, V.Yu. Rud’, Yu.V. Rud’

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 148 KB

english, 2009

53

Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties

S. Weingart, C. Bock, U. Kunze, K.V. Emtsev, Th. Seyller, L. Ley

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2010

Language:

english

File:

PDF, 296 KB

english, 2010

54

Electronic properties of clean unreconstructed 6H–SiC(0 0 0 1) surfaces studied by angle resolved photoelectron spectroscopy

K.V. Emtsev, Th. Seyller, L. Ley, A. Tadich, L. Broekman, J.D. Riley, R.C.G. Leckey, M. Preuss

Journal:

Surface Science

Year:

2006

Language:

english

File:

PDF, 678 KB

english, 2006

55

A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon

V.V Emtsev, V.V Emtsev Jr, D.S Poloskin, E.I Shek, N.A Sobolev

Journal:

Journal of Luminescence

Year:

1998

Language:

english

File:

PDF, 103 KB

english, 1998

56

Radiation-induced defects in n-type GaN and InN

V.V. Emtsev, V.Yu. Davydov, E.E. Haller, A.A. Klochikhin, V.V. Kozlovskii, G.A. Oganesyan, D.S. Poloskin, N.M. Shmidt, V.A. Vekshin, A.S. Usikov

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 151 KB

english, 2001

57

Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing

A.V. Mudryi, F.P. Korshunov, A.I. Patuk, I.A. Shakin, T.P. Larionova, A.G. Ulyashin, R. Job, W.R. Fahrner, V.V. Emtsev, V.Yu. Davydov, G. Oganesyan

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 123 KB

english, 2001

58

Shallow donors in silicon coimplanted with rare-earth ions and oxygen

V.V. Emtsev Jr., C.A.J. Ammerlaan, B.A. Andreev, G.A. Oganesyan, D.S. Poloskin, N.A. Sobolev

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 131 KB

english, 2001

59

Positron annihilation in AlN and GaN

N.Yu. Arutyunov, V.V. Emtsev, A.V. Mikhailin, V.Yu. Davidov

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 126 KB

english, 2001

60

Vacancies and self-interstitials in germanium: a picture derived from radioactive probes

R. Sielemann, H. Hässlein, Ch. Zistl, M. Müller, L. Stadler, V.V. Emtsev

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 139 KB

english, 2001

61

The effect of high temperature–high pressure treatment on the annealing behavior of VO center in neutron-irradiated Czochralski silicon

C.A. Londos, M. Potsidou, A. Misiuk, V.V. Emtsev, J. Bak-Misiuk

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 89 KB

english, 2001

62

A new approach to analysis of mosaic structure peculiarities of gallium nitride epilayers

A.G. Kolmakov, V.V. Emtsev, W.V. Lundin, V.V. Ratnikov, N.M. Shmidt, A.N. Titkov, A.S. Usikov

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 114 KB

english, 2001

63

Behavior of electrically active point defects in irradiated MOCVD n-GaN

V.V Emtsev, V.Yu Davydov, V.V Kozlovskii, D.S Poloskin, A.N Smirnov, N.M Shmidt, A.S Usikov

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 120 KB

english, 1999

64

An infrared investigation of the 887 cm−1 band in Cz–Si

L.G. Fytros, G.J. Georgiou, C.A. Londos, V.V. Emtsev

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 142 KB

english, 1999

65

Impurity effects in silicon implanted with rare-earth ions

V.V Emtsev, V.V Emtsev Jr., D.S Poloskin, E.I Shek, N.A Sobolev, J Michel, L.C Kimerling

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 109 KB

english, 1999

66

Electron irradiation of heavily doped silicon: group-III impurity ion pairs

V.V Emtsev, P Ehrhart, D.S Poloskin, U Dedek

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 128 KB

english, 1999

67

Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots

M.M Sobolev, I.V Kochnev, V.M Lantratov, N.A Cherkashin, V.V Emtsev

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

68

Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon

V.V. Emtsev Jr, D.S. Poloskin, E.I. Shek, N.A. Sobolev, L.C. Kimerling

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

69

Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450–650 °C under hydrostatic pressure

B. Surma, C.A. Londos, V.V. Emtsev, A. Misiuk, A. Bukowski, M.S. Potsidi

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 215 KB

english, 2003

70

Photoluminescence of n-InN with low electron concentrations

Albert Klochikhin, Valery Davydov, Vadim Emtsev, Alexey Sakharov, Vladimir Kapitonov, Boris Andreev, Hai Lu, William J. Schaff

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 635 KB

english, 2006

71

Interface of atomic layer deposited Al2O3 on H-terminated silicon

K. Y. Gao, F. Speck, K. Emtsev, Th. Seyller, L. Ley, M. Oswald, W. Hansch

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 559 KB

english, 2006

72

Vacancy–donor complexes in γ-irradiated phosphorus-doped germanium

V. V. Emtsev, R. L. Korkhashkina, T. V. Mashovets

Journal:

physica status solidi (a)

Year:

1972

Language:

english

File:

PDF, 400 KB

english, 1972

73

Electrical Properties of Thermal Donors Formed in CZ-Si during Heat Treatment at 450 °C

V. V. Emtsev, Yu. N. Daluda, P. Gaworzewski, K. Schmalz

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 607 KB

english, 1984

74

The spatial distribution of frenkel pair components created in germanium and silicon under irradiation

V. V. Emtsev, T. V. Mashovets, N. A. Vitovskii

Journal:

physica status solidi (a)

Year:

1985

Language:

english

File:

PDF, 498 KB

english, 1985

75

Effects of oxygen clustering at 600 °C on the annealing of A-centers in Cz silicon

K. Schmalz, K. Tittelbach, V. V. Emtsev, Yu. N. Daluda

Journal:

physica status solidi (a)

Year:

1989

Language:

english

File:

PDF, 280 KB

english, 1989

76

On the A-Centre Formation in Heat-Treated Cz-Silicon

V. V. Emtsev, V. A. Khramtsov, K. Schmalz

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 243 KB

english, 1990

77

A Study of Defects in Heat Treated Cz-Silicon by Positron Annihilation

N. Yu. Arutyunov, V. V. Emtsev, K. Schmalz, V. Yu. Trashchakov

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 254 KB

english, 1990

78

Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures

V. V. Emtsev Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, B. A. Andreev, D. I. Kuritsyn, A. Misiuk, B. Surma, C. A. Londos

Journal:

physica status solidi (b)

Year:

2003

Language:

english

File:

PDF, 175 KB

english, 2003

79

Study of IR absorption and photoconductivity spectra of thermal double donors in silicon

B. A. Andreev, V. V. Emtsev, D. I. Kryzhkov, D. I. Kuritsyn, V. B. Shmagin

Journal:

physica status solidi (b)

Year:

2003

Language:

english

File:

PDF, 166 KB

english, 2003

80

Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys

V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, A. N. Smirnov, I. N. Goncharuk, A. V. Sakharov, D. A. Kurdyukov, M. V. Baidakova, V. A. Vekshin, S. V. Ivanov, J. Aderhold, J. Graul, A. Hashimoto, A. Y

Journal:

physica status solidi (b)

Year:

2003

Language:

english

File:

PDF, 268 KB

english, 2003

81

Manifestation of the equilibrium hole distribution in photoluminescence of n-InN

A. A. Klochikhin, V. Yu. Davydov, V. V. Emtsev, A. V. Sakharov, V. A. Kapitonov, B. A. Andreev, Hai Lu, William J. Schaff

Journal:

physica status solidi (b)

Year:

2005

Language:

english

File:

PDF, 160 KB

english, 2005

82

A gauge invariant approach to the Raman scattering in heavily doped crystals

A. A. Klochikhin, V. Yu. Davydov, V. V. Emtsev, A. N. Smirnov, R. v. Baltz

Journal:

physica status solidi (b)

Year:

2005

Language:

english

File:

PDF, 205 KB

english, 2005

83

Epitaxial graphene: a new material

Th. Seyller, A. Bostwick, K. V. Emtsev, K. Horn, L. Ley, J. L. McChesney, T. Ohta, J. D. Riley, E. Rotenberg, F. Speck

Journal:

physica status solidi (b)

Year:

2008

Language:

english

File:

PDF, 1.47 MB

english, 2008

84

Photoemission of Ga1–xMnx As with high Curie temperature and transformation into MnAs of zincblende structure

O. Rader, S. Valencia, W. Gudat, K. W. Edmonds, R. P. Campion, B. L. Gallagher, C. T. Foxon, K. V. Emtsev, Th. Seyller

Journal:

physica status solidi (b)

Year:

2009

Language:

english

File:

PDF, 284 KB

english, 2009

85

Shallow donor centers in gallium nitrides

V. V. Emtsev, V. Yu. Davydov, K. V. Emtsev, D. S. Poloskin, G. A. Oganesyan, V. V. Kozlovskii, E. E. Haller

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 117 KB

english, 2003

86

Effect of carbon on oxygen precipitation in Czochralski silicon

C. A. Londos, M. S. Potsidi, V. V. Emtsev

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 174 KB

english, 2005

87

Effects of proton irradiation on electrical and optical properties of n-InN

V. V. Emtsev, V. Yu. Davydov, A. A. Klochikhin, A. V. Sakharov, A. N. Smirnov, V. V. Kozlovskii, C.-L. Wu, C.-H. Shen, S. Gwo

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 171 KB

english, 2007

88

Accuracy of hydrological measurements and calculations

S. S. Vasilenko, B. T. Emtsev

Journal:

Power Technology and Engineering

Year:

1968

Language:

english

File:

PDF, 114 KB

english, 1968

89

Comments on the paper by A.F. Lehar and J.E. Whitehouse “Irradiation induced compensation of n-type germanium. electrical measurements.” published in Solid State Communications 17, 1609 (1975)

V.V. Emtsev, T.V. Mashovets

Journal:

Solid State Communications

Year:

1977

Language:

english

File:

PDF, 191 KB

english, 1977

90

Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR data

N.Yu. Arutyunov, V.V. Emtsev, A.V. Mikhailin, C.J. Humphreys

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 200 KB

english, 2003

91

High-resolution magnetic-resonance spectroscopy of thermal donors in silicon

V.V. Emtsev Jr., C.A.J. Ammerlaan, A.A. Ezhevskii, A.V. Gusev

Journal:

Physica B: Condensed Matter

Year:

2006

Language:

english

File:

PDF, 150 KB

english, 2006

92

Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium

V. V. Emtsev, V. V. Emtsev, D. S. Poloskin, N. A. Sobolev, E. I. Shek, J. Michel, L. C. Kimerling

Journal:

Year:

1999

Language:

english

File:

PDF, 55 KB

english, 1999

93

Effect ofγirradiation on the photoluminescence kinetics of porous silicon

V. F. Agekyan, Yu. A. Stepanov, V. V. Emtsev, A. A. Lebedev, D. S. Poloskin, A. D. Remenyuk

Journal:

Year:

1999

Language:

english

File:

PDF, 45 KB

english, 1999

94

Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium

V. V. Emtsev, V. V. Emtsev, D. S. Poloskin, E. I. Shek, N. A. Sobolev, J. Michel, L. C. Kimerling

Journal:

Year:

1999

Language:

english

File:

PDF, 66 KB

english, 1999

95

Serge(overset{lower0.5emhbox{(smash{scriptscriptstylesmile})}}{l})Petrovich Solov’ev (1932–2000)

V. N. Brudnyi, V. T. Bublik, B. N. Goshitskii, V. V. Emtsev, Yu. A. Kazanskii, R. F. Konopleva, Yu. V. Konobeev, N. G. Kolin, I. I. Kuz’min, M. G. Mil’vidskii, R. P. Ozerov, V. B. Osvenskii, V. G. Plo

Journal:

Year:

2000

Language:

english

File:

PDF, 53 KB

english, 2000

96

Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity

L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, S. I. Kokhanovskii, D. S. Poloskin, N. M. Shmidt

Journal:

Technical Physics Letters

Year:

2001

Language:

english

File:

PDF, 39 KB

english, 2001

97

Surface gettering of background impurities and defects in GaAs wafers

L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, D. S. Poloskin, N. M. Shmidt

Journal:

Year:

2001

Language:

english

File:

PDF, 55 KB

english, 2001

98

Investigation of vacancy-type complexes in GaN and AlN using positron annihilation

N. Yu. Arutyunov, A. V. Mikhailin, V. Yu. Davydov, V. V. Emtsev, G. A. Oganesyan, E. E. Haller

Journal:

Year:

2002

Language:

english

File:

PDF, 69 KB

english, 2002

99

Spectroscopic parameters of the absorption bands related to the local vibrational modes of carbon and oxygen impurities in silicon enriched with28Si,29Si, and30Si isotopes

P. G. Sennikov, T. V. Kotereva, A. G. Kurganov, B. A. Andreev, H. Niemann, D. Schiel, V. V. Emtsev, H. -J. Pohl

Journal:

Year:

2005

Language:

english

File:

PDF, 109 KB

english, 2005

100

Photosensitivity of photocells based on ZnO/CdS/Cu(In, Ga)Se2heterostructures and exposed to γ-ray radiation

V. V. Emtsev, Yu. A. Nikolaev, D. S. Poloskin, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, M. V. Yakushev

Journal:

Year:

2005

Language:

english

File:

PDF, 78 KB

english, 2005

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