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51

High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base

Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 288 KB

english, 2001

52

Common-emitter current–voltage characteristics of a pnp GaN bipolar junction transistor

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 373 KB

english, 2002

53

Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament

Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 322 KB

english, 1995

54

Radiation and polarization properties of free-exciton emission from AlN (0001) surface

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 483 KB

english, 2007

55

Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

Kasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 377 KB

english, 1996

56

Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy

Ito, Hiroshi, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 582 KB

english, 1991

57

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Makimoto, Toshiki, Yamauchi, Yoshiharu, Kumakura, Kazuhide

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 290 KB

english, 2004

58

AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates

Nishida, Toshio, Makimoto, Toshiki, Saito, Hisao, Ban, Tomoyuki

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 288 KB

english, 2004

59

Temperature dependence of current-voltage characteristics of npn-type GaN∕InGaN double heterojunction bipolar transistors

Nishikawa, Atsushi, Kumakura, Kazuhide, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 331 KB

english, 2007

60

High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 304 KB

english, 2003

61

Nonpolar AlBN (1120) and (1100) films grown on SiC substrates

Akasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 413 KB

english, 2007

62

Electron conduction in GaAs atomic layer doped with Si

Makimoto, Toshiki, Kobayashi, Naoki, Horikoshi, Yoshiji

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 731 KB

english, 1988

63

Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors

Makimoto, Toshiki, Kido, Takatoshi, Kumakura, Kazuhide, Taniyasu, Yoshitaka, Kasu, Makoto, Matsumoto, Nobuo

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 109 KB

english, 2006

64

High breakdown voltage with low on-state resistance of p-InGaN∕n-GaN vertical conducting diodes on n-GaN substrates

Nishikawa, Atsushi, Kumakura, Kazuhide, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 294 KB

english, 2006

65

AlGaAs/GaAs heterojunction bipolar transistors with heavily C-doped base layers grown by flow-rate modulation epitaxy

Makimoto, Toshiki, Kobayashi, Naoki, Ito, Hiroshi, Ishibashi, Tadao

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 408 KB

english, 1989

66

Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs

Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 245 KB

english, 1995

67

Carrier transport mechanisms of Pnp AlGaN∕GaN heterojunction bipolar transistors

Kumakura, Kazuhide, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 265 KB

english, 2008

68

Growth of nonpolar AlN (1120) and (1100) films on SiC substrates by flow-rate modulation epitaxy

Akasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 411 KB

english, 2007

69

High drain current density and reduced gate leakage current in channel-doped AlGaN∕GaN heterostructure field-effect transistors with Al[sub 2]O[sub 3]∕Si[sub 3]N[sub 4] gate insulator

Maeda, Narihiko, Wang, Chengxin, Enoki, Takatomo, Makimoto, Toshiki, Tawara, Takehiko

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 273 KB

english, 2005

70

High performance pnp AlGaN∕GaN heterojunction bipolar transistors on GaN substrates

Kumakura, Kazuhide, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 314 KB

english, 2008

71

Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 67 KB

english, 2000

72

High-voltage operation with high current gain of pnp AlGaN∕GaN heterojunction bipolar transistors with thin n-type GaN base

Kumakura, Kazuhide, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 244 KB

english, 2005

73

Field emission properties of heavily Si-doped AlN in triode-type display structure

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 301 KB

english, 2004

74

Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 400 KB

english, 2002

75

Current-voltage characteristics of p-InGaN∕n-GaN vertical conducting diodes on n[sup +]-SiC substrates

Nishikawa, Atsushi, Kumakura, Kazuhide, Akasaka, Tetsuya, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 359 KB

english, 2005

76

Flow-Rate Modulation Epitaxy of GaAs

Kobayashi, Naoki, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 472 KB

1985

77

Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs

Kobayashi, Naoki, Makimoto, Toshiki

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 408 KB

1985

78

Efficient Si Planar Doping in GaAs by Flow-Rate Modulation Epitaxy

Kobayashi, Naoki, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 530 KB

1986

79

Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy

Makimoto, Toshiki, Kobayashi, Naoki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 535 KB

1986

80

Reduction of Deep Level Concentrations in GaAs Layers Grown by Flow-Rate Modulation Epitaxy

Makimoto, Toshiki, Yamauchi, Yoshiharu, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1988

File:

PDF, 412 KB

1988

81

Electron Conduction in an Atomic-Layer-Doped GaAs Plane

Makimoto, Toshiki, Kobayashi, Naoki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1988

File:

PDF, 445 KB

1988

82

Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy

Yamauchi, Yoshiharu, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1989

File:

PDF, 605 KB

1989

83

Annealing Properties of Si-Atomic-Layer-Doped GaAs

Yamauchi, Yoshiharu, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1989

File:

PDF, 591 KB

1989

84

In Situ Optical Monitoring of the GaAs Growth Process in MOCVD

Makimoto, Toshiki, Yamauchi, Yoshiharu, Kobayashi, Naoki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1990

File:

PDF, 539 KB

1990

85

Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method

Makimoto, Toshiki, Yamauchi, Yoshiharu, Kobayashi, Naoki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1990

File:

PDF, 606 KB

1990

86

Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption

Yamauchi, Yoshiharu, Makimoto, Toshiki, Kobayashi, Naoki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1990

File:

PDF, 468 KB

1990

87

p + -n + GaAs Tunnel Junction Diodes Grown by Flow-Rate Modulation Epitaxy

Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1990

File:

PDF, 539 KB

1990

88

InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

Kurishima, Kenji, Makimoto, Toshiki, Kobayashi, Takashi, Ishibashi, Tadao

Journal:

Japanese Journal of Applied Physics

Year:

1991

File:

PDF, 561 KB

1991

89

InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si

Makimoto, Toshiki, Kurishima, Kenji, Kobayashi, Takashi, Ishibashi, Tadao

Journal:

Japanese Journal of Applied Physics

Year:

1991

File:

PDF, 588 KB

1991

90

Carbon Atomic Layer Doping in AlGaAs by Metalorganic Chemical Vapor Deposition and Its Application to a P-Type Modulation Doped Structure

Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 793 KB

1993

91

Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells

Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 468 KB

1996

92

Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Hiroki, Masanobu, Kumakura, Kazuhide, Kobayashi, Yasuyuki, Akasaka, Tetsuya, Makimoto, Toshiki, Yamamoto, Hideki

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 655 KB

english, 2014

93

Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine

Saito, Hisao, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 623 KB

1996

94

In-Situ STM Observation of GaAs Surfaces after Nitridation

Makimoto, Toshiki, Kasu, Makoto, Benchimol, Jean L., Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 737 KB

1997

95

Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy

Kasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 1.08 MB

1997

96

Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 77 KB

english, 2000

97

Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 53 KB

english, 2000

98

Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy

Wang, Chengxin, Maeda, Narihiko, Tsubaki, Kotaro, Kobayashi, Naoki, Makimoto, Toshiki

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 192 KB

english, 2004

99

Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN

Hiroki, Masanobu, Kumakura, Kazuhide, Makimōto, Toshiki, Kobayashi, Naoki, Kobayashi, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 204 KB

english, 2004

100

Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors

Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 209 KB

english, 2004