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51

[IRE 1967 International Electron Devices Meeting - ()] 1967 International Electron Devices Meeting - A quantitative theory of 1/f type noise due to interface states in thermally oxidized silicon

Nicollian, E.H., Melchior, H.

Year:

1967

Language:

english

File:

PDF, 98 KB

english, 1967

52

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Impact of gate area on plasma charging damage: the "reverse" antenna effect

Krishnan, A.T., Krishnan, S., Nicollian, P.

Year:

2002

Language:

english

File:

PDF, 253 KB

english, 2002

53

[IEEE 1996 54th Annual Device Research Conference Digest - Santa Barbara, CA, USA (24-26 June 1996)] 1996 54th Annual Device Research Conference Digest - Tunneling in nanoscale silicon particles embedded in an a-SiO/sub 2/ matrix

Tsu, R., Boeringer, D.W., Nicollian, E.H.

Year:

1996

Language:

english

File:

PDF, 129 KB

english, 1996

54

Errors in Projecting Gate Dielectric Reliability From Fowler–Nordheim Stress to Direct-Tunneling Operation

Nicollian, P.E.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 136 KB

english, 2009

55

[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - Ultrathin nitrogen-profile engineered gate dielectric films

Hattangady, S.V., Kraft, R., Grider, D.T., Douglas, M.A., Brown, G.A., Tiner, P.A., Kuehne, J.W., Nicollian, P.E., Pas, M.F.

Year:

1996

Language:

english

File:

PDF, 409 KB

english, 1996

56

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - The Traps that cause Breakdown in Deeply Scaled SiON Dielectrics

Nicollian, Paul E., Krishnan, Anand T., Chancellor, Cathy A., Khamankar, Rajesh B.

Year:

2006

Language:

english

File:

PDF, 184 KB

english, 2006

57

Laplace transform method of measuring the distribution of Si–SiO2 barrier heights: Implementation

Nicollian, Edward H., Babić, Davorin

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.26 MB

english, 1995

58

A Quantitative Theory of 1/ f Type Noise Due to Interface States in Thermally Oxidized Silicon

Nicollian, E. H., Melchior, H.

Journal:

Bell System Technical Journal

Year:

1967

Language:

english

File:

PDF, 5.26 MB

english, 1967

59

Investigation of heterojunctions for MIS devices with oxygen-doped AlxGa1−xAs on n-type GaAs

H. C. Casey, A. Y. Cho, D. V. Lang, E. H. Nicollian, P. W. Foy

Year:

1979

Language:

english

File:

PDF, 775 KB

english, 1979

60

Insulator Films and Their Interfaces in Semiconductor Devices

Nicollian, E. H.

Journal:

Journal of Vacuum Science and Technology

Year:

1972

Language:

english

File:

PDF, 262 KB

english, 1972

61

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - A 1.2 V, 0.1 μm gate length CMOS technology: design and process issues

Rodder, M., Hattangady, S., Yu, N., Shiau, W., Nicollian, P., Laaksonen, T., Chao, C.P., Mehrotra, M., Lee, C., Murtaza, S., Aur, S.

Year:

1998

Language:

english

File:

PDF, 409 KB

english, 1998

62

Avalanche Injection of Electrons into Insulating SiO2 Using MOS Structures

Nicollian, E. H.

Journal:

Journal of Applied Physics

Year:

1970

Language:

english

File:

PDF, 654 KB

english, 1970

63

Electrical properties of a silicon quantum dot diode

E. H. Nicollian, R. Tsu

Year:

1993

Language:

english

File:

PDF, 1.01 MB

english, 1993

64

Surface Passivation of Semiconductors

E. H. Nicollian

Year:

1971

Language:

english

File:

PDF, 1.23 MB

english, 1971

65

Slow conductance oscillations in nanoscale silicon clusters of quantum dots

R. Tsu, X. Li, E. H. Nicollian

Year:

1994

Language:

english

File:

PDF, 682 KB

english, 1994

66

Laplace transform method of measuring the distribution of Si–SiO2 barrier heights: Basic principles

Babić, Davorin, Nicollian, Edward H.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.35 MB

english, 1995

67

Passivation of defects in polycrystalline superlattices and quantum well structures

Tsu, Raphael, Nicollian, Edward H., Reisman, Arnold

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 550 KB

english, 1989

68

Abstract: Influence of a thin oxide layer between metal and semiconductor on Schottky diode behavior

Nicollian, E. H.

Journal:

Journal of Vacuum Science and Technology

Year:

1976

Language:

english

File:

PDF, 320 KB

english, 1976

69

Low-temperature annealing of As-implanted Ge

Hattangady, S. V., Fountain, G. G., Nicollian, E. H., Markunas, R. J.

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 971 KB

english, 1988

70

Influence of a thin oxide layer between metal and semiconductor on Schottky diode behavior

Nicollian, E. H.

Journal:

Journal of Vacuum Science and Technology

Year:

1976

Language:

english

File:

PDF, 4.17 MB

english, 1976

71

MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSION

Nicollian, E. H.

Journal:

Applied Physics Letters

Year:

1967

Language:

english

File:

PDF, 413 KB

english, 1967

72

[IEEE 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual - San Jose, CA, USA (10-13 April 2000)] 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) - Experimental evidence for voltage driven breakdown models in ultrathin gate oxides

Nicollian, P.E., Hunter, W.R., Hu, J.C.

Year:

2000

Language:

english

File:

PDF, 843 KB

english, 2000

73

[IEEE Proceedings of 1995 IEEE International Reliability Physics Symposium - Las Vegas, NV (1995.04.4-1995.04.6)] 33rd IEEE International Reliability Physics Symposium - Model for the leakage instability in unprogrammed amorphous silicon antifuse devices

Nicollian, P.E., Hunter, W.R.

Year:

1995

Language:

english

File:

PDF, 480 KB

english, 1995

74

Accurate measurement of trivalent silicon interface trap density using small signal steady-state methods

Miller, Jimmie A., Blat, Catherine, Nicollian, Edward H.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 959 KB

english, 1989

75

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Gate dielectric reliability in the sub threshold regime

Nicollian, Paul E., Chancellor, Cathy A., Krishnan, Anand T.

Year:

2010

Language:

english

File:

PDF, 298 KB

english, 2010

76

[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes

Khamankar, R., Bu, H., Bowen, C., Chakravarthi, S., Chidambaram, P.R., Bevan, M., Krishnan, A., Niimi, H., Smith, B., Blatchford, J., Hornung, B., Lu, J.P., Nicollian, P., Kirkpatrick, B., Miles, D.,

Year:

2004

Language:

english

File:

PDF, 185 KB

english, 2004

77

[IEEE 6th Annual Reliability Physics Symposium (IEEE) - Los Angeles, CA, USA (1967.11.6-1967.11.8)] 6th Annual Reliability Physics Symposium (IEEE) - Creation of Interface States by Avalanche Effect

Nicollian, E. H., Goetzberger, A.

Year:

1967

Language:

english

File:

PDF, 1.23 MB

english, 1967

78

[IEEE 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual - San Diego, CA, USA (23-25 March 1999)] 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) - Low voltage stress-induced-leakage-current in ultrathin gate oxides

Nicollian, P.E., Rodder, M., Grider, D.T., Chen, P., Wallace, R.M., Hattangady, S.V.

Year:

1999

Language:

english

File:

PDF, 430 KB

english, 1999

79

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - Positive bias temperature instability induced positive charge generation in P+ Poly/SiON pMOSFET's

Hokyung Park,, Nicollian, Paul E., Reddy, Vijay

Year:

2012

Language:

english

File:

PDF, 153 KB

english, 2012

80

[IEEE 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Phoenix, AZ, USA (2007.04.15-2007.04.19)] 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Analytic Extension of the Cell-Based Oxide Breakdown Model to Full Percolation and its Implications

Krishnan, Anand T., Nicollian, Paul E.

Year:

2007

Language:

english

File:

PDF, 417 KB

english, 2007

81

The Profile of Electrically Active Phosphorus in Silicon after Thermal Oxidation

Nicollian, Edward H.

Journal:

Journal of The Electrochemical Society

Year:

1994

Language:

english

File:

PDF, 653 KB

english, 1994

82

Undercut Isolation—A Technique for Closely Spaced and Self-Aligned Metalization Patterns for MOS Integrated Circuits

Berglund, C. N., Clemens, J. T., Nicollian, E. H.

Journal:

Journal of The Electrochemical Society

Year:

1973

Language:

english

File:

PDF, 1.19 MB

english, 1973

83

Nonequilibrium Effects in Quasi-Static MOS Measurements

Kuhn, M., Nicollian, E. H.

Journal:

Journal of The Electrochemical Society

Year:

1971

Language:

english

File:

PDF, 503 KB

english, 1971

84

Effect of Oxide Hydration on Surface Potential of Oxidized P-Type Silicon

Kuper, A. B., Nicollian, E. H.

Journal:

Journal of The Electrochemical Society

Year:

1965

Language:

english

File:

PDF, 342 KB

english, 1965

85

MOS Characterization of Low Leakage Native Oxides on AlGaAs

Nicollian, E. H.

Journal:

Journal of The Electrochemical Society

Year:

1978

Language:

english

File:

PDF, 300 KB

english, 1978

86

[IEEE 12th International Reliability Physics Symposium - Las Vegas, NV, USA (1974.04.2-1974.04.4)] 12th International Reliability Physics Symposium - Interface Instabilities

Nicollian, B. H.

Year:

1974

Language:

english

File:

PDF, 8.01 MB

english, 1974

87

SPIE Proceedings [SPIE Microelectronic Manufacturing - Santa Clara, CA (Sunday 20 September 1998)] Microelectronic Device Technology II - Remote plasma nitrided oxides for ultrathin gate dielectric applications

Hattangady, Sunil, Grider, D. T., Kraft, Robert, Shiau, Wei-Tsun, Douglas, Monte A., Nicollian, P., Rodder, Mark, Brown, George A., Chatterjee, Amitava, Hu, Jerry C., Aur, S., Tsai, H.-L., Chapman, R.

Year:

1998

Language:

english

File:

PDF, 954 KB

english, 1998

88

ChemInform Abstract: MOS CHARACTERIZATION OF LOW LEAKAGE NATIVE OXIDES ON ALUMINUM GALLIUM ARSENIDE

NICOLLIAN, E. H., SCHWARTZ, B., KOSZI, L. A., SCHUMAKER, N. E.

Journal:

Chemischer Informationsdienst

Year:

1978

File:

PDF, 125 KB

1978

89

ChemInform Abstract: UNDERCUT ISOLATION-A TECHNIQUE FOR CLOSELY SPACED AND SELF-ALIGNED METALIZATION PATTERNS FOR MOS INTEGRATED CIRCUITS

BERGLUND, C. N., CLEMENS, J. T., NICOLLIAN, E. H.

Journal:

Chemischer Informationsdienst

Year:

1973

File:

PDF, 131 KB

1973