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1

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

Rhode, S. L., Fu, W. Y., Moram, M. A., Massabuau, F. C.-P., Kappers, M. J., McAleese, C., Oehler, F., Humphreys, C. J., Dusane, R. O., Sahonta, S.–L.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.29 MB

english, 2014

2

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

Massabuau, F. C.-P., Sahonta, S.-L., Trinh-Xuan, L., Rhode, S., Puchtler, T. J., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.86 MB

english, 2012

3

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Lee, L. Y., Massabuau, F., Sahonta, S. L., Frentrup, M., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Daws

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.40 MB

english, 2018

4

Migration of Dislocations in Strained GaN Heteroepitaxial Layers

S.-L. Sahonta, M.Q. Baines, D. Cherns, H. Amano, F.A. Ponce

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 142 KB

english, 2002

5

Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE

A. Adikimenakis, S.-L. Sahonta, G.P. Dimitrakopulos, J. Domagala, Th. Kehagias, Ph. Komninou, E. Iliopoulos, A. Georgakilas

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.24 MB

english, 2009

6

CBED study of grain misorientations in AlGaN epilayers

S.-L. Sahonta, D. Cherns, R. Liu, F.A. Ponce, H. Amano, I. Akasaki

Journal:

Ultramicroscopy

Year:

2005

Language:

english

File:

PDF, 398 KB

english, 2005

7

Defect and stress control of AlGaN for fabrication of high performance UV light emitters

H. Amano, A. Miyazaki, K. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, I. Akasaki, R. Liu, A. Bell, F. A. Ponce, S. Sahonta, D. Cherns

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 104 KB

english, 2004

8

Structural properties of ultrathin InGaN/GaN quantum wells

S.-L. Sahonta, Ph. Komninou, G. P. Dimitrakopulos, C. Salcianu, E. J. Thrush, Th. Karakostas

Journal:

physica status solidi (a)

Year:

2008

Language:

english

File:

PDF, 682 KB

english, 2008

9

Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy

G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, S.-L. Sahonta, J. Kioseoglou, N. Vouroutzis, I. Hausler, W. Neumann, E. Iliopoulos, A. Georgakilas, Th. Karakostas

Journal:

physica status solidi (a)

Year:

2008

Language:

english

File:

PDF, 384 KB

english, 2008

10

High-efficiency InGaN/GaN quantum well structures on large area silicon substrates

D. Zhu, C. McAleese, M. Häberlen, M. J. Kappers, N. Hylton, P. Dawson, G. Radtke, M. Couillard, G. A. Botton, S.-L. Sahonta, C. J. Humphreys

Journal:

physica status solidi (a)

Year:

2012

Language:

english

File:

PDF, 398 KB

english, 2012

11

Electron microscopy investigation of extended defects in a-plane gallium nitride layers grown on r-plane sapphire by molecular beam epitaxy

J. Smalc-Koziorowska, Ph. Komninou, S.-L. Sahonta, J. Kioseoglou, G. Tsiakatouras, A. Georgakilas

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 216 KB

english, 2008

12

Properties of trench defects in InGaN/GaN quantum well structures

Sahonta, S.-L., Kappers, M. J., Zhu, D., Puchtler, T. J., Zhu, T., Bennett, S. E., Humphreys, C. J., Oliver, R. A.

Journal:

phys stat sol (a)

Year:

2013

Language:

english

File:

PDF, 634 KB

english, 2013

13

Towards a better understanding of trench defects in InGaN/GaN quantum wells

Massabuau, F C-P, Trinh-Xuan, L, Lodié, D, Sahonta, S-L, Rhode, S, Thrush, E J, Oehler, F, Kappers, M J, Humphreys, C J, Oliver, R A

Journal:

Journal of Physics Conference Series

Year:

2013

Language:

english

File:

PDF, 943 KB

english, 2013

14

Strong room temperature magnetism in highly resistive strained thin films of BiFe[sub 0.5]Mn[sub 0.5]O[sub 3]

Choi, E.-M., Patnaik, S., Weal, E., Sahonta, S.-L., Wang, H., Bi, Z., Xiong, J., Blamire, M. G., Jia, Q. X., MacManus-Driscoll, J. L.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 725 KB

english, 2011

15

Strong correlated pinning at high growth rates in YBa2Cu3O7−x thin films with Ba2YNbO6 additions

Ercolano, G., Bianchetti, M., Sahonta, S.-L., Kursumovic, A., Lee, J. H., Wang, H., MacManus-Driscoll, J. L.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.56 MB

english, 2014

16

Erratum: “Strong room temperature magnetism in highly resistive strained thin films of BiFe[sub 0.5]Mn[sub 0.5]O[sub 3]” [Appl. Phys. Lett. 98, 012509 (2011)]

Choi, E.-M., Patnaik, S., Weal, E., Sahonta, S.-L., Mecklenburg, G., Wang, H., Bi, Z., Xiong, J., Blamire, M. G., Jia, Q. X., MacManus-Driscoll, J. L.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 297 KB

english, 2011

17

Step-induced misorientation of GaN grown on r-plane sapphire

Smalc-Koziorowska, J., Dimitrakopulos, G. P., Sahonta, S.-L., Tsiakatouras, G., Georgakilas, A., Komninou, Ph.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 703 KB

english, 2008

18

Mg Doping Affects Dislocation Core Structures in GaN

Rhode, S. K., Horton, M. K., Kappers, M. J., Zhang, S., Humphreys, C. J., Dusane, R. O., Sahonta, S. -L., Moram, M. A.

Journal:

Physical Review Letters

Year:

2013

Language:

english

File:

PDF, 229 KB

english, 2013

19

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

Sahonta, S.-L., Dimitrakopulos, G. P., Kehagias, Th., Kioseoglou, J., Adikimenakis, A., Iliopoulos, E., Georgakilas, A., Kirmse, H., Neumann, W., Komninou, Ph.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 460 KB

english, 2009

20

The generation of misfit dislocations in facet-controlled growth of AlGaN∕GaN films

Cherns, D., Sahonta, S.-L., Liu, R., Ponce, F. A., Amano, H., Akasaki, I.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 505 KB

english, 2004

21

SCM and SIMS investigations of unintentional doping in III-nitrides

Kappers, M. J., Zhu, T., Sahonta, S.-L., Humphreys, C. J., Oliver, R. A.

Journal:

Physica status solidi

Year:

2015

Language:

english

File:

PDF, 1.73 MB

english, 2015

22

Effects of Si-doping on the Microstructure of AlGaN/GaN Multiple-quantum-well

Liu, R., Ponce, F. A., Sahonta, S-L., Cherns, D., Amano, H., Akasaki, I.

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 1.52 MB

english, 2003

23

Ferromagnetism in Co-doped (La,Sr)TiO3

T. Fix, M. Liberati, H. Aubriet, S. Sahonta, R. Bali, C. Becker, D. Ruch, J. L. Macmanus-driscoll, E. Arenholz, M. G. Blamire

Year:

2009

Language:

english

File:

PDF, 1.12 MB

english, 2009

24

A dissociation mechanism for the [a+c] dislocation in GaN

Nellist, P D, Hirsch, P B, Rhode, S, Horton, M K, Lozano, J G, Yasuhara, A, Okunishi, E, Zhang, S, Sahonta, S-L, Kappers, M J, Humphreys, C J, Moram, M A

Journal:

Journal of Physics Conference Series

Year:

2014

Language:

english

File:

PDF, 900 KB

english, 2014

25

Microstructure of defects in InGaN/GaN quantum well heterostructures

Sahonta, S-L, Komninou, P h, Dimitrakopulos, G P, Kehagias, Th, Kioseoglou, J, Karakostas, T h, Salcianu, C, Thrush, E J

Journal:

Journal of Physics Conference Series

Year:

2008

Language:

english

File:

PDF, 1.82 MB

english, 2008

26

Molecular beam epitaxy of free-standing bulk wurtzite Al x Ga 1-x N layers using a highly efficient RF plasma source

Novikov, S. V., Staddon, C. R., Sahonta, S.-L., Oliver, R. A., Humphreys, C. J., Foxon, C. T.

Journal:

Physica status solidi

Year:

2016

Language:

english

File:

PDF, 370 KB

english, 2016

27

Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source

Novikov, S.V., Staddon, C.R., Sahonta, S.-L., Oliver, R.A., Humphreys, C.J., Foxon, C.T.

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 672 KB

english, 2016

28

n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon

Kakanakova-Georgieva, A., Sahonta, S.-L., Nilsson, D., Trinh, X. T., Son, N. T., Janzén, E., Humphreys, C. J.

Journal:

Journal of Materials Chemistry C

Year:

2016

Language:

english

File:

PDF, 875 KB

english, 2016

29

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

Muhammed, M. M., Roldan, M. A., Yamashita, Y., Sahonta, S.-L., Ajia, I. A., Iizuka, K., Kuramata, A., Humphreys, C. J., Roqan, I. S.

Journal:

Scientific Reports

Year:

2016

Language:

english

File:

PDF, 1.76 MB

english, 2016

30

Dislocation core structures in (0001) InGaN

Rhode, S. L., Horton, M. K., Sahonta, S.-L., Kappers, M. J., Haigh, S. J., Pennycook, T. J., McAleese, C., Humphreys, C. J., Dusane, R. O., Moram, M. A.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.64 MB

english, 2016

31

Rapid open-air deposition of uniform, nanoscale, functional coatings on nanorod arrays

Musselman, K. P., Muñoz-Rojas, D., Hoye, R. L. Z., Sun, H., Sahonta, S.-L., Croft, E., Böhm, M. L., Ducati, C., MacManus-Driscoll, J. L.

Journal:

Nanoscale Horizons

Year:

2017

Language:

english

File:

PDF, 1.87 MB

english, 2017

32

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

Hammersley, S., Kappers, M. J., Massabuau, F. C.-P., Sahonta, S.-L., Dawson, P., Oliver, R. A., Humphreys, C. J.

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.04 MB

english, 2015

33

Photoluminescence studies of cubic GaN epilayers

Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Sahonta, S. L., Frentrup, M., Nilsson, D., Ward, P. J., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Dawso

Journal:

physica status solidi (b)

Year:

2017

Language:

english

File:

PDF, 863 KB

english, 2017

34

Dislocation core structures in Si-doped GaN

Rhode, S. L., Horton, M. K., Fu, W. Y., Sahonta, S.-L., Kappers, M. J., Pennycook, T. J., Humphreys, C. J., Dusane, R. O., Moram, M. A.

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1020 KB

english, 2015

35

Amorphous molybdenum silicon superconducting thin films

Bosworth, D., Sahonta, S.-L., Hadfield, R. H., Barber, Z. H.

Journal:

Year:

2015

Language:

english

File:

PDF, 906 KB

english, 2015

36

Properties of GaN nanowires with Sc x Ga 1 −x N insertion

Bao, A., Goff, L. E., Zhu, T., Sahonta, S.-L., Ritchie, D. A., Joyce, H. J., Moram, M. A., Oliver, R. A.

Journal:

physica status solidi (b)

Year:

2017

Language:

english

File:

PDF, 1.84 MB

english, 2017