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101

Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane

Narita, Yuzuru, Konno, Atsushi, Nakazawa, Hideki, Itoh, Takashi, Yasui, Kanji, Endoh, Tetsuo, Suemitsu, Maki

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 248 KB

english, 2007

102

Influence of Silicon Wafer Loading Ambient on Chemical Composition and Thickness Uniformity of Sub-5-nm-Thick Oxide Films

Endoh, Tetsuo, Kimura, Yasutaka, Lenski, Markus, Masuoka, Fujio

Journal:

Japanese Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 106 KB

english, 2001

103

Fabrication Method of Sub-100 nm Metal–Oxide–Semiconductor Field-Effect Transistor with Thick Gate Oxide

Singh, Vipul, Inokawa, Hiroshi, Endoh, Tetsuo, Satoh, Hiroaki

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 788 KB

english, 2010

104

Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics

Arikawa, Mitsuhiro, Muraguchi, Masakazu, Hatsugai, Yasuhiro, Shiraishi, Kenji, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 207 KB

english, 2012

105

Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition

Komae, Yasuaki, Yasui, Kanji, Suemitsu, Maki, Endoh, Tetsuo, Ito, Takashi, Nakazawa, Hideki, Narita, Yuzuru, Takata, Masasuke, Akahane, Tadashi

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 388 KB

english, 2009

106

The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits

Endoh, Tetsuo, Iga, Fumitaka, Ikeda, Shoji, Miura, Katsuya, Hayakawa, Jun, Kamiyanagi, Masashi, Hasegawa, Haruhiro, Hanyu, Takahiro, Ohno, Hideo

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 636 KB

english, 2010

107

Nonvolatile Low Power 16-bit/32-bit Magnetic Tunnel Junction Based Binary Counter and Its Scaling

Togashi, Shuta, Ohsawa, Takashi, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 156 KB

english, 2012

108

Numerical Analysis of Pulse Wave Propagation in Lützow-Holm Bay of the Antarctic Ocean Calculated by the Parabolic Equation Method

Tsuchiya, Takenobu, Matsumoto, Sayuri, Anada, Tetsuo, Endoh, Nobuyuki

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 639 KB

english, 2010

109

Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme

Iga, Fumitaka, Yoshida, Yasuhiro, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1007 KB

english, 2012

110

Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell

Muraguchi, Masakazu, Sakurai, Yoko, Takada, Yukihiro, Shigeta, Yasuteru, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi, Nomura, Shintaro, Shiraishi, Kenji, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 597 KB

english, 2011

111

High-Performance Buried-Gate Surrounding Gate Transistor for Future Three-Dimensional Devices

Iwai, Makoto, Yamamoto, Yasue, Nishi, Ryohsuke, Sakuraba, Hiroshi, Endoh, Tetsuo, Masuoka, Fujio

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 197 KB

english, 2004

112

[IEEE 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Rohnert Park, CA, USA (2015.10.5-2015.10.8)] 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Challenge of MTJ-based nonvolatile logic-in-memory architecture for ultra low-power and highly dependable VLSI computing

Hanyu, Takahiro, Natsui, Masanori, Suzuki, Daisuke, Mochizuki, Akira, Onizawa, Naoya, Ikeda, Shoji, Endoh, Tetsuo, Ohno, Hideo

Year:

2015

File:

PDF, 453 KB

2015

113

Landau–Lifshitz–Gilbert micromagnetic simulation on spin transfer torque efficiency of sub-30 nm perpendicular magnetic tunnel junctions with etching damage

Ito, Kenchi, Ohuchida, Satoshi, Muraguchi, Masakazu, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.06 MB

english, 2015

114

[IEEE OCEANS 2008 - Quebec City, QC, Canada (2008.09.15-2008.09.18)] OCEANS 2008 - Analysis of characteristics of sound propagation in Antarctic Ocean by parabolic equation method

Tsuchiya, Takenobu, Anada, Tetsuo, Endoh, Nobuyuki, Ushio, Shuki

Year:

2008

Language:

english

File:

PDF, 1.39 MB

english, 2008

115

An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories

Endoh, Tetsuo, Koike, Hiroki, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo

Journal:

IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Year:

2016

Language:

english

File:

PDF, 2.80 MB

english, 2016

116

Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode

Sato, Soshi, Yamabe, Kikuo, Endoh, Tetsuo, Niwa, Masaaki

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.53 MB

english, 2016

117

Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

Miura, Sadahiko, Honjo, Hiroaki, Kinoshita, Keizo, Tokutome, Keiichi, Koike, Hiroaki, Ikeda, Shoji, Endoh, Tetsuo, Ohno, Hideo

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.59 MB

english, 2015

118

Serum Inorganic Fluoride Levels in Mildly Obese Patients During and After Sevoflurane Anesthesia

Higuchi, Hideyuki, Satoh, Tetsuo, Arimura, Shinnya, Kanno, Masuyuki, Endoh, Ryoichi

Journal:

Anesthesia & Analgesia

Year:

1993

Language:

english

File:

PDF, 356 KB

english, 1993

119

Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

Hanyu, Takahiro, Endoh, Tetsuo, Suzuki, Daisuke, Koike, Hiroki, Ma, Yitao, Onizawa, Naoya, Natsui, Masanori, Ikeda, Shoji, Ohno, Hideo

Journal:

Proceedings of the IEEE

Year:

2016

Language:

english

File:

PDF, 5.36 MB

english, 2016

120

Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications

Suzuki, Daisuke, Natsui, Masanori, Mochizuki, Akira, Miura, Sadahiko, Honjo, Hiroaki, Kinoshita, Keizo, Sato, Hideo, Ikeda, Shoji, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro

Journal:

IEICE Electronics Express

Year:

2013

Language:

english

File:

PDF, 1.05 MB

english, 2013

121

Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme

Matsunaga, Shoun, Mochizuki, Akira, Sakimura, Noboru, Nebashi, Ryusuke, Sugibayashi, Tadahiko, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro

Journal:

IEICE Electronics Express

Year:

2014

Language:

english

File:

PDF, 3.93 MB

english, 2014

122

Design of an energy-efficient 2T-2MTJ nonvolatile TCAM based on a parallel-serial-combined search scheme

Matsunaga, Shoun, Mochizuki, Akira, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro

Journal:

IEICE Electronics Express

Year:

2014

Language:

english

File:

PDF, 2.38 MB

english, 2014

123

FAILURE OF DIBUTYRYL AND 8-BROMO-CYCLIC GMP TO MIMIC THE ANTAGONISTIC ACTION OF CARBACHOL ON THE POSITIVE INOTROPIC EFFECTS OF SYMPATHOMIMETIC AMINES IN THE CANINE ISOLATED VENTRICULAR MYOCARDIUM

ENDOH, Masao, SHIMIZU, Tetsuo

Journal:

The Japanese Journal of Pharmacology

Year:

1979

Language:

english

File:

PDF, 740 KB

english, 1979

124

A compact low-power nonvolatile flip-flop using domain-wall-motion-device-based single-ended structure

Suzuki, Daisuke, Sakimura, Noboru, Natsui, Masanori, Mochizuki, Akira, Sugibayashi, Tadahiko, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro

Journal:

IEICE Electronics Express

Year:

2014

Language:

english

File:

PDF, 1.90 MB

english, 2014

125

Genetic Analysis of Shwachman-Diamond Syndrome: Phenotypic Heterogeneity in Patients Carrying Identical SBDS Mutations

Kawakami, Takako, Mitsui, Tetsuo, Kanai, Masayo, Shirahata, Emi, Sendo, Dai, Kanno, Miyako, Noro, Mizuka, Endoh, Mikiya, Hama, Asahito, Tono, Chikako, Ito, Etsuro, Tsuchiya, Shigeru, Igarashi, Yutaka,

Journal:

The Tohoku Journal of Experimental Medicine

Year:

2005

Language:

english

File:

PDF, 371 KB

english, 2005

126

Visual Evoked Potential Guidance for Posteroventral Pallidotomy in Parkinson''s Disease

YOKOYAMA, Tetsuo, SUGIYAMA, Kenji, NISHIZAWA, Shigeru, RYU, Hiroshi, HINOKUMA, Kaoru, YAMAMOTO, Seiji, ENDOH, Mitsutoshi, OHTA, Seiji, YOKOTA, Naoki, UEMURA, Kenichi

Journal:

Neurologia medico-chirurgica

Year:

1997

Language:

english

File:

PDF, 651 KB

english, 1997

127

Impact of Floating Body Type DRAM with the Vertical MOSFET

NORIFUSA, Yuto, ENDOH, Tetsuo

Journal:

IEICE Transactions on Electronics

Year:

2011

Language:

english

File:

PDF, 801 KB

english, 2011

128

High-frequency level-up shifter based on 0.18 µm vertical metal–oxide–semiconductor field-effect transistors with 70% reduction of overshoot voltage above power supply voltage

Tanoi, Satoru, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 2.50 MB

english, 2015

129

Impact of sub-volume excitation on improving overdrive delay product of sub-40 nm perpendicular magnetic tunnel junctions in adiabatic regime and its beyond

Ohuchida, Satoshi, Ito, Kenchi, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 953 KB

english, 2015

130

Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65nm CMOS Process

IMAMOTO, Takuya, SASAKI, Takeshi, ENDOH, Tetsuo

Journal:

IEICE Transactions on Electronics

Year:

2011

Language:

english

File:

PDF, 2.25 MB

english, 2011

131

Novel Method of Evaluating Accurate Thermal Stability for MTJs using Thermal Disturbance and its Demonstration for Single /Double Interface p-MTJ

Saito, Takashi, Ito, Kenchi, Honjo, Hiroaki, Ikeda, Shoji, Endoh, Tetsuo

Journal:

IEEE Transactions on Magnetics

Year:

2017

Language:

english

File:

PDF, 1.08 MB

english, 2017

132

Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping

Hori, Masahiro, Shinada, Takahiro, Taira, Keigo, Komatsubara, Akira, Ono, Yukinori, Tanii, Takashi, Endoh, Tetsuo, Ohdomari, Iwao

Journal:

Applied Physics Express

Year:

2011

Language:

english

File:

PDF, 715 KB

english, 2011

133

Wave Packet Dynamics in the Spin Torque Transfer

Arikawa, Mitsuhiro, Hatsugai, Yasuhiro, Endoh, Tetsuo, Shiraishi, Kenji

Journal:

Journal of the Physical Society of Japan

Year:

2012

Language:

english

File:

PDF, 210 KB

english, 2012

134

[IEEE 2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) - Hsinchu, Taiwan (2017.4.24-2017.4.27)] 2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) - Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs

Year:

2017

Language:

english

File:

PDF, 915 KB

english, 2017

135

Memory reliability of spintronic materials and devices for disaster-resilient computing against radiation-induced bit flips on the ground

Hirose, Kazuyuki, Kobayashi, Daisuke, Ito, Taichi, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 943 KB

english, 2017

136

Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction

Natsui, Masanori, Tamakoshi, Akira, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 966 KB

english, 2017

137

Ion beam etching process for high-density spintronic devices and its damage recovery by the oxygen showering post-treatment process

Jeong, Junho, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.77 MB

english, 2017

138

Fast neutron tolerance of the perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm

Narita, Yuzuru, Takahashi, Yutaka, Harada, Masahide, Oikawa, Kenichi, Kobayashi, Daisuke, Hirose, Kazuyuki, Sato, Hideo, Ikeda, Shoji, Endoh, Tetsuo, Ohno, Hideo

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.35 MB

english, 2017

139

[IEEE 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2017.4.24-2017.4.27)] 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs

Year:

2017

Language:

english

File:

PDF, 916 KB

english, 2017

140

A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching

Ma, Yitao, Miura, Sadahiko, Honjo, Hiroaki, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 2.05 MB

english, 2017

141

A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme

Ma, Yitao, Miura, Sadahiko, Honjo, Hiroaki, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 2.37 MB

english, 2016

142

Erratum: “Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing” [Appl. Phys. Lett. 106 , 142407 (2015)]

Sato, Soshi, Honjo, Hiroaki, Ikeda, Shoji, Ohno, Hideo, Endoh, Tetsuo, Niwa, Masaaki

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 209 KB

english, 2015

143

(Invited) Interface Control of Advanced Electronic Devices - High-k/Metal Gate System and Magnetic Tunneling Junction

Niwa, Masaaki, Sato, Soshi, Endoh, Tetsuo

Journal:

ECS Transactions

Year:

2017

Language:

english

File:

PDF, 652 KB

english, 2017

144

Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML Type Latch

ENDOH, Tetsuo, KAMIYANAGI, Masashi

Journal:

IEICE Transactions on Electronics

Year:

2009

Language:

english

File:

PDF, 695 KB

english, 2009

145

Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits

IGA, Fumitaka, KAMIYANAGI, Masashi, IKEDA, Shoji, MIURA, Katsuya, HAYAKAWA, Jun, HASEGAWA, Haruhiro, HANYU, Takahiro, OHNO, Hideo, ENDOH, Tetsuo

Journal:

IEICE Transactions on Electronics

Year:

2010

Language:

english

File:

PDF, 10.39 MB

english, 2010

146

Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy

Sato, Soshi, Honjo, Hiroaki, Ikeda, Shoji, Ohno, Hideo, Endoh, Tetsuo, Niwa, Masaaki

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 8.11 MB

english, 2016

147

EVALUATION METHOD OF PAVEMENT SURFACE UNEVENNESS WITH ACCELERATION MEASURED ON A VEHICLE AXLE

TOMISAWA, Ken, ENDOH, Tetsuo, OOSHIMA, Tomohiko, OKABE, Toshiyuki, KANAI, Toshihiro

Journal:

Journal of Japan Society of Civil Engineers Ser E1 (Pavement Engineering)

Year:

2011

File:

PDF, 726 KB

2011

148

Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

Sasaki, Taro, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.51 MB

english, 2018

149

Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

Miyamoto, Yu, Handa, Hiroyuki, Saito, Eiji, Konno, Atsushi, Narita, Yuzuru, Suemitsu, Maki, Fukidome, Hirokazu, Ito, Takashi, Yasui, Kanji, Nakazawa, Hideki, Endoh, Tetsuo

Journal:

e-Journal of Surface Science and Nanotechnology

Year:

2009

Language:

english

File:

PDF, 296 KB

english, 2009

150

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Fukuda, Etsuo, Endoh, Tetsuo, Ishikawa, Takashi, Izunome, Koji, Kamijo, Kazutaka, Miyashita, Moriya, Sakamoto, Takao, Kageshima, Hiroyuki

Journal:

e-Journal of Surface Science and Nanotechnology

Year:

2017

Language:

english

File:

PDF, 4.13 MB

english, 2017