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51

Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry

Goto, Daisuke, Hijikata, Yasuto, Yagi, Shuhei, Yaguchi, Hiroyuki

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 962 KB

english, 2015

52

Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime

Yamamoto, Takeshi, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 137 KB

english, 2008

53

Control of intermediate-band configuration in GaAs:N δ-doped superlattice

Osada, Kazuki, Suzuki, Tomoya, Yagi, Shuhei, Naitoh, Shunya, Shoji, Yasushi, Hijikata, Yasuto, Okada, Yoshitaka, Yaguchi, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 722 KB

english, 2015

54

Growth Rate Enhancement of (000\bar1)-Face Silicon–Carbide Oxidation in Thin Oxide Regime

Yamamoto, Takeshi, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Japanese Journal of Applied Physics

Year:

2007

File:

PDF, 773 KB

2007

55

Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry

Iida, Takeshi, Tomioka, Yuichi, Yoshimoto, Kazuo, Midorikawa, Masahiko, Tukada, Hiroyuki, Orihara, Misao, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshikawa, Masahito, Itoh, Hisayoshi, Ishida, Yuuki, Yosh

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 102 KB

english, 2002

56

Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry

Goto, Daisuke, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 918 KB

english, 2015

57

Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments

Yokoseki, Takashi, Abe, Hiroshi, Makino, Takahiro, Onoda, Shinobu, Tanaka, Yuki, Kandori, Mikio, Yoshie, Toru, Hijikata, Yasuto, Ohshima, Takeshi

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 405 KB

english, 2015

58

Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

Ohshima, Takeshi, Yokoseki, Takashi, Murata, Koichi, Matsuda, Takuma, Mitomo, Satoshi, Abe, Hiroshi, Makino, Takahiro, Onoda, Shinobu, Hijikata, Yasuto, Tanaka, Yuki, Kandori, Mikio, Okubo, Shuichi, Y

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 660 KB

english, 2016

59

Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices

Suzuki, Tomoya, Osada, Kazuki, Yagi, Shuhei, Naitoh, Shunya, Shoji, Yasushi, Hijikata, Yasuto, Okada, Yoshitaka, Yaguchi, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 971 KB

english, 2015

60

Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen $\delta$-Doped GaAs

Takamiya, Kengo, Fukushima, Toshiyuki, Yagi, Shuhei, Hijikata, Yasuto, Mochizuki, Toshimitsu, Yoshita, Masahiro, Akiyama, Hidefumi, Kuboya, Shigeyuki, Onabe, Kentaro, Katayama, Ryuji, Yaguchi, Hiroyuk

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 673 KB

english, 2012

61

Unified theory of silicon carbide oxidation based on the Si and C emission model

Goto, Daisuke, Hijikata, Yasuto

Journal:

Journal of Physics D Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.25 MB

english, 2016

62

Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature

Matsuda, Takuma, Yokoseki, Takashi, Mitomo, Satoshi, Murata, Koichi, Makino, Takahiro, Abe, Hiroshi, Takeyama, Akinori, Onoda, Shinobu, Tanaka, Yuki, Kandori, Mikio, Yoshie, Toru, Hijikata, Yasuto, Oh

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 320 KB

english, 2016

63

Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers

Miyano, Yutaro, Asafuji, Ryosuke, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Year:

2015

Language:

english

File:

PDF, 3.49 MB

english, 2015

64

Creation and Functionalization of Defects in SiC by Proton Beam Writing

Ohshima, Takeshi, Honda, Tomoya, Onoda, Shinobu, Makino, Takahiro, Haruyama, Moriyoshi, Kamiya, Tomihiro, Satoh, Takahiro, Hijikata, Yasuto, Kada, Wataru, Hanaizumi, Osamu, Lohrmann, Alexander, Klein,

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 469 KB

english, 2017

65

Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions

Takeyama, Akinori, Matsuda, Takuma, Yokoseki, Takashi, Mitomo, Satoshi, Murata, Koichi, Makino, Takahiro, Onoda, Shinobu, Okubo, Shuichi, Tanaka, Yuki, Kandori, Mikio, Yoshie, Toru, Hijikata, Yasuto,

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 820 KB

english, 2016

66

Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers

Yamagata, Hikaru, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.07 MB

english, 2012

67

Generation of stacking faults in 4H-SiC epilayer induced by oxidation

Asafuji, Ryosuke, Hijikata, Yasuto

Journal:

Materials Research Express

Year:

2018

Language:

english

File:

PDF, 3.19 MB

english, 2018

68

Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface

Sato, Shin-ichiro, Honda, Tomoya, Makino, Takahiro, Hijikata, Yasuto, Lee, Sang-Yun, Ohshima, Takeshi

Journal:

Year:

2018

Language:

english

File:

PDF, 6.51 MB

english, 2018

69

Various Single Photon Sources Observed in SiC Pin Diodes

Tsunemi, Hiroki, Honda, Tomoya, Makino, Takahiro, Onoda, Shinobu, Sato, Shinichiro, Hijikata, Yasuto, Ohshima, Takeshi

Journal:

Materials Science Forum

Year:

2018

Language:

english

File:

PDF, 1.07 MB

english, 2018

70

Physics and Technology of Silicon Carbide Devices || Thermal Oxidation Mechanism of Silicon Carbide

Hijikata, Yasuto

Year:

2012

File:

PDF, 4.92 MB

2012

71

Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate

Hijikata, Yasuto, Asafuji, Ryosuke, Konno, Ryotaro, Akasaka, Yurie, Shinoda, Ryo

Journal:

Year:

2015

File:

PDF, 644 KB

2015

72

Physics and Technology of Silicon Carbide Devices || Thermal Oxidation Mechanism of Silicon Carbide

Hijikata, Yasuto

Year:

2012

Language:

english

File:

PDF, 4.92 MB

english, 2012

73

Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate

Hijikata, Yasuto, Asafuji, Ryosuke, Konno, Ryotaro, Akasaka, Yurie, Shinoda, Ryo

Journal:

Year:

2015

Language:

english

File:

PDF, 644 KB

english, 2015

74

Physics and Technology of Silicon Carbide Devices || Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

Hijikata, Yasuto

Year:

2012

Language:

english

File:

PDF, 1003 KB

english, 2012

75

First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure

Matsushita, Yu-ichiro, Furukawa, Yoritaka, Hijikata, Yasuto, Ohshima, Takeshi

Journal:

Applied Surface Science

Year:

2018

Language:

english

File:

PDF, 1.07 MB

english, 2018

76

Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing

Yamazaki, Yuichi, Chiba, Yoji, Makino, Takahiro, Sato, Shin-Ichiro, Yamada, Naoto, Satoh, Takahiro, Hijikata, Yasuto, Kojima, Kazutoshi, Lee, Sang-Yun, Ohshima, Takeshi

Journal:

Journal of Materials Research

Year:

2018

Language:

english

File:

PDF, 382 KB

english, 2018

77

Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

Hijikata, Yasuto, Horii, Takashi, Furukawa, Yoritaka, Matsushita, Yu-ichiro, Ohshima, Takeshi

Journal:

Journal of Physics Communications

Year:

2018

Language:

english

File:

PDF, 1.07 MB

english, 2018

78

Radiation Response of Negative Gate Biased SiC MOSFETs

Takeyama, Akinori, Makino, Takahiro, Okubo, Shuichi, Tanaka, Yuki, Yoshie, Toru, Hijikata, Yasuto, Ohshima, Takeshi

Journal:

Year:

2019

Language:

english

File:

PDF, 1.41 MB

english, 2019

79

Radiation Response of Negative Gate Biased SiC MOSFETs

Takeyama, Akinori, Makino, Takahiro, Okubo, Shuichi, Tanaka, Yuki, Yoshie, Toru, Hijikata, Yasuto, Ohshima, Takeshi

Journal:

Year:

2019

File:

PDF, 1.41 MB

2019

80

Physics and Technology of Silicon Carbide Devices || Silicon Carbide Power MESFET

Hijikata, Yasuto

Year:

2012

File:

PDF, 1.56 MB

2012

81

Physics and Technology of Silicon Carbide Devices || PECVD Amorphous Silicon Carbide (Î±-SiC) Layers for MEMS Applications

Hijikata, Yasuto

Year:

2012

File:

PDF, 813 KB

2012

82

Physics and Technology of Silicon Carbide Devices || Conductance Deep-Level Transient Spectroscopic Study of 4H- SiC MESFET and Traps

Hijikata, Yasuto

Year:

2012

File:

PDF, 361 KB

2012

83

Physics and Technology of Silicon Carbide Devices || Physics Behind the Ohmic Nature in Silicon Carbide Contacts

Hijikata, Yasuto

Year:

2012

File:

PDF, 5.03 MB

2012

84

Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

Capan, Ivana, Brodar, Tomislav, Yamazaki, Yuichi, Oki, Yuya, Ohshima, Takeshi, Chiba, Yoji, Hijikata, Yasuto, Snoj, Luka, RaduloviÄ, Vladimir

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2020

File:

PDF, 1.76 MB

2020

85

Physics and Technology of Silicon Carbide Devices || Etching of Silicon Carbide Using Chlorine Trifluoride Gas

Hijikata, Yasuto

Year:

2012

File:

PDF, 2.67 MB

2012

86

Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes

Yamazaki, Yuichi, Chiba, Yoji, Sato, Shin Ichiro, Makino, Takahiro, Yamada, Naoto, Satoh, Takahiro, Kojima, Kazutoshi, Hijikata, Yasuto, Tsuchida, Hidekazu, Hoshino, Norihiro, Lee, Sang Yun, Ohshima,

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 1.65 MB

2020

87

Physics and Technology of Silicon Carbide Devices || Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy

Hijikata, Yasuto

Year:

2012

File:

PDF, 1.84 MB

2012

88

Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles

Sato, Shin Ichiro, Narahara, Takuma, Onoda, Shinobu, Yamazaki, Yuichi, Hijikata, Yasuto, Gibson, Brant C., Greentree, Andrew, Ohshima, Takeshi

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 1.41 MB

2020

89

Physics and Technology of Silicon Carbide Devices || High-Power Hexagonal SiC Device: A Large-Signal High- Frequency Analysis

Hijikata, Yasuto

Year:

2012

File:

PDF, 759 KB

2012

90

Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment

Chiba, Yoji, Yamazaki, Yuichi, Sato, Shin Ichiro, Makino, Takahiro, Yamada, Naoto, Satoh, Takahiro, Hijikata, Yasuto, Ohshima, Takeshi

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 817 KB

2020

91

Physics and Technology of Silicon Carbide Devices || Characterization of Defects Evolution in Bulk SiC by Synchrotron X-Ray Imaging

Hijikata, Yasuto

Year:

2012

File:

PDF, 1.50 MB

2012