Volume 154-155; Issue none

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Materials Science and Engineering: B
Volume 154-155; Issue none

Materials Science and Engineering: B

Volume 154-155; Issue none

1

Defect engineering aspects of advanced Ge process modules

C. Claeys, E. Simoen, K. Opsomer, D.P. Brunco, M. Meuris

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 1.63 MB

english, 2008

2

Atomistic modeling of FnVm complexes in pre-amorphized Si

Pedro Lopez, Lourdes Pelaz, María Aboy, G. Impellizeri, S. Mirabella, F. Priolo, E. Napolitani

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 433 KB

english, 2008

3

Diffusion of phosphorus implanted in germanium

Th. Canneaux, D. Mathiot, J.P. Ponpon, S. Roques, S. Schmitt, Ch. Dubois

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 234 KB

english, 2008

4

Effect of annealing under stress on defect structure of Si–Ge

A. Misiuk, N.V. Abrosimov, P. Romanowski, J. Bak-Misiuk, A. Wnuk, B. Surma, W. Wierzchowski, K. Wieteska, W. Graeff, M. Prujszczyk

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 653 KB

english, 2008

5

Evidence of the carrier mobility degradation in highly B-doped ultra-shallow junctions by Hall effect measurements

F. Séverac, F. Cristiano, E. Bedel-Pereira, W. Lerch, S. Paul, H. Kheyrandish

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 373 KB

english, 2008

6

Structural and electrical characterisation of ion-implanted strained silicon

K. Horan, A. Lankinen, L. O’Reilly, N.S. Bennett, P.J. McNally, B.J. Sealy, N.E.B. Cowern, T.O. Tuomi

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 556 KB

english, 2008

7

Study of silicon–germanium interdiffusion from pure germanium deposited layers

Mathieu Gavelle, El Mehdi Bazizi, Emmanuel Scheid, Claude Armand, Pier Francesco Fazzini, Olivier Marcelot, Yves Campidelli, Aomar Halimaoui, Fuccio Cristiano

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 532 KB

english, 2008

8

Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques

E. Gaubas, A. Uleckas, R. Grigonis, V. Sirutkaitis, J. Vanhellemont

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 283 KB

english, 2008

9

Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties

B. Pelletier, M. Juhel, C. Trouiller, D. Beucher, J.L. Autran, P. Morin

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 569 KB

english, 2008

10

Charge of self-interstitials and boron-interstitial pairs as a function of doping concentration

Wolfgang Windl, Roland Stumpf

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 322 KB

english, 2008

11

The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

S.H. Yeong, B. Colombeau, K.R.C. Mok, F. Benistant, C.J. Liu, A.T.S. Wee, G. Dong, L. Chan, M.P. Srinivasan

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 1.13 MB

english, 2008

12

Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects

Maria Aboy, Lourdes Pelaz, Pedro López, E. Bruno, S. Mirabella, E. Napolitani

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 435 KB

english, 2008

13

Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

A. Florakis, N. Misra, C. Grigoropoulos, K. Giannakopoulos, A. Halimaoui, D. Tsoukalas

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 446 KB

english, 2008

14

The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy

P. Castrillo, R. Pinacho, M. Jaraiz, J.E. Rubio, J. Singer

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 481 KB

english, 2008

15

Impact of fluorine co-implantation on B deactivation and leakage currents in low and high energy Ge preamorphised p+n shallow junctions

D. Girginoudi, C. Tsiarapas

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 1.03 MB

english, 2008

16

Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes

A. Sellai, Z. Ouennoughi

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 441 KB

english, 2008

17

Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion

J. Marcon, A. Merabet

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 423 KB

english, 2008

18

Simulation of dopant diffusion and activation during flash lamp annealing

Christoph Zechner, Dmitri Matveev, Nikolas Zographos, Wilfried Lerch, Silke Paul

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 378 KB

english, 2008

19

Investigation of the relaxation behavior of Si1−xCx alloys during epitaxial UHV-CVD growth

I. Ostermay, T. Kammler, A. Naumann, J.W. Bartha, P. Kücher

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 915 KB

english, 2008

20

Thermal stability of Ni–Pt–Ta alloy silicides on epi-Si1−xCx

Jung-Ho Yoo, Hyun-Jin Chang, Byoung-Gi Min, Dae-Hong Ko, Mann-Ho Cho, Hyunchul Sohn, Tae-Wan Lee

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 641 KB

english, 2008

21

Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability

K.R.C. Mok, S.H. Yeong, B. Colombeau, F. Benistant, C.H. Poon, L. Chan, M.P. Srinivasan

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 1.85 MB

english, 2008

22

Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance

G. Larrieu, E. Dubois, D. Yarekha, N. Breil, N. Reckinger, X. Tang, J. Ratajczak, A. Laszcz

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 843 KB

english, 2008

23

Strain mapping in MOSFETS by high-resolution electron microscopy and electron holography

Florian Hüe, Martin Hytch, Florent Houdellier, Etienne Snoeck, Alain Claverie

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 804 KB

english, 2008

24

Preface

Fuccio Cristiano, Anne Lauwers, Peter Pichler, Thomas Feudel, Wolfgang Windl

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 83 KB

english, 2008

25

Challenges for ab initio defect modeling

Peter Deák, Bálint Aradi, Thomas Frauenheim, Adam Gali

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 374 KB

english, 2008

26

Defect and dopant kinetics in laser anneals of Si

A. La Magna, G. Fisicaro, G. Mannino, V. Privitera, G. Piccitto, B.G. Svensson, L. Vines

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 317 KB

english, 2008

27

Segregation of antimony to Si/SiO2 interfaces

C. Steen, P. Pichler, H. Ryssel

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 276 KB

english, 2008

28

Local strains induced in silicon channel by a periodic array of nitride capped poly lines investigated by high resolution X-ray diffraction

Stephanie Escoubas, Helene Brillet, Thomas Mesarotti, Gaetan Raymond, Olivier Thomas, Pierre Morin

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 619 KB

english, 2008

29

Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing

W. Lerch, S. Paul, J. Niess, S. McCoy, J. Gelpey, F. Cristiano, F. Severac, P. Fazzini, A. Martinez-Limia, P. Pichler, H. Kheyrandish, D. Bolze

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 2.06 MB

english, 2008

30

B electrical activation in crystalline and preamorphized Ge

E. Bruno, G. Impellizzeri, S. Mirabella, A.M. Piro, A. Irrera, M.G. Grimaldi

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 371 KB

english, 2008

31

Simulation of the sub-melt laser anneal process in 45 CMOS technology—Application to the thermal pattern effects

A. Colin, P. Morin, F. Cacho, H. Bono, R. Beneyton, M. Bidaud, D. Mathiot, E. Fogarassy

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 419 KB

english, 2008

32

Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon

D. De Salvador, E. Napolitani, S. Mirabella, E. Bruno, G. Impellizzeri, G. Bisognin, E.F. Pecora, F. Priolo, A. Carnera

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 605 KB

english, 2008

33

Impact of inactive dopants in chemical vapor deposition layers on photomodulated optical reflectance

Janusz Bogdanowicz, Fabian Dortu, Trudo Clarysse, Wilfried Vandervorst, Derrick Shaughnessy, Alex Salnik, Lena Nicolaides

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 579 KB

english, 2008

34

Gate length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe

S. Flachowsky, A. Wei, T. Herrmann, R. Illgen, M. Horstmann, R. Richter, H. Salz, W. Klix, R. Stenzel

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 1003 KB

english, 2008

35

Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

M. Mueller, Q.T. Zhao, C. Urban, C. Sandow, D. Buca, S. Lenk, S. Estévez, S. Mantl

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 1.08 MB

english, 2008

36

On the analysis of the activation mechanisms of sub-melt laser anneals

T. Clarysse, J. Bogdanowicz, J. Goossens, A. Moussa, E. Rosseel, W. Vandervorst, D.H. Petersen, R. Lin, P.F. Nielsen, Ole Hansen, G. Merklin, N.S. Bennett, N.E.B. Cowern

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 829 KB

english, 2008

37

Nickel silicides and germanides: Phases formation, kinetics and thermal expansion

C. Perrin, D. Mangelinck, F. Nemouchi, J. Labar, C. Lavoie, C. Bergman, P. Gas

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 434 KB

english, 2008

38

The effect of germanium doping on the evolution of defects in silicon

C.A. Londos, A. Andrianakis, V.V. Emtsev, G.A. Oganesyan, H. Ohyama

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 417 KB

english, 2008

39

Modelling of Boron Trapping at End-of-Range defects in pre-amorphized ultra-shallow junctions

E.M. Bazizi, P.F. Fazzini, C. Zechner, A. Tsibizov, H. Kheyrandish, A. Pakfar, L. Ciampolini, C. Tavernier, F. Cristiano

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 558 KB

english, 2008

40

Experimental investigations and simulation of the deactivation of arsenic during thermal processes after activation by SPER and spike annealing

A. Martinez-Limia, P. Pichler, W. Lerch, S. Paul, H. Kheyrandish, A. Pakfar, C. Tavernier

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 889 KB

english, 2008

41

Ab initio calculations of phosphorus and arsenic clustering parameters for the improvement of process simulation models

Beat Sahli, Kilian Vollenweider, Nikolas Zographos, Christoph Zechner

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 914 KB

english, 2008

42

Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

J. Bhandari, M. Vinet, T. Poiroux, B. Previtali, B. Vincent, L. Hutin, J.P. Barnes, S. Deleonibus, A.M. Ionescu

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 682 KB

english, 2008

43

Editorial Board

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 39 KB

english, 2008

44

author index

Journal:

Materials Science and Engineering: B

Year:

2008

File:

PDF, 102 KB

2008

45

subject index

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 125 KB

english, 2008

46

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

Ook Sang Yoo, Jungwoo Oh, Chang Yong Kang, Byoung Hun Lee, In Shik Han, Won-Ho Choi, Hyuk-Min Kwon, Min-Ki Na, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Jin Suk Wang, Hi-Deok Lee

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 710 KB

english, 2008

47

High-resolution X-ray diffraction by end of range defects in self-amorphized Ge

G. Bisognin, S. Vangelista, E. Bruno

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 355 KB

english, 2008

48

Irradiation-induced defects in SiGe

A. Nylandsted Larsen, A. Bro Hansen, A. Mesli

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 240 KB

english, 2008

49

Phosphorous clustering in germanium-rich silicon germanium

A. Chroneos, H. Bracht, R.W. Grimes, B.P. Uberuaga

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 518 KB

english, 2008

50

E center annealing in SiGe: Stability and charge states

K. Kuitunen, S. Kilpeläinen, J. Slotte, F. Tuomisto

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 236 KB

english, 2008

51

Doping of germanium by phosphorus implantation: Prediction of diffused profiles with simulation

S. Koffel, P. Scheiblin, A. Claverie, V. Mazzocchi

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 249 KB

english, 2008

52

Reduced Pressure–Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

J.M. Hartmann, F. Andrieu, D. Lafond, T. Ernst, Y. Bogumilowicz, V. Delaye, O. Weber, D. Rouchon, A.M. Papon, N. Cherkashin

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 2.36 MB

english, 2008

53

Self-aligned nickel–platinum silicide oxidation

B. Imbert, S. Zoll, P. Garnier, B. Pernet, D. Galpin, R. Beneyton, M. Juhel, P. Mur, V. Carron, O. Thomas

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 840 KB

english, 2008

54

High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

H.H. Radamson, M. Kolahdouz, R. Ghandi, M. Ostling

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 429 KB

english, 2008

55

Long and double hop kinetic Monte Carlo: Techniques to speed up atomistic modeling without losing accuracy

Ignacio Martin-Bragado, Nikolas Zographos, Martin Jaraiz

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 538 KB

english, 2008

56

Evolution of end-of-range defects in silicon-on-insulator substrates

P.F. Fazzini, F. Cristiano, C. Dupré, S. Paul, T. Ernst, H. Kheyrandish, K.K. Bourdelle, W. Lerch

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 630 KB

english, 2008

57

Effects of doping on the elastic properties of silicon

Nicole Santen, Reiner Vianden

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 373 KB

english, 2008

58

Novel enhanced stressors with graded encapsulated SiGe embedded in the source and drain areas

Andreas Naumann, Stephan Kronholz, Anthony Mowry, Ina Ostermay, Helmut Bierstedt, Bernhard Trui, Kornelia Dittmar, Peter Kücher, Johann W. Bartha, Thorsten Kammler

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 347 KB

english, 2008

59

Silicides and germanides for nano-CMOS applications

J.A. Kittl, K. Opsomer, C. Torregiani, C. Demeurisse, S. Mertens, D.P. Brunco, M.J.H. Van Dal, A. Lauwers

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 2.33 MB

english, 2008

60

Optimization of ClusterCarbon™ process parameters for strained Si lattice

Karuppanan Sekar, Wade A. Krull, Thomas N. Horsky, Thomas Feudel, Christian Krüger, Stefan Flachowsky, Ina Ostermay

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 771 KB

english, 2008

61

Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/Ge/SiO2/Si structure

A. Łaszcz, J. Ratajczak, A. Czerwinski, J. Kątcki, V. Srot, F. Phillipp, P.A. van Aken, N. Breil, G. Larrieu, E. Dubois

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 840 KB

english, 2008

62

Differential Hall characterisation of ultrashallow doping in advanced Si-based materials

N.S. Bennett, N.E.B. Cowern, A.J. Smith, M. Kah, R.M. Gwilliam, B.J. Sealy, T.C.Q. Noakes, P. Bailey, D. Giubertoni, M. Bersani

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 451 KB

english, 2008

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