Volume 4; Issue 1-3

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Materials Science in Semiconductor Processing
Volume 4; Issue 1-3

Materials Science in Semiconductor Processing

Volume 4; Issue 1-3

1

The subimplantation model for hydrogenated amorphous carbon films deposited in electron cyclotron resonance plasma

O. Durand-Drouhin, M. Lejeune, R. Bouzerar, M. Benlahsen

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 87 KB

english, 2001

2

Correlation between the microstructure and optical properties of carbon nitride films deposited by rf magnetron sputtering

O. Durand-Drouhin, M. Lejeune, M. Clin, J. Henocque

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 194 KB

english, 2001

3

The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures

K.D. Vernon-Parry, K.F. Abd-El-Rahman, I. Brough, J.H. Evans-Freeman, J. Zhang, A.R. Peaker

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 146 KB

english, 2001

4

New methods for electrical characterization of unipolar directly bonded Si/Si structures permitting quantitative evaluation of their lateral non-uniformity

V.A. Stuchinsky, G.N. Kamaev

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 100 KB

english, 2001

5

Electrical defect study in thin-film SiGe/Si solar cells

A. Daami, A. Zerrai, J.J. Marchand, J Poortmans, G. Brémond

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 121 KB

english, 2001

6

Room temperature oxidation of Cu3Ge and Cu3(Si1−xGex) on Si1−xGex

Hsuan-Han Liang, Jian-Shing Luo, Wen-Tai Lin

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 148 KB

english, 2001

7

Determination of thicknesses and interface roughnesses of GaAs-based and InAs/AlSb-based heterostructures by X-ray reflectometry

O. Durand, V. Berger, R. Bisaro, A. Bouchier, A. De Rossi, X. Marcadet, I. Prévot

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 136 KB

english, 2001

8

A new high sensitive method for determining weak microinhomogeneities in semiconductors

I. Chaikovsky, L. Alperovich, Y. Gurvich, A. Melnikov

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 146 KB

english, 2001

9

High-frequency method to determine SiC crystal conductivity

A.V. Shturbin, I.E. Titkov, V.Yu. Panevin, R.F. Witman

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 105 KB

english, 2001

10

Fast and cheap method to qualitatively measure the thickness and uniformity of ZrO2 thin films

Hugo Águas, António Marques, Rodrigo Martins, Elvira Fortunato

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 144 KB

english, 2001

11

Characterisation of ultraviolet annealed tantalum oxide films deposited by photo-CVD using 172 nm excimer lamp

Jun-Ying Zhang, Vincent Dusastre, Ian W. Boyd

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 149 KB

english, 2001

12

Advanced time-of-flight secondary ion mass spectrometry analyses for application to TFT-LCD

Hiroshi Takatsuji

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 342 KB

english, 2001

13

Characterization of BaTiO3 thin films on p-Si

E.K. Evangelou, N. Konofaos, X. Aslanoglou, S. Kennou, C.B. Thomas

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 130 KB

english, 2001

14

The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures

C Stuer, J Van Landuyt, H Bender, R Rooyackers, G Badenes

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 198 KB

english, 2001

15

Lifetime measurements on Ge wafers for Ge/GaAs solar cells — chemical surface passivation

A. Blondeel, P. Clauws, B. Depuydt

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 114 KB

english, 2001

16

Probe of the vicinal Si(1 1 1) surface by second harmonic phase spectroscopy

D. Schuhmacher, G. Marowsky, A.A. Fedyanin, T.V. Dolgova, O.A. Aktsipetrov

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 209 KB

english, 2001

17

Infrared spectroscopy and transmission electron microscopy of polycrystalline silicon carbide

M. Dkaki, L. Calcagno, A.M. Makthari, V. Raineri

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 164 KB

english, 2001

18

The study on the radial distribution of delta [Oi] in heavily doped Si wafer using X-ray diffraction

Dong-Kun Lee, Don-Ha Hwang, Soon-Hyun Lee, Young-Hee Mun, Bo-Young Lee, Hak-Do Yoo

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 170 KB

english, 2001

19

Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon

A.G. Ulyashin, R. Job, W.R. Fahrner, A.V. Mudryi, A.I. Patuk, I.A. Shakin

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 182 KB

english, 2001

20

Ellipsometric investigations of (1 0 0) GaSb surface under chemical etching and sulfide treatment

E Papis, A Kudła, T.T Piotrowski, K Gołaszewska, E Kamińska, A Piotrowska

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 131 KB

english, 2001

21

Study of Zn-related structural transformations at p-GaAs/Ni/Zn interfaces relative to the formation of an ohmic contact

E. Kamińska, A. Piotrowska, A. Barcz, K. Regiński, P. Dłużewski, M. Kozłowski, E. Dynowska

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 163 KB

english, 2001

22

Non-ideal Schottky barrier model for impedance measurements of materials properties

S. Sikorski, W. Jung

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 140 KB

english, 2001

23

Thermo-photo-voltaic phenomena in an inhomogeneous semiconductor

S. Sikorski, T. Piotrowski, W. Jung

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 142 KB

english, 2001

24

Characterization of deep impurities in semiconductors by terahertz tunneling ionization

S.D. Ganichev, E. Ziemann, I.N. Yassievich, V.I. Perel, W. Prettl

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 125 KB

english, 2001

25

Be- and Mg-ion implantation-induced damage in InSb

A. Declémy, T. Sauvage, E. Kotai, P. Lévêque, M.I. Abd El-Ati

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 119 KB

english, 2001

26

Local optical spectroscopy of HPHT synthetic diamonds, as grown at 1500°C

A. Yelisseyev, Yu. Babich, V. Nadolinny, B. Feigelson, D. Fisher, S. Lawson

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 150 KB

english, 2001

27

The use of hydrogen passivation to fabricate Schottky diodes for DLTS measurements of heavily-doped p+ Si

Y. Tokuda, T. Namizaki, T. Okumura

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 96 KB

english, 2001

28

SCTS:: scanning capacitance transient spectroscopy

A.L. Tóth, L. Dózsa, J. Gyulai, F. Giannazzo, V. Raineri

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 189 KB

english, 2001

29

Formation of ytterbium silicide on (1 1 1) and (0 0 1)Si by solid-state reactions

K.S. Chi, L.J. Chen

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 279 KB

english, 2001

30

Piezoelectric photoacoustic spectra of Zn-doped InGaAlP light-emitting diodes

A. Fukuyama, H. Nagatomo, Y. Akashi, T. Ikari

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 95 KB

english, 2001

31

Local characterisation of large area multicrystalline solar cells by non-destructive mapping

J.P. Boyeaux, A. Kaminski, A. Fave, A. Laugier

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 125 KB

english, 2001

32

Dislocations in Si generated by fatigue at room temperature

N.I. Kato, A. Nishikawa, H. Saka

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 160 KB

english, 2001

33

Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy

F. Giannazzo, P. Musumeci, L. Calcagno, A. Makhtari, V. Raineri

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 161 KB

english, 2001

34

Structural properties of SiO2 films prepared by plasma-enhanced chemical vapor deposition

Fabio Iacona, Giulio Ceriola, Francesco La Via

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 110 KB

english, 2001

35

Improvement of oxide thickness determination on MOS structures using capacitance–voltage measurements at high frequencies

L. Soliman, E. Duval, M. Benzohra, E. Lheurette, K. Ketata, M. Ketata

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 111 KB

english, 2001

36

Scanning capacitance microscopy investigations of SiC structures

O. Bowallius, S. Anand, N. Nordell, G. Landgren, S. Karlsson

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 107 KB

english, 2001

37

Carrier lifetime investigation in 4H–SiC grown by CVD and sublimation epitaxy

P. Grivickas, A. Galeckas, J. Linnros, M. Syväjärvi, R. Yakimova, V. Grivickas, J.A. Tellefsen

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 219 KB

english, 2001

38

Composition analysis of oxidized buried SiC layers in silicon from EFTEM images

W. Attenberger, J.K.N. Lindner, M. Schmid, J.W. Gerlach, B. Stritzker

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 131 KB

english, 2001

39

Material characterization need for SiC-based devices

E. Janzén, A. Henry, J.P. Bergman, A. Ellison, B. Magnusson

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 406 KB

english, 2001

40

The evolution of hydrogen molecule formation in hydrogen-plasma-treated Czochralski silicon

R. Job, A.G. Ulyashin, W.R. Fahrner

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 222 KB

english, 2001

41

Investigation of deep levels in semi-insulating GaAs by means of a thermally activated piezoelectric photoacoustic measurements

T. Ikari, A. Fukuyama, Y. Akashi

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 111 KB

english, 2001

42

Material and device characterization using a correlation spectrum analyzer

G. Ferrari, M. Sampietro

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 122 KB

english, 2001

43

Silicon p–n junctions biased above breakdown used as monitors of carrier lifetime

E. Sciacca, S. Lombardo, D. Patti, M. Ghioni, F. Zappa, E. Rimini, S. Cova

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 145 KB

english, 2001

44

Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity

E. Gaubas, J. Vaitkus, E. Simoen, C. Claeys, J. Vanhellemont

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 197 KB

english, 2001

45

Process control of Si/SiGe heterostructures by X-ray diffraction

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 97 KB

english, 2001

46

Dopant redistribution and formation of electrically active complexes in SiGe

A.Yu. Kuznetsov, J.S. Christensen, E.V. Monakhov, A.-C. Lindgren, H.H. Radamson, A. Nylandsted-Larsen, B.G. Svensson

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 267 KB

english, 2001

47

Silicon melt density — problems of Archimedean technique

Kazutaka Terashima, Kazuya Kanno

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 100 KB

english, 2001

48

Defect analysis of n-type silicon strained layers

E. Simoen, R. Loo, P. Roussel, M. Caymax, H. Bender, C. Claeys, H.-J. Herzog, A. Blondeel, P. Clauws

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 154 KB

english, 2001

49

Imaging of the lateral GOI-defect distribution in silicon MOS wafers with lock-in IR-thermography

S. Huth, O. Breitenstein, U. Lambert, A. Huber

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 273 KB

english, 2001

50

Strain characterisation of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction

A. Armigliato, R. Balboni, S. Frabboni, A. Benedetti, A.G. Cullis, G.P. Carnevale, P. Colpani, G. Pavia

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 167 KB

english, 2001

51

Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy

S. Hens, J. Van Landuyt, H. Bender, W. Boullart, S. Vanhaelemeersch

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 507 KB

english, 2001

52

Statistical analysis of shallow p–n junction leakage increase using XTEM results probabilities

A. Czerwinski, J. Kątcki, A. Poyai, E. Simoen, C. Claeys, J. Ratajczak, E. Gaubas

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 108 KB

english, 2001

53

Competitive delineation of n- and p-doped Si by selective electrochemical etch

G. D’Arrigo, C. Spinella

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 124 KB

english, 2001

54

Influence of the polysilicon doping on the electrical quality of thin oxides: a confrontation between vertical and horizontal furnaces

G. Franco, M. Priulla, G. Renna, G. Scerra

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 482 KB

english, 2001

55

Hydrogen release related to hole injection into SiO2 layers on Si

V.V. Afanas’ev, A. Stesmans

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 90 KB

english, 2001

56

Gate oxide integrity dependence on substrate characteristics and SiO2 thickness

F. Bonoli, P. Godio, G. Borionetti, R. Falster

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 101 KB

english, 2001

57

Characterization and production metrology of gate dielectric films

Alain C. Diebold, Jesse Canterbury, Will Chism, Curt Richter, Nhan Nguyen, Jim Ehrstein, Chad Weintraub

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 188 KB

english, 2001

58

Rapid determination of “slow” states and “fast” states densities using thermally stimulated conductance spectroscopy on metal-oxide semiconductor capacitors

E. Duval, L. Soliman, E. Lheurette, K. Ketata, M. Benzohra, C. Duprat, M. Ketata

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 149 KB

english, 2001

59

High-temperature spreading-resistance profiling for the characterization of impurity distributions in n-type silicon

S. Voss, H. Bracht, N.A. Stolwijk

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 107 KB

english, 2001

60

Towards sub-10 nm carrier profiling with spreading resistance techniques

T Clarysse, P Eyben, T Hantschel, W Vandervorst

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 140 KB

english, 2001

61

Defect transformation study in silicon-on-insulator structures by high-resolution X-Ray diffraction

V.P. Popov, I.V. Antonova, J. Bak-Misiuk, J. Domagala

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 130 KB

english, 2001

62

X-ray reflectivity of silicon on insulator wafers

J. Eymery, F. Rieutord, F. Fournel, D. Buttard, H. Moriceau

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 174 KB

english, 2001

63

Structural characterization of ultra-thin (0 0 1) silicon films bonded onto (0 0 1) silicon wafers:: a transmission electron microscopy study

K. Rousseau, J.L. Rouvière, F. Fournel, H. Moriceau

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 300 KB

english, 2001

64

Electromigration of Cu and Ti atoms and dopant junction profiles in the p+-Si implanted channel under high-density current

H.H. Lin, S.L. Cheng, L.J. Chen

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 177 KB

english, 2001

65

Ultrashallow profiling of semiconductors by secondary ion mass spectrometry:: methods and applications

E. Napolitani, A. Carnera, V. Privitera, F. Priolo

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 165 KB

english, 2001

66

Minority carrier lifetime and metallic-impurity mapping in silicon wafers

O. Palais, S. Martinuzzi, J.J. Simon

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 123 KB

english, 2001

67

Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon

A. Bazzali, G. Borionetti, R. Falster, D. Gambaro, L. Mule’Stagno, M. Olmo, R. Orizio, M. Porrini

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 187 KB

english, 2001

68

Surface photovoltage measurements for Cu, Ti and W determination in Si wafers

D. Cali, C.M. Camalleri, V. Raineri

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 183 KB

english, 2001

69

Lifetime study in advanced isolation techniques

A. Poyai, E. Simoen, C. Claeys, R. Rooyackers, G. Badenes

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 102 KB

english, 2001

70

Femtosecond nonlinear optical characterisation of silicon wafers: the role of symmetry

J. Reif, Th. Schneider, D. Wolfframm, R.P. Schmid

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 200 KB

english, 2001

71

Multiple internal reflection spectroscopy: a sensitive non-destructive probe for interfaces and nanometric layers

M. Olivier, N. Rochat, A. Chabli, G. Lefeuvre, F. Conne

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 127 KB

english, 2001

72

Optical, non-destructive characterization of ultra-shallow junctions

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 266 KB

english, 2001

73

Simulation of scanning capacitance microscopy measurements on micro-sectioned and bevelled n+–p samples

L. Ciampolini, F. Giannazzo, M. Ciappa, W. Fichtner, V. Raineri

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 128 KB

english, 2001

74

Evaluation of different oxidation methods for silicon for scanning capacitance microscopy

O. Bowallius, S. Anand

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

75

High-resolution scanning capacitance microscopy by angle bevelling

Filippo Giannazzo, Vito Raineri, Vittorio Privitera, Francesco Priolo

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 141 KB

english, 2001

76

Auto-correlation function analysis of amorphous interlayers in Ti/Si systems

L.J. Chen, S.L. Cheng, S.M. Chang, H.Y. Huang

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 178 KB

english, 2001

77

Electrical characterization of semiconductor materials and devices using scanning probe microscopy

P. De Wolf, E. Brazel, A. Erickson

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 326 KB

english, 2001

78

Editorial

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 41 KB

english, 2001

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