Volume 70; Issue 2-4

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Microelectronic Engineering
Volume 70; Issue 2-4

Microelectronic Engineering

Volume 70; Issue 2-4

1

Corrosion inhibition by self-assembled monolayers for enhanced wire bonding on Cu surfaces

Caroline M. Whelan, Michael Kinsella, Laureen Carbonell, Hong Meng Ho, Karen Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 256 KB

english, 2003

2

Correlation of electromigration lifetime distribution to failure mode in dual Damascene Cu/SiLK interconnects

L.M. Gignac, C.-K. Hu, E.G. Liniger

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 667 KB

english, 2003

3

Reduced Cu interface diffusion by CoWP surface coating

C.-K. Hu, L. Gignac, R. Rosenberg, E. Liniger, J. Rubino, C. Sambucetti, A. Stamper, A. Domenicucci, X. Chen

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 439 KB

english, 2003

4

Inverse analysis of material removal data using a multiscale CMP model

Jongwon Seok, Andrew T. Kim, Cyriaque P. Sukam, Anurag Jindal, John A. Tichy, Ronald J. Gutmann, Timothy S. Cole

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 618 KB

english, 2003

5

Thickness scaling issues of Ni silicide

O Chamirian, J.A Kittl, A Lauwers, O Richard, M van Dal, K Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 601 KB

english, 2003

6

Characterisation of JSR’s spin-on hardmask FF-02

A. Das, Q.T. Le, Y. Furukawa, V.H. Nguyen, V. Terzieva, F. de Theije, C.M. Whelan, M. Maenhoudt, H. Struyf, Zs. Tókei, F. Iacopi, M. Stucchi, L. Carbonell, I. Vos, H. Bender, M. Patz, G. Beyer, M. Van

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 248 KB

english, 2003

7

Barrier studies on porous silk semiconductor dielectric

Zs. To&amp, #x030B, kei, F. Iacopi, O. Richard, J. Waeterloos, S. Rozeveld, E. Beach, B. Mebarki, T. Mandrekar, S. Guggilla, K. Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 453 KB

english, 2003

8

Nickel-based contact metallization for SiGe MOSFETs: progress and challenges

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 660 KB

english, 2003

9

Ni- and Co-based silicides for advanced CMOS applications

J.A. Kittl, A. Lauwers, O. Chamirian, M. Van Dal, A. Akheyar, M. De Potter, R. Lindsay, K. Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 357 KB

english, 2003

10

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

Q.T. Zhao, P. Kluth, H. Bay, S. Mantl

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 252 KB

english, 2003

11

Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray micro-diffraction and modeling

I De Wolf, V Senez, R Balboni, A Armigliato, S Frabboni, A Cedola, S Lagomarsino

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 782 KB

english, 2003

12

Pinhole density measurements of barriers deposited on low-k films

D Shamiryan, T Abell, Q.T Le, K Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 163 KB

english, 2003

13

Application of atomic force microscopy to detect edge of mask contaminations that may hinder titanium silicide formation

C. Bresolin, M. Pesaturo, P. Paruzzi, V. Soncini, D. Erbetta, M. Bigi

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 369 KB

english, 2003

14

Influence of low-k dry etch chemistries on the properties of copper and a Ta-based diffusion barrier

D. Ernur, F. Iacopi, L. Carbonell, Herbert Struyf, K. Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 848 KB

english, 2003

15

Pt-based metallization of PMOS devices for a compatible monolithic integration of semiconducting/Yba2Cu3O7−δ superconducting devices on silicon

G. Huot, L. Méchin, D. Bloyet

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 225 KB

english, 2003

16

Towards implementation of a nickel silicide process for CMOS technologies

C. Lavoie, F.M. d’Heurle, C. Detavernier, C. Cabral Jr.

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 652 KB

english, 2003

17

Material modification of the patterned wafer during dry etching and strip determined by XPS

Y. Furukawa, M. Patz, T. Kokubo, J.H.M. Snijders

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 930 KB

english, 2003

18

Developing a conductive oxygen barrier for ferroelectric integration

J.A. Johnson, J.G. Lisoni, D.J. Wouters

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 726 KB

english, 2003

19

Impact of thermal cycling on the evolution of grain, precipitate and dislocation structure in Al, 0.5% Cu, 1% Si thin films

B. Kaouache, P. Gergaud, O. Thomas, O. Bostrom, M. Legros

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 791 KB

english, 2003

20

Impact of LKD5109™ low-k to cap/liner interfaces in single damascene process and performance

F. Iacopi, M. Patz, I. Vos, Zs. To&amp, #x030B, kei, B. Sijmus, Q.T. Le, E. Sleeckx, B. Eyckens, H. Struyf, A. Das, K. Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 977 KB

english, 2003

21

Simulation of local mechanical stresses in lines on substrate

Audrey Loubens, Roland Fortunier, René Fillit, Olivier Thomas

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 279 KB

english, 2003

22

Small-scale plasticity in thin Cu and Al films

Gerhard Dehm, T.John Balk, Hervais Edongué, Eduard Arzt

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 894 KB

english, 2003

23

Reliability studies of MOCVD TiSiN and EnCoRe Ta(N)/Ta

Zs. To&amp, #x030B, kei, D. Kelleher, B. Mebarki, T. Mandrekar, S. Guggilla, K. Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 392 KB

english, 2003

24

Electroless deposition of novel Ag–W thin films

V. Bogush, A. Inberg, N. Croitoru, V. Dubin, Y. Shacham-Diamand

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 440 KB

english, 2003

25

Experimental results on the integration of copper and CVD ultra low k material

Matthias Uhlig, A. Bertz, J.-W. Erben, S.E. Schulz, T. Gessner, D. Zeidler, C. Wenzel, J. Bartha

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 329 KB

english, 2003

26

Single damascene integration of porous Zirkon™ version 1 low-k dielectric films

S. Malhouitre, C. Jehoul, J. Van Aelst, H. Struyf, S. Brongersma, L. Carbonell, I. Vos, G. Beyer, M. Van Hove, D. Gronbeck, M. Gallagher, J. Calvert, K. Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 287 KB

english, 2003

27

Surface treatment of wire bonding metal pads

S. Alberici, D. Coulon, P. Joubin, Y. Mignot, L. Oggioni, P. Petruzza, D. Piumi, L. Zanotti

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 686 KB

english, 2003

28

In situ high temperature synchrotron-radiation diffraction studies of silicidation processes in nanoscale Ni layers

J Rinderknecht, H Prinz, T Kammler, N Schell, E Zschech, K Wetzig, T Gessner

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 569 KB

english, 2003

29

Electrochemical aspects of new materials and technologies in microelectronics

Valery M. Dubin

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 371 KB

english, 2003

30

First stages of silicidation in Ti/Si thin films

B Chenevier, O Chaix-Pluchery, P Gergaud, O Thomas, R Madar, F La Via

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 186 KB

english, 2003

31

Microstructural investigation of electrodeposited CuAg-thin films

S. Strehle, S. Menzel, H. Wendrock, J. Acker, K. Wetzig

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 823 KB

english, 2003

32

Electrical resistivity of thin electroless Ag–W films for metallization

E.E. Glickman, V. Bogush, A. Inberg, Y. Shacham-Diamand, N. Croitoru

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 344 KB

english, 2003

33

Transport properties of Mn-doped Ru2Si3

L Ivanenko, A Filonov, V Shaposhnikov, G Behr, D Souptel, J Schumann, H Vinzelberg, A Plotnikov, V Borisenko

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 204 KB

english, 2003

34

Potential of amorphous Mo–Si–N films for nanoelectronic applications

M. Ylönen, H. Kattelus, A. Savin, P. Kivinen, T. Haatainen, J. Ahopelto

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 123 KB

english, 2003

35

In-situ study of stress evolution during solid state reaction of Pd with Si(001) using synchrotron radiation

M. Megdiche, P. Gergaud, C. Curtil, O. Thomas, B. Chenevier, A. Mazuelas

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 122 KB

english, 2003

36

Influence of SiH4 on the WNx-PECVD process

R Ecke, S.E Schulz, M Hecker, N Mattern, T Gessner

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 539 KB

english, 2003

37

CVD TiN layers as diffusion barrier films on porous SiO2 aerogel

J Bonitz, S.E Schulz, T Gessner

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 351 KB

english, 2003

38

A model of the growth of intermediate phase islands in multilayers

G. Lucenko, A. Gusak

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 399 KB

english, 2003

39

Electrical properties of W/Si interfaces with embedded Ge/Si islands

A. Hattab, F. Meyer, Vy Yam, D. Bouchier, R. Meyer, O. Schneegans, C. Clerc

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 280 KB

english, 2003

40

Formation of C49-TiSi2 in flash memories: a nucleation controlled phenomenon?

D. Mangelinck, P. Gas, T. Badéche, E. Taing, F. Nemouchi, C. Perrin-Pellegrino, M. Vuaroqueaux, S. Niel, P. Fornara, J.M. Mirabel, L. Fares, P.H. Albarede

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 605 KB

english, 2003

41

Preface

Olivier Thomas, Herve Dallaporta, Patrick Gas

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 47 KB

english, 2003

42

Integration of SiOC air gaps in copper interconnects

L.G Gosset, V Arnal, Ph Brun, M Broekaart, C Monget, N Casanova, M Rivoire, J.-C Oberlin, J Torres

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 707 KB

english, 2003

43

The metal/organic monolayer interface in molecular electronic devices

Dominique Vuillaume, Stéphane Lenfant

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 513 KB

english, 2003

44

Electroless deposition of Co(W) thin films

Y Sverdlov, Y Shacham-Diamand

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 574 KB

english, 2003

45

Three-dimensional atom probe investigation of Co/Al thin film reaction

V. Vovk, G. Schmitz, R. Kirchheim

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 404 KB

english, 2003

46

C49 defect influence on the C49–C54 transition

F. La Via, F. Mammoliti, M.G. Grimaldi

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 201 KB

english, 2003

47

Time resolved study on Co/Ni/a-Si phase transition during isothermal annealing at 400 °C

A. Alberti, C. Bongiorno, F. La Via, B. Cafra, C. Spinella

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 550 KB

english, 2003

48

Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?

F. La Via, F. Roccaforte, V. Raineri, M. Mauceri, A. Ruggiero, P. Musumeci, L. Calcagno, A. Castaldini, A. Cavallini

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 339 KB

english, 2003

49

Dual metal SiC Schottky rectifiers with low power dissipation

Fabrizio Roccaforte, Francesco La Via, Salvatore Di Franco, Vito Raineri

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 305 KB

english, 2003

50

Low-k dielectrics: a non-destructive characterization by infrared spectroscopic ellipsometry

P. Boher, C. Defranoux, M. Bucchia, C. Guillotin

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 773 KB

english, 2003

51

Challenges of back end of the line for sub 65 nm generation

M. Fayolle, G. Passemard, O. Louveau, F. Fusalba, J. Cluzel

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 1.59 MB

english, 2003

52

A new damascene architecture for high-performance metal–insulator–metal capacitors integration

A. Farcy, J. Torres, V. Arnal, M. Fayolle, H. Feldis, F. Jourdan, M. Assous, J.L. Di Maria, V. Vidal

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 510 KB

english, 2003

53

Francois d’Heurle – scientist, teacher and mentor

James M.E Harper

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 47 KB

english, 2003

54

Editorial Board

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 11 KB

english, 2003

55

Table of Contents

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 50 KB

english, 2003

56

Characteristics of W and Cu/W gate MOS diodes fabricated by a process utilizing LPCVD of W and Cu lift-off

D.N. Kouvatsos, V. Ioannou-Sougleridis, S. Tsevas, F. Christoforou, D. Davazoglou, C. Boukouras

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 250 KB

english, 2003

57

From diffusion processes to adherence properties in NiTi microactuators

I. Jarrige, P. Holliger, T.P. Nguyen, J. Ip, P. Jonnard

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 290 KB

english, 2003

58

Simulations of diffusion barrier deposition on porous low-k films

Z.S. Yanovitskaya, A.V. Zverev, D. Shamiryan, K. Maex

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 270 KB

english, 2003

59

Investigation of iridium as a gate electrode for deep sub-micron CMOS technology

M.A Pawlak, T Schram, K Maex, A Vantomme

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 246 KB

english, 2003

60

Reactively sputtered tantalum pentoxide thin films for integrated capacitors

T Riekkinen, J Molarius

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 195 KB

english, 2003

61

Integrated approach to electrode and AlN depositions for bulk acoustic wave (BAW) devices

R. Jakkaraju, G. Henn, C. Shearer, M. Harris, N. Rimmer, P. Rich

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 327 KB

english, 2003

62

Thermal conductivity of ultra low-k dielectrics

A Delan, M Rennau, S.E Schulz, T Gessner

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 213 KB

english, 2003

63

Copper post-electroplating anneal: evaluation of in-line vs. furnace anneal on layer properties

P.H Haumesser, T Mourier, S Maı̂trejean, M Cordeau, T Morel, X Avale, O Pollet, J Klocke

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 485 KB

english, 2003

64

Investigations of the interface stability in HfO2–metal electrodes

F. Fillot, B. Chenevier, S. Maı&amp, #x0302, trejean, M. Audier, P. Chaudouët, B. Bochu, J.P. Sénateur, A. Pisch, T. Mourier, H. Monchoix, B. Guillaumot, G. Passemard

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 1000 KB

english, 2003

65

Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects

C Wiemer, G Tallarida, E Bonera, E Ricci, M Fanciulli, G.F Mastracchio, G Pavia, S Marangon

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 513 KB

english, 2003

66

Stress development during evaporation of Cu and Ag on silicon

T Pienkos, A Proszynski, D Chocyk, L Gladyszewski, G Gladyszewski

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 426 KB

english, 2003

67

François d'Heurle; a personal reflection on his work combined with his heavy engagement in the world situation

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 41 KB

english, 2003

68

François d’Heurle: Microelectronics and basic research in materials science

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 49 KB

english, 2003

69

Author Index

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 83 KB

english, 2003