F. Triozon: search on Z-Library

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51

Anomalous Magnetotransport in Chemically Doped Carbon Nanotubes

Latil, Sylvain, Triozon, François, Roche, Stephan

Journal:

Physical Review Letters

Year:

2005

Language:

english

File:

PDF, 1.06 MB

english, 2005

52

[IEEE 2012 15th International Workshop on Computational Electronics (IWCE) - Madison, WI, USA (2012.05.22-2012.05.25)] 2012 15th International Workshop on Computational Electronics - Electron-hole transport asymmetry in boron-doped graphene field effect transistors

Marconcini, P., Cresti, A., Triozon, F., Fiori, G., Biel, B., Niquet, Y.-M., Macucci, M., Roche, S.

Year:

2012

Language:

english

File:

PDF, 183 KB

english, 2012

53

Erratum: “Backscattering in carbon nanotubes: Role of quantum interference effects” [Appl. Phys. Lett. 79, 3690 (2001)]

S. Roche, F. Triozon, A. Rubio

Year:

2002

Language:

english

File:

PDF, 283 KB

english, 2002

54

Conduction mechanisms and magnetotransport in multiwalled carbon nanotubes

Roche, Stephan, Triozon, François, Rubio, Angel, Mayou, Didier

Journal:

Physical Review B

Year:

2001

Language:

english

File:

PDF, 359 KB

english, 2001

55

Contact-dependent effects and tunneling currents in DNA molecules

Maciá, Enrique, Triozon, François, Roche, Stephan

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 60 KB

english, 2005

56

and the reason for its failure at

Foerster, D., Triozon, F.

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 165 KB

english, 1997

57

Conductance and coherence lengths in disordered carbon nanotubes: Role of lattice defects and phonon vibrations

Roche, Stephan, Jiang, Jie, Triozon, François, Saito, Riichiro

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 97 KB

english, 2005

58

Nanometer-scale mechanical properties probed by two-dimensional dynamic force spectroscopy with rigid cantilever

Brun, M., Decossas, S., Triozon, F., Rannou, R., Grévin, B.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 1.09 MB

english, 2005

59

Chemical disorder strength in carbon nanotubes: Magnetic tuning of quantum transport regimes

Avriller, Rémi, Latil, Sylvain, Triozon, François, Blase, X., Roche, Stephan

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 154 KB

english, 2006

60

Backscattering in carbon nanotubes: Role of quantum interference effects

Roche, Stephan, Triozon, François, Rubio, Angel

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 246 KB

english, 2001

61

Gate-Dependent Magnetoresistance Phenomena in Carbon Nanotubes

Fedorov, G., Lassagne, B., Sagnes, M., Raquet, B., Broto, J.-M., Triozon, F., Roche, S., Flahaut, E.

Journal:

Physical Review Letters

Year:

2005

Language:

english

File:

PDF, 220 KB

english, 2005

62

Quantum Dephasing in Carbon Nanotubes due to Electron-Phonon Coupling

Roche, Stephan, Jiang, Jie, Triozon, François, Saito, Riichiro

Journal:

Physical Review Letters

Year:

2005

Language:

english

File:

PDF, 119 KB

english, 2005

63

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Density Gradient calibration for 2D quantum confinement: Tri-Gate SOI transistor application

Pons, N., Triozon, F., Jaud, M.-A., Coquand, R., Martinie, S., Rozeau, O., Niquet, Y.-M., Nguyen, V.-H., Oudrhiri, A. Idrissi-El, Barraud, S.

Year:

2013

Language:

english

File:

PDF, 1.23 MB

english, 2013

64

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Analytical model of drain current in nanowire MOSFETs including quantum confinement, band structure effects and quasi-ballistic transport: device to circuit performances analysis

Dura, J., Martinie, S., Munteanu, D., Triozon, F., Barraud, S., Niquet, Y.M., Autran, J.L.

Year:

2011

Language:

english

File:

PDF, 397 KB

english, 2011

65

[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Monte Carlo study of effective mobility in short channel FDSOI MOSFETs

Guarnay, Sebastien, Triozon, Francois, Martinie, Sebastien, Niquet, Yann-Michel, Bournel, Arnaud

Year:

2014

Language:

english

File:

PDF, 391 KB

english, 2014

66

LOW-DIMENSIONAL QUANTUM TRANSPORT PROPERTIES OF CHEMICALLY-DISORDERED CARBON NANOTUBES: FROM WEAK TO STRONG LOCALIZATION REGIMES

AVRILLER, REMI, ROCHE, STEPHAN, TRIOZON, FRANCOIS, BLASE, XAVIER, LATIL, SYLVAIN

Journal:

Modern Physics Letters B

Year:

2007

Language:

english

File:

PDF, 783 KB

english, 2007

67

Relationship between Induced Spherical Aberration and Depth of Focus after Hyperopic LASIK in Presbyopic Patients

Leray, Benjamin, Cassagne, Myriam, Soler, Vincent, Villegas, Eloy A., Triozon, Claire, Perez, Guillermo M., Letsch, Jonathan, Chapotot, Eric, Artal, Pablo, Malecaze, François

Journal:

Year:

2015

Language:

english

File:

PDF, 1.45 MB

english, 2015

68

[IEEE 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Bologna, Italy (2015.1.26-2015.1.28)] EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - Band structure of III-V thin films: An atomistic study of non-parabolic effects in confinement direction

Mugny, G., Triozon, F., Li, J., Niquet, Y.-M., Hiblot, G., Rideau, D., Delerue, C.

Year:

2015

Language:

english

File:

PDF, 511 KB

english, 2015

69

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

Lavieville, Romain, Triozon, François, Barraud, Sylvain, Corna, Andrea, Jehl, Xavier, Sanquer, Marc, Li, Jing, Abisset, Antoine, Duchemin, Ivan, Niquet, Yann-Michel

Journal:

Year:

2015

Language:

english

File:

PDF, 2.92 MB

english, 2015

70

Competition between magnetic field dependent band structure and coherent backscattering in multiwall carbon nanotubes

Stojetz, B, Roche, S, Miko, C, Triozon, F, Forró, L, Strunk, C

Journal:

New Journal of Physics

Year:

2007

Language:

english

File:

PDF, 617 KB

english, 2007

71

[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Study of the piezoresistive properties of NMOS and PMOS Ω-gate SOI nanowire transistors: Scalability effects and high stress level

Pelloux-Prayer, J., Casse, M., Barraud, S., Nguyen, P., Koyama, M., Niquet, Y.-M., Triozon, F., Duchemin, I., Abisset, A., Idrissi-Eloudrhiri, A., Martinie, S., Rouviere, J.-L., Iwai, H., Reimbold, G.

Year:

2014

Language:

english

File:

PDF, 1.77 MB

english, 2014

72

Electronic structure investigation of Al 0.7 Ga 0.3 As/GaAs nanometric heterostructures by Kelvin force microscopy

Pouch, S., Triozon, F., Chevalier, N., Mélin, T., Niquet, Y.-M., Borowik, Ł.

Journal:

Year:

2016

Language:

english

File:

PDF, 1.32 MB

english, 2016

73

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Full-zone k · p parametrization for III-As materials

Mugny, G., Rideau, D., Triozon, F., Niquet, Y.-M., Kriso, C., Pereira, F.G., Garetto, D., Tavernier, C., Delerue, C.

Year:

2015

Language:

english

File:

PDF, 510 KB

english, 2015

74

[IEEE 2014 Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2014.6.8-2014.6.9)] 2014 Silicon Nanoelectronics Workshop (SNW) - Edge-states at the onset of a silicon trigate nanowire FET

Voisin, B., Nguyen, V.-H., Renard, J., Jehl, X., Barraud, S., Triozon, F., Vinet, M., Duchemin, I., Niquet, Y.-M., de Franceschi, S., Sanquer, M.

Year:

2014

Language:

english

File:

PDF, 1.13 MB

english, 2014

75

[IEEE ESSDERC 2015 - 45th European Solid-State Device Research Conference - Graz, Austria (2015.9.14-2015.9.18)] 2015 45th European Solid State Device Research Conference (ESSDERC) - Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model

Pelloux-Prayer, J., Casse, M., Triozon, F., Barraud, S., Niquet, Y.-M., Rouviere, J.-L., Faynot, O., Reimbold, G.

Year:

2015

Language:

english

File:

PDF, 1.16 MB

english, 2015

76

Electron dynamics in silicon nanowire using a Monte-Carlo method

Sarrazin, E, Barraud, S, Bournel, A, Triozon, F

Journal:

Journal of Physics Conference Series

Year:

2009

Language:

english

File:

PDF, 426 KB

english, 2009

77

[IEEE 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Wien, Vienna, Austria (2016.1.25-2016.1.27)] 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Contact resistances in Trigate devices in a Non-Equilibrium Green's Functions framework

Bourdet, Leo, Li, Jing, Pelloux-Prayer, Johan, Triozon, Francois, Casse, Mikael, Barraud, Sylvain, Martinie, Sebastien, Rideau, Denis, Niquet, Yann-Michel

Year:

2016

Language:

english

File:

PDF, 387 KB

english, 2016

78

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

Tavernier, C., Pereira, F. G., Nier, O., Rideau, D., Monsieur, F., Torrente, G., Haond, M., Jaouen, H., Noblanc, O., Niquet, Y.M., Jaud, M-A., Triozon, F., Casse, M., Lacord, J., Barbe, J.C

Year:

2015

Language:

english

File:

PDF, 452 KB

english, 2015

79

Simulation, modelling and characterisation of quasi-ballistic transport in nanometer sized field effect transistors: from TCAD to atomistic simulation

Roche, Stephan, Poiroux, Thierry, Lecarval, Gilles, Barraud, Sylvain, Triozon, Francois, Persson, Martin, Niquet, Yann Michel

Journal:

International Journal of Nanotechnology

Year:

2010

Language:

english

File:

PDF, 980 KB

english, 2010

80

Simulation of Transport in Nanodevices || The Monte Carlo Method for Wigner and Boltzmann Transport Equations

Triozon, Fran&xEois, Dollfus, Philippe

Year:

2016

Language:

english

File:

PDF, 643 KB

english, 2016

81

Simulation of Transport in Nanodevices || Non&;#x02010;Equilibrium Green&;#x00027;s Function Formalism

Triozon, Fran&xEois, Dollfus, Philippe

Year:

2016

Language:

english

File:

PDF, 7.18 MB

english, 2016

82

Simulation of Transport in Nanodevices || Introduction to Quantum Transport

Triozon, Fran&xEois, Dollfus, Philippe

Year:

2016

Language:

english

File:

PDF, 1.14 MB

english, 2016

83

Simulation of Transport in Nanodevices || Electronic Transport: Electrons, Phonons and Their Coupling within the Density Functional Theory

Triozon, Fran&xEois, Dollfus, Philippe

Year:

2016

Language:

english

File:

PDF, 1.10 MB

english, 2016

84

Simulation of Transport in Nanodevices || Electron Devices Simulation with Bohmian Trajectories

Triozon, Fran&xEois, Dollfus, Philippe

Year:

2016

Language:

english

File:

PDF, 1.25 MB

english, 2016

85

Simulation of Transport in Nanodevices || Electronic Band Structure: Empirical Pseudopotentials, k · p and Tight-Binding Methods

Triozon, Fran&xEois, Dollfus, Philippe

Year:

2016

Language:

english

File:

PDF, 922 KB

english, 2016

86

Simulation of Transport in Nanodevices || Introduction: Nanoelectronics, Quantum Mechanics, and Solid State Physics

Triozon, Fran&xEois, Dollfus, Philippe

Year:

2016

Language:

english

File:

PDF, 1.57 MB

english, 2016

87

Simulation of Transport in Nanodevices || Relevant Semiempirical Potentials for Phonon Properties

Triozon, Fran&xEois, Dollfus, Philippe

Year:

2016

Language:

english

File:

PDF, 1.17 MB

english, 2016

88

Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements

Kriso, C., Triozon, F., Delerue, C., Schneider, L., Abbate, F., Nolot, E., Rideau, D., Niquet, Y.-M., Mugny, G., Tavernier, C.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 548 KB

english, 2017

89

[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - NSP: Physical compact model for stacked-planar and vertical Gate-All-Around MOSFETs

Rozeau, O., Martinie, S., Poiroux, T., Triozon, F., Barraud, S., Lacord, J., Niquet, Y. M., Tabone, C., Coquand, R., Augendre, E., Vinet, M., Faynot, O., Barbe, J.-Ch.

Year:

2016

Language:

english

File:

PDF, 663 KB

english, 2016

90

[IEEE 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Burlingame, CA, USA (2016.10.10-2016.10.13)] 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Transport in TriGate nanowire FET: Cross-section effect at the nanometer scale

Pelloux-Prayer, J., Casse, M., Barraud, S., Triozon, F., Zeng, Z., Niquet, Y.-M., Rouviere, J.-L., Reimbold, G.

Year:

2016

Language:

english

File:

PDF, 298 KB

english, 2016

91

Electronic structure and electron mobility in Si1– xGex nanowires

Mugny, Gabriel, Li, Jing, Triozon, François, Niquet, Yann-Michel, Rideau, Denis, Delerue, Christophe

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 926 KB

english, 2017

92

Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach

Bourdet, Léo, Li, Jing, Pelloux-Prayer, Johan, Triozon, François, Cassé, Mikaël, Barraud, Sylvain, Martinie, Sébastien, Rideau, Denis, Niquet, Yann-Michel

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 2.01 MB

english, 2016

93

Carrier scattering in high- κ /metal gate stacks

Zeng, Zaiping, Triozon, François, Niquet, Yann-Michel

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 8.13 MB

english, 2017

94

A Simple Interpolation Model for the Carrier Mobility in Trigate and Gate-All-Around Silicon NWFETs

Zeng, Zaiping, Triozon, Francois, Barraud, Sylvain, Niquet, Yann-Michel

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.34 MB

english, 2017

95

[IEEE 2017 Symposium on VLSI Technology - Kyoto, Japan (2017.6.5-2017.6.8)] 2017 Symposium on VLSI Technology - Impact of strain on access resistance in planar and nanowire CMOS devices

Berthelon, R., Andneu, F., Triozon, F., Casse, M., Bourdet, L., Ghibaudo, G., Rideau, D., Niquet, Y. M., Barraud, S., Nguyen, P., Le Royer, C., Lacord, J., Tabone, C., Rozeau, O., Dutartre, D., Claver

Year:

2017

Language:

english

File:

PDF, 860 KB

english, 2017

96

[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Performance and design considerations for gate-all-around stacked-NanoWires FETs

Barraud, S., Lapras, V., Previtali, B., Samson, M. P., Lacord, J., Martinie, S., Jaud, M.-A., Athanasiou, S., Triozon, F., Rozeau, O., Hartmann, J. M., Vizioz, C., Comboroure, C., Andrieu, F., Barbe,

Year:

2017

Language:

english

File:

PDF, 921 KB

english, 2017

97

[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Stacked nanowires/nanosheets GAA MOSFET from technology to design enablement

Barbe, J.-Ch., Barraud, S., Rozeau, O., Martinia, S., Lacord, J., Blaise, P., Zeng, Z., Bourdet, L., Triozon, F., Niquet, Y.

Year:

2017

Language:

english

File:

PDF, 745 KB

english, 2017

98

[IEEE 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Burlingame, CA, USA (2017.10.16-2017.10.19)] 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - An improved mobility model for FDSOI TriGate and other multi-gate Nanowire MOSFETs down to nanometer-scaled dimensions

Casse, M., Pelloux-Prayer, J., Zeng, Z., Niquet, Y.-M, Triozon, F., Barraud, S., Reimbold, G.

Year:

2017

Language:

english

File:

PDF, 206 KB

english, 2017

99

Optical vs electronic gap of hafnia by ab initio Bethe-Salpeter equation

Sklénard, Benoît, Dragoni, Alberto, Triozon, François, Olevano, Valerio

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 978 KB

english, 2018

100

Impact of edge roughness on the electron transport properties of MoS 2 ribbons

Park, Jejune, Mouis, Mireille, Triozon, François, Cresti, Alessandro

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 2.78 MB

english, 2018