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1

Design of mm-Wave Slow-Wave-Coupled Coplanar Waveguides

Margalef-Rovira, Marc, Lugo-Alvarez, Jose, Bautista, Alfredo, Vincent, Loic, Lepilliet, Sylvie, Saadi, Abdelhalim A., Podevin, Florence, Barragan, Manuel J., Pistono, Emmanuel, Bourdel, Sylvain, Gaqui

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2020

File:

PDF, 3.14 MB

2020

2

Trap effects studies in GaN MESFETs by pulsed measurements

Trassaert, S., Boudart, B., Gaquière, C., Théron, D., Crosnier, Y., Huet, F., Poisson, M.A.

Journal:

Electronics Letters

Year:

1999

Language:

english

File:

PDF, 1.53 MB

english, 1999

3

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Westlund, Andreas, Sangaré, Paul, Ducournau, Guillaume, Nilsson, Per-Åke, Gaquière, Christophe, Desplanque, Ludovic, Wallart, Xavier, Grahn, Jan

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 885 KB

english, 2013

4

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

S. Saadaoui, M. M. Ben Salem, M. Gassoumi, H. Maaref, C. Gaquière

Year:

2012

Language:

english

File:

PDF, 1.63 MB

english, 2012

5

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Sarazin, N., Jardel, O., Morvan, E., Aubry, R., Laurent, M., Magis, M., Tordjman, M., Alloui, M., Drisse, O., Di Persio, J., di Forte Poisson, M.A., Delage, S.L., Vellas, N., Gaquière, C., Théron, D

Journal:

Electronics Letters

Year:

2007

Language:

english

File:

PDF, 134 KB

english, 2007

6

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

Werquin, M., Gaquiére, C., Guhel, Y., Vellas, N., Theron, D., Boudart, B., Hoel, V., Germain, M., De Jaeger, J.C., Delage, S.

Journal:

Electronics Letters

Year:

2005

Language:

english

File:

PDF, 71 KB

english, 2005

7

AlGaN/GaN HEMT on (111) single crystalline diamond

Alomari, M., Dussaigne, A., Martin, D., Grandjean, N., Gaquière, C., Kohn, E.

Journal:

Electronics Letters

Year:

2010

Language:

english

File:

PDF, 197 KB

english, 2010

8

High-power AlGaN∕GaN HEMTs on resistive silicon substrate

Hoël, V., Vellas, N., Gaquière, C., De Jaeger, J.C., Cordier, Y., Semond, F., Natali, F., Massies, J.

Journal:

Electronics Letters

Year:

2002

Language:

english

File:

PDF, 361 KB

english, 2002

9

Characteristics of Al2O3/AlInN/GaN MOSHEMT

Medjdoub, F., Sarazin, N., Tordjman, M., Magis, M., di Forte-Poisson, M.A., Knez, M., Delos, E., Gaquière, C., Delage, S.L., Kohn, E.

Journal:

Electronics Letters

Year:

2007

Language:

english

File:

PDF, 116 KB

english, 2007

10

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Influence of the Selectively Implanted Collector Integration on +400 GHz f

Lacave, Thomas, Chevalier, Pascal, Campidelli, Yves, Depoyan, Linda, Berthier, Ludovic, André, Frederic, Buczko, Michel, Avenier, Gregory, Gaquière, Christophe, Chantre, Alain

Year:

2010

Language:

english

File:

PDF, 493 KB

english, 2010

11

94 GHz high power performances of InAs0.4P0.6 channel HEMTs on InP

Medjdoub, F., Zaknoune, M., Wallart, X., Gaquière, C., Theron, D.

Journal:

Electronics Letters

Year:

2005

Language:

english

File:

PDF, 87 KB

english, 2005

12

Electrical effects of SiNx deposition on GaN MESFETs

Boudart, B., Gaquière, C., Guhel, Y., de Jaeger, J.C., Poisson, M.A.

Journal:

Electronics Letters

Year:

2001

Language:

english

File:

PDF, 296 KB

english, 2001

13

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Sangaré, Paul, Ducournau, Guillaume, Grimbert, Bertrand, Brandli, Virginie, Faucher, Marc, Gaquière, Christophe, Íñiguez-de-la-Torre, Ana, Íñiguez-de-la-Torre, Ignacio, Millithaler, J. F., Mateo

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.44 MB

english, 2013

14

Evaluation of AlInN∕GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Medjdoub, F., Ducatteau, D., Gaquière, C., Carlin, J.-F., Gonschorek, M., Feltin, E., Py, M.A., Grandjean, N., Kohn, E.

Journal:

Electronics Letters

Year:

2007

Language:

english

File:

PDF, 162 KB

english, 2007

15

High performances of InP channel power HEMT at 94 GHz

Medjdoub, F., Zaknoune, M., Wallart, X., Gaquière, C., Theron, D.

Journal:

Electronics Letters

Year:

2005

Language:

english

File:

PDF, 92 KB

english, 2005

16

Measurement technique for determining impact ionisation in HEMTs

Gaquière, C., Miraumont, P., Crosnier, Y.

Journal:

Electronics Letters

Year:

1999

Language:

english

File:

PDF, 87 KB

english, 1999

17

Proposal and Performance Analysis of Normally Off GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Kuzmik, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquière, C., De Jaeger, J.-C., Čičo, K., Fröhlich, K., Š

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 613 KB

english, 2010

18

Searching for THz Gunn oscillations in GaN planar nanodiodes

Íñiguez-de-la-Torre, A., Íñiguez-de-la-Torre, I., Mateos, J., González, T., Sangaré, P., Faucher, M., Grimbert, B., Brandli, V., Ducournau, G., Gaquière, C.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 2.61 MB

english, 2012

19

Raman characterization of SiN[sub x] deposition on undoped Al[sub 0.48]In[sub 0.52]As and n[sup +] Ga[sub 0.47]In[sub 0.53]As layers for InP high electron mobility transistor applications

Boudart, B., Gaquière, C., Trassaert, S., Constant, M., Lorriaux, A., Lefebvre, N.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 270 KB

english, 1999

20

1W/mm power pseudomorphic HFET with optimised recess technology

Gaquière, C., Théron, D., Bonte, B., Crosnier, Y.

Journal:

Electronics Letters

Year:

1994

File:

PDF, 376 KB

1994

21

[IEEE 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - La Jolla, CA, USA (2012.10.14-2012.10.17)] 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

Chevalier, P., Lacave, T., Canderle, E., Pottrain, A., Carminati, Y., Rosa, J., Pourchon, F., Derrier, N., Avenier, G., Montagné, A., Balteanu, A., Dacquay, E., Sarkas, I., Céli, D., Gloria, D., Gaqui

Year:

2012

Language:

english

File:

PDF, 757 KB

english, 2012

22

Small-signal characteristics of AlInN/GaN HEMTs

Medjdoub, F., Carlin, J.-F., Gonschorek, M., Py, M.A., Grandjean, N., Vandenbrouck, S., Gaquière, C., Dejaeger, J.C., Kohn, E.

Journal:

Electronics Letters

Year:

2006

Language:

english

File:

PDF, 138 KB

english, 2006

23

Static measurements of GaN MESFETs on (111) Si substrates

Hoël, V., Guhel, Y., Boudart, B., Gaquière, C., De Jaeger, J.C., Lahrèche, H., Gibart, P.

Journal:

Electronics Letters

Year:

2001

Language:

english

File:

PDF, 308 KB

english, 2001

24

Current conduction and saturation mechanism in AlGaN∕GaN ungated structures

Kuzmík, J., Bychikhin, S., Pogany, D., Gaquière, C., Morvan, E.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 358 KB

english, 2006

25

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Medjdoub, F., Alomari, M., Carlin, J.-F., Gonschorek, M., Feltin, E., Py, M.A., Gaquière, C., Grandjean, N., Kohn, E.

Journal:

Electronics Letters

Year:

2008

Language:

english

File:

PDF, 227 KB

english, 2008

26

Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs

Gaquière, C., Bollaert, S., Zaknoune, M., Cordier, Y., Theron, D., Crosnier, Y.

Journal:

Electronics Letters

Year:

1999

Language:

english

File:

PDF, 423 KB

english, 1999

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