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51

Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator

Liao, Min, Ishiwara, Hiroshi, Ohmi, Shun-ichiro

Journal:

IEICE Electronics Express

Year:

2011

Language:

english

File:

PDF, 452 KB

english, 2011

52

Effect of Post-Metallization Annealing on Electrical Characteristics of La 2 O 3 Gate Thin Films

Kuriyama, Atsushi, Ohmi, Shun-ichiro, Tsutsui, Kazuo, Iwai, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 474 KB

english, 2005

53

Electrical Properties of Ferroelectric Gate HEMT Structures

Ohmi, Shun-ichiro, Yoshihara, Makoto, Okamoto, Takeo, Tokumitsu, Eisuke, Ishiwara, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 721 KB

english, 1996

54

Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor

Ohmi, Shun-ichiro, Gao, Jun

Journal:

IEICE Electronics Express

Year:

2011

Language:

english

File:

PDF, 490 KB

english, 2011

55

Steep subthreshold swing of pentacene-based organic field-effect transistor with nitrogen-doped LaB 6 interfacial layer

Maeda, Yasutaka, Ohmi, Shun-ichiro

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.99 MB

english, 2017

56

[ECS 211th ECS Meeting - Chicago, Illinois (May 6-May 10, 2007)] ECS Transactions - Mechanism of Selective Etching of SiGe Layers in SiGe/Si Systems

Kato, Juri, Oka, Hideaki, Kanemoto, Kei, Hisamatsu, Hirokazu, Matsuzawa, Yusuke, Kitano, Yoji, Hara, Toshiki, Hoshina, Masaki, Ohmi, Shun-Ichiro

Year:

2007

Language:

english

File:

PDF, 352 KB

english, 2007

57

[IEEE 2018 76th Device Research Conference (DRC) - Santa Barbara, CA, USA (2018.6.24-2018.6.27)] 2018 76th Device Research Conference (DRC) - Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory

Kudoh, Sohya, Ohmi, Shun-Ichiro

Year:

2018

Language:

english

File:

PDF, 4.70 MB

english, 2018

58

[IEEE 2019 International Vacuum Electronics Conference (IVEC) - Busan, Korea (South) (2019.4.28-2019.5.1)] 2019 International Vacuum Electronics Conference (IVEC) - Work Function and Electronic Structure Measurements on Nitrogen-Doped LaB 6 Thin Film by Scanning Tunneling Microscope

Nagaoka, Katsumi, Ohmi, Shun-ichiro

Year:

2019

Language:

english

File:

PDF, 2.51 MB

english, 2019

59

Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy 2 O 3 /Si(100) Diode Characteristics

Ohmi, Shun-ichiro, Yamamoto, Hiroyuki, Taguchi, Junichi, Tsutsui, Kazuo, Iwai, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 361 KB

english, 2004

60

AlON thin films formed by ECR plasma oxidation for high-k gate insulator application

Yamanaka, Go, Uchikawa, Takafumi, Ohmi, Shun-ichiro, Sakai, Tetsushi

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 440 KB

english, 2003

61

S m 2+ Photoluminescence and X-Ray Scattering Studies of A- and B-Type Epitaxial C a F 2 Layers on Si(111)

Sokolov, Nikolai S., Hirai, Takayoshi, Kawasaki, Koji, Ohmi, Shun-ichiro, Tsutsui, Kazuo, Furukawa, Seijirou, Takahashi, Isao, Itoh, Yobun, Harada, Jimpei

Journal:

Japanese Journal of Applied Physics

Year:

1994

File:

PDF, 1.11 MB

1994

62

Ferroelectric properties of undoped HfO 2 directly deposited on Si substrates by RF magnetron sputtering

Kim, Min Gee, Ohmi, Shun-ichiro

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.35 MB

english, 2018

63

Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient

KUDOH, Sohya, OHMI, Shun-ichiro

Journal:

IEICE Transactions on Electronics

Year:

2018

Language:

english

File:

PDF, 931 KB

english, 2018

64

[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - Narrow line crystallization of rubrene thin film enhanced by Yb interfacial layer for single crystal OFET application

Ohmi, Shun-ichiro, Hiroki, Mizuha, Maeda, Yasutaka

Year:

2017

Language:

english

File:

PDF, 293 KB

english, 2017

65

Improvement of Hf-based metal/oxide/nitride/oxide/Si nonvolatile memory characteristics by Si surface atomically flattening

Ohmi, Shun-Ichiro, Horiuchi, Yusuke, Kudoh, Sohya

Journal:

Japanese Journal of Applied Physics

Year:

2020

File:

PDF, 1.10 MB

2020

66

Analysis of variation in leakage currents of Lanthana thin films

Yongshik Kim, Shun-ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 540 KB

english, 2005

67

Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations

Sano, Takahiro, Ohmi, Shun-ichiro

Journal:

IEICE Electronics Express

Year:

2011

Language:

english

File:

PDF, 612 KB

english, 2011

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