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101

The estimation of sputtering yields for SiC and Si

Gernot Ecke, Rastislav Kosiba, Vladimir Kharlamov, Yuri Trushin, Jörg Pezoldt

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2002

Language:

english

File:

PDF, 226 KB

english, 2002

102

Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions

P.V. Rybin, D.V. Kulikov, Yu.V. Trushin, R.A. Yankov, G. Ecke, W. Fukarek, W. Skorupa, J. Pezoldt

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1999

Language:

english

File:

PDF, 184 KB

english, 1999

103

A novel (SiC)1−x(AlN)x compound synthesized using ion beams

J. Pezoldt, R.A. Yankov, A. Mücklich, W. Fukarek, M. Voelskow, H. Reuther, W. Skorupa

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1999

Language:

english

File:

PDF, 302 KB

english, 1999

104

The influence of the implantation sequence on the (SiC)1−x(AlN)x formation

J. Pezoldt, P.V. Rybin, D.V. Kulikov, Yu.V. Trushin, R.A. Yankov, M. Voelskow, U. Kreissig

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2000

Language:

english

File:

PDF, 165 KB

english, 2000

105

RTP — temperature monitoring by means of oxidation

Jens-Peter Zöllner, Volker Cimalla, Jörg Pezoldt

Journal:

Journal of Non-Crystalline Solids

Year:

1995

Language:

english

File:

PDF, 282 KB

english, 1995

106

Growth of three-dimensional SiC clusters on Si modelled by KMC

A.A. Schmidt, V.S. Kharlamov, K.L. Safonov, Yu.V. Trushin, E.E. Zhurkin, V. Cimalla, O. Ambacher, J. Pezoldt

Journal:

Computational Materials Science

Year:

2005

Language:

english

File:

PDF, 247 KB

english, 2005

107

Optimization of 3C–SiC/Si heterointerfaces in epitaxial growth

P. Masri, M. Rouhani Laridjani, T. Wöhner, J. Pezoldt, M. Averous

Journal:

Computational Materials Science

Year:

2000

Language:

english

File:

PDF, 113 KB

english, 2000

108

Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates

As, D. J., Frey, T., Schikora, D., Lischka, K., Cimalla, V., Pezoldt, J., Goldhahn, R., Kaiser, S., Gebhardt, W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 448 KB

english, 2000

109

2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates

Tonisch, Katja, Jatal, Wael, Granzner, Ralf, Kittler, Mario, Baumann, Uwe, Schwierz, Frank, Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 567 KB

english, 2010

110

Properties of Graphene Side Gate Transistors

Hähnlein, Bernd, Händel, Benjamin, Schwierz, Frank, Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 343 KB

english, 2013

111

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla, V, Pezoldt, J, Ambacher, O

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 2.82 MB

english, 2007

112

Side-gate graphene field-effect transistors with high transconductance

Hähnlein, B., Händel, B., Pezoldt, J., Töpfer, H., Granzner, R., Schwierz, F.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 598 KB

english, 2012

113

The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers

Cimalla, Volker, Wöhner, T., Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 337 KB

english, 2000

114

Electrical Characterization of SiC/Si Heterostructures with Modified Interfaces

Förster, Christian, Masri, Pierre M., Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 330 KB

2002

115

Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide

Wang, Ch. Y., Dai, Y., Pezoldt, J., Lu, B., Kups, Th., Cimalla, V., Ambacher, O.

Journal:

Crystal Growth & Design

Year:

2008

Language:

english

File:

PDF, 785 KB

english, 2008

116

AlGaN/GaN Three-Terminal Junction Devices for Rectification and Transistor Applications on 3C-SiC/Si Pseudosubstrates

Hiller, Lars, Pezoldt, Jorg

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 607 KB

english, 2013

117

Isotropic Etching of SiC

Stauden, Thomas, Niebelschütz, Florentina, Tonisch, Katja, Cimalla, Volker, Ecke, Gernot, Haupt, Christian, Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 580 KB

english, 2009

118

AlGaN based MEMS structures

Hähnlein, Bernd, Tonisch, Katja, Ecke, Gernot, Grieseler, Rolf, Michael, Steffen, Schaaf, Peter, Pezoldt, Jörg

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 389 KB

english, 2014

119

Table of Contents

Grieseler, Rolf, Hähnlein, Bernd, Stubenrauch, Mike, Kups, Thomas, Wilke, Marcus, Hopfeld, Marcus, Pezoldt, Jörg, Schaaf, Peter

Journal:

Surgical Clinics

Year:

2006

Language:

english

File:

PDF, 42 KB

english, 2006

120

Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin films

Grieseler, Rolf, Hähnlein, Bernd, Stubenrauch, Mike, Kups, Thomas, Wilke, Marcus, Hopfeld, Marcus, Pezoldt, Jörg, Schaaf, Peter

Journal:

Applied Surface Science

Year:

2014

Language:

english

File:

PDF, 1.87 MB

english, 2014

121

Aluminium implantation of p-SiC for ohmic contacts

Spieβ, L., Nennewitz, O., Weishart, H., Lindner, J., Skorupa, W., Romanus, H., Erler, F., Pezoldt, J.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 1.12 MB

english, 1997

122

Electrical gating and rectification in graphene three-terminal junctions

Händel, B., Hähnlein, B., Göckeritz, R., Schwierz, F., Pezoldt, J.

Journal:

Applied Surface Science

Year:

2014

Language:

english

File:

PDF, 1.11 MB

english, 2014

123

Growth of cubic GaN on 3C–SiC/Si (001) nanostructures

Kemper, R.M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf, T., Maier, H.J., Meertens, D., Tillmann, K., As, D.J., Lindner, J.K.N.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 3.56 MB

english, 2013

124

[IEEE 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) - Sydney, Australia (2008.07.28-2008.08.1)] 2008 Conference on Optoelectronic and Microelectronic Materials and Devices - Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication

Niebelschutz, F., Pezoldt, J., Stauden, T., Cimalla, V., Tonisch, K., Bruckner, K., Hein, M., Ambacher, O., Schober, A.

Year:

2008

Language:

english

File:

PDF, 199 KB

english, 2008

125

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

Alassaad, Kassem, Soulière, Véronique, Cauwet, François, Peyre, Hervé, Carole, Davy, Kwasnicki, Pawel, Juillaguet, Sandrine, Kups, Thomas, Pezoldt, Jörg, Ferro, Gabriel

Journal:

Acta Materialia

Year:

2014

Language:

english

File:

PDF, 1.44 MB

english, 2014

126

[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - Device concepts using two-dimensional electronic materials: Graphene, MoS2, etc

Schwierz, Frank, Pezoldt, Jorg

Year:

2012

Language:

english

File:

PDF, 283 KB

english, 2012

127

Phase selective growth and properties of rhombohedral and cubic indium oxide

Wang, Ch. Y., Cimalla, V., Romanus, H., Kups, Th., Ecke, G., Stauden, Th., Ali, M., Lebedev, V., Pezoldt, J., Ambacher, O.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 612 KB

english, 2006

128

Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)

Kemper, R. M., Mietze, C., Hiller, L., Stauden, T., Pezoldt, J., Meertens, D., Luysberg, M., As, D. J., Lindner, J. K. N.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 3.60 MB

english, 2014

129

Size effect of Young's modulus in AlN thin layers

Hähnlein, Bernd, Schaaf, Peter, Pezoldt, Jörg

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.18 MB

english, 2014

130

α-SiC–β-SiC heteropolytype structures on Si (111)

Morales, F. M., Förster, Ch., Ambacher, O., Pezoldt, J.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 416 KB

english, 2005

131

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs

Fang, Jun, Park, Se-Chul, Schlag, Leslie, Stauden, Thomas, Pezoldt, Jörg, Jacobs, Heiko O.

Journal:

Advanced Functional Materials

Year:

2014

Language:

english

File:

PDF, 1.40 MB

english, 2014

132

Growth of cubic InN on r-plane sapphire

Cimalla, V., Pezoldt, J., Ecke, G., Kosiba, R., Ambacher, O., Spieß, L., Teichert, G., Lu, H., Schaff, W. J.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 404 KB

english, 2003

133

Buried melting in germanium implanted silicon by millisecond flash lamp annealing

M. Voelskow, R. Yankov, W. Skorupa, J. Pezoldt, T. Kups

Year:

2008

Language:

english

File:

PDF, 397 KB

english, 2008

134

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

Himmerlich, M., Knübel, A., Aidam, R., Kirste, L., Eisenhardt, A., Krischok, S., Pezoldt, J., Schley, P., Sakalauskas, E., Goldhahn, R., Félix, R., Mánuel, J. M., Morales, F. M., Carvalho, D., Ben,

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.75 MB

english, 2013

135

Photoreduction and oxidation behavior of In[sub 2]O[sub 3] nanoparticles by metal organic chemical vapor deposition

Wang, Ch. Y., Cimalla, V., Kups, Th., Röhlig, C.-C., Romanus, H., Lebedev, V, Pezoldt, J., Stauden, Th., Ambacher, O.

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 866 KB

english, 2007

136

Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy

Cimalla, V., Stauden, Th., Ecke, G., Scharmann, F., Eichhorn, G., Pezoldt, J., Sloboshanin, S., Schaefer, J. A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 329 KB

english, 1998

137

Vertical design of cubic GaN-based high electron mobility transistors

Granzner, R., Tschumak, E., Kittler, M., Tonisch, K., Jatal, W., Pezoldt, J., As, D., Schwierz, F.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.34 MB

english, 2011

138

Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si(111)

Zgheib, Ch., McNeil, L. E., Kazan, M., Masri, P., Morales, F. M., Ambacher, O., Pezoldt, J.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 261 KB

english, 2005

139

Effect of nanoscale surface morphology on the phase stability of 3C-AlN films on Si(111)

Lebedev, V., Cimalla, V., Kaiser, U., Foerster, Ch., Pezoldt, J., Biskupek, J., Ambacher, O.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 923 KB

english, 2005

140

Ge-modified Si(100) substrates for the growth of 3C-SiC(100)

Zgheib, Ch., McNeil, L. E., Masri, P., Förster, Ch., Morales, F. M., Stauden, Th., Ambacher, O., Pezoldt, J.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 304 KB

english, 2006

141

High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts

Jatal, Wael, Baumann, Uwe, Tonisch, Katja, Schwierz, Frank, Pezoldt, Jorg

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 253 KB

english, 2015

142

SiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices

Hiller, Lars, Tonisch, Katja, Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 670 KB

english, 2013

143

Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing

Andreadou, Aria, Pezoldt, Joerg, Förster, Christian, Polychroniadis, E.K., Voelskow, M., Skorupa, Wolfgang

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 368 KB

english, 2009

144

The Measurement of the Thickness of Thin SiC Layers on Silicon

Cimalla, Volker, Scheiner, J., Ecke, Gernot, Friedrich, M., Goldhahn, R., Zahn, D.R.T., Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 328 KB

1998

145

In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces

Wöhner, T., Stauden, Thomas, Schaefer, J.A., Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 406 KB

english, 2000

146

The Influence of Ge on the SiC Nucleation on (111)Si Surfaces

Pezoldt, Jörg, Wöhner, T., Stauden, Thomas, Schaefer, J.A., Vida, György

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 361 KB

2001

147

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates

Förster, Christian, Cimalla, Volker, Ambacher, Oliver, Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 676 KB

english, 2005

148

Property Modification of 3C-SiC MEMS on Ge-Modified Si(100) Substrates

Niebelschütz, Florentina, Zhao, Wei Hong, Brueckner, Klemens, Tonisch, Katja, Linß, Matthias, Hein, Matthias A., Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 474 KB

english, 2010

149

Infrared Gratings Based on SiC/Si-Heterostructures

Rockstuhl, Carsten, Herzig, H.P., Förster, Christian, Leycuras, André, Ambacher, Oliver, Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 796 KB

english, 2005

150

Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si

Cimalla, Volker, Attenberger, W., Lindner, J.K.N., Stritzker, B., Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 421 KB

english, 2000

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