Volume 82; Issue 3-4

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Microelectronic Engineering
Volume 82; Issue 3-4

Microelectronic Engineering

Volume 82; Issue 3-4

1

Sponsors

Journal:

Microelectronic Engineering

Year:

2005

File:

PDF, 157 KB

2005

2

High quality strained Si/SiGe substrates for CMOS and optical devices

J. Weber, L. Nebrich, F. Bensch, K. Neumeier, G. Vogg, R. Wieland, D. Bonfert, P. Ramm

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 239 KB

english, 2005

3

Impact of patterning and ashing on electrical properties and reliability of interconnects in a porous SiOCH ultra low-k dielectric material

M. Aimadeddine, V. Arnal, A. Farcy, C. Guedj, T. Chevolleau, N. Possémé, T. David, M. Assous, O. Louveau, F. Volpi, J. Torres

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 339 KB

english, 2005

4

Computer simulation of fullerene-based ultra-low k dielectrics

H. Hermann, K. Zagorodniy, A. Touzik, M. Taut, G. Seifert

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 320 KB

english, 2005

5

Scaling down thickness of ULK materials for 65 nm node and below and its effect on electrical performance

S. Frühauf, C. Himcinschi, M. Rennau, K. Schulze, S.E. Schulz, M. Friedrich, T. Gessner, D.R.T. Zahn, Q.T. Le, R. Caluwaerts

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 176 KB

english, 2005

6

Impact of dielectric stack and interface adhesion on mechanical properties of porous ultra low-k

Julien Vitiello, Arno Fuchsmann, Laurent-Luc Chapelon, Vincent Arnal, Daniel Barbier, Joaquin Torres

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 163 KB

english, 2005

7

Copper alloy seed integration for reliability improvement

Wim F.A. Besling, X. Federspiel, T. Vanypre, Joaquin Torres

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 184 KB

english, 2005

8

Deposition and CMP of sub 100 nm silver damascene lines

R. Emling, G. Schindler, G. Steinlesberger, M. Engelhardt, L. Gao, D. Schmitt-Landsiedel

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 258 KB

english, 2005

9

Manufacturing of Pt-electrode by wet etching

M. Zaborowski, P. Grabiec, A. Barcz

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 671 KB

english, 2005

10

Silicides as contact material for DRAM applications

C. Fitz, M. Goldbach, A. Dupont, S. Schmidbauer

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 314 KB

english, 2005

11

Ge effects on silicidation

Paul R. Besser, Paul King, Eric Paton, Stephen Robie

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 334 KB

english, 2005

12

Study of thermal stability of nickel silicide by X-ray reflectivity

M. Van Hove, Y. Travaly, T. Sajavaara, B. Brijs, W. Vandervorst, A. Lauwers, O. Chamirian, J.A. Kittl, A.M. Jonas, K. Maex

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 284 KB

english, 2005

13

Passive on-chip components: Trends and challenges for RF applications

S. Decoutere, G. Carchon, M. Dehan, A. Mercha

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 412 KB

english, 2005

14

3D Integration of CMOS transistors with ICV-SLID technology

Robert Wieland, Detlef Bonfert, Armin Klumpp, Reinhard Merkel, Lars Nebrich, Josef Weber, Peter Ramm

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 282 KB

english, 2005

15

Different SiH4 treatments of CVD TiN barrier layers

J. Bonitz, R. Ecke, S.E. Schulz, T. Gessner

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 342 KB

english, 2005

16

Microstructure effect on EM-induced copper interconnect degradation: Experiment and simulation

E. Zschech, V. Sukharev

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 311 KB

english, 2005

17

Characterization of atomic layer deposited nanoscale structure on dense dielectric substrates by X-ray reflectivity

Y. Travaly, J. Schuhmacher, A. Martin Hoyas, T. Abell, V. Sutcliffe, A.M. Jonas, M. Van Hove, K. Maex

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 143 KB

english, 2005

18

Evaluation of lead-free SnAg solder ball deposition and reflow processes for flip chip applications

Johann Helneder, Charlotte Hoyler, Manfred Schneegans, Holger Torwesten

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 492 KB

english, 2005

19

A numerical method for calculating the dynamic stress in SAW devices

F. Kubat, W. Ruile, U. Rösler, L.M. Reindl

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 202 KB

english, 2005

20

Dual damascene ash development for a VFTL of target k = 2.0 integration

Brian White, Andreas Knorr, Ward Engbrecht, Bernd Kastenmeier, Sanjit Das, Ricky McGowan, Sri Satyanarayana, Michael Gallagher

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 510 KB

english, 2005

21

Novel low-k polycyanurates for integrated circuit (IC) metallization

K. Schulze, U. Schuldt, O. Kahle, S.E. Schulz, M. Uhlig, C. Uhlig, C. Dreyer, M. Bauer, T. Gessner

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 144 KB

english, 2005

22

Potential of air gap technology by selective ozone/TEOS deposition: Effects of air gap geometry on the dielectric constant

A. Stich, Z. Gabric, W. Pamler

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 356 KB

english, 2005

23

Influence of the sidewall diffusion barrier on the transport properties of advanced Cu/low-k interconnects

Cyril Guedj, Jean-Frédéric Guillaumond, Lucile Arnaud, Vincent Arnal, Mohamed Aimadeddine, Gilles Reimbold, Joaquin Torres

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 442 KB

english, 2005

24

Effect of plasma treatments on ultra low-k material properties

A. Humbert, L. Mage, C. Goldberg, K. Junker, L. Proenca, J.B. Lhuillier

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 210 KB

english, 2005

25

Lateral solvent diffusion characterization of low k dielectric plasma damage and ALD barrier film closure

Thomas Abell, Jorg Schuhmacher, Zsolt Tokei, Youssef Travaly, Karen Maex

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 156 KB

english, 2005

26

The restoration of porous methylsilsesquioxane (p-MSQ) films using trimethylhalosilanes dissolved in supercritical carbon dioxide

Bo Xie, Anthony J. Muscat

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 173 KB

english, 2005

27

Deposition of silver, indium, and magnesium onto organic semiconductor layers: Reactivity, indiffusion and metal morphology

Georgeta Salvan, Beynor A. Paez, Simona Silaghi, Dietrich R.T. Zahn

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 357 KB

english, 2005

28

Atomic vapor deposition of Ru and RuO2 thin film layers for electrode applications

C. Manke, S. Miedl, O. Boissiere, P.K. Baumann, J. Lindner, M. Schumacher, A. Brodyanski, M. Scheib

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 251 KB

english, 2005

29

Low resistivity tungsten for contact metallization

Steven Smith, Khaled Aouadi, Josh Collins, Eric van der Vegt, Marie-Thérese Basso, Marc Juhel, Simone Pokrant

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 283 KB

english, 2005

30

Electrical and morphological change of Ag–Ni films by annealing in vacuum

M. Kawamura, M. Yamaguchi, Y. Abe, K. Sasaki

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 271 KB

english, 2005

31

Role of local microchemistry and surface structure in electrical resistivity of 50 nm electroless films Ag–W–oxygen

E. Glickman, A. Inberg, V. Bogush, G. Aviram, R. Popovitz, N. Croitoru, Y. Shacham-Diamand

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 312 KB

english, 2005

32

Investigation of Ni/Co bilayer salicidation process for sub-40 nm gate technology

Eun Ji Jung, Sug-Woo Jung, Hyun-Su Kim, Jong-Ho Yun, Seong Hwee Cheong, Byung Hee Kim, Gil Heyun Choi, Sung Tae Kim, U-In Chung, Joo Tae Moon, Byung Il Ryu

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 287 KB

english, 2005

33

Fabrication and characterization of buried silicide layers on SOI substrates for BICMOS-applications

S. Zimmermann, Q.T. Zhao, B. Trui, M. Wiemer, C. Kaufmann, S. Mantl, V. Dudek, T. Gessner

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 561 KB

english, 2005

34

Thermal stresses in 3D IC inter-wafer interconnects

Jing Zhang, Max O. Bloomfield, Jian-Qiang Lu, Ronald J. Gutmann, Timothy S. Cale

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 668 KB

english, 2005

35

Wide band frequency and in situ characterization of high permittivity insulators (high-k) for high-speed integrated passives

T. Lacrevaz, B. Fléchet, A. Farcy, J. Torres, M. Gros-Jean, C. Bermond, O. Cueto, B. Blampey, G. Angénieux, J. Piquet, F. de Crécy

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 239 KB

english, 2005

36

Optimization of shear test for flip chip solder bump using 3-dimensional computer simulation

Jong-Woong Kim, Seung-Boo Jung

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 338 KB

english, 2005

37

Interfacial reactions and joint reliability of Sn–9Zn solder on Cu or electrolytic Au/Ni/Cu BGA substrate

Chang-Yong Lee, Jeong-Won Yoon, Young-Jig Kim, Seung-Boo Jung

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 647 KB

english, 2005

38

Reliability evaluations of flip chip package under thermal shock test

Dae-Gon Kim, Jong-Woong Kim, Seung-Boo Jung

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 388 KB

english, 2005

39

Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects

S. Chhun, L.G. Gosset, N. Casanova, D. Ney, D. Delille, C. Trouiller, M. Hopstaken, P. Chausse, M. Grégoire, B. Gautier, J.-C. Dupuy, J. Torres

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 298 KB

english, 2005

40

A PVD based barrier technology for the 45 nm node

J. Forster, P. Gopalraja, T.J. Gung, A. Sundarrajan, X. Fu, N. Hammond, J. Fu, U. Kelkar, A. Bhatnagar

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 318 KB

english, 2005

41

TaN/Ta bilayer barrier characteristics and integration for 90 and 65 nm nodes

J.-P. Jacquemin, E. Labonne, C. Yalicheff, E. Royet, P. Vannier, R. Delsol, P. Normandon

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 322 KB

english, 2005

42

Electron back scattered diffraction study of acoustomigration damage in Al/Ti metallization for SAW devices

M. Pekarčı́ková, S. Menzel, H. Wendrock, K. Wetzig

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 377 KB

english, 2005

43

Precursor chemistry for ULK CVD

V. Rouessac, L. Favennec, B. Rémiat, V. Jousseaume, G. Passemard, J. Durand

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 274 KB

english, 2005

44

The current limits of the laser-acoustic test method to characterize low-k films

D. Schneider, S. Frühauf, S.E. Schulz, T. Gessner

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 190 KB

english, 2005

45

Integration of metal insulator metal capacitors (MIM-Caps) with low defectivity into a copper metallization

Michael Schrenk, Klaus Koller, Karl-Heinz Allers, Heinrich Körner

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 416 KB

english, 2005

46

Correlation of electromigration defects in small damascene Cu interconnects with their microstructure

Horst Wendrock, Kabir Mirpuri, Siegfried Menzel, Günther Schindler, Klaus Wetzig

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 231 KB

english, 2005

47

Deposition temperature determination of HDPCVD silicon dioxide films

G. Gulleri, C. Carpanese, C. Cascarano, D. Lodi, R. Ninni, G. Ottaviani

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 386 KB

english, 2005

48

Qualitative and quantitative analysis of acoustomigration effects in SAW-devices

F. Kubat, W. Ruile, C. Eberl, T. Hesjedal, L.M. Reindl

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 222 KB

english, 2005

49

The effect of tungsten and boron on the Cu barrier and oxidation properties of thin electroless cobalt–tungsten–boron films

Hila Einati, Vadim Bogush, Yelena Sverdlov, Yuri Rosenberg, Yosi Shacham-Diamand

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 247 KB

english, 2005

50

Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

F. Fillot, T. Morel, S. Minoret, I. Matko, S. Maîtrejean, B. Guillaumot, B. Chenevier, T. Billon

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 196 KB

english, 2005

51

Ni fully silicided gates for 45 nm CMOS applications

Jorge A. Kittl, Anne Lauwers, Malgorzata A. Pawlak, Mark J.H. van Dal, Anabela Veloso, K.G. Anil, Geoffrey Pourtois, Caroline Demeurisse, Tom Schram, Bert Brijs, Muriel de Potter, Christa Vrancken, Ka

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 640 KB

english, 2005

52

Empirical modeling of oxide CMP at chip scale

H. Wolf, R. Streiter, R. Rzehak, F. Meyer, G. Springer

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 274 KB

english, 2005

53

Molecular structures on crystalline metallic surfaces – From STM images to molecular electronics

M. Hietschold, M. Lackinger, S. Griessl, W.M. Heckl, T.G. Gopakumar, G.W. Flynn

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 533 KB

english, 2005

54

Impact of reducing resist stripping processes at elevated temperature on ULK and HM materials

F. Blaschta, S.E. Schulz, T. Gessner

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 227 KB

english, 2005

55

IFC: Editorial Board

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 31 KB

english, 2005

56

Table of Contents

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 157 KB

english, 2005

57

Author Index

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 183 KB

english, 2005

58

Preface

Thomas Gessner, Stefan E. Schulz, Heinrich Körner

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 168 KB

english, 2005

59

Conference organization

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 118 KB

english, 2005

60

Advanced Cu interconnects using air gaps

L.G. Gosset, A. Farcy, J. de Pontcharra, Ph. Lyan, R. Daamen, G.J.A.M. Verheijden, V. Arnal, F. Gaillard, D. Bouchu, P.H.L. Bancken, T. Vandeweyer, J. Michelon, V. Nguyen Hoang, R.J.O.M. Hoofman, J. T

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 348 KB

english, 2005

61

Mechanical characterization of low-k and barrier dielectric thin films

N. Chérault, G. Carlotti, N. Casanova, P. Gergaud, C. Goldberg, O. Thomas, M. Verdier

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 184 KB

english, 2005

62

High manufacturability Cu multilevel interconnects featuring hybrid-NCS structure

I. Sugiura, N. Misawa, S. Otsuka, N. Nishikawa, Y. Iba, F. Sugimoto, Y. Setta, H. Sakai, Y. Koura, K. Nakano, T. Karasawa, Y. Ohkura, T. Kouno, H. Watatani, Y. Nakata, Y. Mizushima, T. Suzuki, H. Kita

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 573 KB

english, 2005

63

Study of plasma mechanisms of hybrid a-SiOC:H low-k film deposition from decamethylcyclopentasiloxane and cyclohexene oxide

A. Castex, L. Favennec, V. Jousseaume, J. Bruat, J. Deval, B. Remiat, G. Passemard, M. Pons

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 150 KB

english, 2005

64

Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment

Hua-Chiang Wen, Koho Yang, Keng-Liang Ou, Wen-Fa Wu, Ren-Chon Luo, Chang-Pin Chou

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 375 KB

english, 2005

65

Tungsten interconnects in the nano-scale regime

W. Steinhögl, G. Steinlesberger, M. Perrin, G. Scheinbacher, G. Schindler, M. Traving, M. Engelhardt

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 234 KB

english, 2005

66

Self-annealing and aging effect characterization on copper seed thin films

G. Brunoldi, S. Guerrieri, S.G. Alberici, E. Ravizza, G. Tallarida, C. Wiemer, T. Marangon

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 230 KB

english, 2005

67

Investigation of a Ta–Si–O/Ta–Si–N bilayer system for embedded SAW finger structures

D. Reitz, H. Heuer, S. Baunack, R. Hübner, V. Hoffmann, S. Menzel, C. Wenzel, K. Wetzig

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 423 KB

english, 2005

68

Structural and surface properties of NiCr thin films prepared by DC magnetron sputtering under variation of annealing conditions

Yong Kwon, Nam-Hoon Kim, Gwang-Pyo Choi, Woo-Sun Lee, Yong-Jin Seo, Jinseong Park

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 581 KB

english, 2005

69

Influence of Al on the growth of NiSi2 on Si(0 0 1)

F. Allenstein, L. Budzinski, D. Hirsch, A. Mogilatenko, G. Beddies, R. Grötzschel, H.-J. Hinneberg

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 373 KB

english, 2005

70

Improvement in NiSi/Si contact properties with C-implantation

Osamu Nakatsuka, Kazuya Okubo, Akira Sakai, Masaki Ogawa, Yukio Yasuda, Shigeaki Zaima

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 223 KB

english, 2005

71

Thermal stability of Ni(Pt) silicide films formed on poly-Si

I. Doi, R.C. Teixeira, R.E. Santos, J.A. Diniz, J.W. Swart, S.G. Santos Filho

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 429 KB

english, 2005

72

Nickel-silicide process for ultra-thin-body SOI-MOSFETs

M. Schmidt, T. Mollenhauer, H.D.B. Gottlob, T. Wahlbrink, J.K. Efavi, L. Ottaviano, S. Cristoloveanu, M.C. Lemme, H. Kurz

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 278 KB

english, 2005

73

Characterization and optimization of a new Cu/SiN/TaN/Cu damascene architecture for metal–insulator–metal capacitors

M. Thomas, J. Piquet, A. Farcy, C. Bermond, J. Torres, T. Lacrevaz, B. Flechet, N. Casanova, C. Perrot, P. Caubet, B. Chenevier

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 362 KB

english, 2005

74

Effect of substrate metallization on mechanical properties of Sn–3.5Ag BGA solder joints with multiple reflows

Ja-Myeong Koo, Seung-Boo Jung

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 768 KB

english, 2005

75

Model for the barrier diffusion into Cu interconnects at high temperatures

Oliver Aubel, Wolfgang Hasse, Martina Hommel, Heinrich Koerner

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 259 KB

english, 2005

76

Investigation of high performance Ta–Si–N/Cu/Ta–Si–N metallization system for SAW devices

M. Pekarčı́ková, S. Menzel, D. Reitz, H. Schmidt, K. Wetzig

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 360 KB

english, 2005

77

Reliability studies of narrow Cu lines

Günther Schindler, Sabine Penka, Gernot Steinlesberger, Martin Traving, Werner Steinhögl, Manfred Engelhardt

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 255 KB

english, 2005

78

Modeling of residual stresses in thin films deposited by electron beam evaporation

G. Guisbiers, S. Strehle, M. Wautelet

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 117 KB

english, 2005

79

Reservoir effect on electromigration mechanisms in dual-damascene Cu interconnect structures

A.V. Vairagar, S.G. Mhaisalkar, M.A. Meyer, E. Zschech, Ahila Krishnamoorthy

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 224 KB

english, 2005

80

Silver metal organic chemical vapor deposition for advanced silver metallization

L. Gao, P. Härter, Ch. Linsmeier, A. Wiltner, R. Emling, D. Schmitt-Landsiedel

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 245 KB

english, 2005

81

Effects of conditioning temperature on polishing pad for oxide chemical mechanical polishing process

Nam-Hoon Kim, Gwon-Woo Choi, Jin-Seong Park, Yong-Jin Seo, Woo-Sun Lee

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 1.25 MB

english, 2005

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