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51

Thick GaN layers grown by HVPE: Influence of the templates

H. Ashraf, J.L. Weyher, G.W.G. van Dreumel, A. Gzregorzyck, P.R. Hageman

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 696 KB

english, 2008

52

On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes

Tim Bohnen, Aryan E.F. de Jong, Willem J.P. van Enckevort, Jan L. Weyher, Gerbe W.G. van Dreumel, Hina Ashraf, Paul R. Hageman, Elias Vlieg

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 655 KB

english, 2009

53

On the existence of submicron diameter current shunts in morphologically perfect device layers

Z.R. Wasilewski, E. Dupont, J.L. Weyher, S. Laframboise, M. Buchanan, H.C. Liu

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 2.19 MB

english, 2010

54

Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

Tim Bohnen, Hina Ashraf, Gerbe W.G. van Dreumel, Sjoerd Verhagen, Jan L. Weyher, Paul R. Hageman, Elias Vlieg

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 1.73 MB

english, 2010

55

Revealing extended defects in HVPE-grown GaN

J.L. Weyher, B. łucznik, I. Grzegory, J. Smalc-Koziorowska, T. Paskova

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 944 KB

english, 2010

56

Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

H. Ashraf, R. Kudrawiec, J.L. Weyher, J. Serafinczuk, J. Misiewicz, P.R. Hageman

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 630 KB

english, 2010

57

Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 1.46 MB

english, 2006

58

Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition

A.P. Grzegorczyk, J.L. Weyher, P.R. Hageman, P.K. Larsen

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 722 KB

english, 2008

59

Electrochemical etching of highly conductive GaN single crystals

G. Nowak, X.H. Xia, J.J. Kelly, J.L. Weyher, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 399 KB

english, 2001

60

Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates

V. Kirilyuk, A.R.A. Zauner, P.C.M. Christianen, J.L. Weyher, P.R. Hageman, P.K. Larsen

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 110 KB

english, 2001

61

Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

A.R.A. Zauner, E. Aret, W.J.P. van Enckevort, J.L. Weyher, S. Porowski, J.J. Schermer

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 447 KB

english, 2002

62

Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE

M Boćkowski, I Grzegory, S Krukowski, B Łucznik, Z Romanowski, M Wróblewski, J Borysiuk, J Weyher, P Hageman, S Porowski

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 1.27 MB

english, 2002

63

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

P.R Hageman, V Kirilyuk, W.H.M Corbeek, J.L Weyher, B Lucznik, M Bockowski, S Porowski, S Müller

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 913 KB

english, 2003

64

Dislocations and microdefects in LEC-grown silicon-doped gallium arsenide crystals

G. Frigerio, C. Mucchino, J.L. Weyher, L. Zanotti, C. Paorici

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 690 KB

english, 1990

65

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

J.L. Weyher, P.D. Brown, A.R.A. Zauner, S. Müller, C.B. Boothroyd, D.T. Foord, P.R. Hageman, C.J. Humphreys, P.K. Larsen, I. Grzegory, S. Porowski

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 885 KB

english, 1999

66

Recent advances in defect-selective etching of GaN

J.L Weyher, P.D Brown, J.L Rouvière, T Wosinski, A.R.A Zauner, I Grzegory

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 650 KB

english, 2000

67

Analysis of peculiar structural defects created in GaAs by diffusion of copper

C Frigeri, J.L Weyher, S Müller, P Hiesinger

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 290 KB

english, 2000

68

Determination of polarity of GaN cross-section TEM specimens using quantitative electron diffraction

H.W Zandbergen, J Jansen, A.R.A Zauner, J.L Weyher

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 381 KB

english, 2000

69

Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation

A.R.A Zauner, J.L Weyher, M Plomp, V Kirilyuk, I Grzegory, W.J.P van Enckevort, J.J Schermer, P.R Hageman, P.K Larsen

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 769 KB

english, 2000

70

A study of semiconductor surfaces and devices by coupled IR photon tunneling and atomic-force microscopy

P. Gall-Borrut, M. Castagne, J.L. Weyher, J.P. Fillard, J. Bonnafe

Journal:

Ultramicroscopy

Year:

1998

Language:

english

File:

PDF, 219 KB

english, 1998

71

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

J.L. Weyher, M. Albrecht, T. Wosinski, G. Nowak, H.P. Strunk, S. Porowski

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 286 KB

english, 2001

72

Complementary study of defects in GaN by photo-etching and TEM

J.L. Weyher, L. Macht, F.D. Tichelaar, H.W. Zandbergen, P.R. Hageman, P.K. Larsen

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 280 KB

english, 2002

73

Influence of selective GaN islands on optical properties of GaN films grown on sapphire substrate

S Haffouz, P.R Hageman, V Kirilyuk, L Macht, J.L Weyher, P.K Larsen

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 468 KB

english, 2003

74

A study of dislocations in GaAs:Te using electron and optical beams

P. Martín, C. Frigeri, J. Jiménez, J. Weyher

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 559 KB

english, 1996

75

Comparative study of microdefects in dislocation-free, heavily Si doped VB GaAs by DSL etching, NIR phase contrast microscopy, TEM and X-ray diffuse scattering

J.L. Weyher, K. Sonnenberg, T. Schober, A. Rucki, W. Jäger, P. Franzosi, C. Frigeri

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 688 KB

english, 1997

76

Erratum to “A study of dislocations in GaAs:Te using electron and optical beams” [Materials Science and Engineering B42 (1996) 225–229]

P. Martin, C. Frigeri, J. Jiménez, J. Weyher

Journal:

Materials Science and Engineering: B

Year:

1997

File:

PDF, 31 KB

1997

77

Progress in the layer thickness determination of AlGaAs/GaAs heterostructures using selective etching and AFM imaging of the (110) cleavage planes

S. Müller, J.L. Weyher, R. Dian, W. Jantz

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 495 KB

english, 1997

78

Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAs

J.L. Weyher, T. Schober, K. Sonnenberg, P. Franzosi

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 826 KB

english, 1998

79

Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasers

C Frigeri, M Baeumler, A Migliori, S Müller, J.L Weyher, W Jantz

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.28 MB

english, 1999

80

Occupationally-induced “isolated cobalt sensitization”

H. Dickel, M. Radulescu, I. Weyher, T. L. Diepgen

Journal:

Contact Dermatitis

Year:

2001

Language:

english

File:

PDF, 50 KB

english, 2001

81

Impact of anatomical location on barrier recovery, surface pH and stratum corneum hydration after acute barrier disruption

J.W. Fluhr, H. Dickel, O. Kuss, I. Weyher, T.L. Diepgen, E. Berardesca

Journal:

British Journal of Dermatology

Year:

2002

Language:

english

File:

PDF, 307 KB

english, 2002

82

Metal ion binding affinities of gastrin and CCK in membrane mimetic environments

Jürgen Lutz, Elisabeth Weyher, Luis Moroder

Journal:

Journal of Peptide Science

Year:

1995

Language:

english

File:

PDF, 957 KB

english, 1995

83

Cysteine Racemization in Peptide Synthesis: A New and Easy Detection Method

Frank Siedler, Elisabeth Weyher, Luis Moroder

Journal:

Journal of Peptide Science

Year:

1996

Language:

english

File:

PDF, 368 KB

english, 1996

84

Defect-selective etching of SiC

J. L. Weyher, S. Lazar, J. Borysiuk, J. Pernot

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 272 KB

english, 2005

85

Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

M. Rudziński, E. Jezierska, J. L. Weyher, L. Macht, P. R. Hageman, J. Borysiuk, T. C. Rödle, H. F. F. Jos, P. K. Larsen

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 1.66 MB

english, 2007

86

A study of dislocations, precipitates, and deep level EL2 in LEC GaAs grown under Ga-rich conditions

C. Frigeri, J. L. Weyher, H. Ch. Alt

Journal:

physica status solidi (a)

Year:

1993

Language:

english

File:

PDF, 457 KB

english, 1993

87

Characterization of GaN single crystals by defect-selective etching

J. L. Weyher, L. Macht, G. Kamler, J. Borysiuk, I. Grzegory

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 572 KB

english, 2003

88

Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

M. Rudziński, V. Desmaris, P. A. van Hal, J. L. Weyher, P. R. Hageman, K. Dynefors, T. C. Rödle, H. F. F. Jos, H. Zirath, P. K. Larsen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 400 KB

english, 2006

89

Bulk GaN crystals and wafers grown by HVPE without intentional doping

Bolesław Łucznik, Bogdan Pastuszka, Jan L. Weyher, Grzegorz Kamler, Izabella Grzegory, Sylwester Porowski

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 531 KB

english, 2009

90

The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates

Tim Bohnen, Gerbe W. G. van Dreumel, Jan L. Weyher, Willem J. P. van Enckevort, Hina Ashraf, Aryan E. F. de Jong, Paul R. Hageman, Elias Vlieg

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 556 KB

english, 2010

91

Microdefects in sulphur doped GaAs

G. M. Pennock, F. W. Schapink, J. L. Weyher

Journal:

Journal of Materials Science Letters

Year:

1988

Language:

english

File:

PDF, 529 KB

english, 1988

92

Final polishing of Ga-polar GaN substrates using reactive ion etching

F. Karouta, J. L. Weyher, B. Jacobs, G. Nowak, A. Presz, I. Grzegory, L. M. F. Kaufmann

Journal:

Journal of Electronic Materials

Year:

1999

Language:

english

File:

PDF, 252 KB

english, 1999

93

Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutions: II. The nature of etchFF hillocks

J. Weyher, W.J.P. Van Enckevort

Journal:

Journal of Crystal Growth

Year:

1983

Language:

english

File:

PDF, 895 KB

english, 1983

94

Influence of Si and S doping on structural defects in LEC-grown gallium arsenide

Giling, L.J., Weyher, J.L., Montree, A., Fornari, R., Zanotti, L.

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 896 KB

english, 1986

95

High resolution electron microscopy and etching study of twins in GaAs

H.W. Zandbergen, J. Weyher, J. Van Landuyt

Journal:

Journal of Crystal Growth

Year:

1987

Language:

english

File:

PDF, 660 KB

english, 1987

96

Study of decoration microdefects in lec-grown Si-doped GaAs crystals by selective photoetching and laser scattering tomography

J.L. Weyher, P. Gall, G. Frigerio, L. Zanotti

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 456 KB

english, 1990

97

DSL photoetching and near infrared phase contrast microscopy on grown-in defects in Si doped LEC GaAs

J.L. Weyher, P.C. Montgomery

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 507 KB

english, 1990

98

Combined use of EBIC and DSL photoetching for the quantitative assessment of defect properties in LEC GaAs

C. Frigeri, J.L. Weyher

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 768 KB

english, 1990

99

Defect-selective etching of GaN in a modified molten bases system

G Kamler, J.L Weyher, I Grzegory, E Jezierska, T Wosiński

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 541 KB

english, 2002

100

Chemical polishing of bulk and epitaxial GaN

J.L. Weyher, S. Müller, I. Grzegory, S. Porowski

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 573 KB

english, 1997