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51

Patterning of a micromechanical coplanar waveguide using a dry etching technique

Š. Haščı́k, Ž. Mozolová, T. Lalinský, M. Tomáška, I. Kostič

Journal:

Year:

2002

Language:

english

File:

PDF, 399 KB

english, 2002

52

Reactively sputtered NbN Schottky contacts on GaAs and their thermal stability

I Hotový, J Huran, b Š Haščíkb, T Lalinský

Journal:

Year:

1998

Language:

english

File:

PDF, 299 KB

english, 1998

53

GaAs–Anodic Oxide Interface Examination by Deep–Level Transient Current Spectroscopy

I. Thurzo, K. Gmucová, J. Červenák, T. Lalinský

Journal:

physica status solidi (a)

Year:

1983

Language:

english

File:

PDF, 529 KB

english, 1983

54

Optimization of the heat treatment for forming AuGe based contacts to n-GaAs

T. Lalinský, P. Kordos, B. Kovács, I. Mojzes, B. Szentpáli, A. Tichy-Rácz

Journal:

physica status solidi (a)

Year:

1985

Language:

english

File:

PDF, 155 KB

english, 1985

55

Correlation Between the Backgating Effect and the Gate Length Shortening on GaAs MESFETs

J. Kuzmik, T. Lalinsky

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 179 KB

english, 1990

56

Characterization of MAOS Structures on GaAs

J. Bartoš, E. Pinčík, I. Thurzo, B. Matátko, T. Lalinský

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 328 KB

english, 1990

57

GaAs MSM Photodiode Using the Highly Doped Channel Layer of a Heterostructure MESFET

M. Porges, T. Lalinský, J. Šafranková, P. Hudek, J. Kraus, F. J. Tegude, W. von Wendorff, D. Jäger

Journal:

physica status solidi (a)

Year:

1993

Language:

english

File:

PDF, 369 KB

english, 1993

58

Photoelectrical properties of GaAs MSM photodetector compatible with pseudomorphic heterostructure MESFET

J. Šafránková, M. Porges, T. Lalinsky, Z. Mozolová, P. Hudek, I. Kostič, J. Kraus, W. Von Wendorff, F. J. Tegude, D. Jäger

Journal:

physica status solidi (a)

Year:

1993

Language:

english

File:

PDF, 210 KB

english, 1993

59

Polyimide-fixed GaAs Island structure prepared using plasma etching technique

Š. Haščík, T. Lalinský, M. Krnáč, Ž. Mozolová, L. Matay, P. Hrkút, I. Hotový

Journal:

Czechoslovak Journal of Physics

Year:

2004

Language:

english

File:

PDF, 346 KB

english, 2004

60

Mechanical characterization of membrane like microelectronic components

M. Držı́k, H. Löschner, E. Haugeneder, W. Fallman, P. Hudek, I.W. Rangelow, Y. Sarov, T. Lalinský, J. Chlpı́k

Journal:

Microelectronic Engineering

Year:

2006

Language:

english

File:

PDF, 271 KB

english, 2006

61

Patterning of cantilevers for power sensor microsystem

Š Haščík, T Lalinský, Z Mozolová, J Kuzmík

Journal:

Year:

1998

Language:

english

File:

PDF, 832 KB

english, 1998

62

Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, D. W. E. Allsopp

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 294 KB

english, 2012

63

Laser ablated ZnO layers for ALGaN/GaN HEMT passivation

G. Vanko, M. Vallo, J. Bruncko, T. Lalinský

Journal:

Year:

2012

Language:

english

File:

PDF, 457 KB

english, 2012

64

AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation

Lalinsky, T., Vanko, G., Vallo, M., Dobrocka, E., Ryger, I., Vincze, A.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 737 KB

english, 2012

65

AlGaN/GaN Based SAW-HEMT Devices for Chemical Gas Sensors Operating in GHz Range

Ivan Rýger, Gabriel Vanko, Tibor Lalinský, Martin Vallo, Martin Tomáška, Adrian Ritomský

Journal:

Procedia Engineering

Year:

2011

Language:

english

File:

PDF, 548 KB

english, 2011

66

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Preparation and Characterization of Microhotplate for Gas Sensors

Rehakova, A., Tengeri, D., Hotovy, I., Lalinsky, T., Rehacek, V., Spiess, L., Romanus, H., Hascik, S.

Year:

2006

Language:

english

File:

PDF, 3.47 MB

english, 2006

67

Monolithic GaAs MESFET power sensor microsystem

Haščík, Š., Mozolová, Ž., Grno, L., Lalinský, T., Kuzmík, J., Porges, M.

Journal:

Electronics Letters

Year:

1995

Language:

english

File:

PDF, 258 KB

english, 1995

68

Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT

Vallo, Martin, Lalinský, Tibor, Dobročka, Edmund, Vanko, Gabriel, Vincze, Andrej, Rýger, Ivan

Journal:

Applied Surface Science

Year:

2013

Language:

english

File:

PDF, 599 KB

english, 2013

69

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al 2 O 3 gate oxide

Gregušová, D, Stoklas, R, Čičo, K, Lalinský, T, Kordoš, P

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 455 KB

english, 2007

70

Bulk micromachining of SiC substrate for MEMS sensor applications

Vanko, Gabriel, Hudek, Peter, Zehetner, Johann, Dzuba, Jaroslav, Choleva, Pavlina, Kutiš, Vladimír, Vallo, Martin, Rýger, Ivan, Lalinský, Tibor

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 765 KB

english, 2013

71

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J.

Journal:

Applied Surface Science

Year:

2013

Language:

english

File:

PDF, 1.75 MB

english, 2013

72

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Gates of AlGaN/GaN HEMT for high temperature gas sensing applications

Ryger, I., Vanko, G., Kunzo, P., Lalinsky, T., Dzuba, J., Vallo, M., Satrapinsky, L., Plecenik, T., Chvala, A.

Year:

2012

Language:

english

File:

PDF, 329 KB

english, 2012

73

MEMS Piezoelectric Pressure Sensor-modelling and Simulation

Kutiš, Vladimír, Dzuba, Jaroslav, Paulech, Juraj, Murín, Justín, Lalinský, Tibor

Journal:

Procedia Engineering

Year:

2012

Language:

english

File:

PDF, 453 KB

english, 2012

74

AlGaN/GaN HEMT Based Hydrogen Sensors With Gate Absorption Layers Formed by High Temperature Oxidation

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Vallo, M., Plecenik, A., Satrapinský, L., Plecenik, T.

Journal:

Procedia Engineering

Year:

2012

Language:

english

File:

PDF, 813 KB

english, 2012

75

Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device

Lalinský, T., Hudek, P., Vanko, G., Dzuba, J., Kutiš, V., Srnánek, R., Choleva, P., Vallo, M., Držík, M., Matay, L., Kostič, I.

Journal:

Microelectronic Engineering

Year:

2012

Language:

english

File:

PDF, 383 KB

english, 2012

76

Modelling and Simulation of SAW Sensor Using FEM

Kutiš, Vladimír, Gálik, Gabriel, Královič, Viktor, Rýger, Ivan, Mojto, Emil, Lalinský, Tibor

Journal:

Procedia Engineering

Year:

2012

Language:

english

File:

PDF, 479 KB

english, 2012

77

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Thermal stability of IrO2 gate based AlGaN/GaN HEMT

Vallo, M., Lalinsky, T., Vanko, G., Ryger, I., Dzuba, J., Drzik, M.

Year:

2012

Language:

english

File:

PDF, 170 KB

english, 2012

78

[IEEE 2005 International Symposium on Electronics Materials and Packaging - Tokyo, Japan (11-14 Dec. 2005)] 2005 International Symposium on Electronics Materials and Packaging - SAW chemical sensors based on AlGaN/GaN piezoelectric material system: acoustic design and packaging considerations

Rufer, L., Torres, A., Mir, S., Alam, M.O., Lalinsky, T., Chan, Y.C.

Year:

2005

Language:

english

File:

PDF, 3.04 MB

english, 2005

79

Pt/NiO ring gate based Schottky diode hydrogen sensors with enhanced sensitivity and thermal stability

Rýger, Ivan, Vanko, Gabriel, Lalinský, Tibor, Kunzo, Pavol, Vallo, Martin, Vávra, Ivo, Plecenik, Tomáš

Journal:

Sensors and Actuators B: Chemical

Year:

2014

Language:

english

File:

PDF, 1.98 MB

english, 2014

80

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Nb-Ti/Al/Ni/Au Ohmic Metallic System to AlGaN/GaN

Lalinsky, T., Vanko, G., Mozolova, Z., Liday, J., Vogrincic, P., Vincze, A., Uherek, F., Hascik, S., Kostic, I.

Year:

2006

Language:

english

File:

PDF, 3.57 MB

english, 2006

81

[IEEE 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 - Vienna, Austria (15-16 Nov. 2001)] 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567) - Micromechanical coplanar waveguide compatible with pseudomorphic AlGaAs/InGaAs/GaAs based HFETs

Tomaska, M., Lalinsky, T., Krnac, M., Klasovity, M., Mozolovad, Z., Hascik, S., Kostic, I.

Year:

2001

Language:

english

File:

PDF, 402 KB

english, 2001

82

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Microelectromagnetic matrix for local assembling of magnetic nanoparticles

Luby, S., Chitu, L., Majkova, E., Senderak, R., Kostic, I., Hrkut, P., Matay, L., Hascik, S., Lalinsky, T., Capek, I., Satka, A.

Year:

2006

Language:

english

File:

PDF, 3.76 MB

english, 2006

83

Base-catalyzed deuterium exchange in pyridine N-oxides

Immaculata Gallagher, Sister Ann., Lalinsky, Barbara A., Cuper, Christine M.

Journal:

Journal of Organic Chemistry

Year:

1970

Language:

english

File:

PDF, 291 KB

english, 1970

84

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - HEMT-SAW structures for chemical gas sensors in harsh environment

Ryger, I., Lalinsky, T., Vanko, G., Tomaska, M., Kostic, I., Hascik, S., Vallo, M.

Year:

2010

Language:

english

File:

PDF, 218 KB

english, 2010

85

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures

Cico, K., Kuzmik, J., Gregusova, D., Lalinsky, T., Georgakilas, A., Pogany, D., Frohlich, K.

Year:

2006

Language:

english

File:

PDF, 3.45 MB

english, 2006

86

[IEEE ASDAM'02 (4th International Conference on Advanced Semiconductor Devices and Microsystems) - Smolenice Castle, Slovakia (14-16 Oct. 2002)] The Fourth International Conference on Advanced Semiconductor Devices and Microsystem - The effect of polyimide fixation on thermal performance of GaAs cantilever based MEMS: a 3D numerical analysis with DEETEN

Burian, E., Lalinsky, T.

Year:

2002

Language:

english

File:

PDF, 235 KB

english, 2002

87

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Conductive metal oxide based gates for self-aligned technology of AlGaN/GaN HEMTs

Vanko, G., Vallo, M., Ryger, I., Dzuba, J., Lalinsky, T.

Year:

2012

Language:

english

File:

PDF, 187 KB

english, 2012

88

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices

Florovic, M., Kovac, J., Kordos, P., Skriniarova, J., Lalinsky, T., Hascik, S., Michalka, M., Donoval, D., Uherek, F.

Year:

2008

Language:

english

File:

PDF, 1.40 MB

english, 2008

89

[IEEE ASDAM '98. Conference Proceedings. Second International Conference on Advances Semiconductor Devices and Microsystems - Smolenice Castle, Slovakia (5-7 Oct. 1998)] ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) - T-shaped gate based on poly Si/polyimide supported layers

Lalinsky, T., Hrkut, P., Matay, L., Kostic, I., Hascik, S., Hudek, P.

Year:

1998

Language:

english

File:

PDF, 442 KB

english, 1998

90

[IEEE ASDAM '98. Conference Proceedings. Second International Conference on Advances Semiconductor Devices and Microsystems - Smolenice Castle, Slovakia (5-7 Oct. 1998)] ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) - Thin film resistance temperature sensors on GaAs

Lalinsky, T., Hotovy, I., Hascik, S., Mozolova, Z., Kuzmik, J., Pogany, D.

Year:

1998

Language:

english

File:

PDF, 319 KB

english, 1998

91

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - InAIN/GaN MOSHEMT with Al2O3 insulating film

Cico, K., Gregusova, D., Kuzmik, J., di Forte-Poisson, M. A., Lalinsky, T., Pogany, D., Delage, S. L., Frohlich, K.

Year:

2008

Language:

english

File:

PDF, 747 KB

english, 2008

92

[IEEE ASDAM '98. Conference Proceedings. Second International Conference on Advances Semiconductor Devices and Microsystems - Smolenice Castle, Slovakia (5-7 Oct. 1998)] ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) - Study of bimetallic effect in a GaAs cantilever beam of power sensor microsystem

Lalinsky, T., Drzik, M., Hascik, S., Mozolova, I., Kuzmik, J., Hatzopoulos, Z.

Year:

1998

Language:

english

File:

PDF, 313 KB

english, 1998

93

[IEEE 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 - Vienna, Austria (15-16 Nov. 2001)] 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567) - Characterization of delta-doped GaAs grown by molecular beam epitaxy

Gurnik, P., Srnanek, R., McPhail, D.S., Chater, R.J., Fearn, S., Harmatha, L., Kordos, P., Geurts, J., Lalinsky, T.

Year:

2001

Language:

english

File:

PDF, 476 KB

english, 2001

94

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - GaAs and GaN based SAW chemical sensors: acoustic part design and technology

Rufer, L., Lalinsky, T., Grobelny, D., Mir, S., Vanko, G., Oszi, Zs., Mozolova, Z., Gregus, J.

Year:

2006

Language:

english

File:

PDF, 3.73 MB

english, 2006

95

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Poly Si/Ni(Pt) thin film resistance temperature sensors on GaAs

Lalinsky, T., Hrkut, P., Mozolova, Z., Kovacik, T.

Year:

2000

Language:

english

File:

PDF, 220 KB

english, 2000

96

Analysis of the temperature evolution from the time resolved thermo-optical interferometric measurements with few Fabry–Pérot peaks

Pogany, D., Seliger, N., Gornik, E., Stoisiek, M., Lalinský, T.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 380 KB

english, 1998

97

[Telecommun. Res. Inst 14th International Conference on Microwaves, Radar and Wireless Communications. MIKON-2002 - Gdansk, Poland (20-22 May 2002)] 14th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2002. Conference Proceedings (IEEE Cat.No.02EX562) - Micromachined coplanar waveguide on GaAs based HFET heterostructures

Tomaska, M., Lalinsky, T., Krnac, M., Klasovity, M., Mozolova, Z., Hascik, S., Kostic, I.

Year:

2002

Language:

english

File:

PDF, 320 KB

english, 2002

98

High-temperature stable Ir-Al/n-GaAs Schottky diodes

Lalinský, T., Gregušová, D., Mozolová, Ž., Breza, J., Vogrinčič, P.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 568 KB

english, 1994

99

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Laser ablation: A supporting technique to micromachining of SiC

Vanko, G., Zehetner, J., Choleva, P., Lalinsky, T., Hudek, P.

Year:

2012

Language:

english

File:

PDF, 768 KB

english, 2012

100

[IEEE ASDAM '98. Conference Proceedings. Second International Conference on Advances Semiconductor Devices and Microsystems - Smolenice Castle, Slovakia (5-7 Oct. 1998)] ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) - Radiation effects in surface-barrier Ir-Al/n-GaAs structures

Belyaev, A.A., Konakova, R.V., Milenin, V.V., Breza, J., Lalinsky, T.

Year:

1998

Language:

english

File:

PDF, 267 KB

english, 1998

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