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51

Vapor phase epitaxy of CuAlS2 on CuGaS2 substrates by the iodine transport method

Hideto Miyake, Michitaka Yamada, Koichi Sugiyama

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 476 KB

english, 1995

52

Effects of Si doping in high-quality AlN grown by MOVPE on trench-patterned template

Nishio, Gou, Yang, Shibo, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 737 KB

english, 2013

53

Antireflection Effect of Self-Organized GaN Nanotip Structure from Ultraviolet to Visible Region

Yoshida, Harumasa, Terada, Yuusuke, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 108 KB

english, 2002

54

Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer

Kida, Yoshihiro, Shibata, Tomohiko, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 119 KB

english, 2003

55

X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)

Iyechika, Yasushi, Shimizu, Masaya, Maeda, Takayoshi, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 80 KB

english, 2003

56

Variation of Surface Potentials of Si-Doped Al x Ga 1- x N (0 < x < 0.87) Grown on AlN/Sapphire Template by Metal–Organic Vapor Phase Epitaxy

Kubo, Toshiharu, Taketomi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Hashizume, Tamotsu

Journal:

Applied Physics Express

Year:

2010

Language:

english

File:

PDF, 440 KB

english, 2010

57

Growth of CuGaS 2 Single Crystals by Traveling Heater Method

Miyake, Hideto, Sugiyama, Koichi

Journal:

Japanese Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 220 KB

english, 1990

58

Characterization of high-quality epitaxial AlN films grown by MOVPE

Shibata, Tomohiko, Asai, Keiichiro, Nagai, Teruyo, Sumiya, Shigeaki, Tanaka, Mitsuhiro, Oda, Osamu, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 1.24 MB

english, 2001

59

Excitation and deexcitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states

Ishitani, Yoshihiro, Takeuchi, Kazuma, Oizumi, Naoyuki, Sakamoto, Hironori, Ma, Bei, Morita, Ken, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Journal of Physics D Applied Physics

Year:

2016

Language:

english

File:

PDF, 2.44 MB

english, 2016

60

Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates

Okada, Shunsuke, Iwai, Hiroki, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 1.27 MB

english, 2016

61

Solution Growth of CuGa x In 1-x Se 2 from CuSe Solutions

Miyake, Hideto, Ohtake, Hiroyuki, Sugiyama, Koichi, Hiramatsu, Kazumasa

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 286 KB

english, 2000

62

[IEEE 2017 22nd Microoptics Conference (MOC) - Tokyo (2017.11.19-2017.11.22)] 2017 22nd Microoptics Conference (MOC) - Fabrication and characterization of a binary diffractive lens for controlling the focal length and depth of focus

Motogaito, Atsushi, Iguchi, Yousuke, Kato, Shuji, Miyake, Hideto, Hiramatsu, Kazumasa

Year:

2017

Language:

english

File:

PDF, 426 KB

english, 2017

63

Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

Omori, Tomoya, Ishizuka, Sayaka, Tanaka, Shunya, Yasue, Shinji, Sato, Kosuke, Ogino, Yuya, Teramura, Shohei, Yamada, Kazuki, Iwayama, Sho, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama,

Journal:

Applied Physics Express

Year:

2020

File:

PDF, 1.04 MB

2020

64

THM Growth of Bulk CuInTe 2 Single Crystals from In Solution

Miyake, Hideto, Hibi, Masanori, Sugiyama, Koichi, Hiramatsu, Kazumasa

Journal:

Japanese Journal of Applied Physics

Year:

2000

File:

PDF, 364 KB

2000

65

Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

Miyake, Hideto, Yamaguchi, Motoo, Haino, Masahiro, Motogaito, Atsushi, Hiramatsu, Kazumasa, Nambu, Shingo, Kawaguchi, Yasutoshi, Sawaki, Nobuhiko, Iyechika, Yasushi, Maeda, Takayoshi, Akasaki, Isamu

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 175 KB

2000

66

Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE

Bei Ma, Reina Miyagawa, Weiguo Hu, Da-Bing Li, Hideto Miyake, Kazumasa Hiramatsu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 2.04 MB

english, 2009

67

THM growth and characterization of CuGaxIn1−xSe2 solid solutions

Hideto Miyake, Tetsuo Haginoya, Koichi Sugiyama

Journal:

Solar Energy Materials and Solar Cells

Year:

1998

Language:

english

File:

PDF, 234 KB

english, 1998

68

Stress analysis of a-plane GaN grown on r-plane sapphire substrates

Bei Ma, Miyake Hideto, Kazumasa Hiramatsu, Hiroshi Harima

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 341 KB

english, 2011

69

Selective growth of carbon nanotubes on silicon protrusions

Sato, Hideki, Hata, Koichi, Miyake, Hideto, Hiramatsu, Kazumasa, Saito, Yahachi

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2005

Language:

english

File:

PDF, 602 KB

english, 2005

70

Time-resolved nonlinear luminescence of excitonic transitions in GaN

Yamada, Yoichi, Yoshida, Yohei, Taguchi, Tsunemasa, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayoshi

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 323 KB

english, 2004

71

Correlation between in-plane strain and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration

Kurai, Satoshi, Shimomura, Kazuhide, Murotani, Hideaki, Yamada, Yoichi, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 945 KB

english, 2012

72

Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy

Sone, Hiroki, Nambu, Shingo, Kawaguchi, Yasutoshi, Yamaguchi, Masahito, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayoshi, Sawaki, Nobuhiko

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 963 KB

english, 1999

73

Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy

Haino, Masahiro, Yamaguchi, Motoo, Miyake, Hideto, Motogaito, Atsushi, Hiramatsu, Kazumasa, Kawaguchi, Yasutoshi, Sawaki, Nobuhiko, Iyechika, Yasushi, Maeda, Takayoshi

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 529 KB

english, 2000

74

Selective Area Growth of Semipolar (202̄1) and (202̄1̄) GaN Substrates by Metalorganic Vapor Phase Epitaxy

Jinno, Daiki, Ma, Bei, Miyake, Hideto, Hiramatsu, Kazumasa, Enatsu, Yuuki, Nagao, Satoru

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 711 KB

english, 2013

75

Growth of High Quality c-plane AlN on a-plane Sapphire

Miyagawa, Reina, Wu, Jiejun, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 1.30 MB

english, 2009

76

High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy

Kitagawa, Shin, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 4.13 MB

english, 2014

77

cDNA Cloning and Functional Analysis of Minipig Uridine Diphosphate-Glucuronosyltransferase 1A1

Miyake, Yuuka, Mayumi, Kei, Jinno, Hideto, Tanaka-Kagawa, Toshiko, Narimatsu, Shizuo, Hanioka, Nobumitsu

Journal:

Biological & Pharmaceutical Bulletin

Year:

2013

Language:

english

File:

PDF, 1.35 MB

english, 2013

78

High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes

Huang, Chia-Yen, Wu, Pei-Yu, Chang, Kai-Shiang, Lin, Yun-Hsiang, Peng, Wei-Chih, Chang, Yem-Yeu, Li, Jui-Ping, Yen, Hung-Wei, Wu, YewChung Sermon, Miyake, Hideto, Kuo, Hao-Chung

Journal:

Year:

2017

Language:

english

File:

PDF, 8.20 MB

english, 2017

79

Growth Characteristics of Graphene Film by Chemical Vapor Deposition Method Using Nozzle Gas Injection

Matsuura, Yusuke, Sato, Hideki, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

e-Journal of Surface Science and Nanotechnology

Year:

2015

Language:

english

File:

PDF, 999 KB

english, 2015

80

Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers

Tanaka, Shunya, Kawase, Yuta, Teramura, Shohei, Iwayama, Sho, Sato, Kosuke, Yasue, Shinji, Omori, Tomoya, IWAYA, Motoaki, Takeuchi, Tetsuya, KAMIYAMA, Satoshi, Akasaki, Isamu, MIYAKE, Hideto

Journal:

Applied Physics Express

Year:

2020

File:

PDF, 461 KB

2020

81

Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

Uedono, Akira, Shojiki, Kanako, Uesugi, Kenjiro, Chichibu, Shigefusa F., Ishibashi, Shoji, Dickmann, Marcel, Egger, Werner, Hugenschmidt, Christoph, Miyake, Hideto

Journal:

Journal of Applied Physics

Year:

2020

File:

PDF, 3.34 MB

2020

82

Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

Dabing Li, Bei Ma, Reina Miyagawa, Weiguo Hu, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 283 KB

english, 2009

83

Photoreflectance of CuInS2 single crystal prepared by traveling heater method

Sho Shirakata, Hideto Miyake

Journal:

Journal of Physics and Chemistry of Solids

Year:

2003

Language:

english

File:

PDF, 115 KB

english, 2003

84

Optical characterization of CuInSe2 single crystals prepared by travelling heater method

Sho Shirakata, Hideto Miyake

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 267 KB

english, 2006

85

Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets

Bohyama, Shinya, Miyake, Hideto, Hiramatsu, Kazumasa, Tsuchida, Yoshihiko, Maeda, Takayoshi

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 244 KB

english, 2005

86

[IEEE 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) - Tampa, FL, USA (2013.06.16-2013.06.21)] 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) - Electrical properties of Cu2ZnSnS4 single crystal

Nagaoka, Akira, Yoshino, Kenji, Miyake, Hideto, Taniyama, Tomoyasu, Kakimoto, Koichi

Year:

2013

Language:

english

File:

PDF, 323 KB

english, 2013

87

Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates

Fang, Hao, Takaya, Yoshifumi, Miyake, Hideto, Hiramatsu, Kazumasa, Oku, Hidehiko, Asamura, Hidetoshi, Kawamura, Keisuke

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

88

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

Shimahara, Yuki, Miyake, Hideto, Hiramatsu, Kazumasa, Fukuyo, Fumitsugu, Okada, Tomoyuki, Takaoka, Hidetsugu, Yoshida, Harumasa

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 741 KB

english, 2011

89

Deep Electronic Levels of Al x Ga 1- x N with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

Ooyama, Kimihito, Sugawara, Katsuya, Okuzaki, Shinya, Taketomi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Hashizume, Tamotsu

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 370 KB

english, 2010

90

Temperature Dependence of Linear Thermal Expansion of CuGaSe2 Crystals

Nagaoka, Akira, Yoshino, Kenji, Taniyama, Tomoyasu, Miyake, Hideto

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 666 KB

english, 2012

91

High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate

Shirato, Tatsuya, Hayashi, Yusuke, Uesugi, Kenjiro, Shojiki, Kanako, Miyake, Hideto

Journal:

physica status solidi (b)

Year:

2019

Language:

english

File:

PDF, 2.42 MB

english, 2019

92

HighâQuality AlN Template Prepared by FaceâtoâFace Annealing of Sputtered AlN on Sapphire

Shojiki, Kanako, Uesugi, Kenjiro, Kuboya, Shigeyuki, Inamori, Takafumi, Kawabata, Shin, Miyake, Hideto

Journal:

physica status solidi (b)

Year:

2020

File:

PDF, 1.21 MB

2020

93

Seeded growth of CuGaSe2 single crystals using the travelling heater method

Hideto Miyake, Masatoshi Tajima, Koichi Sugiyama

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 241 KB

english, 1992

94

Solution growth of CuInSe2 from CuSe solutions

Hideto Miyake, Hiroyuki Ohtake, Koichi Sugiyama

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 511 KB

english, 1995

95

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, Katsuya Nishiyama, Masaru Onishi, Hiromitsu Mizutani, Mitsuhisa Narukawa, Atsushi Motogaito, Hideto Miyake, Yasushi Iyechika, Takayoshi Maeda

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 714 KB

english, 2000

96

Evidence for moving of threading dislocations during the VPE growth in GaN thin layers

Noriyuki Kuwano, Hideto Miyake, Kazumasa Hiramatsu, Hiroshi Amano, Isamu Akasaki

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 526 KB

english, 2011

97

Kinetics and mechanism of extraction of iron(III) with trioctylphosphine oxide

Matsuyama, Hideto, Nakamura, Keiji, Miyake, Yoshikazu, Teramoto, Masaaki

Journal:

Industrial & Engineering Chemistry Research

Year:

1992

Language:

english

File:

PDF, 941 KB

english, 1992

98

Sharp band edge photoluminescence of high-purity CuInS[sub 2] single crystals

Yoshino, Kenji, Ikari, Tetsuo, Shirakata, Sho, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 291 KB

english, 2001

99

Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media

Motogaito, Atsushi, Nakamura, Shohei, Miyazaki, Jyun, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Optics Communications

Year:

2015

Language:

english

File:

PDF, 1.48 MB

english, 2015

100

Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

Kurai, Satoshi, Ushijima, Fumitaka, Miyake, Hideto, Hiramatsu, Kazumasa, Yamada, Yoichi

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.64 MB

english, 2014

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