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1

[IEEE 2019 15th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) - Lausanne, Switzerland (2019.7.15-2019.7.18)] 2019 15th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) - Implementation of a Fully-Differential Operational Amplifier with Wide-Input Range, High-Impedance Common-Mode Feedback

Wenger, Y., Meinerzhagen, B.

Year:

2019

Language:

english

File:

PDF, 959 KB

english, 2019

2

Hydrodynamic equations for semiconductors with nonparabolic band structure

Thoma, R., Emunds, A., Meinerzhagen, B., Peifer, H.-J., Engl, W.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 1.11 MB

english, 1991

3

[IEEE 2012 IEEE Asian Solid State Circuits Conference (A-SSCC) - Kobe, Japan (2012.11.12-2012.11.14)] 2012 IEEE Asian Solid State Circuits Conference (A-SSCC) - A successive cancellation decoder ASIC for a 1024-bit polar code in 180nm CMOS

Mishra, A., Raymond, A. J., Amaru, L. G., Sarkis, G., Leroux, C., Meinerzhagen, P., Burg, A., Gross, W. J.

Year:

2012

Language:

english

File:

PDF, 271 KB

english, 2012

4

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Detailed physical simulation of program disturb mechanisms in Sub-50 nm NAND flash memory strings

Nguyen, C. D., Kuligk, A., Vexler, M. I., Klawitter, M., Beyer, V., Melde, T., Czernohorsky, M., Meinerzhagen, B.

Year:

2010

Language:

english

File:

PDF, 620 KB

english, 2010

5

Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling

Meinerzhagen, Pascal, Teman, Adam, Giterman, Robert, Burg, Andreas, Fish, Alexander

Journal:

Journal of Low Power Electronics and Applications

Year:

2013

Language:

english

File:

PDF, 3.55 MB

english, 2013

6

An Energy-Efficient Graphics Processor in 14-nm Tri-Gate CMOS Featuring Integrated Voltage Regulators for Fine-Grain DVFS, Retentive Sleep, and VMIN Optimization

Meinerzhagen, Pascal A., Tokunaga, Carlos, Malavasi, Andres, Vaidya, Vaibhav, Mendon, Ashwin, Mathaikutty, D., Kulkarni, Jaydeep, Augustine, Charles, Cho, Minki, Kim, Stephen T., Matthew, George E., J

Journal:

IEEE Journal of Solid-State Circuits

Year:

2018

Language:

english

File:

PDF, 9.16 MB

english, 2018

7

A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

A.T. Pham, C. Jungemann, C.D. Nguyen, B. Meinerzhagen

Journal:

Materials Science and Engineering: B

Year:

2006

Language:

english

File:

PDF, 781 KB

english, 2006

8

TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1−xGexDual Channel pMOSFETs on (001) Relaxed Si1−yGey

C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen

Journal:

Journal of Computational Electronics

Year:

2004

Language:

english

File:

PDF, 244 KB

english, 2004

9

Numerical modeling of RF noise in scaled MOS devices

C. Jungemann, B. Neinhüs, C.D. Nguyen, A.J. Scholten, L.F. Tiemeijer, B. Meinerzhagen

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 419 KB

english, 2006

10

Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates

A.T. Pham, C. Jungemann, B. Meinerzhagen

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 429 KB

english, 2008

11

Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs: C–V characteristics, mobility, and ON current

Anh-Tuan Pham, Qing-Tai Zhao, Christoph Jungemann, Bernd Meinerzhagen, Siegfried Mantl, Bart Soree, Geoffrey Pourtois

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 725 KB

english, 2011

12

Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

Anh-Tuan Pham, Bart Sorée, Wim Magnus, Christoph Jungemann, Bernd Meinerzhagen, Geoffrey Pourtois

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1.40 MB

english, 2012

13

Investigation of compact models for RF noise in SiGe HBTs by hydrodynamic device simulation

Jungemann, C., Neinhus, B., Meinerzhagen, B., Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 276 KB

english, 2004

14

[Computational Microelectronics] Hierarchical Device Simulation || The Monte-Carlo Method

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 1.96 MB

english, 2003

15

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - TCAD ready density gradient calculation of channel charge for Si/strained Si/sub 1-x/Ge/sub x/ dual channel pMOSFETs on [001] relaxed Si/sub 1-y/Ge/sub y/

Nguyen,, Pham,, Jungemann,, Meinerzhagen,

Year:

2004

Language:

english

File:

PDF, 121 KB

english, 2004

16

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - A non-parabolic six moments model for the simulation of sub-100 nm devices

Grasser,, Kosik,, Jungemann,, Kosina,, Meinerzhagen,, Selberherr,

Year:

2004

Language:

english

File:

PDF, 116 KB

english, 2004

17

[IEEE 2013 IEEE Custom Integrated Circuits Conference - CICC 2013 - San Jose, CA, USA (2013.09.22-2013.09.25)] Proceedings of the IEEE 2013 Custom Integrated Circuits Conference - FireBird: PowerPC e200 based SoC for high temperature operation

Cojbasic, Radisav, Cogal, Omer, Meinerzhagen, Pascal, Senning, Christian, Slater, Conor, Maeder, Thomas, Burg, Andreas, Leblebici, Yusuf

Year:

2013

Language:

english

File:

PDF, 3.03 MB

english, 2013

18

[IEEE 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Melbourne VIC, Australia (2014.6.1-2014.6.5)] 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - 4T Gain-Cell with internal-feedback for ultra-low retention power at scaled CMOS nodes

Giterman, Robert, Teman, Adam, Meinerzhagen, Pascal, Burg, Andreas, Fish, Alexander

Year:

2014

Language:

english

File:

PDF, 1.44 MB

english, 2014

19

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - A Legendre polynomial solver for the Langevin Boltzmann equation

Jungemann,, Meinerzhagen,

Year:

2004

Language:

english

File:

PDF, 101 KB

english, 2004

20

[IEEE 2012 IEEE Subthreshold Microelectronics Conference (SubVT) - Waltham, MA, USA (2012.10.9-2012.10.10)] 2012 IEEE Subthreshold Microelectronics Conference (SubVT) - A sub-VT 2T gain-cell memory for biomedical applications

Meinerzhagen, Pascal, Teman, Adam, Mordakhay, Anatoli, Burg, Andreas, Fish, Alexander

Year:

2012

Language:

english

File:

PDF, 1.37 MB

english, 2012

21

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Hydrodynamic modeling of RF noise in CMOS devices

Jungemann, C., Neinhus, B., Nguyen, C.D., Meinerzhagen, B., Dutton, R.W., Scholten, A.J., Tiemeijer, L.F.

Year:

2003

Language:

english

File:

PDF, 229 KB

english, 2003

22

[IEEE 2012 IEEE International Symposium on Circuits and Systems - ISCAS 2012 - Seoul, Korea (South) (2012.05.20-2012.05.23)] 2012 IEEE International Symposium on Circuits and Systems - Two-port low-power gain-cell storage array: Voltage scaling and retention time

Iqbal, Rashid, Meinerzhagen, Pascal, Burg, Andreas

Year:

2012

Language:

english

File:

PDF, 1023 KB

english, 2012

23

[IEEE 2015 IEEE International Symposium on Circuits and Systems (ISCAS) - Lisbon, Portugal (2015.5.24-2015.5.27)] 2015 IEEE International Symposium on Circuits and Systems (ISCAS) - Refresh-free dynamic standard-cell based memories: Application to a QC-LDPC decoder

Meinerzhagen, Pascal, Bonetti, Andrea, Karakonstantis, Georgios, Roth, Christoph, Giirkaynak, Frank, Burg, Andreas

Year:

2015

Language:

english

File:

PDF, 1.15 MB

english, 2015

24

A Low-Voltage Radiation-Hardened 13T SRAM Bitcell for Ultralow Power Space Applications

Atias, Lior, Teman, Adam, Giterman, Robert, Meinerzhagen, Pascal, Fish, Alexander

Journal:

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Year:

2016

Language:

english

File:

PDF, 5.62 MB

english, 2016

25

[IEEE 2015 10th European Microwave Integrated Circuits Conference (EuMIC) - Paris, France (2015.9.7-2015.9.8)] 2015 10th European Microwave Integrated Circuits Conference (EuMIC) - A K-band high gain, low noise figure LNA using 0.13 μm logic CMOS technology

Dang, J., Sakalas, P., Noculak, A., Hinz, M., Meinerzhagen, B.

Year:

2015

Language:

english

File:

PDF, 466 KB

english, 2015

26

[IEEE 2016 IEEE International Symposium on Circuits and Systems (ISCAS) - Montréal, QC, Canada (2016.5.22-2016.5.25)] 2016 IEEE International Symposium on Circuits and Systems (ISCAS) - A process compensated gain cell embedded-DRAM for ultra-low-power variation-aware design

Giterman, Robert, Teman, Adam, Meinerzhagen, Pascal, Fish, Alexander, Burg, Andreas

Year:

2016

File:

PDF, 898 KB

2016

27

[IEEE Conference Publications Design, Automation and Test in Europe - Grenoble, France (2015.03.9-2015.03.13)] Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015 - Energy versus Data Integrity Trade-Offs in Embedded High-Density Logic Compatible Dynamic Memories

Teman, Adam, Karakonstantis, Georgios, Giterman, Robert, Meinerzhagen, Pascal, Burg, Andreas

Year:

2015

Language:

english

File:

PDF, 300 KB

english, 2015

28

Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip || Aggressive Technology and Voltage Scaling (Down to the Subthreshold Domain)

Meinerzhagen, Pascal, Teman, Adam, Giterman, Robert, Edri, Noa, Burg, Andreas, Fish, Alexander

Year:

2018

Language:

english

File:

PDF, 974 KB

english, 2018

29

[IEEE 2017 IEEE International Symposium on Circuits and Systems (ISCAS) - Baltimore, MD, USA (2017.5.28-2017.5.31)] 2017 IEEE International Symposium on Circuits and Systems (ISCAS) - Design methodology for area and energy efficient OxRAM-based non-volatile flip-flop

Nataraj, M., Levisse, A., Giraud, B., Noel, J.-P., Meinerzhagen, P., Portal, J.M., Gaillardon, P.-E.

Year:

2017

Language:

english

File:

PDF, 1.75 MB

english, 2017

30

[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - An ultra-dense irradiation test structure with a NAND/NOR readout chain for characterizing soft error rates of 14nm combinational logic circuits

Kumar, Saurabh, Cho, Minki, Everson, Luke, Kim, Hoonki, Tang, Qianying, Mazanec, Paul, Meinerzhagen, Pascal, Malavasi, Andres, Lake, Dan, Tokunaga, Carlos, Khellah, Muhammad, Tschanz, James, Borkar, S

Year:

2017

Language:

english

File:

PDF, 376 KB

english, 2017

31

Low-Voltage Current and Voltage Reference Design Based on the MOSFET ZTC Effect

Wenger, Yannick, Meinerzhagen, Bernd

Journal:

IEEE Transactions on Circuits and Systems I: Regular Papers

Year:

2019

File:

PDF, 48 KB

2019

32

An All-Digital, VMAX-Compliant, Stable, and Scalable Distributed Charge Injection Scheme in 10-nm CMOS for Fast and Local Mitigation of Voltage Droop

Bang, Suyoung, Cho, Minki, Meinerzhagen, Pascal A., Malavasi, Andres, Khellah, Muhammad M., Tschanz, James W., De, Vivek

Journal:

IEEE Journal of Solid-State Circuits

Year:

2020

File:

PDF, 8.19 MB

2020

33

Hydrodynamic simulation of hysteresis phenomena in SOI MOSFET characteristics

I. Bork, B. Meinerzhagen, W.L. Engl

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 208 KB

english, 1992

34

Numerical simulation of strained Si/SiGe devices: the hierarchical approach

B. Meinerzhagen, C. Jungemann, B. Neinhüs, M. Bartels

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 272 KB

english, 2004

35

Evaluation of compact noise modeling for Si/SiGe HBTs based on hierarchical hydrodynamic noise simulation

M. Bartels, B. Neinhüs, C. Jungemann, B. Meinerzhagen

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 121 KB

english, 2004

36

Study of charge carrier quantization in strained Si-nMOSFETs

C.D. Nguyen, A.T. Pham, C. Jungemann, B. Meinerzhagen

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 267 KB

english, 2005

37

Band-to-band tunneling related effects in a thin MOS structure

M.I Vexler, A.F Shulekin, D Grgec, I.V Grekhov, B Meinerzhagen

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 211 KB

english, 2004

38

High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs

T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersboeck, S. Selberherr, A.-T. Pham, B. Meinerzhagen, P. Wong, Y. Nishi, K.C. Saraswat

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 890 KB

english, 2007

39

Tunnel charge transport within silicon in reversely-biased MOS tunnel structures

M.I. Vexler, A. El Hdiy, D. Grgec, S.E. Tyaginov, R. Khlil, B. Meinerzhagen, A.F. Shulekin, I.V. Grekhov

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 300 KB

english, 2006

40

Investigation of strained Si/SiGe devices by MC simulation

C. Jungemann, N. Subba, J.-S. Goo, C. Riccobene, Q. Xiang, B. Meinerzhagen

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 433 KB

english, 2004

41

A semiempirical surface scattering model for quantum corrected full-band Monte-Carlo simulation of biaxially strained Si/SiGe NMOSFETs

A.T. Pham, C.D. Nguyen, C. Jungemann, B. Meinerzhagen

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 168 KB

english, 2006

42

Simulation of hole and electron tunnel currents in MIS devices adopting the symmetric Franz-type dispersion relation for the charged carriers in thin insulators

M.I. Vexler, A. Kuligk, B. Meinerzhagen

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 612 KB

english, 2009

43

Modeling and validation of piezoresistive coefficients in Si hole inversion layers

A.T. Pham, C. Jungemann, B. Meinerzhagen

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 696 KB

english, 2009

44

IS PHYSICALLY SOUND AND PREDICTIVE MODELING OF NMOS SUBSTRATE CURRENTS POSSIBLE?

C. Jungemann, B. Meinerzhagen, S. Decker, S. Keith, S. Yamaguchi, H. Goto

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 385 KB

english, 1998

45

Compact quantum model for a silicon MOS tunnel diode

M.I. Vexler, N. Asli, A.F. Shulekin, B. Meinerzhagen, P. Seegebrecht

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 180 KB

english, 2001

46

A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices

Tibor Grasser, Robert Kosik, Christoph Jungemann, Bernd Meinerzhagen, Hans Kosina, Siegfried Selberherr

Journal:

Journal of Computational Electronics

Year:

2004

Language:

english

File:

PDF, 189 KB

english, 2004

47

A Legendre Polynomial Solver for the Langevin Boltzmann Equation

Christoph Jungemann, Bernd Meinerzhagen

Journal:

Journal of Computational Electronics

Year:

2004

Language:

english

File:

PDF, 204 KB

english, 2004

48

A fast(vec{k}cdotvec{p})solver for hole inversion layers with an efficient 2D

Anh-Tuan Pham, Bernd Meinerzhagen, Christoph Jungemann

Journal:

Journal of Computational Electronics

Year:

2008

Language:

english

File:

PDF, 537 KB

english, 2008

49

On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

Anh-Tuan Pham, Christoph Jungemann, Bernd Meinerzhagen

Journal:

Journal of Computational Electronics

Year:

2009

Language:

english

File:

PDF, 1.74 MB

english, 2009

50

Do hot electrons cause excess noise?

C. Jungemann, B. Meinerzhagen

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 252 KB

english, 2006