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51

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - 5.5 kV normally-off low RonS 4H-SiC SEJFET

Asano, K., Sugawara, Y., Ryu, S., Singh, R., Palmour, J., Hayashi, T., Takayama, D.

Year:

2001

Language:

english

File:

PDF, 381 KB

english, 2001

52

1/f noise in forward biased high voltage 4H-SiC Schottky diodes

Shabunina, Eugenia I., Levinshtein, Michael E., Shmidt, Natalia M., Ivanov, Pavel A., Palmour, John W.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 605 KB

english, 2014

53

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - High temperature characteristics of 5 kV, 20 A 4H-SiC PiN rectifiers

Singh, R., Hefner, A.R., Berning, D., Palmour, J.W.

Year:

2001

Language:

english

File:

PDF, 386 KB

english, 2001

54

Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide

Davis, Robert F., Palmour, J.W., Edmond, J.A.

Journal:

Diamond and Related Materials

Year:

1992

Language:

english

File:

PDF, 2.82 MB

english, 1992

55

SiC device technology: remaining issues

Palmour, J.W., Lipkin, L.A., Singh, R., Slater, D.B., Suvorov, A.V., Carter, C.H.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 787 KB

english, 1997

56

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - Large area 4H-SiC power MOSFETs

Agarwal, A., Sei-Hyung Ryu,, Das, M., Lipkin, L., Palmour, J., Saks, N.

Year:

2001

Language:

english

File:

PDF, 467 KB

english, 2001

57

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

Ryu, Sei-Hyung, Capell, Craig, Jonas, Charlotte, Cheng, Lin, O'Loughlin, Michael, Burk, Al, Agarwal, Anant, Palmour, John, Hefner, Allen

Year:

2012

Language:

english

File:

PDF, 850 KB

english, 2012

58

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - 2 kV 4H-SiC DMOSFETs for low loss, high frequency switching applications

Sei-Hyung Ryu,, Krishnaswami, S., Das, M., Richmond, J., Agarwal, A., Palmour, J., Scofield, J.

Year:

2004

Language:

english

File:

PDF, 754 KB

english, 2004

59

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

Rumyantsev, S L, Shur, M S, Levinshtein, M E, Ivanov, P A, Palmour, J W, Agarwal, A K, Hull, B A, Ryu, Sei-Hyung

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 308 KB

english, 2009

60

[IEEE 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010 - Anaheim, CA, USA (2010.05.23-2010.05.28)] 2010 IEEE MTT-S International Microwave Symposium - 100 mm GaN-on-SiC RF MMIC technology

Palmour, J. W., Hallin, C., Burk, A., Radulescu, F., Namishia, D., Hagleitner, H., Duc, J., Pribble, B., Sheppard, S. T., Barner, J. B., Milligan, J.

Year:

2010

Language:

english

File:

PDF, 93 KB

english, 2010

61

10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

Sei-hyung Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks, J. Williams

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 239 KB

english, 2002

62

[IEEE Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - Notre Dame, IN, USA (June 21-23, 2004)] Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - 10 kV, 123 mΩ-cm/sup 2/4H-SiC power DMOSFETs

Sei-Hyung Ryu,, Krishnaswami, S., O'Loughlin, M., Richmond, J., Agarwal, A., Palmour, J., Hefner, A.R.

Year:

2004

Language:

english

File:

PDF, 129 KB

english, 2004

63

[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Design and Fabrications of High Voltage IGBTs on 4H-SiC

Qingchun Zhang,, Jonas, C., Sei-Hyung Ryu,, Agarwal, A., Palmour, J.

Year:

2006

Language:

english

File:

PDF, 3.64 MB

english, 2006

64

[IEEE 56th Annual Device Research Conference Digest - Charlottesville, VA, USA (22-24 June 1998)] 56th Annual Device Research Conference Digest (Cat. No.98TH8373) - 4H-SiC bipolar P-i-N diodes with 5.5 kV blocking voltage

Singh, R., Irvine, K.G., Kordina, O., Palmour, J.W., Levinshtein, M.E., Rumyanestev, S.L.

Year:

1998

File:

PDF, 290 KB

1998

65

[IEEE 58th DRC. Device Research Conference - Denver, CO, USA (19-21 June 2000)] 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) - 1800 V, 3.8 A bipolar junction transistors in 4H-SiC

Sei-Hyung Ryu,, Agarwal, A.K., Singh, R., Palmour, J.W.

Year:

2000

Language:

english

File:

PDF, 199 KB

english, 2000

66

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - High Speed Switching Devices in 4H-SiC - Performance and Reliability

Sei-Hyung Ryu,, Krishnaswami, S., Hull, B., Heath, B., Das, M., Richmond, J., Fatima, H., Jon Zhang,, Agarwal, A., Palmour, J., Lelis, A., Geil, B., Katsis, D., Scozzie, C., Scofield, J.

Year:

2005

Language:

english

File:

PDF, 186 KB

english, 2005

67

[IEEE 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings - Toulouse, France (22-25 May 2000)] 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) - 1500 V, 4 amp 4H-SiC JBS diodes

Singh, R., Ryu, S., Palmour, J.W., Hefner, A.R., Lai, J.

Year:

2000

Language:

english

File:

PDF, 411 KB

english, 2000

68

[IEEE 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings - Toulouse, France (22-25 May 2000)] 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) - 4.5 kV novel high voltage high performance SiC-FET "SIAFET"

Sugawara, Y., Asano, M., Singh, R., Palmour, J., Takayama, D.

Year:

2000

Language:

english

File:

PDF, 334 KB

english, 2000

69

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - 5 kV 4H-SiC SEJFET with low RonS of 69mΩcm/sup 2/

Asano, K., Sugawara, Y., Hayashi, T., Ryu, S., Singh, R., Palmour, J., Takayama, D.

Year:

2000

Language:

english

File:

PDF, 298 KB

english, 2000

70

[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - 4.5 kV 120A SICGT and Its PWM Three Phase Inverter Operation of 100kVA class

Sugawara, Y., Miyanagi, Y., Asano, K., Agarwal, A., Ryu, S., Palmour, J., Shoji, Y., Okada, S., Ogata, S., Izumi, T.

Year:

2006

Language:

english

File:

PDF, 3.88 MB

english, 2006

71

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - 1.8 kV, 3.8 A bipolar junction transistors in 4H-SiC

Sei-Hyung Ryu,, Agarwal, A.K., Palmour, J.W., Levinshtein, M.E.

Year:

2001

Language:

english

File:

PDF, 301 KB

english, 2001

72

[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - Silicon carbide for power devices

Palmour, J.W., Singh, R., Glass, R.C., Kordina, O., Carter, C.H.

Year:

1997

Language:

english

File:

PDF, 809 KB

english, 1997

73

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - 27 mΩ-cm/sup 2/, 1.6 kV power DiMOSFETs in 4H-SiC

Sei-Hyung Ryu,, Agarwal, A., Richmond, J., Palmour, J., Saks, N., Williams, J.

Year:

2000

Language:

english

File:

PDF, 334 KB

english, 2000

74

[IEEE 19th International Symposium on Power Semiconductor Devices and Ics - Jeju Island (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C

Oingchun Zhang,, Jonas, C., Callanan, R., Sumakeris, J., Das, M., Agarwal, A., Palmour, J., Sei-Hyung Ryu,, Jun Wang,, Alex Huang,

Year:

2007

Language:

english

File:

PDF, 1.65 MB

english, 2007

75

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

Brunt, E. V., Cheng, L., O'Loughlin, M., Capell, C., Jonas, C., Lam, K., Richmond, J., Pala, V., Ryu, S., Allen, S. T., Burk, A. A., Palmour, J. W., Scozzie, C.

Year:

2014

Language:

english

File:

PDF, 950 KB

english, 2014

76

Development of 10 kV 4H-SiC Power DMOSFETs

Ryu, Sei Hyung, Agarwal, Anant, Krishnaswami, Sumi, Richmond, James, Palmour, John W.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 217 KB

english, 2004

77

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - 3300 V, 30 A 4H-SiC power DMOSFETs

Lin Cheng,, Sei-Hyung Ryu,, Jonas, C., Dhar, S., Callanan, R., Richmond, J., Agarwal, A.K., Palmour, J.

Year:

2009

Language:

english

File:

PDF, 170 KB

english, 2009

78

Abdominal ultrasonography of the normal St. Kitts vervet monkey ( Chlorocebus sabaeus )

Amory, J.T., Du Plessis, W.M., Beierschmitt, A., Beeler-Marfisi, J., Palmour, R.M., Beths, T.

Journal:

Journal of Medical Primatology

Year:

2013

File:

PDF, 35 KB

2013

79

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Lichtenwalner, Daniel J., Cheng, Lin, Dhar, Sarit, Agarwal, Anant, Palmour, John W.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 793 KB

english, 2014

80

Dry etching of β-SiC in CF4 and CF4+O2 mixtures

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

1986

Language:

english

File:

PDF, 716 KB

english, 1986

81

[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - 3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

Ryu, Sei-Hyung, Cheng, Lin, Dhar, Sarit, Capell, Craig, Jonas, Charlotte, Callanan, Robert, Agarwal, Anant, Palmour, John, Lelis, Aivars, Scozzie, Charles, Geil, Bruce

Year:

2011

Language:

english

File:

PDF, 622 KB

english, 2011

82

[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - 4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield

Zhang, Qingchun, Burk, Al, Husna, Fatima, Callanan, Robert, Agarwal, Anant, Palmour, John, Stahlbush, Robert, Scozzie, Charles

Year:

2009

Language:

english

File:

PDF, 315 KB

english, 2009

83

1000-V, 30-A 4H-SiC BJTs with high current gain

Krishnaswami, S., Agarwal, A., Sei-Hyung Ryu,, Capell, C., Richmond, J., Palmour, J., Balachandran, S., Chow, T.P., Bayne, S., Geil, B., Jones, K., Scozzie, C.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 239 KB

english, 2005

84

[IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - Ultra high voltage IGBTs in 4H-SiC

Ryu, S., Capell, C., Jonas, C., Lemma, Y., O'Loughlin, M., Clayton, J., Van Brunt, E., Lam, K., Richmond, J., Burk, A., Grider, D., Allen, S., Palmour, J., Agarwal, A., Kadavelugu, A., Bhattacharya, S

Year:

2013

Language:

english

File:

PDF, 381 KB

english, 2013

85

[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC

Agarwal, A.K., Sei-Hyung Ryu,, Richmond, J., Capell, C., Palmour, J.W., Yi Tang,, Balachandran, S., Chow, T.P.

Year:

2003

Language:

english

File:

PDF, 246 KB

english, 2003

86

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Ruggedness evaluation of 56mm2, 180 A SiC DMOSFETs as a function of pulse repetition rate for high power applications

Lawson, K., Schrock, J., Ray, W., Bayne, S., Cheng, L., Palmour, J., Allen, S., Scozzie, C.

Year:

2014

Language:

english

File:

PDF, 1.10 MB

english, 2014

87

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

Schrock, James A., Ray II, William B., Lawson, Kevin, Bilbao, Argenis, Bayne, Stephen B., Holt, Shad L., Cheng, Lin, Palmour, John W., Scozzie, Charles

Journal:

IEEE Transactions on Power Electronics

Year:

2015

Language:

english

File:

PDF, 588 KB

english, 2015

88

High hole lifetime (3.8 [micro sign]s) in 4H-SiC diodes with 5.5 kV blocking voltage

Ivanov, P.A., Levinshtein, M.E., Irvine, K.G., Kordina, O., Palmour, J.W., Rumyantsev, S.L., Singh, R.

Journal:

Electronics Letters

Year:

1999

Language:

english

File:

PDF, 215 KB

english, 1999

89

Differential Effects of Nicotine Treatment and Ethanol Self-Administration on CYP2A6, CYP2B6 and Nicotine Pharmacokinetics in African Green Monkeys

Ferguson, C. S., Miksys, S., Palmour, R. M., Tyndale, R. F.

Journal:

Journal of Pharmacology and Experimental Therapeutics

Year:

2012

Language:

english

File:

PDF, 616 KB

english, 2012

90

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer

Ryu, Sei Hyung, Jonas, Charlotte, Capell, Craig, Lemma, Yemane, Agarwal, Anant, McNutt, Ty, Grider, Dave, Allen, Scott T., Palmour, John W.

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 578 KB

english, 2014

91

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

Zhang, Jon, Jonas, Charlotte, Sumakeris, Joseph J., Agarwal, Anant, Palmour, John W.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 328 KB

english, 2009

92

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Zhang, Qing Chun, Callanan, Robert, Agarwal, Anant, Burk, Albert A., O'Loughlin, Michael J., Palmour, John, Scozzie, Charles

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 745 KB

english, 2010

93

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

Zhang, Qing Chun, Agarwal, Anant, Burk, Albert A., O'Loughlin, Michael J., Palmour, John, Stahlbush, Robert E., Scozzie, Charles

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 1.06 MB

english, 2010

94

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Ryu, Sei Hyung, Hull, Brett A., Dhar, Sarit, Cheng, L., Zhang, Qing Chun, Richmond, Jim, Das, Mrinal K., Agarwal, Anant, Palmour, John, Lelis, Aivars J., Geil, Bruce, Scozzie, Charles

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 771 KB

english, 2010

95

2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

Agarwal, Anant, Ryu, Sei Hyung, Singh, Ranbir, Kordina, Olle, Palmour, John W.

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 343 KB

2000

96

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Zhang, Jon, Jonas, Charlotte, Burk, Al A., Capell, Craig, Young, Jonathan, Callanan, Robert, Agarwal, Anant, Palmour, John W., Geil, Bruce, Scozzie, Charles J.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 405 KB

english, 2009

97

Simulations of 10 kV Trench Gate IGBTs on 4H-SiC

Zhang, Qing Chun, Ryu, Sei Hyung, Jonas, Charlotte, Agarwal, Anant, Palmour, John W.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 295 KB

english, 2006

98

High Temperature, High Current, 4H-SiC Accu-DMOSFET

Singh, Ranbir, Ryu, Sei Hyung, Palmour, John W.

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 367 KB

2000

99

Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

Ryu, Sei Hyung, Krishnaswami, Sumi, Hull, Brett A., Heath, Bradley, Das, Mrinal K., Richmond, James, Agarwal, Anant, Palmour, John W., Scofield, James D.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 264 KB

english, 2006

100

Fabrication and Characterization of 5 kV IGBTs on 4H-SiC

Jonas, Charlotte Elizabeth, Zhang, Qingchun, Ryu, Sei-Hyung, Agarwal, Anant, Palmour, John

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 194 KB

english, 2006

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